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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA20N50E-E3

Name: SIHA20N50E-E3
Brand: Vishay Siliconix
SKU: SIHA20N50E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA20N50E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA20N50E-E3.pdf

Description:: MOSFET N-CH 500V 19A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA20N50E-E3 from Vishay Siliconix is a 500 V, 19 A N-channel enhancement-mode power MOSFET in a Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.184 Ω at V_GS = 10 V, Q_g = 92 nC, and avalanche-rated (E_AS = 204 mJ). It delivers low conduction and switching losses for hard-switched PFC and flyback converters in ATX power supplies and LED lighting.

For engineers reviewing the SIHA20N50E-E3 datasheet, SIHA20N50E-E3 pinout, SIHA20N50E-E3 application, or SIHA20N50E-E3 equivalent, key selection criteria include its 500 V V_DS, 0.184 Ω R_DS(on), 92 nC gate charge, 204 mJ unclamped inductive energy rating, and thermal resistance of 3.7 °C/W (junction-to-case), critical for high-efficiency SMPS thermal design.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage switching with low gate charge and reduced output capacitance (C_oss = 87 pF). Its 500 V breakdown voltage and 150 °C maximum junction temperature support operation in continuous conduction mode PFC stages where voltage overshoot and thermal stress are significant.

The device integrates a fast-recovery body diode (t_rr = 293 ns, Q_rr = 4.0 μC) and is rated for dV/dt up to 70 V/ns, enabling robust performance in two-switch forward and flyback topologies without external snubbers under typical operating conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for transient overvoltage in PFC and SMPS
R_DS(on) max @ 10 V	0.184 Ω - enables ≤ 35 W conduction loss at 19 A continuous drain current (T_C = 25 °C)
Q_g max	92 nC - determines gate drive power requirement and switching speed in 100–500 kHz hard-switched applications
E_AS	204 mJ - ensures reliable operation during unclamped inductive switching events without failure
C_oss	87 pF - reduces capacitive turn-off losses and improves efficiency in high-frequency flyback converters
R_thJC	3.7 °C/W - allows direct heatsink mounting to sustain 34 W power dissipation at T_C = 25 °C
t_rr	293 ns - minimizes reverse recovery loss and EMI in discontinuous conduction mode (DCM) operation

Pinout & Package

SIHA20N50E-E3 is housed in a Thin-Lead TO-220 FULLPAK package (JEDEC TO-220AB variant with reduced lead thickness), offering improved thermal performance vs. standard TO-220 due to direct die-to-tab construction and enhanced copper tab thermal path.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side power terminal	Connected to heat sink; carries full load current and withstands 500 V potential; electrically tied to metal tab
S (Source)	Power return and reference node	Provides low-impedance return path for load current; serves as gate drive reference; bonded to source metallization
G (Gate)	Control input	High-impedance MOS control terminal requiring <100 nA leakage current; drives channel formation with 10 V threshold range (2.0–4.0 V)

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	16.9 Ω·nC - balances conduction and switching losses for optimal efficiency in 65–300 kHz SMPS
Avalanche energy rating	204 mJ single-pulse - eliminates need for external clamping in inductive load switching circuits
Fast body diode recovery	t_rr = 293 ns, Q_rr = 4.0 μC - reduces cross-conduction loss and EMI in synchronous rectification and flyback freewheeling
Low C_iss	1640 pF - eases gate driver selection and improves noise immunity in high dv/dt environments
High dV/dt immunity	70 V/ns - prevents false turn-on during fast voltage transients in high-side switch configurations

Applications

PC Silver Box / ATX Power Supply	Two-Stage LED Lighting
Use Scenario: Primary-side switching in active PFC stage and main power switch in LLC resonant half-bridge. IC Role / Device Role / Timing Role: High-voltage N-channel power switch handling 380–400 V DC bus with 19 A peak current. Use Value: 0.184 Ω R_DS(on) and 92 nC Q_g enable >95 % PFC efficiency at 230 V AC input while maintaining thermal margin on standard heatsinks.	Use Scenario: Primary-side switch in isolated flyback LED drivers delivering 100–200 W constant power to high-brightness arrays. IC Role / Device Role / Timing Role: Hard-switched 500 V MOSFET operating at 65–130 kHz with unclamped inductive turn-off. Use Value: 204 mJ E_AS rating ensures reliability across line-voltage surges and output short-circuit events without snubber redesign.
Two-Switch Forward Converter	Hard-Switched SMPS
Use Scenario: Main switching element in telecom and server DC/DC front-end converters using two-switch forward topology with 48 V or 54 V input. IC Role / Device Role / Timing Role: High-side switch clamped by auxiliary winding; operates with zero-voltage switching assist. Use Value: Low C_oss (87 pF) and fast t_rr (293 ns) reduce dead-time losses and improve light-load efficiency in 200–500 kHz operation.	Use Scenario: Main switch in industrial AC/DC adapters and embedded power modules requiring long-term reliability at elevated ambient temperatures. IC Role / Device Role / Timing Role: General-purpose 500 V N-channel MOSFET used in flyback, boost, and buck-derived topologies. Use Value: -55 to +150 °C operating range and 3.7 °C/W R_thJC support continuous operation in sealed enclosures up to 85 °C ambient.

PC Silver Box / ATX Power Supply

Two-Stage LED Lighting

Use Scenario: Primary-side switching in active PFC stage and main power switch in LLC resonant half-bridge.

IC Role / Device Role / Timing Role: High-voltage N-channel power switch handling 380–400 V DC bus with 19 A peak current.

Use Value: 0.184 Ω R_DS(on) and 92 nC Q_g enable >95 % PFC efficiency at 230 V AC input while maintaining thermal margin on standard heatsinks.

Use Scenario: Primary-side switch in isolated flyback LED drivers delivering 100–200 W constant power to high-brightness arrays.

IC Role / Device Role / Timing Role: Hard-switched 500 V MOSFET operating at 65–130 kHz with unclamped inductive turn-off.

Use Value: 204 mJ E_AS rating ensures reliability across line-voltage surges and output short-circuit events without snubber redesign.

Two-Switch Forward Converter

Hard-Switched SMPS

Use Scenario: Main switching element in telecom and server DC/DC front-end converters using two-switch forward topology with 48 V or 54 V input.

IC Role / Device Role / Timing Role: High-side switch clamped by auxiliary winding; operates with zero-voltage switching assist.

Use Value: Low C_oss (87 pF) and fast t_rr (293 ns) reduce dead-time losses and improve light-load efficiency in 200–500 kHz operation.

Use Scenario: Main switch in industrial AC/DC adapters and embedded power modules requiring long-term reliability at elevated ambient temperatures.

IC Role / Device Role / Timing Role: General-purpose 500 V N-channel MOSFET used in flyback, boost, and buck-derived topologies.

Use Value: -55 to +150 °C operating range and 3.7 °C/W R_thJC support continuous operation in sealed enclosures up to 85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50	R_DS(on) = 0.22 Ω (higher), Q_g = 72 nC (lower), no specified E_AS rating	Lacks avalanche energy specification; requires external clamping in inductive loads	Prefer SIHA20N50E-E3 where unclamped inductive stress is present; STP20NM50 may suit lower-stress flyback with snubber
IRFP460LC	R_DS(on) = 0.27 Ω, Q_g = 140 nC, E_AS = 310 mJ, TO-247 package	Larger footprint, higher gate drive demand, but superior avalanche ruggedness	Choose IRFP460LC for ultra-rugged 500 V applications needing >300 mJ E_AS; SIHA20N50E-E3 offers better R_DS(on)/Q_g tradeoff in space-constrained TO-220 designs

Compared with STP20NM50 and IRFP460LC, SIHA20N50E-E3 provides the best balance of low R_DS(on), moderate Q_g, and certified avalanche capability in a compact TO-220 FULLPAK package-ideal for cost-sensitive, thermally constrained 500 V SMPS where layout area and heatsink mass are limited.

Availability

SIHA20N50E-E3 is available at Aetrix Electronics and suitable for PC silver box / ATX power supplies, two-stage LED lighting, and hard-switched SMPS requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for SIHA20N50E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIHA20N50E-E3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-voltage, high-efficiency switch-mode power conversion in computing, lighting, and consumer electronics applications.

FAQ

What is the maximum continuous drain current rating for SIHA20N50E-E3 at 100 °C case temperature?

The SIHA20N50E-E3 has a continuous drain current rating of 12 A at T_C = 100 °C, derated linearly from 19 A at 25 °C using a 1.4 W/°C thermal derating factor. This value reflects safe operation under sustained thermal load with proper heatsinking, and is confirmed in the Absolute Maximum Ratings table of the Vishay datasheet S17-1307-Rev. D.

Does SIHA20N50E-E3 have a fully rated avalanche capability, and what is its test condition?

Yes, SIHA20N50E-E3 is fully avalanche energy rated with E_AS = 204 mJ per pulse. The test condition is defined as V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.8 A, per note b in the Vishay datasheet S17-1307-Rev. D. This rating validates robustness against inductive switching stress in real-world PFC and flyback circuits.

What is the gate-source threshold voltage range for SIHA20N50E-E3, and how does it affect drive requirements?

The gate-source threshold voltage (V_GS(th)) for SIHA20N50E-E3 is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range confirms compatibility with standard 10 V gate drivers and ensures reliable turn-on above 4.5 V, avoiding partial enhancement and associated conduction loss spikes. The SIHA20N50E-E3 is not a logic-level device and requires ≥10 V for full R_DS(on) specification compliance.

How does the body diode performance of SIHA20N50E-E3 compare to standard MOSFETs in flyback applications?

The SIHA20N50E-E3 features a fast-recovery body diode with t_rr = 293 ns and Q_rr = 4.0 μC at T_J = 25 °C, significantly faster than typical general-purpose 500 V MOSFETs (often >500 ns). In flyback applications, this reduces reverse recovery loss, lowers EMI generation, and improves efficiency-especially in DCM operation where the body diode conducts during each switching cycle.

Is SIHA20N50E-E3 RoHS-compliant and halogen-free?

SIHA20N50E-E3 is lead (Pb)-free and RoHS-compliant per Vishay's material categorization policy (doc?99912), but it is not halogen-free. The halogen-free version is designated SIHA20N50E-GE3. Both variants share identical electrical and thermal specifications; only the plating composition differs. SIHA20N50E-E3 meets JEDEC J-STD-609A Class 1 marking requirements for Pb-free finishes.

SIHA20N50E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 184mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 92 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1640 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA20N50E-E3 FAQ

1.How can I place an order for SIHA20N50E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA20N50E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA20N50E-E3 reliable?

The price and inventory of SIHA20N50E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA20N50E-E3 is usually 5 days.

3.What payment methods are accepted for SIHA20N50E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA20N50E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA20N50E-E3?

SIHA20N50E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA20N50E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA20N50E-E3?

For technical support, including SIHA20N50E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA20N50E-E3 requirements.

6.How does Aetrix verify that SIHA20N50E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHA20N50E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA20N50E-E3 meets industry standards.

7.What is the process for return or replacement of SIHA20N50E-E3?

All SIHA20N50E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA20N50E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA20N50E-E3 part is unused and in its original packaging.

Return procedure for SIHA20N50E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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