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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA20N50E-GE3

Name: SIHA20N50E-GE3
Brand: Vishay Siliconix
SKU: SIHA20N50E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA20N50E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA20N50E-GE3.pdf

Description:: N-CHANNEL 500V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA20N50E-GE3 from Vishay Siliconix is a 500 V, 19 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.184 Ω at V_GS = 10 V, Q_g = 92 nC, and avalanche-rated E_AS = 204 mJ - optimized for hard-switched PFC and flyback converters in ATX power supplies and LED lighting.

For engineers reviewing the SIHA20N50E-GE3 datasheet, SIHA20N50E-GE3 pinout, SIHA20N50E-GE3 application, or SIHA20N50E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), high dV/dt immunity (70 V/ns), and body diode recovery performance (t_rr = 293 ns, Q_rr = 4.0 μC) in continuous conduction mode SMPS designs.

Technical Context

This MOSFET employs planar silicon technology with optimized gate oxide and channel doping to achieve stable threshold voltage (V_GS(th) = 2.0–4.0 V) and low temperature coefficient of breakdown voltage (0.59 V/°C). Its dynamic parameters - C_iss = 1640 pF, C_oss = 87 pF, C_rss = 6 pF - support fast switching with minimal Miller effect in high-frequency PFC stages.

The device integrates a robust intrinsic body diode rated for 19 A continuous source-drain current and 42 A pulsed current, with controlled reverse recovery (dI/dt = 100 A/μs, I_RRM = 26 A) to reduce snubbing requirements in two-switch forward topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus operation with 25 % margin for transient overvoltage in universal-input SMPS.
R_DS(on) max @ 10 V	0.184 Ω - enables <1.8 W conduction loss at 10 A, reducing heatsink size in compact ATX silver box designs.
Q_g max	92 nC - determines gate drive power requirement; compatible with standard 1 A peak drivers at ≤300 kHz switching.
E_AS	204 mJ - ensures single-pulse unclamped inductive switching survivability without external clamping in PFC boost stages.
t_rr	293 ns - limits diode reverse recovery losses and EMI generation during hard commutation in flyback primary switches.
R_thJC	3.7 °C/W - allows direct mounting to heatsink with thermal interface material; enables 34 W dissipation at T_C = 100 °C.

Pinout & Package

Thin-Lead TO-220 FULLPAK package: 3-terminal through-hole outline with isolated drain tab (D), source (S), and gate (G) leads; 8.5 mm width, 15.0 mm height, 10.0 mm depth; lead (Pb)-free and halogen-free per JEDEC J-STD-609A.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side power path terminal	Electrically connected to metal tab; must be thermally and electrically tied to heatsink and primary ground plane.
S (Source)	Reference node for gate drive and current sensing	Low-inductance return path for load current; used as common reference for gate driver IC feedback and current-sense resistors.
G (Gate)	Control input for channel modulation	High-impedance MOS control node; requires RC snubber (R_g = 9.1 Ω typical) to damp ringing from C_rss and layout inductance.

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	16.9 Ω·nC - reduces combined switching + conduction loss, enabling >95 % efficiency in 300–500 kHz PFC stages.
Avalanche energy rating (E_AS)	204 mJ - eliminates need for external RCD clamp in boost inductor failure scenarios, improving system reliability.
High dV/dt immunity	70 V/ns - suppresses false turn-on during fast voltage transients in high-side configurations without additional gate clamping.
Body diode Q_rr	4.0 μC - minimizes reverse recovery charge injection into gate driver, reducing cross-conduction risk in synchronous rectification.

Applications

ATX Power Supply PFC Stage	Two-Stage LED Driver
Use Scenario: Boost converter operating in continuous conduction mode (CCM) with 380–400 V DC output from universal AC input. IC Role / Device Role / Timing Role: Primary switch controlling energy transfer from AC line to bulk capacitor; duty cycle modulated at 65–133 kHz. Use Value: Low Q_g and C_iss enable clean zero-voltage switching transition; R_DS(on) < 0.184 Ω maintains <2.5 °C/W thermal rise under full load.	Use Scenario: Secondary-side buck converter regulating constant current for high-brightness LED strings after isolated flyback stage. IC Role / Device Role / Timing Role: Synchronous rectifier replacement for secondary-side Schottky diode; driven by transformer-coupled gate signal. Use Value: Body diode t_rr = 293 ns and Q_rr = 4.0 μC minimize shoot-through risk and reduce gate driver stress versus standard MOSFETs.
Hard-Switched Flyback Converter	Two-Switch Forward Converter
Use Scenario: Isolated offline flyback supplying 12 V/5 A for industrial control logic with no auxiliary winding. IC Role / Device Role / Timing Role: Primary-side main switch handling 500 V blocking and 19 A peak drain current during on-time. Use Value: E_AS = 204 mJ withstands reflected output voltage spikes during transformer leakage inductance discharge without snubber.	Use Scenario: Telecom power module delivering 48 V/10 A using dual active switches sharing voltage stress across input capacitors. IC Role / Device Role / Timing Role: High-side switch in complementary pair; blocks 50 % of input voltage (≈250 V) during off-state. Use Value: V_DS = 500 V rating provides 100 % margin above 250 V blocking requirement; R_thJC = 3.7 °C/W supports forced-air cooling at 12 A RMS.

ATX Power Supply PFC Stage

Two-Stage LED Driver

Use Scenario: Boost converter operating in continuous conduction mode (CCM) with 380–400 V DC output from universal AC input.

IC Role / Device Role / Timing Role: Primary switch controlling energy transfer from AC line to bulk capacitor; duty cycle modulated at 65–133 kHz.

Use Value: Low Q_g and C_iss enable clean zero-voltage switching transition; R_DS(on) < 0.184 Ω maintains <2.5 °C/W thermal rise under full load.

Use Scenario: Secondary-side buck converter regulating constant current for high-brightness LED strings after isolated flyback stage.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement for secondary-side Schottky diode; driven by transformer-coupled gate signal.

Use Value: Body diode t_rr = 293 ns and Q_rr = 4.0 μC minimize shoot-through risk and reduce gate driver stress versus standard MOSFETs.

Hard-Switched Flyback Converter

Two-Switch Forward Converter

Use Scenario: Isolated offline flyback supplying 12 V/5 A for industrial control logic with no auxiliary winding.

IC Role / Device Role / Timing Role: Primary-side main switch handling 500 V blocking and 19 A peak drain current during on-time.

Use Value: E_AS = 204 mJ withstands reflected output voltage spikes during transformer leakage inductance discharge without snubber.

Use Scenario: Telecom power module delivering 48 V/10 A using dual active switches sharing voltage stress across input capacitors.

IC Role / Device Role / Timing Role: High-side switch in complementary pair; blocks 50 % of input voltage (≈250 V) during off-state.

Use Value: V_DS = 500 V rating provides 100 % margin above 250 V blocking requirement; R_thJC = 3.7 °C/W supports forced-air cooling at 12 A RMS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FP	R_DS(on) = 0.22 Ω (higher), Q_g = 72 nC (lower), TO-220FP package with non-isolated drain tab	Limited to lower-power PFC (<300 W); requires insulating pad for heatsink mounting due to non-isolated tab	Prefer when gate drive capability is constrained but thermal budget allows higher R_DS(on) penalty.
IXTH20N50L	R_DS(on) = 0.20 Ω, Q_g = 85 nC, TO-247 package with higher R_thJC = 0.8 °C/W but larger footprint	Better thermal performance at high ambient (>70 °C), but incompatible with TO-220 footprint and higher cost	Select for industrial SMPS requiring extended lifetime at elevated case temperatures, accepting PCB area penalty.

Compared with STP20NM50FP and IXTH20N50L, SIHA20N50E-GE3 delivers the lowest R_DS(on) × Q_g FOM in TO-220 FULLPAK, enabling highest efficiency in space-constrained ATX and LED driver designs without sacrificing avalanche ruggedness or thermal interface simplicity.

Availability

SIHA20N50E-GE3 is available at Aetrix Electronics and suitable for computing power supplies, LED lighting drivers, and industrial switch-mode power supplies requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for SIHA20N50E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power conversion and signal conditioning.

The E Series power MOSFETs, including SIHA20N50E-GE3, are engineered for high-efficiency, hard-switched topologies such as PFC, flyback, and two-switch forward converters where low switching loss and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SIHA20N50E-GE3 at 100 °C case temperature?

The SIHA20N50E-GE3 supports 12 A continuous drain current at T_C = 100 °C, derated linearly from 19 A at 25 °C using a 1.4 W/°C derating factor. This rating assumes proper heatsinking and accounts for R_DS(on) increase with junction temperature - verified in the Absolute Maximum Ratings table of Vishay document 91638.

Does SIHA20N50E-GE3 have an isolated drain tab in its TO-220 FULLPAK package?

Yes, SIHA20N50E-GE3 uses a Thin-Lead TO-220 FULLPAK package with electrically isolated drain tab, allowing direct mechanical mounting to a heatsink without insulating hardware. This isolation is confirmed in Vishay's package drawing 62649 and distinguishes it from standard TO-220 variants with conductive tabs.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHA20N50E-GE3?

The SIHA20N50E-GE3 body diode has a typical reverse recovery charge (Q_rr) of 4.0 μC, measured at T_J = 25 °C, I_F = 10 A, dI/dt = 100 A/μs, and V_R = 25 V. This value is specified in the "Drain-Source Body Diode Characteristics" section of the datasheet and directly impacts snubber design in flyback and forward converters.

Can SIHA20N50E-GE3 be used in 300 kHz switching applications?

Yes, SIHA20N50E-GE3 is suitable for 300 kHz operation: its total gate charge (Q_g = 92 nC) and low output capacitance (C_oss = 87 pF) enable efficient switching at this frequency when paired with a 1–2 A peak gate driver and optimized PCB layout. Turn-off delay (t_d(off) = 48–96 ns) and fall time (t_f = 25–50 ns) confirm sub-100 ns switching transitions.

What is the gate-source threshold voltage range for SIHA20N50E-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHA20N50E-GE3 is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while preventing unintended conduction from noise - critical for stable operation in noisy industrial power environments.

SIHA20N50E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 184mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 92 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1640 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA20N50E-GE3 FAQ

1.How can I place an order for SIHA20N50E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA20N50E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA20N50E-GE3 reliable?

The price and inventory of SIHA20N50E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA20N50E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA20N50E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA20N50E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA20N50E-GE3?

SIHA20N50E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA20N50E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA20N50E-GE3?

For technical support, including SIHA20N50E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA20N50E-GE3 requirements.

6.How does Aetrix verify that SIHA20N50E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA20N50E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA20N50E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA20N50E-GE3?

All SIHA20N50E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA20N50E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA20N50E-GE3 part is unused and in its original packaging.

Return procedure for SIHA20N50E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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