Vishay Siliconix SIHA21N60EF-E3

Overview

SIHA21N60EF-E3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring ultra-low gate charge (56 nC typ.), fast body diode (trr = 135 ns typ.), and low RDS(on) of 0.153 Ω at VGS = 10 V and ID = 11 A. It is engineered for high-efficiency LLC resonant converters and phase-shifted bridge topologies in telecom and solar PV inverters.

For engineers reviewing the SIHA21N60EF-E3 datasheet, SIHA21N60EF-E3 pinout, SIHA21N60EF-E3 application, or SIHA21N60EF-E3 equivalent, key selection criteria include its 367 mJ single-pulse avalanche energy rating, 70 V/ns dV/dt capability at TJ = 125 °C, and optimized Co(er) = 86 pF for ZVS switching in high-frequency SMPS designs.

Technical Context

This EF-series MOSFET employs trench-gate silicon technology with an integrated fast-recovery body diode to reduce reverse recovery charge (Qrr = 0.76 μC typ.) and peak reverse recovery current (IRRM = 11 A). Its low figure-of-merit (RDS(on) × Qg = 8.6 Ω·nC typ.) enables high-power-density operation in hard-switched and resonant topologies.

The device supports ZVS operation via controlled dI/dt (900 A/μs max) and exhibits stable RDS(on) temperature coefficient (0.59 V/°C) and robust UIS capability-critical for unclamped inductive switching in welding and battery charger applications.

Key Specifications

Pinout & Package

SIHA21N60EF-E3 uses the Thin-Lead TO-220 FULLPAK package (JEDEC TO-220AB variant), with drain-connected tab for direct heatsinking and 3.6 °C/W junction-to-case thermal resistance. The package features 0.6–0.8 mm lead thickness and 14.7–15.3 mm body length per Vishay drawing 6021.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW21N60M2 and IXFH21N60P, SIHA21N60EF-E3 delivers superior ZVS performance due to its lower Qrr and tighter trr distribution, while its rated EAS provides design margin in uncontrolled load transients-making it preferred for telecom and solar applications demanding both efficiency and ruggedness.

Availability

SIHA21N60EF-E3 is available at Aetrix Electronics and suitable for telecom power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for SIHA21N60EF-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The EF Series, including SIHA21N60EF-E3, was developed specifically for high-frequency resonant and soft-switching power converters where fast body diode performance and low gate charge are essential to achieving >96% efficiency.

FAQ

What is the maximum continuous drain current for SIHA21N60EF-E3 at 100 °C case temperature?

The maximum continuous drain current for SIHA21N60EF-E3 is 5 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within its 3.6 °C/W RthJC. Engineers must verify heatsink design to maintain TC ≤ 100 °C under full-load conditions for SIHA21N60EF-E3.

Does SIHA21N60EF-E3 have a qualified avalanche rating, and how is it tested?

Yes, SIHA21N60EF-E3 is fully rated for single-pulse avalanche energy (EAS = 367 mJ), tested per JEDEC JESD24-1 with VDD = 50 V, L = 28.2 mH, Rg = 25 Ω, and IAS = 5.1 A at starting TJ = 25 °C. This rating confirms robustness in unclamped inductive switching events common in welding and motor drive applications, and SIHA21N60EF-E3 maintains parametric integrity after such stress.

What is the typical reverse recovery time (trr) of the body diode in SIHA21N60EF-E3, and under what conditions is it measured?

The typical reverse recovery time (trr) of the body diode in SIHA21N60EF-E3 is 135 ns, measured at TJ = 25 °C, IF = IS = 11 A, dI/dt = 100 A/μs, and VR = 400 V. This value is confirmed in the "Drain-Source Body Diode Characteristics" section and directly enables reduced switching loss in phase-shifted bridge and LLC topologies where SIHA21N60EF-E3 is commonly deployed.

Is SIHA21N60EF-E3 compatible with standard TO-220 PCB footprints?

SIHA21N60EF-E3 uses the Thin-Lead TO-220 FULLPAK package, which shares the same outline and mounting hole pattern as standard TO-220AB but has thinner leads (0.6–0.8 mm vs. 1.0–1.2 mm). While mechanical fit is maintained, solder paste volume and reflow profile must be adjusted to prevent lift-off; SIHA21N60EF-E3 is not a drop-in replacement without process validation.

What is the gate threshold voltage range for SIHA21N60EF-E3, and how does it affect drive circuit design?

The gate threshold voltage (VGS(th)) for SIHA21N60EF-E3 ranges from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This standard threshold enables compatibility with 5 V and 10 V gate drivers, but designers must ensure VGS ≥ 10 V for full RDS(on) specification compliance. SIHA21N60EF-E3 does not support logic-level (2.5–4.5 V) drive without significant conduction loss penalty.