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Vishay Siliconix SIHA21N60EF-GE3
- Part No.:
- SIHA21N60EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
SIHA21N60EF-GE3.pdf
- Description:
- N-CHANNEL 600V
- Quantity:
- Payment:
- Shipping:
Inventory:1,963
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Product details
Overview
SIHA21N60EF-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring ultra-low gate charge (Qg = 56 nC typ.), fast body diode (trr = 135 ns typ.), and low RDS(on) of 0.153 Ω at VGS = 10 V. It is engineered for high-efficiency LLC resonant converters and phase-shifted bridge topologies in solar inverters and telecom power supplies.
For engineers reviewing the SIHA21N60EF-GE3 datasheet, SIHA21N60EF-GE3 pinout, SIHA21N60EF-GE3 application, or SIHA21N60EF-GE3 equivalent, key selection criteria include its 367 mJ single-pulse avalanche energy rating, 70 V/ns dV/dt capability at TJ = 125 °C, low Qrr (0.76 μC typ.), and robust UIS performance under unclamped inductive switching.
Technical Context
This EF-series MOSFET employs optimized planar silicon technology with a fast-recovery integral body diode, enabling ZVS operation in resonant topologies. Its low Co(er) (86 pF) and Co(tr) (299 pF) support efficient high-frequency switching up to 500 kHz while minimizing switching losses.
The device integrates a rugged monolithic structure rated for repetitive avalanche energy and features a gate threshold voltage range of 2.0–4.0 V, ensuring stable turn-on behavior across temperature. Its thermal resistance RthJC of 3.6 °C/W enables high-power dissipation in compact heatsink designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports primary-side switching in 400 V DC bus systems with 20 % margin |
| RDS(on) max | 0.176 Ω at VGS = 10 V, TJ = 25 °C - enables <1.9 W conduction loss at 11 A continuous current |
| Qg typ. | 56 nC - reduces gate drive power requirement and allows use of smaller gate drivers |
| trr typ. | 135 ns - minimizes reverse recovery losses in hard- and soft-switching applications |
| EAS | 367 mJ - provides design margin against transient overvoltage during inductive load switching |
| PD max | 35 W at TC = 25 °C - supports thermally constrained PCB-mount designs with moderate heatsinking |
| dV/dt max | 70 V/ns at TJ = 125 °C - ensures noise immunity and reliable commutation in high-dV/dt environments |
Pinout & Package
SIHA21N60EF-GE3 is housed in a Thin-Lead TO-220 FULLPAK package (JEDEC TO-220AB variant), with drain-connected tab for direct heatsink mounting and optimized thermal path (RthJC = 3.6 °C/W). The package features shortened leads for reduced parasitic inductance and improved high-frequency performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main power output terminal / heatsink connection | Electrically connected to metal tab; requires insulated mounting when heatsink is grounded |
| G (Gate) | Control input for channel modulation | Low-input-capacitance node (Ciss = 2030 pF); sensitive to ESD and ringing-requires RC snubber or gate resistor ≤ 25 Ω |
| S (Source) | Power return and reference for gate drive | Common source node for body diode conduction; must be routed with low-inductance path to minimize shoot-through risk |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 135 ns typ., Qrr = 0.76 μC typ.-enables zero-voltage switching in LLC and PSFB topologies without external diode |
| Low gate charge | Qg = 56 nC typ.-reduces driver IC power consumption and simplifies gate drive design for >300 kHz operation |
| Avalanche-rated | EAS = 367 mJ-guarantees safe operation during unclamped inductive transients without derating |
| Low FOM (RDS(on) × Qg) | 8.6 Ω·nC typ.-balances conduction and switching losses for optimal efficiency in 100–500 kHz SMPS |
| High dV/dt immunity | 70 V/ns at TJ = 125 °C-prevents false turn-on in high-noise bridge-leg configurations |
Applications
| Solar Photovoltaic Inverters | Telecom Server Power Supplies |
|---|---|
Use Scenario: Used in the DC-AC H-bridge stage of string inverters handling 600 V DC input and delivering 230 V AC output. IC Role / Device Role / Timing Role: Primary-side switching device in three-level NPC or T-type inverter topology operating at 16–20 kHz with soft switching. Use Value: Low Qrr and fast trr reduce body-diode conduction losses during dead-time, improving full-load efficiency by ≥0.4 % versus standard MOSFETs. |
Use Scenario: Employed in the primary-side active clamp forward or LLC resonant converter of 3 kW telecom rectifiers. IC Role / Device Role / Timing Role: High-side switch in asymmetric half-bridge LLC, operating at 250–350 kHz with ZVS over full load range. Use Value: 56 nC Qg and 2030 pF Ciss enable reliable ZVS down to 10 % load, reducing light-load losses by 1.2 W typical. |
| Industrial Battery Chargers | HID/LED Lighting Ballasts |
Use Scenario: Integrated into bidirectional DC-DC stages of 800 V EV battery test systems requiring regenerative energy recovery. IC Role / Device Role / Timing Role: Synchronous rectifier and freewheeling switch in dual-active-bridge (DAB) topology with 100 kHz switching. Use Value: 0.153 Ω RDS(on) and 21 A IS rating support 97.3 % peak efficiency at 5 kW, with body diode conducting reverse current during phase shift. |
Use Scenario: Drives resonant tank in electronic ballasts for 400 W HID lamps and high-bay LED fixtures with dimming control. IC Role / Device Role / Timing Role: Half-bridge switch in series-resonant topology operating at 25–100 kHz with frequency-modulated dimming. Use Value: 70 V/ns dV/dt rating prevents spurious turn-on during rapid voltage transitions in lamp ignition phase. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM60ND | RDS(on) = 0.23 Ω, Qg = 52 nC, no avalanche rating, trr = 250 ns | Lacks UIS rating and has slower body diode-requires external anti-parallel diode in ZVS designs | Lower cost but needs additional components and layout space; not drop-in for avalanche-critical designs |
| IXFH20N60P | RDS(on) = 0.22 Ω, Qg = 95 nC, EAS = 420 mJ, TO-247 package | Higher gate drive loss and larger footprint; superior avalanche margin but higher switching loss | Better for ruggedness-critical industrial UPS; less suitable for high-frequency, space-constrained telecom SMPS |
Compared with STP20NM60ND and IXFH20N60P, SIHA21N60EF-GE3 delivers the best balance of low Qg, fast trr, and guaranteed avalanche capability in a compact TO-220 FULLPAK-making it optimal for high-density, high-frequency 600 V power stages where board space and thermal management are constrained.
Availability
SIHA21N60EF-GE3 is available at Aetrix Electronics and suitable for solar inverters, telecom server power supplies, and industrial battery chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIHA21N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.
The EF Series, including SIHA21N60EF-GE3, was developed specifically for high-frequency resonant and soft-switching power conversion-targeting solar, telecom, and industrial SMPS where fast body diode performance and low gate charge are critical.
FAQ
What is the maximum continuous drain current rating for SIHA21N60EF-GE3 at 100 °C case temperature?
The SIHA21N60EF-GE3 has a continuous drain current rating of 5 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within its 3.6 °C/W junction-to-case thermal resistance. At TC = 25 °C, the rating rises to 9 A.
Does SIHA21N60EF-GE3 support gate drive voltages below 10 V?
Yes, SIHA21N60EF-GE3 has a gate threshold voltage range of 2.0–4.0 V, allowing functional operation with logic-level gate drives. However, full enhancement and minimum RDS(on) require VGS ≥ 10 V. At VGS = 5 V, RDS(on) increases significantly-data shows ~0.35 Ω typical-so 10 V drive is recommended for optimal conduction efficiency.
Is SIHA21N60EF-GE3 suitable for use in phase-shifted bridge (PSFB) converters?
Yes, SIHA21N60EF-GE3 is explicitly listed in Vishay's applications notes for PSFB topologies. Its fast body diode (trr = 135 ns typ.), low Qrr (0.76 μC typ.), and 70 V/ns dV/dt rating make it well-suited for ZVS operation in PSFB, especially where secondary-side synchronous rectification is not used and body-diode conduction occurs during dead time.
What is the significance of the "-GE3" suffix in SIHA21N60EF-GE3?
The "-GE3" suffix indicates that SIHA21N60EF-GE3 is both lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's Green Standard (document #99912). It denotes the same electrical and thermal specifications as the -E3 version but with enhanced environmental compliance for global market access.
How does the avalanche energy rating of SIHA21N60EF-GE3 impact system design?
The SIHA21N60EF-GE3 is rated for 367 mJ single-pulse avalanche energy (EAS), verified per JEDEC JESD24-1. This allows designers to eliminate external clamping circuits in inductive switching applications-such as relay driving or motor control-without compromising reliability, provided pulse conditions match the test setup (VDD = 50 V, L = 28.2 mH, IAS = 5.1 A).
SIHA21N60EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 176mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 84 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2030 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220 Full Pack
SIHA21N60EF-GE3 FAQ
1.How can I place an order for SIHA21N60EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHA21N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHA21N60EF-GE3 reliable?
The price and inventory of SIHA21N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA21N60EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHA21N60EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA21N60EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHA21N60EF-GE3?
SIHA21N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHA21N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHA21N60EF-GE3?
For technical support, including SIHA21N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA21N60EF-GE3 requirements.
6.How does Aetrix verify that SIHA21N60EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHA21N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA21N60EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHA21N60EF-GE3?
All SIHA21N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA21N60EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHA21N60EF-GE3 part is unused and in its original packaging.
Return procedure for SIHA21N60EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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