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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA21N65EF-E3

Name: SIHA21N65EF-E3
Brand: Vishay Siliconix
SKU: SIHA21N65EF-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA21N65EF-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA21N65EF-E3.pdf

Description:: MOSFET N-CH 650V 21A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA21N65EF-E3 from Vishay Siliconix is a 650 V, 21 A N-channel power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring fast body diode, 0.18 Ω R_DS(on) at 10 V_GS, 106 nC total gate charge, and 367 mJ single-pulse avalanche energy-designed for high-efficiency ZVS phase-shifted bridge and PV inverter DC-link switching.

For engineers reviewing the SIHA21N65EF-E3 datasheet, SIHA21N65EF-E3 pinout, SIHA21N65EF-E3 application, or SIHA21N65EF-E3 equivalent, key selection criteria include its low Q_rr (1.2 μC), reduced C_iss (2322 pF), fast trr (160 ns), and rated dV/dt capability (37 V/ns at T_J = 125 °C) in hard-switched and resonant topologies.

Technical Context

This E-series MOSFET employs optimized planar silicon process with enhanced body diode dynamics to reduce reverse recovery charge and peak current-enabling reliable operation in phase-shifted full-bridge and LCC resonant converters where diode commutation stress is critical. Its 3.6 °C/W R_thJC supports high-power density thermal design.

The device integrates an integral p–n junction body diode rated for 21 A continuous source-drain current and 53 A pulsed current, with V_SD = 0.9–1.2 V at 11 A and T_J = 25 °C. Gate drive requires 10 V for full enhancement, with V_GS(th) spanning 2–4 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus with 1.6× safety margin in solar inverters and telecom rectifiers
R_DS(on) max	0.18 Ω at V_GS = 10 V, T_J = 25 °C - enables <1.9 W conduction loss at 11 A RMS in SMPS primary switches
Q_g max	106 nC - determines gate driver power requirement and switching speed in 100–300 kHz ZVS designs
Q_rr	1.2 μC - directly reduces turn-on losses and EMI in hard-commutated bridge legs
E_AS	367 mJ - allows unclamped inductive switching without failure in welder output stages
C_iss	2322 pF - sets Miller effect magnitude and influences gate drive stability in high-dV/dt environments
trr	160 ns - defines minimum dead-time setting to prevent shoot-through in synchronous rectification

Pinout & Package

Thin-Lead TO-220 FULLPAK package: isolated drain tab (D), vertical leadframe construction, 13.6 mm height, 8.5 mm width, 3.0 mm mounting hole diameter. Designed for direct heatsink mounting with M3 screw (0.6 N·m torque).

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side current path and thermal interface	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits
G (Gate)	Control terminal for channel modulation	High-impedance input requiring low-inductance gate loop; sensitive to ringing due to Crss = 4 pF
S (Source)	Reference node for gate drive and current return	Common connection point for sense resistor, driver return, and local bypass capacitor placement

Key Features

Feature	Design Value
Fast body diode	trr = 160 ns and Q_rr = 1.2 μC enable zero-voltage switching in PSFB without external SiC diodes
Low FOM (R_DS(on) × Q_g)	19.08 Ω·nC - balances conduction and switching loss for 100–200 kHz telecom PSUs
Avalanche-rated	E_AS = 367 mJ - supports robust operation during transient overloads in battery charger output stages
Low C_iss and C_oss	C_iss = 2322 pF, C_oss = 105 pF - minimizes capacitive coupling and improves EMI profile in high-frequency SMPS
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - suitable for green industrial and telecom equipment

Applications

Solar Photovoltaic Inverters	Telecom Server Power Supplies
Use Scenario: DC-link switching in three-level NPC inverters converting 600–1000 V PV array voltage to grid-synchronized AC. IC Role / Device Role / Timing Role: High-side and low-side switch in active clamp or phase-shifted full-bridge topology operating at 16–40 kHz. Use Value: Low Q_rr and fast trr reduce turn-on loss by >35% vs. standard 650 V MOSFETs, improving inverter efficiency above 98.5%.	Use Scenario: Primary-side switching in 3 kW+ server CRPS and ORing applications with 380 V DC distribution. IC Role / Device Role / Timing Role: Synchronous rectifier and high-frequency PWM switch in LLC resonant converter with ZVS operation. Use Value: 37 V/ns dV/dt rating ensures stable operation under rapid bus transients; R_thJC = 3.6 °C/W enables compact heatsink integration.
Industrial Battery Chargers	HID Lighting Ballasts
Use Scenario: Output stage H-bridge in 1–5 kW lithium-ion fast chargers with programmable CC/CV profiles. IC Role / Device Role / Timing Role: Unidirectional or bidirectional power switch controlling transformer primary current in phase-controlled topologies. Use Value: Avalanche energy rating of 367 mJ prevents failure during inductive kickback from transformer leakage inductance.	Use Scenario: Resonant tank switching in electronic ballasts driving 250–1000 W metal halide lamps. IC Role / Device Role / Timing Role: Half-bridge switch operating at 50–200 kHz with high dv/dt during lamp ignition pulses. Use Value: Fast body diode eliminates need for external anti-parallel diode, reducing BOM count and PCB area in compact ballast modules.

Solar Photovoltaic Inverters

Telecom Server Power Supplies

Use Scenario: DC-link switching in three-level NPC inverters converting 600–1000 V PV array voltage to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side and low-side switch in active clamp or phase-shifted full-bridge topology operating at 16–40 kHz.

Use Value: Low Q_rr and fast trr reduce turn-on loss by >35% vs. standard 650 V MOSFETs, improving inverter efficiency above 98.5%.

Use Scenario: Primary-side switching in 3 kW+ server CRPS and ORing applications with 380 V DC distribution.

IC Role / Device Role / Timing Role: Synchronous rectifier and high-frequency PWM switch in LLC resonant converter with ZVS operation.

Use Value: 37 V/ns dV/dt rating ensures stable operation under rapid bus transients; R_thJC = 3.6 °C/W enables compact heatsink integration.

Industrial Battery Chargers

HID Lighting Ballasts

Use Scenario: Output stage H-bridge in 1–5 kW lithium-ion fast chargers with programmable CC/CV profiles.

IC Role / Device Role / Timing Role: Unidirectional or bidirectional power switch controlling transformer primary current in phase-controlled topologies.

Use Value: Avalanche energy rating of 367 mJ prevents failure during inductive kickback from transformer leakage inductance.

Use Scenario: Resonant tank switching in electronic ballasts driving 250–1000 W metal halide lamps.

IC Role / Device Role / Timing Role: Half-bridge switch operating at 50–200 kHz with high dv/dt during lamp ignition pulses.

Use Value: Fast body diode eliminates need for external anti-parallel diode, reducing BOM count and PCB area in compact ballast modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW22N65M5	650 V, 22 A, R_DS(on) = 0.19 Ω, Q_g = 95 nC, no specified Q_rr or trr	Lacks published body diode recovery data; not qualified for repetitive diode commutation	Prefer SIHA21N65EF-E3 where fast diode recovery is required in ZVS or LCC topologies
IXFH20N65X2	650 V, 20 A, R_DS(on) = 0.22 Ω, Q_g = 72 nC, Q_rr = 0.95 μC, trr = 130 ns	Lower Q_rr but higher R_DS(on); TO-247 package increases layout area and thermal resistance	Choose IXFH20N65X2 only if lower gate charge outweighs conduction loss penalty and TO-247 mounting is acceptable

Compared with STW22N65M5 and IXFH20N65X2, SIHA21N65EF-E3 delivers optimal balance of low R_DS(on), controlled Q_rr, and TO-220 FULLPAK thermal performance-making it preferred for space-constrained, high-reliability 650 V SMPS where body diode behavior is critical.

Availability

SIHA21N65EF-E3 is available at Aetrix Electronics and suitable for solar inverters, telecom server power supplies, and industrial battery chargers requiring stable component supply across multi-year production cycles.

Supply support for SIHA21N65EF-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and ruggedness.

The E Series Power MOSFET product line targets high-efficiency switching applications demanding fast body diode performance-including telecom, renewable energy, and industrial power conversion-where reduced Q_rr and avalanche robustness are essential.

FAQ

What is the maximum continuous drain current rating for SIHA21N65EF-E3 at 100 °C case temperature?

The SIHA21N65EF-E3 has a continuous drain current rating of 13 A at T_C = 100 °C, derated linearly from 21 A at 25 °C using a factor of 0.28 W/°C. This rating assumes proper heatsinking and adherence to the SOA curve in Figure 9 of the datasheet. The SIHA21N65EF-E3 must not exceed its 35 W maximum power dissipation limit under these conditions.

Does SIHA21N65EF-E3 support logic-level gate drive?

No, SIHA21N65EF-E3 is not a logic-level MOSFET. Its gate threshold voltage ranges from 2 V to 4 V, but full enhancement requires V_GS = 10 V to achieve the specified R_DS(on) of 0.18 Ω. Driving the SIHA21N65EF-E3 with only 5 V may result in excessive conduction loss and thermal runaway; a 10–15 V gate driver is recommended.

What is the typical reverse recovery time (trr) of the body diode in SIHA21N65EF-E3?

The typical reverse recovery time (t_rr) of the integral body diode in SIHA21N65EF-E3 is 160 ns, measured at T_J = 25 °C, I_F = 11 A, dI/dt = 100 A/μs, and V_R = 25 V. This value is confirmed in the "Drain-Source Body Diode Characteristics" table on page 2 of the datasheet and is critical for minimizing turn-on loss in bridge configurations.

Can SIHA21N65EF-E3 be used in avalanche mode repeatedly?

The SIHA21N65EF-E3 is rated for single-pulse avalanche energy (E_AS) of 367 mJ, but the datasheet does not specify repetitive avalanche capability. Operation in repetitive avalanche is not recommended without additional derating and thermal validation. For applications requiring frequent inductive switching, the SIHA21N65EF-E3 should be operated within its SOA limits rather than relying on avalanche ratings.

What is the thermal resistance from junction to case (R_thJC) for SIHA21N65EF-E3?

The maximum junction-to-case thermal resistance (R_thJC) for SIHA21N65EF-E3 is 3.6 °C/W, as stated in the Thermal Resistance Ratings table. This value applies to the drain tab and assumes proper mounting with M3 screw torque of 0.6 N·m and thermal interface material. It enables accurate junction temperature estimation when designing heatsinks for the SIHA21N65EF-E3.

SIHA21N65EF-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 106 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2322 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA21N65EF-E3 FAQ

1.How can I place an order for SIHA21N65EF-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA21N65EF-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA21N65EF-E3 reliable?

The price and inventory of SIHA21N65EF-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA21N65EF-E3 is usually 5 days.

3.What payment methods are accepted for SIHA21N65EF-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA21N65EF-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA21N65EF-E3?

SIHA21N65EF-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA21N65EF-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA21N65EF-E3?

For technical support, including SIHA21N65EF-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA21N65EF-E3 requirements.

6.How does Aetrix verify that SIHA21N65EF-E3 is sourced from the original manufacturer or authorized distributors?

All SIHA21N65EF-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA21N65EF-E3 meets industry standards.

7.What is the process for return or replacement of SIHA21N65EF-E3?

All SIHA21N65EF-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA21N65EF-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA21N65EF-E3 part is unused and in its original packaging.

Return procedure for SIHA21N65EF-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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