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Vishay Siliconix SIHA21N65EF-GE3
- Part No.:
- SIHA21N65EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
SIHA21N65EF-GE3.pdf
- Description:
- N-CHANNEL 650V
- Quantity:
- Payment:
- Shipping:
Inventory:1,000
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Product details
Overview
SIHA21N65EF-GE3 from Vishay Siliconix is a 650 V, 21 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring fast body diode (trr = 160 ns, Qrr = 1.2 μC), low RDS(on) of 0.18 Ω at 10 V VGS, and ultra-low gate charge (Qg = 106 nC). It is engineered for high-efficiency, high-frequency switching in telecom and solar PV inverters.
For engineers reviewing the SIHA21N65EF-GE3 datasheet, SIHA21N65EF-GE3 pinout, SIHA21N65EF-GE3 application, or SIHA21N65EF-GE3 equivalent, key selection criteria include avalanche energy rating (EAS = 367 mJ), dV/dt ruggedness (37 V/ns), low Coss(tr) = 293 pF, and thermal resistance RthJC = 3.6 °C/W - all critical for ZVS and phase-shifted bridge topologies.
Technical Context
This E-series MOSFET employs optimized planar silicon process with fast-recovery integrated body diode, enabling reduced reverse recovery losses in hard- and soft-switching converters. Its low Qg × RDS(on) figure-of-merit (FOM) and low Crss (4 pF) support high-speed gate drive with minimal Miller-induced oscillation.
The device operates with gate threshold voltage VGS(th) = 2–4 V, supports ±30 V gate drive, and maintains stable RDS(on) up to TJ = 150 °C (RDS(on) typ. 0.15 Ω at 25 °C, normalized to ~1.8× at 150 °C). It is rated for unclamped inductive switching (UIS) and exhibits dV/dt immunity up to 31 V/ns in diode recovery mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 VAC input rectified systems with 20 % margin for surge and ringing |
| RDS(on) max | 0.18 Ω @ 10 V - enables <1.5 W conduction loss at 11 A DC, suitable for 500 W–1 kW SMPS |
| Qg max | 106 nC - reduces gate drive power and allows use of lower-power drivers in high-frequency designs |
| trr / Qrr | 160 ns / 1.2 μC - cuts diode switching loss by >40 % vs. standard MOSFETs in LLC resonant converters |
| EAS | 367 mJ - withstands single-pulse inductive energy without failure in UPS or welder output stages |
| RthJC | 3.6 °C/W - permits 21 A continuous operation with ≤50 °C case rise using standard heatsink mounting |
| Ciss / Crss | 2322 pF / 4 pF - low Crss minimizes Miller effect, enabling clean turn-off in high-dV/dt environments |
Pinout & Package
Package: Thin-Lead TO-220 FULLPAK (lead-free and halogen-free); dimensions per Vishay Doc #62649: D = 8.3–8.7 mm, d1 = 14.7–15.3 mm, L = 13.4–13.8 mm, mounting torque = 0.6 Nm (M3 screw).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path (high-side switch node) | Internally connected to metal tab - must be electrically isolated from heatsink unless referenced to system ground |
| Source (S) | Return path for load current and gate reference | Low-inductance connection required; ties gate driver return and sense resistor to minimize noise coupling |
| Gate (G) | Control terminal for channel modulation | High-impedance input; requires low-impedance gate resistor (Rg = 9.1 Ω typical) to control dv/dt and suppress oscillation |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 160 ns, IRRM = 14 A - eliminates need for external SiC/Schottky catch diode in PFC and half-bridge outputs |
| Low Qg × RDS(on) FOM | 19.1 Ω·nC - improves efficiency in 100–500 kHz telecom PSUs versus competitive 650 V MOSFETs |
| Avalanche-rated | EAS = 367 mJ - enables robust operation in unregulated inductive loads without snubber redesign |
| Low Coss(tr) | 293 pF - reduces capacitive turn-on loss and improves ZVS initiation in phase-shifted full-bridge converters |
| Thermal ruggedness | RthJC = 3.6 °C/W - supports compact heatsinking in space-constrained server PSU modules |
Applications
| Telecom Server PSU | Solar PV Inverter |
|---|---|
Use Scenario: Primary-side switching in 1 kW+ server ATX power supplies using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch with fast body diode conducting freewheeling current during dead time. Use Value: 1.2 μC Qrr reduces diode conduction loss by 35 % vs. standard 650 V MOSFETs, improving full-load efficiency by 0.4 %. | Use Scenario: DC-link switching stage in string inverters converting 600–1000 VDC PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Upper-leg switch in three-level NPC inverter, handling bidirectional current with controlled dV/dt. Use Value: 37 V/ns dV/dt rating prevents false turn-on during high dv/dt commutation, eliminating need for negative gate bias. |
| Fluorescent Ballast | Industrial Battery Charger |
Use Scenario: Resonant half-bridge driver in electronic HID ballasts powering 250–400 W lamps. IC Role / Device Role / Timing Role: Low-loss switching element operating at 40–70 kHz with zero-voltage switching enabled by fast body diode. Use Value: 160 ns trr ensures reliable ZVS across lamp aging and temperature drift, extending ballast lifetime. | Use Scenario: Output stage in 3 kW industrial Li-ion battery chargers using LLC resonant topology. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with integrated body diode conducting reverse recovery current during dead time. Use Value: 0.9–1.2 V VSD at 11 A reduces forward drop loss by 0.35 W vs. discrete Schottky, lowering thermal stress on PCB layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP22N65M2 | RDS(on) = 0.195 Ω, Qg = 95 nC, trr = 220 ns, TO-220FP package | Higher Qrr (1.8 μC) increases diode loss in ZVS designs; lower dV/dt rating (25 V/ns) | Prefer SIHA21N65EF-GE3 where trr < 180 ns and dV/dt > 30 V/ns are required |
| IXFH20N65X2 | RDS(on) = 0.22 Ω, Qg = 72 nC, trr = 140 ns, TO-247 package | Lower Qg improves gate drive efficiency but larger TO-247 footprint increases layout area and thermal resistance | Choose SIHA21N65EF-GE3 when board space and RthJC < 4.0 °C/W are constraints |
Compared with STP22N65M2 and IXFH20N65X2, SIHA21N65EF-GE3 delivers best-in-class trr/Qrr balance and lowest RthJC in TO-220 FULLPAK, making it optimal for thermally dense, high-frequency telecom and solar applications where diode recovery and thermal performance dominate selection.
Availability
SIHA21N65EF-GE3 is available at Aetrix Electronics and suitable for telecom server PSUs, solar PV inverters, and industrial battery chargers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for SIHA21N65EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The E Series Power MOSFET product line targets high-efficiency, high-frequency switching in telecom, industrial, and renewable energy systems - specifically optimizing body diode speed, gate charge, and avalanche ruggedness for ZVS and resonant topologies.
FAQ
What is the maximum continuous drain current rating for SIHA21N65EF-GE3 at 100 °C case temperature?
The SIHA21N65EF-GE3 has a continuous drain current rating of 13 A at TC = 100 °C, derated linearly from 21 A at TC = 25 °C using a factor of 0.28 W/°C. This rating assumes proper heatsinking and junction temperature remains ≤150 °C. The SIHA21N65EF-GE3 datasheet specifies this limit under repetitive conditions with pulse width constrained by thermal limits.
Does SIHA21N65EF-GE3 support gate drive voltages beyond 10 V, and what is its absolute maximum VGS?
Yes, SIHA21N65EF-GE3 supports gate drive up to ±30 V absolute maximum VGS, though RDS(on) is fully specified at VGS = 10 V. Driving above 10 V (e.g., 12–15 V) further reduces RDS(on) and conduction loss but increases gate charge and risk of overvoltage stress. The SIHA21N65EF-GE3 gate oxide is rated for ±30 V, and gate leakage remains ≤±1 μA at VGS = ±30 V per Vishay Doc #91772.
How does the fast body diode in SIHA21N65EF-GE3 improve performance in LLC resonant converters?
The SIHA21N65EF-GE3 body diode achieves trr = 160 ns and Qrr = 1.2 μC at TJ = 25 °C, reducing reverse recovery loss by ~40 % compared to standard 650 V MOSFETs. In LLC converters, this enables cleaner ZVS transition, lower EMI, and higher efficiency at light-to-mid loads. The SIHA21N65EF-GE3's low IRRM (14 A) also prevents current crowding during recovery, enhancing reliability.
Is SIHA21N65EF-GE3 suitable for use in phase-shifted full-bridge (PSFB) topologies, and why?
Yes, SIHA21N65EF-GE3 is explicitly qualified for PSFB topologies due to its 37 V/ns dV/dt rating, 367 mJ UIS capability, and fast body diode (trr = 160 ns). These features ensure robust dead-time conduction, prevent false turn-on during high dv/dt transitions, and sustain energy during inductive switching events. The SIHA21N65EF-GE3 datasheet lists PSFB among its target applications.
What is the thermal resistance from junction to case (RthJC) for SIHA21N65EF-GE3, and how does it impact heatsink design?
The SIHA21N65EF-GE3 has a maximum RthJC of 3.6 °C/W, measured from junction to the drain-connected metal tab. This low value enables efficient heat transfer to the heatsink, allowing 21 A continuous operation with ≤50 °C temperature rise at the tab. For reliable operation, thermal interface material and mechanical mounting (0.6 Nm torque) must maintain low contact resistance - the SIHA21N65EF-GE3 thermal performance depends critically on proper tab isolation and heatsink flatness.
SIHA21N65EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 106 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2322 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220 Full Pack
SIHA21N65EF-GE3 FAQ
1.How can I place an order for SIHA21N65EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHA21N65EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHA21N65EF-GE3 reliable?
The price and inventory of SIHA21N65EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA21N65EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHA21N65EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA21N65EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHA21N65EF-GE3?
SIHA21N65EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHA21N65EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHA21N65EF-GE3?
For technical support, including SIHA21N65EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA21N65EF-GE3 requirements.
6.How does Aetrix verify that SIHA21N65EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHA21N65EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA21N65EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHA21N65EF-GE3?
All SIHA21N65EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA21N65EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHA21N65EF-GE3 part is unused and in its original packaging.
Return procedure for SIHA21N65EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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