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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA21N80AEF-GE3

Name: SIHA21N80AEF-GE3
Brand: Vishay Siliconix
SKU: SIHA21N80AEF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA21N80AEF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA21N80AEF-GE3.pdf

Description:: EF SERIES POWER MOSFET WITH FAST

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Product details

Overview

SIHA21N80AEF-GE3 from Vishay Siliconix is an 800 V, 7.0 A N-channel enhancement-mode power MOSFET in a Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.220 Ω (typ, V_GS = 10 V), Q_g = 47 nC (typ), and avalanche-rated (E_AS = 127 mJ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHA21N80AEF-GE3 datasheet, SIHA21N80AEF-GE3 pinout, SIHA21N80AEF-GE3 application, or SIHA21N80AEF-GE3 equivalent, this page provides verified electrical parameters, thermal resistance (R_thJC = 3.8 °C/W), fast body diode performance (t_rr = 128 ns, Q_rr = 0.8 μC), and real-world design context for high-voltage hard-switched topologies.

Technical Context

This MOSFET employs planar silicon technology with optimized gate charge distribution (Q_gd/Q_g = 44.7%) to reduce Miller effect and improve dv/dt immunity (100 V/ns at T_J = 125 °C). Its low C_oss(er) = 44 pF enables reduced turn-off energy in clamped inductive switching.

The integrated fast-recovery body diode supports synchronous rectification and ZVS-assisted transitions, with V_SD = 1.2 V (T_J = 25 °C, I_S = 11 A) and controlled reverse recovery (I_RRM = 12 A, di/dt = 100 A/μs), making it suitable for continuous conduction mode (CCM) PFC boost stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - Supports 640 V DC bus designs with 25% voltage margin for transient overvoltage in telecom rectifiers.
R_DS(on) typ	0.220 Ω @ V_GS = 10 V - Enables <1.7 W conduction loss at 7 A, critical for thermally constrained 1U server PSUs.
Q_g max	71 nC - Determines gate drive power requirement (~1.4 mW per MHz at 10 V swing) in 100–300 kHz PFC controllers.
E_AS	127 mJ - Withstands unclamped inductive switching events without failure, essential for robust industrial motor drives.
t_rr	128 ns (typ) - Limits diode reverse recovery loss and EMI generation during hard commutation in boost converters.
R_thJC	3.8 °C/W - Allows ~8.7 W dissipation at ΔT = 33 °C case-to-junction rise, supporting forced-air-cooled 500 W PFC modules.
C_oss(er)	44 pF - Reduces stored output capacitance energy (E_oss) at 480 V, lowering turn-off loss in high-frequency SMPS.

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead-free/halogen-free); dimensions per Vishay Doc #62649: D = 8.3–8.7 mm, d1 = 14.7–15.3 mm, L = 13.4–13.8 mm, mounting torque = 0.6 N·m (M3 screw).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side current path	Internally connected to metal tab; electrically and thermally coupled to heatsink - requires isolation washer if heatsink is grounded.
Source (S)	Power return and reference node	Low-inductance connection point for sense resistor and gate driver ground; shared with body diode cathode.
Gate (G)	Control terminal	High-impedance MOS input requiring <100 nA leakage; sensitive to ESD - must be protected with TVS or RC snubber in layout.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	10.34 Ω·nC - Optimizes trade-off between conduction loss and switching loss in 100–250 kHz PFC stages.
Avalanche energy rating	127 mJ single-pulse - Eliminates need for external snubbers in flyback or LLC resonant converter primary switches.
Fast body diode	t_rr = 128 ns, Q_rr = 0.8 μC - Enables zero-voltage switching (ZVS) assist in half-bridge topologies without external diodes.
Reduced C_oss energy term	C_oss(er) = 44 pF - Lowers turn-off loss by ~35% vs. standard 800 V MOSFETs with comparable R_DS(on).
High dv/dt immunity	100 V/ns at T_J = 125 °C - Prevents false turn-on during high-slew-rate switching in multi-kW inverters.

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Active clamp forward or two-transistor forward converter in 1U 80 PLUS Titanium PSUs. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 380–400 V DC bus with 100–200 kHz switching. Use Value: Low R_DS(on) minimizes conduction loss at full load; fast body diode reduces dead-time loss and improves efficiency above 50% load.	Use Scenario: Boost PFC stage in -48 V telecom rectifier systems with 380 V DC output. IC Role / Device Role / Timing Role: Critical conduction mode (CrCM) or continuous conduction mode (CCM) switch operating at 65–150 kHz. Use Value: Low Q_g and C_oss(er) enable high-frequency operation while maintaining >96% efficiency at 3 kW.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string inverters with 1000 V DC input and transformerless topology. IC Role / Device Role / Timing Role: High-side switch in H-bridge or three-level NPC configuration, blocking up to 800 V. Use Value: Avalanche rating ensures reliability during grid fault transients; low t_rr prevents shoot-through in bidirectional switching.	Use Scenario: Inverter leg switch in 3–7.5 kW variable frequency drives for HVAC compressors. IC Role / Device Role / Timing Role: IGBT replacement in 6–16 kHz PWM inverters with active gate driving. Use Value: R_DS(on) stability over temperature (ΔV_DS/T_J = 0.8 V/°C) maintains consistent torque control across ambient range.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Active clamp forward or two-transistor forward converter in 1U 80 PLUS Titanium PSUs.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 380–400 V DC bus with 100–200 kHz switching.

Use Value: Low R_DS(on) minimizes conduction loss at full load; fast body diode reduces dead-time loss and improves efficiency above 50% load.

Use Scenario: Boost PFC stage in -48 V telecom rectifier systems with 380 V DC output.

IC Role / Device Role / Timing Role: Critical conduction mode (CrCM) or continuous conduction mode (CCM) switch operating at 65–150 kHz.

Use Value: Low Q_g and C_oss(er) enable high-frequency operation while maintaining >96% efficiency at 3 kW.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string inverters with 1000 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in H-bridge or three-level NPC configuration, blocking up to 800 V.

Use Value: Avalanche rating ensures reliability during grid fault transients; low t_rr prevents shoot-through in bidirectional switching.

Use Scenario: Inverter leg switch in 3–7.5 kW variable frequency drives for HVAC compressors.

IC Role / Device Role / Timing Role: IGBT replacement in 6–16 kHz PWM inverters with active gate driving.

Use Value: R_DS(on) stability over temperature (ΔV_DS/T_J = 0.8 V/°C) maintains consistent torque control across ambient range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK80Z	R_DS(on) = 0.38 Ω (higher), Q_g = 65 nC, no specified C_oss(er) value	Higher conduction loss limits use to lower-current (<5 A) PFC designs	Prefer SIHA21N80AEF-GE3 where efficiency >95.5% is required at 7 A output.
IXTH20N80L2	R_DS(on) = 0.32 Ω, Q_g = 52 nC, t_rr = 190 ns (slower)	Slower diode recovery increases EMI and loss in CrCM PFC	Select SIHA21N80AEF-GE3 when fast body diode recovery is critical for ZVS or low-noise operation.

Compared with STW20NK80Z and IXTH20N80L2, SIHA21N80AEF-GE3 offers the lowest R_DS(on) × Q_g FOM and fastest body diode among 800 V-class devices, delivering superior efficiency in high-power, high-frequency PFC and SMPS applications where thermal headroom is constrained.

Availability

SIHA21N80AEF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHA21N80AEF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The EF Series power MOSFETs, including SIHA21N80AEF-GE3, were designed specifically for high-efficiency, high-voltage switching in server, telecom, and renewable energy power conversion systems where low R_DS(on) × Q_g and robust avalanche capability are mandatory.

FAQ

What is the maximum continuous drain current for SIHA21N80AEF-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHA21N80AEF-GE3 is 4.4 A at T_C = 100 °C, derated linearly from 7.0 A at 25 °C using a factor of 0.26 W/°C. This rating assumes proper heatsinking and is validated per Vishay Doc #92410, Section "Absolute Maximum Ratings".

Does SIHA21N80AEF-GE3 have a qualified avalanche rating, and what is its value?

Yes, SIHA21N80AEF-GE3 is rated for single-pulse avalanche energy (E_AS) of 127 mJ under defined test conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3.0 A). This rating is confirmed in the Absolute Maximum Ratings table of the official Vishay datasheet (Doc #92410).

What is the typical reverse recovery time (t_rr) of the body diode in SIHA21N80AEF-GE3?

The typical reverse recovery time (t_rr) of the integral body diode in SIHA21N80AEF-GE3 is 128 ns, measured at T_J = 25 °C, I_F = I_S = 11 A, di/dt = 100 A/μs, and V_R = 400 V. This value is specified in the "Drain-Source Body Diode Characteristics" section of the SIHA21N80AEF-GE3 datasheet.

Is SIHA21N80AEF-GE3 lead-free and halogen-free, and which standard does it comply with?

Yes, SIHA21N80AEF-GE3 is lead-free and halogen-free per Vishay's material categorization standard, as stated in the Ordering Information section of the datasheet. Compliance is defined under Vishay Doc #99912, and the "-GE3" suffix explicitly denotes this environmental specification.

What is the thermal resistance from junction to case (R_thJC) for SIHA21N80AEF-GE3?

The maximum junction-to-case (drain) thermal resistance R_thJC for SIHA21N80AEF-GE3 is 3.8 °C/W, as published in the Thermal Resistance Ratings table of the Vishay datasheet (Doc #92410). This value enables accurate thermal modeling for heatsink selection in high-power applications.

SIHA21N80AEF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1511 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA21N80AEF-GE3 FAQ

1.How can I place an order for SIHA21N80AEF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA21N80AEF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA21N80AEF-GE3 reliable?

The price and inventory of SIHA21N80AEF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA21N80AEF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA21N80AEF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA21N80AEF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA21N80AEF-GE3?

SIHA21N80AEF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA21N80AEF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA21N80AEF-GE3?

For technical support, including SIHA21N80AEF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA21N80AEF-GE3 requirements.

6.How does Aetrix verify that SIHA21N80AEF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA21N80AEF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA21N80AEF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA21N80AEF-GE3?

All SIHA21N80AEF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA21N80AEF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA21N80AEF-GE3 part is unused and in its original packaging.

Return procedure for SIHA21N80AEF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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