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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA21N80AE-GE3

Name: SIHA21N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHA21N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA21N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA21N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 7.5A TO220

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Product details

Overview

SIHA21N80AE-GE3 from Vishay Siliconix is an 800 V, 7.5 A N-channel enhancement-mode power MOSFET in a Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.205 Ω (typ.) at V_GS = 10 V, Q_g = 48 nC (typ.), and avalanche-rated E_AS = 127 mJ - optimized for high-voltage PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHA21N80AE-GE3 datasheet, SIHA21N80AE-GE3 pinout, SIHA21N80AE-GE3 application, or SIHA21N80AE-GE3 equivalent, this device delivers verified low FOM (R_DS(on) × Q_g), reduced switching losses via Co(er) = 43 pF, and robust UIS capability - critical for hard-switched, high-reliability industrial power conversion designs.

Technical Context

This MOSFET employs planar silicon technology with optimized charge distribution to achieve low effective output capacitance (Co(er) = 43 pF) and fast switching (t_d(off) = 71 ns typ., t_f = 76 ns typ.) under V_DS = 640 V, I_D = 11 A conditions. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures stable turn-on control across temperature.

The integrated body diode supports synchronous rectification and unclamped inductive switching, with t_rr = 400 ns (typ.) and Q_rr = 5 μC (typ.) at T_J = 25 °C - enabling efficient operation in boost and LLC resonant topologies where diode recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports primary-side switching in 400 V DC bus PFC and offline SMPS up to 380 V AC input.
R_DS(on) typ.	0.205 Ω @ V_GS = 10 V - enables <5 W conduction loss at 7.5 A continuous drain current (T_C = 25 °C).
Q_g max	72 nC - determines gate drive power requirement; typical 48 nC allows use with standard 1–2 A peak gate drivers.
E_AS	127 mJ - rated single-pulse avalanche energy ensures ruggedness during transient overvoltage events in inductive loads.
C_oss(er)	43 pF - energy-related effective output capacitance reduces turn-off switching loss and improves ZVS feasibility.
t_r/t_f	38/76 ns (typ.) - fast edge rates support >100 kHz switching while maintaining controllable dv/dt (70 V/ns max).
T_J range	–55 to +150 °C - qualified for industrial and telecom environments with extended thermal margin.

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead (Pb)-free and halogen-free), with drain-connected tab for direct heatsinking. Dimensions per Vishay Doc. #62649: D = 8.5 mm, d1 = 15.0 mm, E = 10.0 mm, L = 13.6 mm, ØP = 3.2 mm.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path and thermal interface	Electrically connected to package tab; requires insulated mounting or direct heatsink contact with proper torque (0.6 Nm).
Source	Reference node for gate drive and current return	Low-inductance source connection critical for minimizing gate loop ringing and ensuring accurate current sensing.
Gate	Control terminal for channel modulation	High-impedance input (R_g = 0.55 Ω typ.); requires external series resistor (e.g., 20 Ω) to dampen oscillation and control dv/dt.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	10.3 Ω·nC (0.205 Ω × 48 nC) - directly reduces combined conduction and switching loss in high-frequency PFC stages.
Avalanche energy rating (UIS)	127 mJ - eliminates need for external snubbers in flyback or forward converters subject to inductive kickback.
Reduced C_oss(er)	43 pF - cuts stored output capacitance energy by >30% vs. legacy 800 V MOSFETs, improving light-load efficiency.
Body diode t_rr and Q_rr	400 ns / 5 μC - enables reliable operation in quasi-resonant and active-clamp topologies without excessive diode loss or voltage overshoot.
Thin-Lead TO-220 FULLPAK	Lower thermal resistance (R_thJC = 3.8 °C/W) and improved mechanical reliability vs. standard TO-220 due to reinforced leadframe and thinner leads.

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost PFC converter operating at 65–100 kHz with 380 V DC output from 200–240 V AC input. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; handles full line-input current with minimal conduction loss. Use Value: 0.205 Ω R_DS(on) limits conduction loss to <2.5 W at 7.5 A, while 48 nC Q_g enables efficient gate driving with low-power controllers like UCC28070.	Use Scenario: High-density 48 V telecom rectifier using interleaved CCM boost with digital control. IC Role / Device Role / Timing Role: Primary switch in each phase of dual-phase PFC; operates with tight thermal coupling to aluminum-core heatsink. Use Value: R_thJC = 3.8 °C/W and 127 mJ E_AS ensure stable operation under load transients and brownout conditions without derating.
Solar PV Inverter DC-DC Stage	Industrial Motor Drive Brake Circuit
Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V DC input to 400 V DC bus. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology; subjected to repetitive 800 V blocking and 11 A peak currents. Use Value: 800 V V_DS rating and 43 pF C_oss(er) reduce turn-off loss and improve ZVS margin at 50–100 kHz switching frequencies.	Use Scenario: Dynamic braking circuit in 3-phase inverter drives dissipating regenerated motor energy into a resistor bank. IC Role / Device Role / Timing Role: Unidirectional energy dump switch activated during deceleration; must withstand repeated 100–200 ms pulses at full bus voltage. Use Value: Avalanche-rated 127 mJ E_AS and 38 A pulsed drain current (I_DM) allow safe, repeatable energy clamping without external protection components.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC converter operating at 65–100 kHz with 380 V DC output from 200–240 V AC input.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; handles full line-input current with minimal conduction loss.

Use Value: 0.205 Ω R_DS(on) limits conduction loss to <2.5 W at 7.5 A, while 48 nC Q_g enables efficient gate driving with low-power controllers like UCC28070.

Use Scenario: High-density 48 V telecom rectifier using interleaved CCM boost with digital control.

IC Role / Device Role / Timing Role: Primary switch in each phase of dual-phase PFC; operates with tight thermal coupling to aluminum-core heatsink.

Use Value: R_thJC = 3.8 °C/W and 127 mJ E_AS ensure stable operation under load transients and brownout conditions without derating.

Solar PV Inverter DC-DC Stage

Industrial Motor Drive Brake Circuit

Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V DC input to 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology; subjected to repetitive 800 V blocking and 11 A peak currents.

Use Value: 800 V V_DS rating and 43 pF C_oss(er) reduce turn-off loss and improve ZVS margin at 50–100 kHz switching frequencies.

Use Scenario: Dynamic braking circuit in 3-phase inverter drives dissipating regenerated motor energy into a resistor bank.

IC Role / Device Role / Timing Role: Unidirectional energy dump switch activated during deceleration; must withstand repeated 100–200 ms pulses at full bus voltage.

Use Value: Avalanche-rated 127 mJ E_AS and 38 A pulsed drain current (I_DM) allow safe, repeatable energy clamping without external protection components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK80Z	800 V, 20 A, R_DS(on) = 0.38 Ω, Q_g = 100 nC, TO-247 package	Higher current rating but higher R_DS(on) and Q_g; larger footprint and higher gate drive demand	Preferred when higher continuous current (>10 A) and board space permit TO-247 mounting.
IXTH20N80L	800 V, 20 A, R_DS(on) = 0.34 Ω, Q_g = 95 nC, TO-247 package, logic-level gate	Logic-level V_GS(th) (2–4 V) enables direct microcontroller drive but higher conduction loss and thermal mass	Selected for low-voltage gate drive simplicity in cost-sensitive industrial controls where efficiency is secondary to integration.

Compared with STW20NK80Z and IXTH20N80L, SIHA21N80AE-GE3 offers superior FOM (10.3 Ω·nC vs. ≥36 Ω·nC), smaller TO-220 FULLPAK footprint, and lower thermal resistance - making it optimal for space-constrained, high-efficiency 7–10 A PFC and DC-DC designs.

Availability

SIHA21N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHA21N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIHA21N80AE-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in telecom, server, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHA21N80AE-GE3 at 100 °C case temperature?

The SIHA21N80AE-GE3 has a continuous drain current rating of 4.7 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 7.5 A rating at T_C = 25 °C, with a linear derating factor of 0.26 W/°C. Designers must verify junction temperature rise using R_thJC = 3.8 °C/W and actual power dissipation to ensure T_J ≤ 150 °C in final layout.

Does SIHA21N80AE-GE3 have avalanche capability, and how is it rated?

Yes, SIHA21N80AE-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 127 mJ, tested per Note b: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, I_AS = 1.5 A. This rating confirms ruggedness against inductive transients in PFC and flyback circuits without requiring external clamping networks.

What is the gate threshold voltage range for SIHA21N80AE-GE3, and why does it matter for drive design?

The gate threshold voltage (V_GS(th)) for SIHA21N80AE-GE3 is specified as 2.0–4.0 V at V_DS = V_GS, I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise or leakage. Designers must provide ≥6 V minimum gate drive to guarantee full enhancement across temperature and process variation, especially in high-noise power stages.

How does the Co(er) parameter of SIHA21N80AE-GE3 impact switching performance?

SIHA21N80AE-GE3 specifies Co(er) = 43 pF - the energy-related effective output capacitance derived from stored energy in C_oss during V_DS rise from 0 to 80% V_DSS. This low value directly reduces turn-off switching loss (E_off ∝ Co(er) × V_DS² × f_sw) and improves zero-voltage switching (ZVS) feasibility in resonant topologies, contributing to its low FOM and high-efficiency operation above 65 kHz.

Is SIHA21N80AE-GE3 compatible with lead-free soldering processes, and what is the recommended peak temperature?

Yes, SIHA21N80AE-GE3 is lead (Pb)-free and halogen-free, qualified for lead-free reflow per Vishay's S20-0729-Rev. B. The recommended peak soldering temperature is 260 °C for 10 seconds, consistent with IPC/JEDEC J-STD-020. Proper thermal profiling is required to avoid exceeding the 150 °C maximum junction temperature during assembly, particularly given its thin-lead construction and low R_thJC.

SIHA21N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 7.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 235mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1388 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA21N80AE-GE3 FAQ

1.How can I place an order for SIHA21N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA21N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA21N80AE-GE3 reliable?

The price and inventory of SIHA21N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA21N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA21N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA21N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA21N80AE-GE3?

SIHA21N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA21N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA21N80AE-GE3?

For technical support, including SIHA21N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA21N80AE-GE3 requirements.

6.How does Aetrix verify that SIHA21N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA21N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA21N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA21N80AE-GE3?

All SIHA21N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA21N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA21N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHA21N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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