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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA22N60AE-E3

Name: SIHA22N60AE-E3
Brand: Vishay Siliconix
SKU: SIHA22N60AE-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA22N60AE-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA22N60AE-E3.pdf

Description:: MOSFET N-CHANNEL 600V 20A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA22N60AE-E3 from Vishay Siliconix is a 600 V, 8 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.156 Ω (typ. at V_GS = 10 V), Q_g = 48 nC (typ.), and avalanche-rated E_AS = 204 mJ - optimized for high-efficiency server power supplies and PFC stages.

For engineers reviewing the SIHA22N60AE-E3 datasheet, SIHA22N60AE-E3 pinout, SIHA22N60AE-E3 application, or SIHA22N60AE-E3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, and robust unclamped inductive switching capability under TJ ≤ 150 °C operation.

Technical Context

This MOSFET employs planar V-groove silicon technology with optimized cell layout to minimize conduction and switching losses simultaneously. Its C_iss = 1451 pF (typ.) and C_oss = 73 pF (typ.) support fast, controlled turn-on/turn-off transitions while maintaining dV/dt immunity up to 70 V/ns at T_J = 125 °C.

The integrated body diode delivers t_rr = 319 ns (typ.) and Q_rr = 4.9 μC (typ.) at I_F = 11 A, enabling reliable operation in hard-switched and resonant topologies without external diode supplementation in moderate-frequency PFC and SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified rails with ≥20 % safety margin in telecom/server PSUs
R_DS(on) typ.	0.156 Ω at V_GS = 10 V - enables <1.9 W conduction loss at 11 A DC, critical for thermal management in compact PFC stages
Q_g max	96 nC - defines minimum gate drive energy required; low value reduces driver IC stress and improves efficiency above 100 kHz
E_AS	204 mJ - rated single-pulse avalanche energy ensures reliability during transient overvoltage events in inductive load switching
t_r/t_f	33/21 ns (typ.) - enables clean edge control in ZVS/ZCS circuits with minimal switching loss penalty
T_J range	–55 to +150 °C - qualified for industrial ambient environments and high-power-density enclosed systems

Pinout & Package

Thin-Lead TO-220 FULLPAK package: 3-terminal through-hole outline with drain-connected tab, optimized for low-inductance PCB mounting and enhanced thermal transfer via case-to-heatsink interface (R_thJC = 3.8 °C/W max).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heatsink connection	Electrically connected to metal tab; must be isolated from chassis unless system ground-referenced; primary thermal path
Source	Reference node for gate drive and current return	Low-impedance return path for load current; referenced by gate driver; impacts common-source inductance in high-dI/dt switching
Gate	Control terminal for channel modulation	High-impedance CMOS-compatible input; requires <96 nC charge for full enhancement; sensitive to ESD (±30 V rating)

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	14.9 Ω·nC - directly reduces total power loss in hard-switched converters operating at 65–300 kHz
Avalanche energy rating	204 mJ (single-pulse) - eliminates need for external clamping in flyback or LLC primary-side switching with inductive kick
Ultra-low Q_gd/Q_g ratio	25/96 ≈ 26 % - minimizes Miller plateau duration, improving controllability during dV/dt transitions
Body diode Q_rr	4.9 μC (typ.) - enables zero-voltage switching in asymmetric half-bridge PFC without reverse recovery-induced voltage spikes

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3.3 kW front-end AC-DC converter with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, switching at 150 kHz with synchronous rectification on secondary. Use Value: Low R_DS(on) and Q_g reduce conduction and gate drive losses by 18 % vs. legacy 650 V MOSFETs, enabling >96 % efficiency at full load.	Use Scenario: Boost PFC stage in -48 V telecom rectifier feeding distributed DC bus. IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode (CCM) at 100–200 kHz. Use Value: 204 mJ E_AS withstands line surges and inrush transients without failure; t_r/t_f < 66 ns ensures clean zero-crossing detection for digital PFC controllers.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg IGBT co-driver replacement in high-side position, handling 800 V DC link with bidirectional current flow. Use Value: Body diode t_rr = 319 ns prevents shoot-through during commutation; R_thJC = 3.8 °C/W allows direct heatsink mounting without thermal interface pads.	Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive operating at 4 kHz PWM frequency. IC Role / Device Role / Timing Role: Low-side switching element in three-phase bridge, conducting 20 A RMS with 100 A peak surge capability. Use Value: ID_M = 49 A pulsed rating supports motor startup surges; V_GS(th) = 2–4 V ensures stable turn-on with standard 12 V gate drivers.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3.3 kW front-end AC-DC converter with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, switching at 150 kHz with synchronous rectification on secondary.

Use Value: Low R_DS(on) and Q_g reduce conduction and gate drive losses by 18 % vs. legacy 650 V MOSFETs, enabling >96 % efficiency at full load.

Use Scenario: Boost PFC stage in -48 V telecom rectifier feeding distributed DC bus.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode (CCM) at 100–200 kHz.

Use Value: 204 mJ E_AS withstands line surges and inrush transients without failure; t_r/t_f < 66 ns ensures clean zero-crossing detection for digital PFC controllers.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology.

IC Role / Device Role / Timing Role: Upper-leg IGBT co-driver replacement in high-side position, handling 800 V DC link with bidirectional current flow.

Use Value: Body diode t_rr = 319 ns prevents shoot-through during commutation; R_thJC = 3.8 °C/W allows direct heatsink mounting without thermal interface pads.

Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive operating at 4 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase bridge, conducting 20 A RMS with 100 A peak surge capability.

Use Value: ID_M = 49 A pulsed rating supports motor startup surges; V_GS(th) = 2–4 V ensures stable turn-on with standard 12 V gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60ND	R_DS(on) = 0.22 Ω (typ.), Q_g = 60 nC, no UIS rating	Lacks avalanche qualification; requires external snubbers in inductive loads	Lower cost where surge immunity is managed externally and efficiency margin is relaxed
IXFH20N60P	R_DS(on) = 0.20 Ω (typ.), Q_g = 72 nC, TO-247 package	Larger footprint and higher R_thJC (0.5 °C/W) demands larger heatsink	Preferred when higher peak current (IDM = 80 A) and long-term reliability outweigh board space constraints

Compared with STP20NM60ND and IXFH20N60P, SIHA22N60AE-E3 offers the lowest R_DS(on) × Q_g FOM and integrated avalanche ruggedness in a compact TO-220 FULLPAK, making it optimal for space-constrained, high-efficiency 600 V switching where transient robustness is non-negotiable.

Availability

SIHA22N60AE-E3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHA22N60AE-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The E Series Power MOSFET product line targets high-reliability, high-efficiency switching in industrial, telecom, and renewable energy systems - engineered for low FOM, fast switching, and guaranteed avalanche performance.

FAQ

What is the maximum continuous drain current rating for SIHA22N60AE-E3 at 100 °C case temperature?

The SIHA22N60AE-E3 has a continuous drain current rating of 5 A at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within R_thJC = 3.8 °C/W. At T_C = 25 °C, the rating increases to 8 A. Designers must verify junction temperature rise using actual PCB layout and heatsink conditions before finalizing thermal design for SIHA22N60AE-E3.

Does SIHA22N60AE-E3 support logic-level gate drive?

No, SIHA22N60AE-E3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) is specified from 2 V to 4 V, but full enhancement requires V_GS = 10 V to achieve R_DS(on) = 0.156 Ω (typ.). It is incompatible with 3.3 V or 5 V microcontroller outputs without level-shifting or gate driver amplification. The SIHA22N60AE-E3 datasheet explicitly states test conditions at V_GS = 10 V for all key parameters, confirming standard gate drive requirements.

Is SIHA22N60AE-E3 halogen-free?

No - SIHA22N60AE-E3 is lead (Pb)-free but not halogen-free. The halogen-free version is designated SIHA22N60AE-GE3, as shown in the Ordering Information section. Both variants share identical electrical and thermal specifications, differing only in material composition compliance. SIHA22N60AE-E3 meets RoHS Directive 2011/65/EU but does not satisfy IEC 61249-2-21 halogen-free requirements.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHA22N60AE-E3?

The typical reverse recovery charge Q_rr of the integral body diode in SIHA22N60AE-E3 is 4.9 μC, measured at T_J = 25 °C, I_F = 11 A, dI/dt = 100 A/μs, and V_R = 25 V. This value is confirmed in the "Drain-Source Body Diode Characteristics" table. The low Q_rr contributes to reduced switching loss and EMI in hard-commutated topologies, and is a key differentiator versus older 600 V MOSFETs with Q_rr > 10 μC.

Can SIHA22N60AE-E3 be used in synchronous rectification applications?

No - SIHA22N60AE-E3 is not recommended for synchronous rectification due to its relatively high R_DS(on) (0.156 Ω) and non-optimized body diode characteristics for bidirectional conduction. Synchronous rectifiers require very low R_DS(on), fast reverse recovery, and often dual-die configurations. The SIHA22N60AE-E3 datasheet positions it for primary-side switching in PFC and SMPS, not secondary-side rectification. For SR use, Vishay's SiR626DP or similar trench-Si devices are better suited.

SIHA22N60AE-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1451 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA22N60AE-E3 FAQ

1.How can I place an order for SIHA22N60AE-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA22N60AE-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA22N60AE-E3 reliable?

The price and inventory of SIHA22N60AE-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA22N60AE-E3 is usually 5 days.

3.What payment methods are accepted for SIHA22N60AE-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA22N60AE-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA22N60AE-E3?

SIHA22N60AE-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA22N60AE-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA22N60AE-E3?

For technical support, including SIHA22N60AE-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA22N60AE-E3 requirements.

6.How does Aetrix verify that SIHA22N60AE-E3 is sourced from the original manufacturer or authorized distributors?

All SIHA22N60AE-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA22N60AE-E3 meets industry standards.

7.What is the process for return or replacement of SIHA22N60AE-E3?

All SIHA22N60AE-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA22N60AE-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA22N60AE-E3 part is unused and in its original packaging.

Return procedure for SIHA22N60AE-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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