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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA22N60AE-GE3

Name: SIHA22N60AE-GE3
Brand: Vishay Siliconix
SKU: SIHA22N60AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA22N60AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA22N60AE-GE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA22N60AE-GE3 from Vishay Siliconix is a 600 V, 8 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.156 Ω (typ. at V_GS = 10 V), Q_g = 48 nC (typ.), and avalanche-rated (E_AS = 204 mJ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHA22N60AE-GE3 datasheet, SIHA22N60AE-GE3 pinout, SIHA22N60AE-GE3 application, or SIHA22N60AE-GE3 equivalent, key selection criteria include its 600 V V_DS, ultra-low gate charge, UIS ruggedness, and thermal resistance of 3.8 °C/W (junction-to-case), critical for compact, high-reliability power conversion designs.

Technical Context

This MOSFET employs planar silicon technology optimized for hard-switched and resonant topologies. Its low C_iss (1451 pF) and C_oss (73 pF) reduce capacitive losses, while the 25 nC Q_gd/Q_g ratio supports fast, controllable turn-off with minimal Miller-induced oscillation.

The integrated body diode exhibits t_rr = 319 ns (typ.) and Q_rr = 4.9 μC at 25 °C, enabling robust operation in continuous conduction mode (CCM) PFC. Its dV/dt immunity of 70 V/ns (T_J = 125 °C) ensures stable performance under high dv/dt stress in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full-line transient surges in 400 V DC bus applications without breakdown
R_DS(on) max	0.180 Ω at 10 V - Limits conduction loss to ≤1.9 W at 11 A ID, enabling thermally constrained layouts
Q_g max	96 nC - Enables efficient gate drive with <1 W driver power at 100 kHz switching
E_AS	204 mJ - Sustains unclamped inductive energy during fault conditions without failure
R_thJC	3.8 °C/W - Allows 27 W power dissipation at 100 °C case temperature before reaching 150 °C T_J
C_iss	1451 pF - Reduces gate drive current demand and improves EMI profile in high-frequency operation
t_r/t_f	33/21 ns (typ.) - Supports clean, low-loss transitions in 100–300 kHz SMPS designs

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead-free and halogen-free); dimensions per Vishay Doc. #62649: D = 8.3–8.7 mm, d1 = 14.7–15.3 mm, L = 13.4–13.8 mm, with drain tab electrically connected to the die backside.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-side power switch node	Electrically connected to package tab; requires insulated mounting or heatsink isolation
Gate	Control input	Low-impedance CMOS-compatible input; 0.6 Ω typical gate resistance minimizes ringing
Source	Reference return path	Common return for load current and gate drive; ties to power ground in buck/PFC topologies

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	7.47 Ω·nC - Balances conduction and switching loss for optimal efficiency at 100–200 kHz
Avalanche energy rating	204 mJ single-pulse - Eliminates need for external snubbers in inductive load switching
Ultra-low Q_gd	25 nC - Minimizes Miller plateau duration, improving dV/dt immunity and reducing shoot-through risk
Low C_iss/C_oss ratio	1451/73 pF → ~20:1 - Enhances voltage gain stability and reduces gate drive power
Body diode Q_rr	4.9 μC (typ.) - Low reverse recovery charge reduces diode-induced switching loss in synchronous rectification

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost PFC stage operating at 100 kHz with 400 V DC output and 3 kW output power. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter, handling peak currents up to 11 A. Use Value: SIHA22N60AE-GE3's 0.156 Ω R_DS(on) and 48 nC Q_g minimize total losses (<2.5 W), enabling >98% PFC efficiency without forced air cooling.	Use Scenario: Half-bridge LLC resonant DC/DC stage in 48 V telecom rectifier with 2 kW output. IC Role / Device Role / Timing Role: High-side switch in primary-side half-bridge, operating at 300–500 kHz with ZVS. Use Value: SIHA22N60AE-GE3's low C_oss (73 pF) and 70 V/ns dV/dt rating ensure reliable zero-voltage switching and prevent false turn-on during high dv/dt transitions.
Solar PV Inverter DC Link	Industrial Motor Drive Inverter
Use Scenario: DC link switching in string-level 3 kW photovoltaic inverter with 600 V bus. IC Role / Device Role / Timing Role: Unidirectional switch in DC bus protection circuit and auxiliary DC/DC bias supply. Use Value: SIHA22N60AE-GE3's 204 mJ E_AS withstands lightning-induced transients on PV input lines without derating or external clamping.	Use Scenario: Brake chopper switch in 7.5 kW variable frequency drive dissipating regenerative energy. IC Role / Device Role / Timing Role: Energy-dumping switch activated during overvoltage events on DC bus. Use Value: SIHA22N60AE-GE3's 33 W P_D rating and 3.8 °C/W R_thJC allow 10 s pulses at 49 A without exceeding 150 °C junction temperature.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC stage operating at 100 kHz with 400 V DC output and 3 kW output power.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter, handling peak currents up to 11 A.

Use Value: SIHA22N60AE-GE3's 0.156 Ω R_DS(on) and 48 nC Q_g minimize total losses (<2.5 W), enabling >98% PFC efficiency without forced air cooling.

Use Scenario: Half-bridge LLC resonant DC/DC stage in 48 V telecom rectifier with 2 kW output.

IC Role / Device Role / Timing Role: High-side switch in primary-side half-bridge, operating at 300–500 kHz with ZVS.

Use Value: SIHA22N60AE-GE3's low C_oss (73 pF) and 70 V/ns dV/dt rating ensure reliable zero-voltage switching and prevent false turn-on during high dv/dt transitions.

Solar PV Inverter DC Link

Industrial Motor Drive Inverter

Use Scenario: DC link switching in string-level 3 kW photovoltaic inverter with 600 V bus.

IC Role / Device Role / Timing Role: Unidirectional switch in DC bus protection circuit and auxiliary DC/DC bias supply.

Use Value: SIHA22N60AE-GE3's 204 mJ E_AS withstands lightning-induced transients on PV input lines without derating or external clamping.

Use Scenario: Brake chopper switch in 7.5 kW variable frequency drive dissipating regenerative energy.

IC Role / Device Role / Timing Role: Energy-dumping switch activated during overvoltage events on DC bus.

Use Value: SIHA22N60AE-GE3's 33 W P_D rating and 3.8 °C/W R_thJC allow 10 s pulses at 49 A without exceeding 150 °C junction temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60FD	600 V, 20 A, R_DS(on) = 0.30 Ω, Q_g = 42 nC, TO-220FP package	Higher R_DS(on) increases conduction loss; lower Q_g improves switching but lacks UIS rating	Prefer for cost-sensitive, lower-current (<8 A) designs where avalanche ruggedness is not required
IXTH24N60L2	600 V, 24 A, R_DS(on) = 0.22 Ω, Q_g = 65 nC, TO-247 package	Higher current rating and larger package; higher Q_g demands stronger gate driver	Choose when board space allows TO-247 and peak ID exceeds 11 A in intermittent duty

Compared with STP20NM60FD and IXTH24N60L2, SIHA22N60AE-GE3 offers the best balance of low R_DS(on), moderate Q_g, and certified avalanche capability in a compact TO-220 FULLPAK-ideal for space-constrained, high-reliability 600 V power stages.

Availability

SIHA22N60AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHA22N60AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The E Series Power MOSFET product line-including SIHA22N60AE-GE3-is engineered for high-efficiency, high-voltage switching in server, telecom, and renewable energy power systems where low FOM and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current rating for SIHA22N60AE-GE3 at 100 °C case temperature?

The SIHA22N60AE-GE3 has a continuous drain current rating of 5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and ensures safe operation below 150 °C junction temperature under steady-state conditions. The SIHA22N60AE-GE3 must be mounted on an adequately sized heatsink to maintain this rating.

Does SIHA22N60AE-GE3 have a fully rated avalanche capability, and what is the test condition?

Yes, SIHA22N60AE-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 204 mJ. Per Vishay Doc. #91924, the test uses V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.8 A. This rating confirms ruggedness against inductive switching faults without external protection, a key differentiator versus non-UIS MOSFETs.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHA22N60AE-GE3, and why does it matter?

The SIHA22N60AE-GE3 body diode has a typical Q_rr of 4.9 μC at T_J = 25 °C, IS = 11 A, dI/dt = 100 A/μs, and V_R = 25 V. This low Q_rr directly reduces switching loss and EMI in hard-commutated topologies like boost PFC, where the body diode conducts during dead time. Lower Q_rr also decreases peak reverse recovery current (I_RRM = 28 A), easing gate driver stress.

Can SIHA22N60AE-GE3 be used in place of logic-level MOSFETs in 5 V gate drive circuits?

No, SIHA22N60AE-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, but it requires V_GS = 10 V to achieve the specified R_DS(on) of 0.156 Ω. At 5 V gate drive, R_DS(on) rises significantly (>0.5 Ω), increasing conduction loss beyond acceptable levels. The SIHA22N60AE-GE3 must be driven with a 10 V–15 V gate supply for optimal performance.

What is the thermal resistance from junction to case (R_thJC) for SIHA22N60AE-GE3, and how is it measured?

The SIHA22N60AE-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 3.8 °C/W, measured from the die junction to the drain tab surface per JEDEC JESD51-1. This value assumes proper mounting with thermal interface material and mechanical torque of 0.6 Nm on the M3 screw. It enables accurate thermal modeling for heatsink sizing in high-power applications such as 3 kW PFC modules.

SIHA22N60AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1451 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA22N60AE-GE3 FAQ

1.How can I place an order for SIHA22N60AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA22N60AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA22N60AE-GE3 reliable?

The price and inventory of SIHA22N60AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA22N60AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA22N60AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA22N60AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA22N60AE-GE3?

SIHA22N60AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA22N60AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA22N60AE-GE3?

For technical support, including SIHA22N60AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA22N60AE-GE3 requirements.

6.How does Aetrix verify that SIHA22N60AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA22N60AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA22N60AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA22N60AE-GE3?

All SIHA22N60AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA22N60AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA22N60AE-GE3 part is unused and in its original packaging.

Return procedure for SIHA22N60AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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