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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA22N60AEL-GE3

Name: SIHA22N60AEL-GE3
Brand: Vishay Siliconix
SKU: SIHA22N60AEL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA22N60AEL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA22N60AEL-GE3.pdf

Description:: MOSFET N-CH 600V 21A TO220

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Product details

Overview

SIHA22N60AEL-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring 0.155 Ω R_DS(on) at V_GS = 10 V, 41 nC typical Q_g, and 183 mJ single-pulse avalanche energy-designed for high-efficiency switch-mode power supplies in telecom and server applications.

For engineers reviewing the SIHA22N60AEL-GE3 datasheet, SIHA22N60AEL-GE3 pinout, SIHA22N60AEL-GE3 application, or SIHA22N60AEL-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, avalanche-rated ruggedness, and thermal performance with R_thJC = 3.6 °C/W-critical for PFC and high-frequency SMPS designs.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage switching with fast body diode recovery (t_rr = 285 ns typ.) and low C_iss (1757 pF) to minimize switching losses. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures robust noise immunity while enabling standard 10 V gate drive compatibility.

The device integrates an intrinsic fast-recovery body diode rated for 21 A continuous source-drain current and supports unclamped inductive switching up to 183 mJ. Thermal design is enabled by a low junction-to-case resistance (3.6 °C/W) and operation across -55 °C to +150 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for telecom/PFC applications
R_DS(on) typ.	0.155 Ω at V_GS = 10 V - enables <1.7 W conduction loss at 11 A, reducing heatsink requirements
Q_g typ.	41 nC - lowers gate drive power and enables >200 kHz switching without excessive driver loss
E_AS	183 mJ - provides robustness against inductive turn-off transients in motor drives and SMPS
t_rr	285 ns typ. - minimizes diode reverse recovery loss and EMI in hard-switched topologies
R_thJC	3.6 °C/W - allows direct mounting to heatsink with predictable thermal rise under 35 W dissipation

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK - surface-mount compatible variant of TO-220 with enhanced thermal performance and lead-free/halogen-free construction per JEDEC standards.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path from drain to source	Connected to tab; electrically and thermally tied to heatsink-requires isolation if heatsink is grounded
Source (S)	Reference node for gate drive and current return	Low-inductance connection critical for stable switching; ties to power ground plane
Gate (G)	Control terminal for channel modulation	High-impedance input requiring low-impedance gate driver (R_g = 9.1 Ω typical test condition)

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	6.35 Ω·nC - directly reduces total switching + conduction loss in high-frequency converters
Avalanche energy rating (E_AS)	183 mJ - eliminates need for external snubbers in inductive load switching
Body diode t_rr and Q_rr	285 ns / 4.1 μC - enables ZVS-capable topologies and reduces diode-induced voltage spikes
Thin-Lead TO-220 FULLPAK	Enhanced thermal interface vs. standard TO-220 - delivers 30 % lower R_thJC for same footprint

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 48 V/54 V intermediate bus converters delivering >1 kW output. IC Role / Device Role / Timing Role: High-voltage synchronous rectifier and PFC switch operating at 100–200 kHz. Use Value: Low Q_g and R_DS(on) reduce switching and conduction losses, improving efficiency from 94 % to 95.2 % at full load.	Use Scenario: Hot-swap OR-ing and backup power switching in distributed power architecture (DPA) systems. IC Role / Device Role / Timing Role: High-reliability power path switch with fast fault response and avalanche tolerance. Use Value: 183 mJ E_AS withstands line transients and inrush currents without failure during hot-plug events.
Solar PV Inverters	Induction Heating
Use Scenario: DC-link switching in string inverters handling 600–1000 V DC input with MPPT tracking. IC Role / Device Role / Timing Role: Main inverter bridge switch operating in hard-switched or phase-shifted full-bridge topology. Use Value: 600 V rating and low C_oss (74 pF) enable reliable operation under high dv/dt conditions up to 50 V/ns.	Use Scenario: Resonant tank switching in 20–100 kHz induction cooktops and industrial heating systems. IC Role / Device Role / Timing Role: High-current, high-dv/dt switch driving series-resonant L-C loads. Use Value: Fast body diode recovery (285 ns) prevents shoot-through and reduces cross-conduction loss during zero-voltage switching transitions.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 48 V/54 V intermediate bus converters delivering >1 kW output.

IC Role / Device Role / Timing Role: High-voltage synchronous rectifier and PFC switch operating at 100–200 kHz.

Use Value: Low Q_g and R_DS(on) reduce switching and conduction losses, improving efficiency from 94 % to 95.2 % at full load.

Use Scenario: Hot-swap OR-ing and backup power switching in distributed power architecture (DPA) systems.

IC Role / Device Role / Timing Role: High-reliability power path switch with fast fault response and avalanche tolerance.

Use Value: 183 mJ E_AS withstands line transients and inrush currents without failure during hot-plug events.

Solar PV Inverters

Induction Heating

Use Scenario: DC-link switching in string inverters handling 600–1000 V DC input with MPPT tracking.

IC Role / Device Role / Timing Role: Main inverter bridge switch operating in hard-switched or phase-shifted full-bridge topology.

Use Value: 600 V rating and low C_oss (74 pF) enable reliable operation under high dv/dt conditions up to 50 V/ns.

Use Scenario: Resonant tank switching in 20–100 kHz induction cooktops and industrial heating systems.

IC Role / Device Role / Timing Role: High-current, high-dv/dt switch driving series-resonant L-C loads.

Use Value: Fast body diode recovery (285 ns) prevents shoot-through and reduces cross-conduction loss during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM60ND	R_DS(on) = 0.19 Ω (higher), Q_g = 45 nC, TO-220FP package, no avalanche rating	Lacks UIS rating; less suitable for inductive switching or transient-prone environments	Prefer SIHA22N60AEL-GE3 where unclamped inductive stress or reliability-critical operation is required
IXTH24N60L2	R_DS(on) = 0.17 Ω, Q_g = 36 nC, TO-247 package, higher R_thJC (0.5 °C/W)	Larger footprint and higher thermal resistance; requires larger heatsink area	Choose SIHA22N60AEL-GE3 for space-constrained TO-220-based designs needing comparable performance

Compared with STP22NM60ND and IXTH24N60L2, SIHA22N60AEL-GE3 delivers superior avalanche ruggedness, lower on-resistance in the same package, and better thermal efficiency-making it optimal for compact, high-reliability 600 V SMPS and PFC stages where layout area and transient immunity are constrained.

Availability

SIHA22N60AEL-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHA22N60AEL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The EL Series power MOSFETs-including SIHA22N60AEL-GE3-are engineered for high-voltage, high-frequency switching in mission-critical power conversion systems where low loss, fast recovery, and avalanche reliability are mandatory.

FAQ

What is the maximum continuous drain current for SIHA22N60AEL-GE3 at 100 °C case temperature?

The SIHA22N60AEL-GE3 supports 13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and must be validated with actual board-level thermal design including heatsink interface resistance and ambient airflow.

Does SIHA22N60AEL-GE3 have a qualified avalanche rating, and what is its value?

Yes, SIHA22N60AEL-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 183 mJ at T_J = 25 °C, tested per industry-standard conditions (V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3.6 A). This rating is guaranteed and not typical-only.

What is the gate-source threshold voltage range for SIHA22N60AEL-GE3?

The SIHA22N60AEL-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against false triggering in noisy power environments.

Can SIHA22N60AEL-GE3 be used in place of logic-level MOSFETs?

No-SIHA22N60AEL-GE3 is not a logic-level device. Its V_GS(th) minimum is 2.0 V, but it is characterized and optimized for 10 V gate drive (e.g., R_DS(on) = 0.155 Ω at V_GS = 10 V). Using 5 V drive yields significantly higher on-resistance and is not recommended for production designs.

What is the typical reverse recovery time (t_rr) of the body diode in SIHA22N60AEL-GE3?

The SIHA22N60AEL-GE3 body diode has a typical reverse recovery time (t_rr) of 285 ns at T_J = 25 °C, I_F = 11 A, di/dt = 100 A/μs, and V_R = 400 V. This fast recovery supports high-frequency hard-switching and reduces associated switching losses and EMI generation.

SIHA22N60AEL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EL

Package/Case:: TO-220-3 Full Pack

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 82 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1757 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA22N60AEL-GE3 FAQ

1.How can I place an order for SIHA22N60AEL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA22N60AEL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA22N60AEL-GE3 reliable?

The price and inventory of SIHA22N60AEL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA22N60AEL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA22N60AEL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA22N60AEL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA22N60AEL-GE3?

SIHA22N60AEL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA22N60AEL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA22N60AEL-GE3?

For technical support, including SIHA22N60AEL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA22N60AEL-GE3 requirements.

6.How does Aetrix verify that SIHA22N60AEL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA22N60AEL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA22N60AEL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA22N60AEL-GE3?

All SIHA22N60AEL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA22N60AEL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA22N60AEL-GE3 part is unused and in its original packaging.

Return procedure for SIHA22N60AEL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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