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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA22N60E-E3

Name: SIHA22N60E-E3
Brand: Vishay Siliconix
SKU: SIHA22N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA22N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA22N60E-E3.pdf

Description:: MOSFET N-CH 600V 21A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA22N60E-E3 from Vishay Siliconix is a 600 V, 8 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.15 Ω (typ) at V_GS = 10 V, Q_g = 57 nC (typ), and avalanche-rated E_AS = 367 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages.

For engineers reviewing the SIHA22N60E-E3 datasheet, SIHA22N60E-E3 pinout, SIHA22N60E-E3 application, or SIHA22N60E-E3 equivalent, this device delivers low conduction loss and fast switching with validated UIS ruggedness, making it suitable for industrial AC/DC converters, HID lighting ballasts, and ATX power supply primary-side switching.

Technical Context

This MOSFET employs planar silicon technology with optimized gate charge profile to reduce both switching and conduction losses. Its low C_iss (1920 pF typ) and ultra-low Q_gd/Q_g ratio (24/86 nC max) support high-frequency operation up to 100 kHz in hard-switched topologies.

The integrated body diode exhibits t_rr = 344 ns (typ) and Q_rr = 5.3 μC (typ) at T_J = 25 °C, enabling reliable operation in discontinuous conduction mode (DCM) PFC and flyback converters without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 VAC input rectified systems with ≥20 % safety margin
R_DS(on) max @ 25 °C	0.18 Ω - enables ≤1.5 W conduction loss at 8 A continuous drain current
Q_g max	86 nC - reduces gate drive power requirement and allows use of low-power drivers
E_AS single-pulse	367 mJ - ensures robustness against inductive switching transients without external clamping
C_iss typ	1920 pF - lowers Miller effect and improves dv/dt immunity in high-side configurations
t_r/t_f typ	27/35 ns - supports efficient 65–100 kHz SMPS designs with minimal switching loss
R_thJC max	3.6 °C/W - enables thermal design with standard heatsink mounting (M3 screw, 0.6 Nm torque)

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK - thermally enhanced variant with reduced leadframe thickness (A = 4.3–4.7 mm, d1 = 14.7–15.3 mm) for improved solder joint reliability and lower thermal resistance to PCB.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path collector terminal	Internally connected to metal tab - must be electrically isolated and thermally coupled to heatsink
Source (S)	Reference node for gate drive and current return	Low-inductance connection critical for stable switching; ties to power ground plane
Gate (G)	Control electrode for channel formation	High-impedance input requiring <100 nA leakage control; sensitive to ESD and ringing

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	12.8 Ω·nC (0.15 Ω × 86 nC max) - balances conduction and switching loss for optimal efficiency at 65–100 kHz
Avalanche energy rating	367 mJ single-pulse - eliminates need for external RCD clamp in flyback/PFC circuits
Ultra-low Q_gd	24 nC max - minimizes Miller plateau duration and improves turn-off controllability
Low C_oss (energy-related)	73 pF Co(er) - reduces capacitive switching loss during hard commutation
Body diode softness factor	t_rr/Q_rr = 65 ns/μC - limits voltage overshoot and EMI during reverse recovery

Applications

Industrial SMPS	PFC Front-End
Use Scenario: Primary-side switch in 300–500 W open-frame AC/DC power supplies for factory automation controllers. IC Role / Device Role / Timing Role: High-voltage switching element in LLC resonant half-bridge, operating at 100 kHz with ZVS. Use Value: Low Q_g and R_DS(on) reduce total power loss by 12 % vs. legacy 650 V MOSFETs, improving thermal margin at 60 °C ambient.	Use Scenario: Boost switch in active PFC stage of 1 kW telecom rectifier with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Critical conduction mode (CRM) boost switch handling peak currents up to 21 A. Use Value: Avalanche rating and low C_oss enable reliable operation under line surge and load transient conditions without derating.
HID Lighting Ballast	ATX Power Supply
Use Scenario: Half-bridge switching device in electronic ballast for 70 W metal halide lamps. IC Role / Device Role / Timing Role: High-side/low-side switch in 50–70 kHz square-wave inverter driving lamp arc. Use Value: Tight V_GS(th) range (2–4 V) ensures consistent turn-on timing across temperature, minimizing lamp ignition failure.	Use Scenario: Main switch in +3.3 V/5 V/12 V multi-rail ATX PSU main converter (forward or LLC topology). IC Role / Device Role / Timing Role: Primary-side power switch delivering up to 8 A continuous output per rail. Use Value: TO-220 FULLPAK package provides mechanical robustness and thermal stability during sustained 100 % load testing.

Industrial SMPS

PFC Front-End

Use Scenario: Primary-side switch in 300–500 W open-frame AC/DC power supplies for factory automation controllers.

IC Role / Device Role / Timing Role: High-voltage switching element in LLC resonant half-bridge, operating at 100 kHz with ZVS.

Use Value: Low Q_g and R_DS(on) reduce total power loss by 12 % vs. legacy 650 V MOSFETs, improving thermal margin at 60 °C ambient.

Use Scenario: Boost switch in active PFC stage of 1 kW telecom rectifier with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) boost switch handling peak currents up to 21 A.

Use Value: Avalanche rating and low C_oss enable reliable operation under line surge and load transient conditions without derating.

HID Lighting Ballast

ATX Power Supply

Use Scenario: Half-bridge switching device in electronic ballast for 70 W metal halide lamps.

IC Role / Device Role / Timing Role: High-side/low-side switch in 50–70 kHz square-wave inverter driving lamp arc.

Use Value: Tight V_GS(th) range (2–4 V) ensures consistent turn-on timing across temperature, minimizing lamp ignition failure.

Use Scenario: Main switch in +3.3 V/5 V/12 V multi-rail ATX PSU main converter (forward or LLC topology).

IC Role / Device Role / Timing Role: Primary-side power switch delivering up to 8 A continuous output per rail.

Use Value: TO-220 FULLPAK package provides mechanical robustness and thermal stability during sustained 100 % load testing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK60ZFP	600 V, 10 A, R_DS(on) = 0.65 Ω, Q_g = 45 nC, TO-220FP package	Higher R_DS(on) increases conduction loss; lower Q_g eases gate drive but lacks UIS rating	Prefer for cost-sensitive, lower-power (<200 W) applications where avalanche stress is absent
IXTH12N60L2	600 V, 12 A, R_DS(on) = 0.55 Ω, Q_g = 42 nC, TO-247 package	Higher current rating but larger footprint and no FULLPAK thermal enhancement	Choose when higher peak current capability is required and board space permits TO-247 mounting

Compared with STP10NK60ZFP and IXTH12N60L2, SIHA22N60E-E3 offers superior thermal performance per unit area due to FULLPAK construction, lower R_DS(on), and guaranteed avalanche capability - making it preferred for compact, high-reliability 300–500 W industrial power designs.

Availability

SIHA22N60E-E3 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, PFC front-ends, and HID lighting ballasts requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIHA22N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIHA22N60E-E3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered specifically for high-efficiency, high-reliability AC/DC conversion in industrial, lighting, and computing power systems.

FAQ

What is the maximum continuous drain current rating for SIHA22N60E-E3 at 100 °C case temperature?

The SIHA22N60E-E3 has a continuous drain current rating of 5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 8 A rating at 25 °C case temperature, based on a linear derating factor of 0.28 W/°C and R_thJC = 3.6 °C/W. Designers must ensure heatsink design maintains case temperature ≤100 °C under full load to sustain this current in SIHA22N60E-E3 applications.

Does SIHA22N60E-E3 have an avalanche-rated specification, and how is it tested?

Yes, SIHA22N60E-E3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 367 mJ. Per Vishay test condition b, this is measured at V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.1 A. The rating confirms SIHA22N60E-E3 can safely absorb inductive energy without failure - a key differentiator versus non-avalanche-rated 600 V MOSFETs.

What is the gate threshold voltage range for SIHA22N60E-E3, and why does it matter for drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SIHA22N60E-E3 is specified from 2 V to 4 V at T_J = 25 °C. This tight range ensures predictable turn-on behavior across production lots and simplifies gate driver selection - especially important in PFC and SMPS where precise timing affects efficiency and EMI. Driving SIHA22N60E-E3 with ≥10 V ensures full enhancement and minimal R_DS(on), while avoiding overvoltage beyond ±30 V absolute maximum.

How does the Thin-Lead TO-220 FULLPAK package of SIHA22N60E-E3 improve thermal performance over standard TO-220?

The Thin-Lead TO-220 FULLPAK package used in SIHA22N60E-E3 features a reduced leadframe thickness and extended copper tab that enhances thermal coupling to the PCB and heatsink. Its R_thJC is rated at 3.6 °C/W (max), significantly lower than standard TO-220 (typically >4.5 °C/W). This allows SIHA22N60E-E3 to dissipate 35 W more efficiently and maintain lower junction temperatures under identical operating conditions - critical for long-term reliability in enclosed industrial power supplies.

Can SIHA22N60E-E3 be used in place of logic-level MOSFETs in 5 V gate drive applications?

No, SIHA22N60E-E3 is not a logic-level MOSFET. Its V_GS(th) starts at 2 V but requires V_GS = 10 V to achieve R_DS(on) ≤ 0.18 Ω. At 5 V gate drive, SIHA22N60E-E3 operates in the linear region with significantly elevated R_DS(on) (>1 Ω), causing excessive conduction loss and thermal runaway. It must be driven with a dedicated 10–15 V gate driver - unlike true logic-level devices such as SiHF20N60E, which specify R_DS(on) at V_GS = 5 V.

SIHA22N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1920 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA22N60E-E3 FAQ

1.How can I place an order for SIHA22N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA22N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA22N60E-E3 reliable?

The price and inventory of SIHA22N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA22N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHA22N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA22N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA22N60E-E3?

SIHA22N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA22N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA22N60E-E3?

For technical support, including SIHA22N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA22N60E-E3 requirements.

6.How does Aetrix verify that SIHA22N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHA22N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA22N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHA22N60E-E3?

All SIHA22N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA22N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA22N60E-E3 part is unused and in its original packaging.

Return procedure for SIHA22N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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