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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA22N60EF-GE3

Name: SIHA22N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHA22N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA22N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA22N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 19A TO220

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Product details

Overview

SIHA22N60EF-GE3 from Vishay Siliconix is a 600 V, 19 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.158 Ω (typ. at V_GS = 10 V), Q_g = 48 nC (typ.), and ultra-fast body diode with t_rr = 113 ns (typ.). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHA22N60EF-GE3 datasheet, SIHA22N60EF-GE3 pinout, SIHA22N60EF-GE3 application, or SIHA22N60EF-GE3 equivalent, this device is selected for its avalanche-rated ruggedness (E_AS = 144 mJ), fast dv/dt capability (70 V/ns), and optimized FOM (R_DS(on) × Q_g) for hard-switched 600 V topologies.

Technical Context

This MOSFET employs planar silicon technology with an integrated fast-recovery body diode engineered for reduced Q_rr (0.7 μC typ.) and low V_SD (1.2 V typ. at I_S = 11 A). Its gate charge profile supports precise timing control in critical ZVS/ZCS transitions.

The device operates across -55 °C to +150 °C junction temperature range, with R_thJC = 3.8 °C/W enabling high-power density designs. Its 600 V V_DS rating and ±30 V V_GS tolerance support robust gate drive design in noisy industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports primary-side switching in universal-input 600 V-class PFC and LLC resonant converters.
R_DS(on) typ. @ 10 V	0.158 Ω - Enables <1.9 W conduction loss at 11 A DC, reducing heatsink requirements in compact 1–3 kW supplies.
Q_g typ.	48 nC - Low gate charge reduces driver power demand and enables use of cost-effective 1-A gate drivers.
t_rr typ.	113 ns - Fast body diode recovery minimizes switching node ringing and EMI in bridge-leg configurations.
E_AS	144 mJ - Rated unclamped inductive switching energy allows reliable operation under transient overloads without snubbers.
C_iss typ.	1423 pF - Low input capacitance improves Miller immunity and simplifies gate drive stability compensation.
R_thJC	3.8 °C/W - Enables >25 W continuous dissipation with standard TO-220 heatsinking, supporting high-current single-device solutions.

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead-free/halogen-free); dimensions per Vishay Doc. #62649: D = 8.3–8.7 mm, d1 = 14.7–15.3 mm, L = 13.4–13.8 mm, ØP = 3.0–3.4 mm.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path from source to load	Internally connected to metal tab - must be electrically isolated from heatsink unless system ground referenced.
Source (S)	Return path for load current; reference for gate drive	Low-inductance connection critical for minimizing V_GS noise during fast switching; tied to PCB ground plane.
Gate (G)	Control terminal for channel conduction	High-impedance input requiring <1 μA leakage; sensitive to ESD - requires series gate resistor (9.1 Ω typical) and TVS protection.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	7.6 Ω·nC - Directly correlates to reduced total switching + conduction loss in hard-switched topologies.
Avalanche energy rated (UIS)	144 mJ single-pulse - Eliminates need for external clamping in inductive load transients like motor drives or PFC boost chokes.
Fast body diode (t_rr, Q_rr)	113 ns / 0.7 μC - Reduces reverse recovery stress on complementary switch and lowers di/dt-induced EMI.
Ultra-low C_iss	1423 pF - Enables stable operation with minimal gate drive loop inductance and reduces Miller-induced false turn-on risk.
Thin-Lead TO-220 FULLPAK	Reduced lead inductance vs. standard TO-220 - Improves high-frequency switching fidelity and thermal transfer to heatsink.

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost PFC converter operating at 100 kHz in 1U 2 kW AC/DC front-end. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; handles full line-input current. Use Value: Low R_DS(on) and fast body diode reduce conduction loss and recovery loss, achieving >96% PFC efficiency at full load.	Use Scenario: Primary-side switch in phase-shifted full-bridge DC/DC converter for 48 V telecom rectifiers. IC Role / Device Role / Timing Role: High-side switch subjected to ZVS transitions; body diode conducts during dead-time. Use Value: Low Q_rr and controlled dv/dt (70 V/ns) minimize voltage overshoot and EMI during soft-switching transitions.
Solar PV Inverter Boost Stage	Industrial Motor Drive Inverter Leg
Use Scenario: DC-DC boost stage stepping up PV array output (200–1000 V) before inverter stage. IC Role / Device Role / Timing Role: High-voltage switch handling variable DC input; subject to repetitive UIS events during MPPT transients. Use Value: 144 mJ E_AS rating ensures reliable operation during rapid irradiance changes without derating.	Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverter driving 5–10 kW induction motors. IC Role / Device Role / Timing Role: Switching element in inverter leg; body diode freewheels reactive motor current during PWM off-time. Use Value: Fast t_rr and low V_SD reduce freewheeling loss and prevent shoot-through risk due to slow diode recovery.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC converter operating at 100 kHz in 1U 2 kW AC/DC front-end.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; handles full line-input current.

Use Value: Low R_DS(on) and fast body diode reduce conduction loss and recovery loss, achieving >96% PFC efficiency at full load.

Use Scenario: Primary-side switch in phase-shifted full-bridge DC/DC converter for 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: High-side switch subjected to ZVS transitions; body diode conducts during dead-time.

Use Value: Low Q_rr and controlled dv/dt (70 V/ns) minimize voltage overshoot and EMI during soft-switching transitions.

Solar PV Inverter Boost Stage

Industrial Motor Drive Inverter Leg

Use Scenario: DC-DC boost stage stepping up PV array output (200–1000 V) before inverter stage.

IC Role / Device Role / Timing Role: High-voltage switch handling variable DC input; subject to repetitive UIS events during MPPT transients.

Use Value: 144 mJ E_AS rating ensures reliable operation during rapid irradiance changes without derating.

Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverter driving 5–10 kW induction motors.

IC Role / Device Role / Timing Role: Switching element in inverter leg; body diode freewheels reactive motor current during PWM off-time.

Use Value: Fast t_rr and low V_SD reduce freewheeling loss and prevent shoot-through risk due to slow diode recovery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK60Z	600 V, 20 A, R_DS(on) = 0.22 Ω, Q_g = 65 nC, no specified t_rr or E_AS rating	Lacks avalanche rating and fast-body-diode specs; requires external snubber in inductive loads	Lower cost but higher conduction loss and less rugged in transient conditions than SIHA22N60EF-GE3
IXTH20N60L2	600 V, 20 A, R_DS(on) = 0.20 Ω, Q_g = 42 nC, t_rr = 140 ns, E_AS = 120 mJ	Higher R_DS(on) and longer t_rr; lower E_AS margin than SIHA22N60EF-GE3	Better gate charge but inferior conduction and ruggedness performance; suitable where lower peak current dominates

Compared with STW20NK60Z and IXTH20N60L2, SIHA22N60EF-GE3 offers the lowest R_DS(on) × Q_g FOM and highest E_AS rating among these 600 V alternatives, making it optimal for high-efficiency, high-reliability PFC and inverter legs where both conduction loss and transient robustness are critical.

Availability

SIHA22N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHA22N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The EF Series power MOSFETs are designed specifically for high-frequency, high-efficiency switch-mode power conversion in server, telecom, and renewable energy systems where low FOM and fast body diode recovery are essential.

FAQ

What is the maximum continuous drain current for SIHA22N60EF-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHA22N60EF-GE3 is 12 A when the case temperature (T_C) is 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within its R_thJC = 3.8 °C/W thermal resistance. SIHA22N60EF-GE3 maintains stable R_DS(on) performance across this range due to its positive V_DS temperature coefficient.

Does SIHA22N60EF-GE3 have a specified avalanche energy rating?

Yes, SIHA22N60EF-GE3 is rated for single-pulse unclamped inductive switching (UIS) with E_AS = 144 mJ under test conditions of V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.2 A. This rating is explicitly documented in the Absolute Maximum Ratings section and confirms ruggedness for transient overload conditions without external clamping. SIHA22N60EF-GE3 leverages this specification in PFC and motor drive applications.

What is the typical reverse recovery time (t_rr) of the body diode in SIHA22N60EF-GE3?

The typical reverse recovery time (t_rr) of the integral body diode in SIHA22N60EF-GE3 is 113 ns, measured at T_J = 25 °C, I_F = I_S = 11 A, di/dt = 100 A/μs, and V_R = 400 V. This value is confirmed in the Drain-Source Body Diode Characteristics table and supports low-loss freewheeling in bridge-leg topologies. SIHA22N60EF-GE3 achieves this performance via optimized epitaxial layer design and fast carrier recombination.

Is SIHA22N60EF-GE3 compatible with standard TO-220 heatsinks?

Yes, SIHA22N60EF-GE3 uses the Thin-Lead TO-220 FULLPAK package with mechanical dimensions fully compatible with standard TO-220 mounting hardware and heatsinks, including M3 screw torque specification of 0.6 Nm. The metal tab is the Drain terminal and must be electrically isolated unless system grounding permits direct attachment. SIHA22N60EF-GE3 benefits from the package's improved thermal transfer versus conventional TO-220 due to thinner leads and enhanced die-to-tab interface.

What gate-source voltage range is safe for continuous operation of SIHA22N60EF-GE3?

The safe continuous gate-source voltage range for SIHA22N60EF-GE3 is ±30 V, as defined in the Absolute Maximum Ratings. Operation at V_GS = 10 V ensures full enhancement with R_DS(on) = 0.158 Ω (typ.), while V_GS(th) ranges from 2.0 V to 4.0 V. Exceeding ±30 V risks permanent gate oxide damage. SIHA22N60EF-GE3 gate drive circuits must include clamping (e.g., 15 V Zener) and series resistance to limit peak current during fast transitions.

SIHA22N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 182mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1423 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA22N60EF-GE3 FAQ

1.How can I place an order for SIHA22N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA22N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA22N60EF-GE3 reliable?

The price and inventory of SIHA22N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA22N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA22N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA22N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA22N60EF-GE3?

SIHA22N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA22N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA22N60EF-GE3?

For technical support, including SIHA22N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA22N60EF-GE3 requirements.

6.How does Aetrix verify that SIHA22N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA22N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA22N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA22N60EF-GE3?

All SIHA22N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA22N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA22N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHA22N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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