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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA22N60E-GE3

Name: SIHA22N60E-GE3
Brand: Vishay Siliconix
SKU: SIHA22N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA22N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA22N60E-GE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA22N60E-GE3 from Vishay Siliconix is a 600 V, 8 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.18 Ω (max) at V_GS = 10 V, Q_g = 86 nC (max), and avalanche-rated (E_AS = 367 mJ). It delivers low conduction and switching losses for high-efficiency SMPS and PFC stages in industrial and consumer power supplies.

For engineers reviewing the SIHA22N60E-GE3 datasheet, SIHA22N60E-GE3 pinout, SIHA22N60E-GE3 application, or SIHA22N60E-GE3 equivalent, key selection criteria include its 600 V blocking voltage, 0.15 Ω typical R_DS(on), ultra-low gate charge, UIS ruggedness, and thermal resistance of 3.6 °C/W (junction-to-case), critical for thermally constrained 50–100 W offline converters.

Technical Context

This MOSFET employs planar silicon technology optimized for hard-switched, high-voltage DC-DC and AC-DC topologies. Its low C_iss (1920 pF typ) and minimized Q_gd/Q_g ratio (24/86 nC) reduce Miller-induced turn-off delay and improve controllability under high dV/dt conditions up to 70 V/ns.

The integrated body diode supports synchronous rectification and freewheeling in flyback and LLC resonant converters, with t_rr = 344 ns (typ), Q_rr = 5.3 μC, and V_SD = 1.2 V (at I_S = 11 A, T_J = 25 °C), enabling predictable recovery behavior in discontinuous conduction mode.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports universal-input (85–265 V_AC) offline designs with ≥2× safety margin over 480 V DC bus.
R_DS(on) max @ 10 V	0.18 Ω - Enables ≤1.8 W conduction loss at 10 A RMS in PFC boost stage at 100 °C case temperature.
Q_g max	86 nC - Reduces gate drive power requirement and allows use of low-cost 1–2 W drivers in 65–100 kHz SMPS.
E_AS	367 mJ - Withstands unclamped inductive switching events without failure, eliminating need for external snubbers in flyback designs.
R_thJC	3.6 °C/W - Enables 35 W continuous dissipation with ≤125 °C junction rise above 25 °C case, supporting compact heatsink integration.
C_iss	1920 pF typ - Low input capacitance improves high-frequency gate drive efficiency and reduces EMI filter burden.
V_GS(th)	2–4 V - Ensures reliable turn-on with standard 10 V gate drivers while avoiding spurious conduction from noise.

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead-free and halogen-free), with drain-connected tab for direct heatsinking and mechanical mounting via M3 screw (0.6 Nm torque).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-side power switch node	Electrically connected to metal tab; must be isolated from chassis unless system ground-referenced; primary thermal path to heatsink.
Gate	Control input	Low-impedance MOS gate requiring <100 nC charge; sensitive to ESD; requires gate resistor (R_g = 4.7 Ω typical) for controlled switching.
Source	Power return / reference node	Common return for gate drive and load current; forms source-follower reference for bootstrap gate drivers in half-bridge configurations.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	15.5 Ω·nC (0.18 Ω × 86 nC) - Directly improves trade-off between conduction and switching loss in fixed-frequency converters.
Avalanche energy rating (UIS)	367 mJ - Guarantees single-pulse robustness during startup, overload, or transformer saturation without derating.
Ultra-low Q_gd	24 nC - Minimizes Miller plateau duration, reducing cross-conduction risk and improving hard-switching timing predictability.
Low C_oss (energy-related)	73 pF (Co_er) - Reduces turn-off energy loss (E_off ∝ C_oss × V_DS²), critical for >60 kHz operation.
Body diode softness (Q_rr/I_RRM)	5.3 μC / 28 A = 0.19 μs - Predictable reverse recovery minimizes voltage overshoot and ringing in flyback snubberless designs.

Applications

Industrial SMPS	PFC Front-End
Use Scenario: 75 W open-frame power supply for factory automation controllers operating at 65 kHz with 230 V_AC input. IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant flyback topology, handling full DC bus voltage and delivering regulated 24 V output. Use Value: 600 V rating and 367 mJ UIS withstand surge transients on unregulated mains; 0.15 Ω R_DS(on) keeps conduction loss below 1.5 W at full load.	Use Scenario: Active boost PFC stage in 150 W LED driver for street lighting with THD < 10 %. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter, switching at 65–100 kHz. Use Value: Low Q_g (57 nC typ) enables efficient gate driving with minimal driver loss; low C_iss ensures stable loop response across line/load variations.
Consumer TV Power Supply	Gaming Console Adapter
Use Scenario: Main power switch in 120 W dual-output (12 V/19 V) adapter for 4K UHD television with standby < 0.5 W. IC Role / Device Role / Timing Role: Primary MOSFET in asymmetric half-bridge forward converter, operating in burst mode at light load. Use Value: 150 °C max junction temperature and low IDSS (<1 μA at 600 V) ensure low standby leakage and long-term reliability under thermal cycling.	Use Scenario: High-efficiency 90 W USB-C PD adapter for gaming console docking station with 20 V/4.5 A output. IC Role / Device Role / Timing Role: Synchronous rectifier control switch in secondary-side active clamp forward configuration. Use Value: Fast body diode (t_rr = 344 ns) and low V_SD (1.2 V) reduce dead-time losses and improve light-load efficiency beyond 89 %.

Industrial SMPS

PFC Front-End

Use Scenario: 75 W open-frame power supply for factory automation controllers operating at 65 kHz with 230 V_AC input.

IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant flyback topology, handling full DC bus voltage and delivering regulated 24 V output.

Use Value: 600 V rating and 367 mJ UIS withstand surge transients on unregulated mains; 0.15 Ω R_DS(on) keeps conduction loss below 1.5 W at full load.

Use Scenario: Active boost PFC stage in 150 W LED driver for street lighting with THD < 10 %.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter, switching at 65–100 kHz.

Use Value: Low Q_g (57 nC typ) enables efficient gate driving with minimal driver loss; low C_iss ensures stable loop response across line/load variations.

Consumer TV Power Supply

Gaming Console Adapter

Use Scenario: Main power switch in 120 W dual-output (12 V/19 V) adapter for 4K UHD television with standby < 0.5 W.

IC Role / Device Role / Timing Role: Primary MOSFET in asymmetric half-bridge forward converter, operating in burst mode at light load.

Use Value: 150 °C max junction temperature and low IDSS (<1 μA at 600 V) ensure low standby leakage and long-term reliability under thermal cycling.

Use Scenario: High-efficiency 90 W USB-C PD adapter for gaming console docking station with 20 V/4.5 A output.

IC Role / Device Role / Timing Role: Synchronous rectifier control switch in secondary-side active clamp forward configuration.

Use Value: Fast body diode (t_rr = 344 ns) and low V_SD (1.2 V) reduce dead-time losses and improve light-load efficiency beyond 89 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60FD	600 V, 17 A, R_DS(on) = 0.30 Ω, Q_g = 45 nC, TO-220FP package	Higher R_DS(on) increases conduction loss; lower Q_g eases gate drive but lacks UIS rating	Prefer for cost-sensitive, lower-current (<8 A) designs where avalanche ruggedness is not required.
IXTH24N60L2	600 V, 24 A, R_DS(on) = 0.22 Ω, Q_g = 105 nC, TO-247 package	Higher current rating and larger package; higher Q_g demands stronger gate driver; same V_DS and UIS spec	Choose when >15 A peak current or enhanced thermal margin (R_thJC = 1.5 °C/W) is needed; requires PCB layout change.

Compared with STP20NM60FD and IXTH24N60L2, SIHA22N60E-GE3 offers optimal balance of low R_DS(on), moderate Q_g, and guaranteed UIS performance in a compact TO-220 FULLPAK, making it ideal for space-constrained 50–100 W industrial and consumer power stages where reliability under transient stress is mandatory.

Availability

SIHA22N60E-GE3 is available at Aetrix Electronics and suitable for switch mode power supplies (SMPS), power factor correction (PFC) circuits, and high-intensity discharge (HID) lighting ballasts requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHA22N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and power efficiency.

The E Series Power MOSFETs, including SIHA22N60E-GE3, are engineered for high-voltage, medium-power switching in offline AC-DC and DC-DC conversion, prioritizing low FOM, avalanche capability, and thermal reliability in industrial and consumer power systems.

FAQ

What is the maximum continuous drain current rating for SIHA22N60E-GE3 at 100 °C case temperature?

The SIHA22N60E-GE3 has a continuous drain current rating of 5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 8 A rating at 25 °C, based on a linear derating factor of 0.28 W/°C and R_thJC = 3.6 °C/W. Designers must verify junction temperature using actual board-level thermal resistance to ensure safe operation within the -55 to +150 °C range.

Does SIHA22N60E-GE3 support gate drive with 5 V logic-level signals?

No, SIHA22N60E-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, but it requires V_GS = 10 V to achieve the specified R_DS(on) of 0.18 Ω max. Driving SIHA22N60E-GE3 with only 5 V will result in significantly higher on-resistance and excessive conduction loss. A dedicated 10–15 V gate driver is required for full performance.

Is SIHA22N60E-GE3 suitable for use in zero-voltage switching (ZVS) resonant converters?

Yes, SIHA22N60E-GE3 is well-suited for ZVS applications such as LLC resonant converters due to its low C_oss (90 pF typ), low Q_gd (24 nC), and fast body diode (t_rr = 344 ns). These parameters minimize capacitive turn-on loss and enable reliable body-diode commutation during resonant transitions. However, designers must confirm ZVS boundary conditions using actual circuit parasitics and operating frequency.

What is the avalanche energy rating of SIHA22N60E-GE3 and how is it tested?

The SIHA22N60E-GE3 is rated for single-pulse unclamped inductive switching (UIS) with E_AS = 367 mJ. This is measured per JEDEC standard JESD24-11 using V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.1 A. The rating guarantees robustness against inductive kickback during fault conditions without requiring external clamping components.

How does the TO-220 FULLPAK package of SIHA22N60E-GE3 differ from standard TO-220?

The TO-220 FULLPAK package used by SIHA22N60E-GE3 features thinner leads and an extended molded body that fully encapsulates the die and bond wires, improving mechanical robustness and moisture resistance. Unlike standard TO-220, the FULLPAK variant positions the drain tab flush with the package base for improved heatsink contact and eliminates lead-frame exposure, enhancing long-term reliability in humid or vibration-prone environments.

SIHA22N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EL

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1920 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA22N60E-GE3 FAQ

1.How can I place an order for SIHA22N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA22N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA22N60E-GE3 reliable?

The price and inventory of SIHA22N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA22N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA22N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA22N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA22N60E-GE3?

SIHA22N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA22N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA22N60E-GE3?

For technical support, including SIHA22N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA22N60E-GE3 requirements.

6.How does Aetrix verify that SIHA22N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA22N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA22N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA22N60E-GE3?

All SIHA22N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA22N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA22N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHA22N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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