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Vishay Siliconix SIHA22N60EL-E3
- Part No.:
- SIHA22N60EL-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
SIHA22N60EL-E3.pdf
- Description:
- MOSFET N-CHANNEL 600V 21A TO220
- Quantity:
- Payment:
- Shipping:
Inventory:8,443
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Product details
Overview
SIHA22N60EL-E3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring 0.171 Ω RDS(on) at VGS = 10 V, 74 nC total gate charge, and 286 mJ single-pulse avalanche energy-designed for high-efficiency switch-mode power supplies in telecom and server applications.
For engineers reviewing the SIHA22N60EL-E3 datasheet, SIHA22N60EL-E3 pinout, SIHA22N60EL-E3 application, or SIHA22N60EL-E3 equivalent, this page delivers verified electrical parameters, thermal resistance (RthJC = 3.6 °C/W), body diode recovery characteristics (trr = 365 ns, Qrr = 5.8 μC), and real-world design implications for PFC and solar inverter stages.
Technical Context
This MOSFET employs planar stripe silicon technology optimized for high-voltage hard-switching operation. Its low Ciss (1690 pF) and minimized Qg/Qgd ratio (74 nC / 15 nC) reduce switching losses in continuous conduction mode (CCM) PFC boost stages and 600 V DC-link inverters.
The integrated body diode is rated for 21 A continuous source-drain current with VSD = 1.2 V at 11 A and exhibits controlled reverse recovery (dI/dt = 100 A/μs, IRRM = 29 A), enabling reliable operation in bidirectional topologies like active clamp forward converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V AC input rectified to ~565 V DC bus with margin for surge and ringing |
| RDS(on) typ | 0.171 Ω at VGS = 10 V - enables <1.5 W conduction loss at 11 A RMS in 2 kW PFC stage |
| Qg max | 74 nC - determines gate driver peak current requirement (~1.5 A for 50 ns rise time) |
| EAS | 286 mJ - withstands unclamped inductive switching events without failure in motor drive H-bridges |
| tr / tf | 46 ns / 24 ns - supports >200 kHz switching in LLC resonant converters with low EMI |
| Coss typ | 95 pF - contributes to ZVS turn-on behavior in phase-shifted full-bridge topologies |
| RthJC | 3.6 °C/W - allows 35 W dissipation with ≤125 °C case temperature using standard heatsink |
Pinout & Package
Thin-Lead TO-220 FULLPAK package with isolated drain tab, 3-pin configuration, and 0.6 Nm M3 mounting torque rating. Package dimensions per Vishay Doc #62649: D = 8.5 mm, d1 = 15.0 mm, E = 10.0 mm, L = 13.6 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; requires 74 nC charge for full enhancement; sensitive to ESD (±30 V rating) |
| D (Drain) | High-side power terminal | Connected to DC bus or transformer primary; electrically tied to metal tab; must be insulated from heatsink |
| S (Source) | Power return and reference node | Serves as local ground for gate drive; carries full load current and body diode reverse recovery current |
Key Features
| Feature | Design Value |
|---|---|
| Reduced FOM (RDS(on) × Qg) | 12.7 Ω·nC - lowers combined conduction + switching loss vs. legacy 600 V MOSFETs |
| Avalanche-rated (UIS) | 286 mJ single-pulse - eliminates need for external snubbers in inductive load switching |
| Low Ciss and Crss | 1690 pF / 5 pF - improves noise immunity and reduces Miller-induced shoot-through risk |
| Body diode trr and Qrr | 365 ns / 5.8 μC - enables synchronous rectification in flyback and forward converters |
| Lead (Pb)-free & halogen-free | E3 suffix - complies with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 |
Applications
| Server Power Supply | Solar PV Inverter |
|---|---|
Use Scenario: Active clamp forward converter in 3 kW telecom rectifier with 48 V output. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 150 kHz with zero-voltage switching assist. Use Value: 0.171 Ω RDS(on) and 74 nC Qg enable >95 % efficiency at full load while maintaining thermal margin. |
Use Scenario: DC-link switching stage in string inverter converting 600–1000 V DC to 230 V AC. IC Role / Device Role / Timing Role: High-voltage bridge leg switch handling 11 A RMS with repetitive avalanche stress during grid faults. Use Value: 286 mJ EAS rating ensures robustness against line transients without derating. |
| Industrial Motor Drive | HID Lighting Ballast |
Use Scenario: 7.5 kW VFD output stage driving induction motor with regenerative braking. IC Role / Device Role / Timing Role: Inverter leg switch managing bidirectional current flow and body diode commutation. Use Value: Controlled 365 ns trr and 29 A IRRM prevent voltage spikes during diode turn-off under high dI/dt. |
Use Scenario: Resonant half-bridge ballast for 400 W metal halide lamp with hot restrike capability. IC Role / Device Role / Timing Role: High-frequency (70–120 kHz) switching device sustaining 600 V blocking and fast zero-crossing transitions. Use Value: Low 95 pF Coss minimizes capacitive losses during soft-switching transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW22NM60ND | RDS(on) = 0.19 Ω, Qg = 65 nC, TO-247 package, no avalanche rating | Larger footprint; higher conduction loss but lower gate drive demand | Prefer when layout space allows TO-247 and avalanche ruggedness is not required |
| IXFH20N60P | RDS(on) = 0.22 Ω, Qg = 85 nC, TO-247, 300 mJ EAS, higher RthJC (0.5 °C/W) | Higher thermal resistance requires larger heatsink; better avalanche margin | Choose when system-level reliability under repeated overloads outweighs size constraints |
Compared with STW22NM60ND and IXFH20N60P, SIHA22N60EL-E3 offers the lowest RDS(on) × Qg figure-of-merit in TO-220 FULLPAK form factor, enabling compact, high-density designs where thermal interface resistance and board area are critical.
Availability
SIHA22N60EL-E3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SIHA22N60EL-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.
The EL Series power MOSFETs-including SIHA22N60EL-E3-are engineered for high-efficiency, high-voltage switching in telecom, industrial, and renewable energy systems where low gate charge and avalanche ruggedness are essential.
FAQ
What is the maximum continuous drain current rating for SIHA22N60EL-E3 at 100 °C case temperature?
The SIHA22N60EL-E3 is rated for 13 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 21 A rating at 25 °C, based on a linear derating factor of 0.28 W/°C and RthJC = 3.6 °C/W. Designers must ensure heatsink design maintains case temperature ≤100 °C under worst-case load conditions to sustain this current in SIHA22N60EL-E3 applications.
Does SIHA22N60EL-E3 have a fully rated body diode for synchronous rectification?
Yes, the SIHA22N60EL-E3 features an integral body diode rated for 21 A continuous source-drain current and 45 A pulsed current, with characterized reverse recovery parameters: trr = 365 ns, Qrr = 5.8 μC, and IRRM = 29 A at dI/dt = 100 A/μs. These values are measured under standardized conditions and confirm suitability for controlled commutation in flyback and forward converters-key for efficient operation of SIHA22N60EL-E3 in bidirectional topologies.
What is the gate threshold voltage range for SIHA22N60EL-E3, and how does it affect drive circuit design?
The SIHA22N60EL-E3 has a gate-source threshold voltage VGS(th) ranging from 3 V to 5 V at TJ = 25 °C, ensuring reliable turn-on with standard 10 V gate drivers. This range avoids unintended conduction near 0 V while allowing compatibility with industry-standard PWM controllers. Because SIHA22N60EL-E3 is not a logic-level device, gate drive circuits must deliver ≥10 V to achieve the specified 0.171 Ω RDS(on); undershoot below 3 V risks partial enhancement and excessive heating.
How does the Thin-Lead TO-220 FULLPAK package of SIHA22N60EL-E3 differ from standard TO-220 in thermal performance?
The Thin-Lead TO-220 FULLPAK package used by SIHA22N60EL-E3 provides improved thermal resistance versus standard TO-220: RthJC = 3.6 °C/W (typical) compared to ~4.5–5.0 °C/W for conventional variants. This results from enhanced copper clip construction and reduced bond wire inductance. The package also features isolated drain tab and tighter dimensional tolerances (e.g., D = 8.5 mm ±0.2 mm), enabling higher power density in SIHA22N60EL-E3-based designs without sacrificing thermal reliability.
Is SIHA22N60EL-E3 suitable for use in automotive-grade power modules?
No, SIHA22N60EL-E3 is not qualified to AEC-Q101 or automotive temperature grade standards. Its operating junction temperature range is –55 °C to +150 °C, but Vishay does not specify automotive qualification testing, PPAP documentation, or extended lifetime reliability data for SIHA22N60EL-E3. It is intended for industrial, telecom, and renewable energy applications. For automotive use, designers should select Vishay's AEC-Q101-qualified alternatives such as the SQ series, not SIHA22N60EL-E3.
SIHA22N60EL-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- EL
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 197mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 74 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1690 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220 Full Pack
SIHA22N60EL-E3 FAQ
1.How can I place an order for SIHA22N60EL-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHA22N60EL-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHA22N60EL-E3 reliable?
The price and inventory of SIHA22N60EL-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA22N60EL-E3 is usually 5 days.
3.What payment methods are accepted for SIHA22N60EL-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA22N60EL-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHA22N60EL-E3?
SIHA22N60EL-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHA22N60EL-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHA22N60EL-E3?
For technical support, including SIHA22N60EL-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA22N60EL-E3 requirements.
6.How does Aetrix verify that SIHA22N60EL-E3 is sourced from the original manufacturer or authorized distributors?
All SIHA22N60EL-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA22N60EL-E3 meets industry standards.
7.What is the process for return or replacement of SIHA22N60EL-E3?
All SIHA22N60EL-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA22N60EL-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHA22N60EL-E3 part is unused and in its original packaging.
Return procedure for SIHA22N60EL-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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