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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA22N60EL-GE3

Name: SIHA22N60EL-GE3
Brand: Vishay Siliconix
SKU: SIHA22N60EL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA22N60EL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA22N60EL-GE3.pdf

Description:: N-CHANNEL600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA22N60EL-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring 0.171 Ω R_DS(on) at V_GS = 10 V, 74 nC total gate charge, and 286 mJ single-pulse avalanche energy-designed for high-efficiency switch-mode power supplies in telecom and server applications.

For engineers reviewing the SIHA22N60EL-GE3 datasheet, SIHA22N60EL-GE3 pinout, SIHA22N60EL-GE3 application, or SIHA22N60EL-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), robust UIS rating, and optimized dynamic parameters for hard-switched PFC and DC-DC stages requiring reliable 600 V blocking capability.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to reduce conduction and switching losses simultaneously. Its 1690 pF input capacitance (C_iss) and low 5 pF reverse transfer capacitance (C_rss) support fast, controllable turn-on/turn-off transitions under 480 V bus conditions.

The integrated body diode exhibits 365 ns reverse recovery time (t_rr) and 5.8 μC Q_rr at 11 A, enabling stable operation in continuous conduction mode (CCM) PFC without external diode snubbing in many designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified to ~565 V DC bus with margin for transients
R_DS(on) typ	0.171 Ω at V_GS = 10 V - enables ≤3.9 W conduction loss at 11 A RMS in PFC boost stage
Q_g max	74 nC - determines gate driver current requirement (~1.5 A peak for 50 ns rise time)
E_AS	286 mJ - ensures ruggedness against unclamped inductive switching events in motor drives or SMPS
C_iss	1690 pF - sets Miller effect magnitude and influences V_GS stability during dV/dt transitions
t_rr	365 ns - defines minimum dead-time needed to avoid shoot-through in half-bridge topologies
R_thJC	3.6 °C/W - allows 35 W dissipation with ≤126 °C junction rise above 25 °C case temperature

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead-free and halogen-free); thermally enhanced plastic package with exposed drain tab on underside for direct heatsink mounting; 3-pin configuration with G–D–S pin order viewed from front (tab side down).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 15 nC gate-source charge requires low-impedance driver path
D (Drain)	High-side power terminal	Connected to heatsink via exposed metal tab; carries full load current and withstands 600 V transient stress
S (Source)	Reference and return path	Common node for gate drive return and current sensing; low-inductance layout critical for EMI control

Key Features

Feature	Design Value
Reduced R_DS(on) × Q_g FOM	12.7 Ω·nC - lowers combined conduction + switching loss in high-frequency (>100 kHz) PFC designs
Avalanche-rated (UIS)	286 mJ single-pulse - eliminates need for external clamping in inductive load switching
Low C_rss (5 pF)	Minimizes Miller-induced gate voltage spikes during high dV/dt switching, improving noise immunity
Integrated body diode	1.2 V forward drop at 11 A - enables synchronous rectification in LLC resonant converters without external diode
Thin-Lead TO-220 FULLPAK	Lower thermal resistance (R_thJC = 3.6 °C/W) vs. standard TO-220 - improves power density in space-constrained PSUs

Applications

Server Power Supply	Photovoltaic Inverter
Use Scenario: High-efficiency active clamp forward or LLC resonant converter in 1U rack-mount server PSU. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400–480 V DC bus with 21 A peak current. Use Value: 0.171 Ω R_DS(on) and 74 nC Q_g enable >96% efficiency at 2 kW output while maintaining thermal headroom.	Use Scenario: DC-link switching stage in string inverters converting PV array output (600–1000 V DC) to grid-synchronized AC. IC Role / Device Role / Timing Role: 600 V-class hard-switched IGBT replacement in two-level inverter bridge legs. Use Value: 286 mJ E_AS rating supports fault tolerance during islanding detection or grid fault events without desaturation protection.
Fluorescent Ballast	Induction Heating
Use Scenario: Resonant half-bridge driver in electronic fluorescent lamp ballasts operating at 25–50 kHz. IC Role / Device Role / Timing Role: Low-loss switching element controlling lamp current via series-resonant tank. Use Value: Fast 365 ns t_rr and low Q_rr prevent cross-conduction losses and ensure stable zero-voltage switching (ZVS) envelope.	Use Scenario: Full-bridge inverter driving 20–100 kHz induction heating coil in industrial cooktops or metal hardening systems. IC Role / Device Role / Timing Role: High-current, high-dV/dt switch managing up to 45 A pulsed drain current in burst-mode operation. Use Value: 62 V/ns dV/dt rating and 45 A I_DM support high-power density designs with minimal snubber requirements.

Server Power Supply

Photovoltaic Inverter

Use Scenario: High-efficiency active clamp forward or LLC resonant converter in 1U rack-mount server PSU.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400–480 V DC bus with 21 A peak current.

Use Value: 0.171 Ω R_DS(on) and 74 nC Q_g enable >96% efficiency at 2 kW output while maintaining thermal headroom.

Use Scenario: DC-link switching stage in string inverters converting PV array output (600–1000 V DC) to grid-synchronized AC.

IC Role / Device Role / Timing Role: 600 V-class hard-switched IGBT replacement in two-level inverter bridge legs.

Use Value: 286 mJ E_AS rating supports fault tolerance during islanding detection or grid fault events without desaturation protection.

Fluorescent Ballast

Induction Heating

Use Scenario: Resonant half-bridge driver in electronic fluorescent lamp ballasts operating at 25–50 kHz.

IC Role / Device Role / Timing Role: Low-loss switching element controlling lamp current via series-resonant tank.

Use Value: Fast 365 ns t_rr and low Q_rr prevent cross-conduction losses and ensure stable zero-voltage switching (ZVS) envelope.

Use Scenario: Full-bridge inverter driving 20–100 kHz induction heating coil in industrial cooktops or metal hardening systems.

IC Role / Device Role / Timing Role: High-current, high-dV/dt switch managing up to 45 A pulsed drain current in burst-mode operation.

Use Value: 62 V/ns dV/dt rating and 45 A I_DM support high-power density designs with minimal snubber requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM60ND	600 V, 22 A, R_DS(on) = 0.18 Ω, Q_g = 65 nC, TO-220FP package	Slightly lower Q_g but higher R_DS(on); no specified E_AS rating in datasheet	Preferred where gate drive loss dominates over conduction loss; verify avalanche capability per design stress test
IXTH24N60L2	600 V, 24 A, R_DS(on) = 0.16 Ω, Q_g = 85 nC, TO-247AC package	Higher current rating and superior thermal performance (R_thJC = 0.5 °C/W), but larger footprint and cost	Selected when >35 W continuous dissipation or extended lifetime at TJ > 135 °C is required

Compared with STP22NM60ND and IXTH24N60L2, SIHA22N60EL-GE3 delivers balanced trade-offs: lower R_DS(on) than ST's part with certified UIS ruggedness, and smaller TO-220 FULLPAK footprint versus IXYS's TO-247-making it optimal for cost-sensitive, space-constrained 1–3 kW industrial and telecom power stages.

Availability

SIHA22N60EL-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for SIHA22N60EL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The EL Series power MOSFETs-including SIHA22N60EL-GE3-are engineered for high-efficiency, high-voltage switching in telecom rectifiers, solar inverters, and industrial SMPS where low FOM and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SIHA22N60EL-GE3 at 100 °C case temperature?

The SIHA22N60EL-GE3 has a continuous drain current rating of 13 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within its 3.6 °C/W junction-to-case thermal resistance. The SIHA22N60EL-GE3 must be mounted to an adequately sized heatsink to maintain this rating under sustained load.

Does SIHA22N60EL-GE3 have a fully rated avalanche energy specification?

Yes, SIHA22N60EL-GE3 is explicitly rated for single-pulse unclamped inductive switching (UIS) with E_AS = 286 mJ under defined test conditions (V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 4.5 A). This certified avalanche capability is documented in the Vishay datasheet S17-1308-Rev. C and confirms robustness for inductive load switching without external protection circuits.

What is the gate threshold voltage range for SIHA22N60EL-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHA22N60EL-GE3 is specified from 3 V to 5 V at T_J = 25 °C and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing unintended conduction due to noise. The SIHA22N60EL-GE3 is not a logic-level device; it requires ≥10 V V_GS to achieve its rated R_DS(on).

How does the body diode performance of SIHA22N60EL-GE3 compare to standard FRDs?

The SIHA22N60EL-GE3 body diode has a forward voltage of 1.2 V at 11 A and 25 °C, with t_rr = 365 ns and Q_rr = 5.8 μC. While slower and higher-V_F than dedicated fast recovery diodes (FRDs), its parameters are optimized for synchronous operation in resonant converters-not for standalone rectification. For SIHA22N60EL-GE3 applications, this diode supports ZVS in LLC topologies without external devices.

Is SIHA22N60EL-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHA22N60EL-GE3 is lead (Pb)-free and halogen-free, qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in the "Soldering recommendations" section of the datasheet. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements and is suitable for standard Pb-free assembly lines without special handling.

SIHA22N60EL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 197mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA22N60EL-GE3 FAQ

1.How can I place an order for SIHA22N60EL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA22N60EL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA22N60EL-GE3 reliable?

The price and inventory of SIHA22N60EL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA22N60EL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA22N60EL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA22N60EL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA22N60EL-GE3?

SIHA22N60EL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA22N60EL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA22N60EL-GE3?

For technical support, including SIHA22N60EL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA22N60EL-GE3 requirements.

6.How does Aetrix verify that SIHA22N60EL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA22N60EL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA22N60EL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA22N60EL-GE3?

All SIHA22N60EL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA22N60EL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA22N60EL-GE3 part is unused and in its original packaging.

Return procedure for SIHA22N60EL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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