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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA240N60E-GE3

Name: SIHA240N60E-GE3
Brand: Vishay Siliconix
SKU: SIHA240N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA240N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA240N60E-GE3.pdf

Description:: MOSFET N-CH 600V 12A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA240N60E-GE3 from Vishay Siliconix is a 600 V, 12 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.208 Ω (typ. at V_GS = 10 V), Q_g = 15 nC (typ.), and avalanche-rated E_AS = 81 mJ - optimized for high-efficiency server power supplies and PFC stages.

For engineers reviewing the SIHA240N60E-GE3 datasheet, SIHA240N60E-GE3 pinout, SIHA240N60E-GE3 application, or SIHA240N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced C_oss(er) = 32 pF, 100 V/ns dv/dt capability, and lead-free/halogen-free compliance per Vishay S20-0348-Rev. B.

Technical Context

This MOSFET employs Vishay's 4th-generation E series technology to minimize conduction and switching losses simultaneously. Its low effective output capacitance (C_oss(er) = 32 pF) and fast switching (t_d(off) = 26 ns typ.) support high-frequency operation in hard-switched topologies.

The device integrates a robust body diode with t_rr = 209 ns (typ.) and Q_rr = 2.1 μC (typ.), enabling reliable operation in continuous conduction mode (CCM) PFC and synchronous rectification where diode recovery behavior critically impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC input PFC and 48 V telecom secondary-side designs with margin.
R_DS(on) (typ.)	0.208 Ω at V_GS = 10 V, T_J = 25 °C - enables <1.3 W conduction loss at 5.5 A DC current.
Q_g (typ.)	15 nC - reduces gate drive power and allows use of smaller gate drivers in high-frequency SMPS.
E_AS	81 mJ - rated unclamped inductive switching energy ensures ruggedness in overload and fault conditions.
C_oss(er)	32 pF - low energy-related output capacitance minimizes turn-on switching loss in hard-switched converters.
t_r/t_f	14/14 ns (typ.) - supports >500 kHz operation while maintaining low EMI in compact power stages.
T_J range	–55 °C to +150 °C - qualified for industrial and telecom environments with extended thermal cycling.

Pinout & Package

SIHA240N60E-GE3 is housed in a lead-free, halogen-free Thin-Lead TO-220 FULLPAK package (package outline per Vishay Doc. 62649), with drain-connected tab for direct heatsinking and optimized thermal resistance R_thJC = 4.0 °C/W (max).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal for channel modulation	Accepts 0–10 V logic-level drive; threshold V_GS(th) = 3.0–5.0 V ensures noise immunity and clean turn-on.
D (Drain)	Main high-side current path and thermal interface	Exposed drain tab electrically connected to internal die drain - must be isolated from PCB ground unless referenced to system high-side potential.
S (Source)	Reference node for gate drive and current return	Provides low-inductance source return path; used as common reference for gate driver bootstrap or isolated supply.

Key Features

Feature	Design Value
4th-generation E series technology	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for improved efficiency in 100–300 kHz PFC and LLC resonant converters.
Avalanche energy rating (E_AS)	81 mJ single-pulse rating enables reliable operation under transient overloads without external snubbers in welder or motor drive inverters.
Low C_oss(er) = 32 pF	Reduces turn-on loss in hard-switched topologies by >30% vs. prior-gen 600 V MOSFETs with comparable R_DS(on).
Body diode t_rr = 209 ns (typ.)	Enables stable CCM boost PFC operation with minimal voltage overshoot and reduced EMI filter burden.
Thin-Lead TO-220 FULLPAK	Offers 4.0 °C/W max junction-to-case thermal resistance and mechanical compatibility with standard TO-220 heatsinks.

Applications

Server Power Supply	PFC Stage
Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1 kW server PSU using continuous conduction mode (CCM) boost topology. IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus with 12 A peak current and 100 kHz switching frequency. Use Value: Low R_DS(on) and Q_g reduce total losses by ~1.2 W vs. legacy 600 V MOSFETs, improving full-load efficiency to >96.5%.	Use Scenario: Active switch in front-end PFC stage of telecom rectifier supplying 54 V DC to base station equipment. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET operating at 70–100 kHz with 600 V blocking capability and body-diode commutation. Use Value: C_oss(er) = 32 pF and t_rr = 209 ns minimize switching loss and diode reverse recovery stress, reducing heatsink size by 25%.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string-level MPPT converter for residential solar inverters (600 V DC input, 10–15 A output). IC Role / Device Role / Timing Role: High-reliability power switch subjected to repeated lightning-induced transients and thermal cycling. Use Value: E_AS = 81 mJ and –55 °C to +150 °C operating range ensure field durability across desert and coastal deployments.	Use Scenario: Inverter leg switch in 3-phase 7.5 kW industrial VFD driving induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM inverter stage requiring low conduction loss and fast turn-off. Use Value: R_DS(on) = 0.208 Ω and t_f = 14 ns enable lower conduction loss than 650 V IGBTs while maintaining clean voltage transitions.

Server Power Supply

PFC Stage

Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1 kW server PSU using continuous conduction mode (CCM) boost topology.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus with 12 A peak current and 100 kHz switching frequency.

Use Value: Low R_DS(on) and Q_g reduce total losses by ~1.2 W vs. legacy 600 V MOSFETs, improving full-load efficiency to >96.5%.

Use Scenario: Active switch in front-end PFC stage of telecom rectifier supplying 54 V DC to base station equipment.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET operating at 70–100 kHz with 600 V blocking capability and body-diode commutation.

Use Value: C_oss(er) = 32 pF and t_rr = 209 ns minimize switching loss and diode reverse recovery stress, reducing heatsink size by 25%.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string-level MPPT converter for residential solar inverters (600 V DC input, 10–15 A output).

IC Role / Device Role / Timing Role: High-reliability power switch subjected to repeated lightning-induced transients and thermal cycling.

Use Value: E_AS = 81 mJ and –55 °C to +150 °C operating range ensure field durability across desert and coastal deployments.

Use Scenario: Inverter leg switch in 3-phase 7.5 kW industrial VFD driving induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM inverter stage requiring low conduction loss and fast turn-off.

Use Value: R_DS(on) = 0.208 Ω and t_f = 14 ns enable lower conduction loss than 650 V IGBTs while maintaining clean voltage transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N60DM6	R_DS(on) = 0.28 Ω (typ.), Q_g = 19 nC (typ.), C_oss(er) = 42 pF - higher conduction and switching loss.	Less suitable for high-frequency PFC; better fit for lower-cost 50–75 kHz SMPS where thermal margin exists.	Choose STP12N60DM6 only if cost sensitivity outweighs efficiency targets and layout allows larger heatsink.
IXTH12N60L2	R_DS(on) = 0.25 Ω (typ.), Q_g = 12 nC (typ.), E_AS = 52 mJ - lower gate charge but significantly lower avalanche rating.	Not recommended for unclamped inductive loads like welding or motor drives with regenerative braking.	Select IXTH12N60L2 only for soft-switched or clamped topologies where E_AS margin is not required.

Compared with STP12N60DM6 and IXTH12N60L2, SIHA240N60E-GE3 delivers the lowest R_DS(on) × Q_g FOM and highest E_AS, making it optimal for high-efficiency, high-reliability 600 V hard-switched applications where thermal and transient robustness are critical.

Availability

SIHA240N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for SIHA240N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing control and AEC-Q101 qualification capabilities.

The E Series Power MOSFET product line targets high-efficiency, high-reliability power conversion in server, telecom, industrial, and renewable energy systems - emphasizing low FOM, rugged avalanche performance, and thermally optimized packages.

FAQ

What is the maximum continuous drain current for SIHA240N60E-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHA240N60E-GE3 is 7 A when the case temperature (T_C) is 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within R_thJC = 4.0 °C/W constraints. SIHA240N60E-GE3 maintains this rating across its full operating junction temperature range.

Does SIHA240N60E-GE3 have a fully rated avalanche capability, and what is its EAS value?

Yes, SIHA240N60E-GE3 is fully rated for single-pulse avalanche energy with E_AS = 81 mJ under test conditions of V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, and R_g = 25 Ω. This ruggedness is integral to the E Series design and validated per JEDEC standards. SIHA240N60E-GE3 leverages this rating in motor drive and welding applications where inductive load switching dominates.

What is the gate threshold voltage range for SIHA240N60E-GE3, and how does it affect drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SIHA240N60E-GE3 is specified from 3.0 V to 5.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against spurious triggering. SIHA240N60E-GE3 requires ≥7 V gate drive for full enhancement and should avoid operation near the lower threshold edge in noisy industrial environments.

How does the body diode performance of SIHA240N60E-GE3 compare to standard 600 V MOSFETs?

SIHA240N60E-GE3 features a fast, low-loss body diode with t_rr = 209 ns (typ.) and Q_rr = 2.1 μC (typ.) at T_J = 25 °C, IS = 5.5 A, and di/dt = 100 A/μs. This outperforms typical 600 V MOSFETs by ~25% in reverse recovery charge, reducing voltage spikes and EMI in PFC and synchronous rectifier circuits. SIHA240N60E-GE3's diode V_SD = 1.2 V further lowers conduction loss during freewheeling.

Is SIHA240N60E-GE3 compatible with standard TO-220 heatsinks despite its Thin-Lead FULLPAK construction?

Yes, SIHA240N60E-GE3 uses a Thin-Lead TO-220 FULLPAK package with mechanical dimensions fully compatible with standard TO-220 mounting holes and heatsink footprints (D = 8.3–8.7 mm, E = 9.7–10.3 mm, L = 13.4–13.8 mm). The exposed drain tab provides direct thermal coupling, and the M3 screw mount (0.6 Nm torque) ensures secure mechanical attachment. SIHA240N60E-GE3 retains full thermal performance without adapter plates or custom tooling.

SIHA240N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 240mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 783 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA240N60E-GE3 FAQ

1.How can I place an order for SIHA240N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA240N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA240N60E-GE3 reliable?

The price and inventory of SIHA240N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA240N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA240N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA240N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA240N60E-GE3?

SIHA240N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA240N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA240N60E-GE3?

For technical support, including SIHA240N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA240N60E-GE3 requirements.

6.How does Aetrix verify that SIHA240N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA240N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA240N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA240N60E-GE3?

All SIHA240N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA240N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA240N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHA240N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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