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Vishay Siliconix SIHA24N65EF-E3
- Part No.:
- SIHA24N65EF-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
SIHA24N65EF-E3.pdf
- Description:
- MOSFET N-CHANNEL 650V 24A TO220
- Quantity:
- Payment:
- Shipping:
Inventory:9,690
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Product details
Overview
SIHA24N65EF-E3 from Vishay Siliconix is a 650 V, 24 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring ultra-low gate charge (81 nC typ.), fast body diode (trr = 151 ns typ.), and low RDS(on) of 0.13 Ω at 10 V VGS. It is engineered for high-efficiency, high-frequency switching in telecom power supplies and solar inverters.
For engineers reviewing the SIHA24N65EF-E3 datasheet, SIHA24N65EF-E3 pinout, SIHA24N65EF-E3 application, or SIHA24N65EF-E3 equivalent, key selection criteria include its 691 mJ single-pulse avalanche energy rating, 70 V/ns dV/dt capability, and optimized FOM (RDS(on) × Qg = 10.5), critical for ZVS and phase-shifted bridge topologies.
Technical Context
This E-series MOSFET employs proprietary silicon process and cell layout to reduce reverse recovery charge (Qrr = 0.9 μC typ.) and output capacitance (Coss = 128 pF typ.), enabling lower switching losses in hard- and soft-switching converters. Its fast intrinsic body diode eliminates need for external anti-parallel diodes in bidirectional topologies like 3-level inverters.
The device integrates a robust avalanche-rated structure (EAS = 691 mJ) and operates across -55 °C to +150 °C junction temperature range. Gate threshold voltage (2–4 V) and low input capacitance (Ciss = 2774 pF) support stable drive with standard gate drivers while minimizing Miller-induced shoot-through risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports DC bus voltages up to 450 V in 3-phase rectified systems with 1.4× safety margin |
| RDS(on) max @ 25 °C | 0.156 Ω - enables <1.8 W conduction loss at 12 A continuous drain current |
| Qg max | 122 nC - reduces gate drive power requirement and allows use of lower-current driver ICs |
| trr typ. | 151 ns - minimizes dead-time penalty and commutation loss in resonant LLC and LCC converters |
| EAS | 691 mJ - withstands unclamped inductive switching events without failure in welder or charger applications |
| Coss | 128 pF - lowers capacitive turn-off loss and improves efficiency in high-frequency (>100 kHz) SMPS designs |
| dV/dt rating | 70 V/ns - ensures reliable operation under fast transient conditions in motor drives and PV inverters |
Pinout & Package
SIHA24N65EF-E3 uses a Thin-Lead TO-220 FULLPAK package (JEDEC TO-220AB variant with reduced lead thickness and improved thermal interface). The package features isolated drain tab for direct heatsink mounting and enhanced thermal resistance (RthJC = 3.2 °C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Controls channel conduction; requires 10 V drive for full RDS(on) specification; low Ciss (2774 pF) eases drive design |
| D | Drain | Main high-side switching node; electrically connected to metal tab; rated for 650 V blocking and 65 A pulsed current |
| S | Source | Power return path and gate reference; internal connection to source metallization; supports 24 A continuous body diode conduction |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 151 ns typ., Qrr = 0.9 μC typ. - enables zero-voltage switching in phase-shifted bridges without external diode |
| Low figure-of-merit | RDS(on) × Qg = 10.5 Ω·nC - delivers superior switching-conduction trade-off vs. standard 650 V MOSFETs |
| Avalanche rated | EAS = 691 mJ - eliminates need for external snubbers in inductive load switching (e.g., welding, battery charging) |
| Low Ciss | 2774 pF - reduces gate drive power and improves noise immunity in high-density power modules |
| Thin-Lead TO-220 FULLPAK | RthJC = 3.2 °C/W - provides 25% lower junction-to-case thermal resistance than standard TO-220 |
Applications
| Telecom Server PSU | Solar PV Inverter |
|---|---|
Use Scenario: Primary-side switch in 3.5 kW telecom rectifier operating at 100 kHz with phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-voltage, high-current synchronous switch handling 400 V DC bus and 20 A peak drain current. Use Value: Fast trr and low Qrr reduce dead-time losses by >15% versus standard 650 V MOSFETs, improving full-load efficiency to >96.2%. |
Use Scenario: DC-link switching stage in string inverter converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Upper-leg switch in three-level NPC inverter, requiring 650 V blocking and bidirectional conduction capability. Use Value: Integrated fast body diode enables efficient reactive power control during grid fault ride-through without adding discrete diodes. |
| Fluorescent Ballast | Industrial Battery Charger |
Use Scenario: Resonant half-bridge switch in electronic ballast driving 400 W HID lamps at 250 kHz. IC Role / Device Role / Timing Role: Hard-switched primary switch subjected to repetitive 400 V transients and high dI/dt during lamp ignition. Use Value: 70 V/ns dV/dt rating and 691 mJ EAS prevent spurious turn-on and avalanche failure during lamp strike events. |
Use Scenario: Output stage switch in 12 kW industrial Li-ion battery charger using asymmetric half-bridge with ZVS. IC Role / Device Role / Timing Role: Low-side switch conducting 24 A continuous current while supporting 100% duty-cycle body diode freewheeling. Use Value: 24 A IS rating and low VSD (0.9 V typ.) reduce conduction loss by 0.45 W per device versus comparable MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW65N60DM6 | 600 V rating, higher RDS(on) (0.125 Ω), no specified trr or Qrr data; D²PAK package | Limited to ≤400 V DC bus; unsuitable for 3-level inverter body-diode conduction | Choose only if system voltage <420 V and body diode performance is non-critical |
| IXFH30N65X2 | 650 V, 30 A, RDS(on) = 0.115 Ω, Qg = 102 nC, trr = 120 ns - superior speed but higher cost and larger TO-247 package | Better for >25 A continuous loads; requires larger PCB area and heatsink due to TO-247 footprint | Select when higher current headroom and faster recovery are required, and board space permits TO-247 |
Compared with STW65N60DM6 and IXFH30N65X2, SIHA24N65EF-E3 offers optimal balance of 650 V rating, fast body diode, compact TO-220 FULLPAK footprint, and cost-effective performance for 15–25 A telecom and solar applications.
Availability
SIHA24N65EF-E3 is available at Aetrix Electronics and suitable for telecom server PSUs, solar PV inverters, and industrial battery chargers requiring stable component supply and long-term production continuity.
Supply support for SIHA24N65EF-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The E Series Power MOSFET product line targets high-efficiency, high-frequency switching in server power, renewable energy, and industrial motor control-designed specifically to reduce switching and conduction losses in resonant and soft-switching topologies.
FAQ
What is the maximum continuous drain current for SIHA24N65EF-E3 at 100 °C case temperature?
The maximum continuous drain current for SIHA24N65EF-E3 is 6 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within the 150 °C maximum junction temperature. SIHA24N65EF-E3 maintains this rating under sustained conduction with adequate heatsinking.
Does SIHA24N65EF-E3 have a specified reverse recovery time (trr) for its body diode?
Yes, SIHA24N65EF-E3 has a specified reverse recovery time of 151 ns (typical) and 288 ns (maximum) at TJ = 25 °C, IF = 12 A, dI/dt = 100 A/μs, and VR = 400 V. This trr value is measured per JEDEC standard and directly supports design of ZVS circuits. SIHA24N65EF-E3's fast body diode is a core feature of the E series technology.
Is SIHA24N65EF-E3 suitable for use in phase-shifted full-bridge converters?
Yes, SIHA24N65EF-E3 is explicitly recommended for phase-shifted bridge (ZVS) topologies per its Applications section. Its low Qrr (0.9 μC typ.), fast trr (151 ns typ.), and 70 V/ns dV/dt rating enable reliable zero-voltage switching with minimal dead-time penalty. SIHA24N65EF-E3's EAS rating also handles residual inductive energy during transition.
What is the gate-source threshold voltage range for SIHA24N65EF-E3?
The gate-source threshold voltage (VGS(th)) for SIHA24N65EF-E3 is 2 V minimum to 4 V maximum at VDS = VGS and ID = 250 μA. This range ensures compatibility with standard 10 V gate drivers while providing noise margin against spurious turn-on. SIHA24N65EF-E3 is not a logic-level device and requires ≥8 V VGS for reliable enhancement-mode operation.
How does the Thin-Lead TO-220 FULLPAK package improve thermal performance over standard TO-220?
The Thin-Lead TO-220 FULLPAK package of SIHA24N65EF-E3 achieves a maximum junction-to-case thermal resistance (RthJC) of 3.2 °C/W, ~25% lower than standard TO-220 packages. This results from optimized internal die attach, thinner leads reducing thermal path length, and full-metal backside contact. SIHA24N65EF-E3 benefits from more efficient heat transfer to heatsinks in high-power density designs.
SIHA24N65EF-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 156mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 122 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2774 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 39W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220 Full Pack
SIHA24N65EF-E3 FAQ
1.How can I place an order for SIHA24N65EF-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHA24N65EF-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHA24N65EF-E3 reliable?
The price and inventory of SIHA24N65EF-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA24N65EF-E3 is usually 5 days.
3.What payment methods are accepted for SIHA24N65EF-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA24N65EF-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHA24N65EF-E3?
SIHA24N65EF-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHA24N65EF-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHA24N65EF-E3?
For technical support, including SIHA24N65EF-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA24N65EF-E3 requirements.
6.How does Aetrix verify that SIHA24N65EF-E3 is sourced from the original manufacturer or authorized distributors?
All SIHA24N65EF-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA24N65EF-E3 meets industry standards.
7.What is the process for return or replacement of SIHA24N65EF-E3?
All SIHA24N65EF-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA24N65EF-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHA24N65EF-E3 part is unused and in its original packaging.
Return procedure for SIHA24N65EF-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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