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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA24N65EF-GE3

Name: SIHA24N65EF-GE3
Brand: Vishay Siliconix
SKU: SIHA24N65EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA24N65EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA24N65EF-GE3.pdf

Description:: N-CHANNEL 650V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA24N65EF-GE3 from Vishay Siliconix is a 650 V, 24 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring 0.13 Ω R_DS(on) at V_GS = 10 V, 81 nC typical Q_g, and fast body diode with 151 ns t_rr. It is engineered for high-efficiency, high-frequency switching in telecom power supplies, solar inverters, and phase-shifted bridge topologies.

For engineers reviewing the SIHA24N65EF-GE3 datasheet, SIHA24N65EF-GE3 pinout, SIHA24N65EF-GE3 application, or SIHA24N65EF-GE3 equivalent, key selection criteria include its low Q_rr (0.9 μC), avalanche-rated E_AS (691 mJ), 70 V/ns dV/dt capability, and compatibility with ZVS and LCC resonant converters requiring robust body diode recovery.

Technical Context

This E-series MOSFET employs optimized silicon process and cell layout to reduce reverse recovery charge (Q_rr) and input capacitance (C_iss = 2774 pF), enabling lower switching losses in hard- and soft-switching topologies. Its gate threshold voltage (2–4 V) and low gate input resistance (0.2–1.0 Ω) support stable drive under high dV/dt conditions up to 70 V/ns.

The integrated fast body diode delivers t_rr = 151 ns and I_RRM = 13 A at 25 °C, with V_SD = 0.9–1.2 V at I_S = 12 A, making it suitable for bidirectional current paths in 3-level inverters and synchronous rectification where diode conduction is frequent and critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports DC bus voltages up to 400 V RMS in PV inverters and telecom rectifiers with margin
R_DS(on) max @ 25 °C	0.156 Ω - enables <1.8 W conduction loss at 12 A continuous drain current
Q_g max	122 nC - determines gate driver power requirement and switching speed in 100–500 kHz SMPS
t_rr typ	151 ns - reduces diode-induced switching loss and EMI in phase-shifted full-bridge designs
E_AS	691 mJ - ensures ruggedness during unclamped inductive switching events without derating
C_iss	2774 pF - lowers Miller effect and improves noise immunity in high-dV/dt environments
P_D @ T_C = 25 °C	39 W - defines thermal design baseline when mounted on heatsink with R_thJC = 3.2 °C/W

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead (Pb)-free and halogen-free), dimensions per Vishay Doc. #62649: D = 8.3–8.7 mm, d1 = 14.7–15.3 mm, L = 13.4–13.8 mm, with isolated drain tab and standard mounting screw (M3, 0.6 Nm torque).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-side power output node	Electrically connected to metal tab; requires insulated mounting or heatsink isolation
Gate	Control input	Low-impedance MOS gate; 0.2–1.0 Ω internal R_g aids damping of ringing
Source	Reference return path	Common node for gate drive reference and load current return; ties to PCB ground plane

Key Features

Feature	Design Value
Fast body diode technology	Reduces t_rr by >40% vs. standard 650 V MOSFETs, minimizing dead-time losses in bridge legs
Low Q_rr (0.9 μC typ)	Directly cuts switching energy loss in ZVS circuits and suppresses voltage overshoot during diode turn-off
Ultra-low Q_g/R_DS(on) FOM	Enables high-frequency operation (>300 kHz) without excessive gate drive power or thermal penalty
Avalanche energy rated (E_AS = 691 mJ)	Permits reliable operation in inductive load switching without external snubbers or overdesign
70 V/ns dV/dt immunity	Prevents false turn-on in high-speed half-bridge configurations with fast-rising V_DS

Applications

Telecom Server PSU	Solar PV Inverter
Use Scenario: Primary-side switch in 3.5 kW telecom rectifier operating at 200–300 kHz with phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-voltage, high-current main switching device handling 400 V DC bus and 20 A peak currents. Use Value: Low Q_rr and fast t_rr minimize body-diode conduction loss during zero-voltage switching transitions, improving efficiency by ≥0.8% at full load.	Use Scenario: Upper-leg switch in three-phase 50 kW string inverter using 3-level NPC topology with 1000 V DC input. IC Role / Device Role / Timing Role: 650 V-class switching element in active clamp and DC-link sections requiring bidirectional current handling. Use Value: 13 A I_RRM and 151 ns t_rr ensure clean commutation during reactive power cycling, reducing thermal stress on adjacent devices.
Fluorescent Ballast	Industrial Battery Charger
Use Scenario: Resonant half-bridge switch in electronic HID ballast driving 400 W metal-halide lamp at 50–100 kHz. IC Role / Device Role / Timing Role: Hard-switched resonant transistor subjected to repetitive inductive flyback and body-diode conduction. Use Value: 691 mJ E_AS rating eliminates need for external clamping, simplifying layout and improving reliability over 10,000-hour lifetime.	Use Scenario: Output stage switch in 12 kW industrial Li-ion charger using LLC resonant converter with variable frequency control. IC Role / Device Role / Timing Role: Synchronous rectifier and primary switch sharing duty cycle in dual-function topology. Use Value: Low C_iss (2774 pF) and 0.13 Ω R_DS(on) maintain high light-load efficiency while supporting 24 A continuous conduction mode.

Telecom Server PSU

Solar PV Inverter

Use Scenario: Primary-side switch in 3.5 kW telecom rectifier operating at 200–300 kHz with phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-voltage, high-current main switching device handling 400 V DC bus and 20 A peak currents.

Use Value: Low Q_rr and fast t_rr minimize body-diode conduction loss during zero-voltage switching transitions, improving efficiency by ≥0.8% at full load.

Use Scenario: Upper-leg switch in three-phase 50 kW string inverter using 3-level NPC topology with 1000 V DC input.

IC Role / Device Role / Timing Role: 650 V-class switching element in active clamp and DC-link sections requiring bidirectional current handling.

Use Value: 13 A I_RRM and 151 ns t_rr ensure clean commutation during reactive power cycling, reducing thermal stress on adjacent devices.

Fluorescent Ballast

Industrial Battery Charger

Use Scenario: Resonant half-bridge switch in electronic HID ballast driving 400 W metal-halide lamp at 50–100 kHz.

IC Role / Device Role / Timing Role: Hard-switched resonant transistor subjected to repetitive inductive flyback and body-diode conduction.

Use Value: 691 mJ E_AS rating eliminates need for external clamping, simplifying layout and improving reliability over 10,000-hour lifetime.

Use Scenario: Output stage switch in 12 kW industrial Li-ion charger using LLC resonant converter with variable frequency control.

IC Role / Device Role / Timing Role: Synchronous rectifier and primary switch sharing duty cycle in dual-function topology.

Use Value: Low C_iss (2774 pF) and 0.13 Ω R_DS(on) maintain high light-load efficiency while supporting 24 A continuous conduction mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20N65M5	650 V, 20 A, R_DS(on) = 0.19 Ω, Q_g = 62 nC, t_rr = 220 ns, TO-247 package	Higher R_DS(on) and slower diode; suited for lower-frequency, higher-current hard-switching	Prefer SIHA24N65EF-GE3 for ZVS or high-frequency designs where diode speed and Q_g dominate loss budget
IXFH24N65X2	650 V, 24 A, R_DS(on) = 0.145 Ω, Q_g = 92 nC, t_rr = 185 ns, TO-247 package	Higher Q_g and t_rr; lacks E_AS rating; larger footprint	Choose SIHA24N65EF-GE3 when board space, avalanche ruggedness, and diode recovery performance are critical

Compared with STW20N65M5 and IXFH24N65X2, SIHA24N65EF-GE3 delivers superior high-frequency switching efficiency due to its lower Q_rr, faster t_rr, and smaller TO-220 FULLPAK footprint-enabling compact, thermally efficient designs in telecom and solar systems.

Availability

SIHA24N65EF-GE3 is available at Aetrix Electronics and suitable for telecom server PSUs, solar PV inverters, and industrial battery chargers requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHA24N65EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and infrastructure markets.

The E Series Power MOSFET product line targets high-frequency, high-efficiency power conversion systems-including telecom, solar, and lighting-where fast body diode performance and low switching losses are essential design requirements.

FAQ

What is the maximum continuous drain current rating for SIHA24N65EF-GE3 at 100 °C case temperature?

The SIHA24N65EF-GE3 has a continuous drain current rating of 6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 10 A rating at 25 °C, based on a linear derating factor of 0.31 W/°C and R_thJC = 3.2 °C/W. Designers must verify heatsink interface and ambient conditions to sustain this current in real-world SIHA24N65EF-GE3 implementations.

Does SIHA24N65EF-GE3 support gate drive with 5 V logic-level signals?

No, SIHA24N65EF-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, but R_DS(on) is specified only at V_GS = 10 V (0.156 Ω max). Driving SIHA24N65EF-GE3 with 5 V may result in incomplete turn-on and excessive conduction loss; a 10–15 V gate drive is required to achieve rated R_DS(on) and optimal switching performance.

What is the significance of the "-GE3" suffix in SIHA24N65EF-GE3?

The "-GE3" suffix indicates that SIHA24N65EF-GE3 is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's green initiative. It denotes the same die and electrical specifications as SiHA24N65EF-E3 (Pb-free only), but with additional halogen-free packaging materials-critical for environmentally regulated industrial and telecom equipment requiring full material compliance documentation.

How does the body diode performance of SIHA24N65EF-GE3 compare to standard 650 V MOSFETs?

SIHA24N65EF-GE3 features an optimized fast body diode with t_rr = 151 ns (typ), Q_rr = 0.9 μC (typ), and I_RRM = 13 A-significantly improved over standard 650 V MOSFETs (typically t_rr > 250 ns, Q_rr > 3 μC). This enables cleaner commutation in phase-shifted and resonant topologies, directly reducing switching loss and EMI generation in SIHA24N65EF-GE3-based power stages.

Can SIHA24N65EF-GE3 be used in avalanche mode for circuit protection?

Yes, SIHA24N65EF-GE3 is fully rated for unclamped inductive switching with E_AS = 691 mJ (single-pulse, test condition: V_DD = 50 V, L = 28.2 mH, I_AS = 7 A). This avalanche energy rating allows controlled operation during transient overcurrent events without failure, provided junction temperature remains within -55 to +150 °C limits. Designers should validate thermal margin in repeated avalanche scenarios for SIHA24N65EF-GE3 deployments.

SIHA24N65EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 156mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2774 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA24N65EF-GE3 FAQ

1.How can I place an order for SIHA24N65EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA24N65EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA24N65EF-GE3 reliable?

The price and inventory of SIHA24N65EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA24N65EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA24N65EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA24N65EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA24N65EF-GE3?

SIHA24N65EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA24N65EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA24N65EF-GE3?

For technical support, including SIHA24N65EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA24N65EF-GE3 requirements.

6.How does Aetrix verify that SIHA24N65EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA24N65EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA24N65EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA24N65EF-GE3?

All SIHA24N65EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA24N65EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA24N65EF-GE3 part is unused and in its original packaging.

Return procedure for SIHA24N65EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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