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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA24N80AE-GE3

Name: SIHA24N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHA24N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA24N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA24N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 9A TO220

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Product details

Overview

SIHA24N80AE-GE3 from Vishay Siliconix is an 800 V, 9 A N-channel enhancement-mode power MOSFET in a Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.160 Ω (typ. at V_GS = 10 V), Q_g = 59 nC (typ.), and E_AS = 127 mJ - optimized for high-voltage switching in server power supplies and PFC stages.

For engineers reviewing the SIHA24N80AE-GE3 datasheet, SIHA24N80AE-GE3 pinout, SIHA24N80AE-GE3 application, or SIHA24N80AE-GE3 equivalent, this device is evaluated for high-efficiency, high-reliability operation in 640–800 V DC-link topologies with fast dv/dt immunity (70 V/ns) and robust unclamped inductive switching capability.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized charge balance for low R_DS(on) × Q_g figure-of-merit (FOM) and reduced effective output capacitance (C_o(er) = 52 pF). Its gate threshold voltage (V_GS(th) = 2–4 V) ensures stable turn-on under wide temperature and drive conditions.

The integrated body diode supports synchronous rectification and freewheeling in hard-switched topologies, with t_rr = 476 ns (typ.) and Q_rr = 7.8 μC at T_J = 25 °C - enabling predictable recovery behavior in continuous conduction mode (CCM) PFC and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 640 V DC-link designs with 20 % margin for voltage transients in telecom/server SMPS
R_DS(on) typ.	0.160 Ω at V_GS = 10 V, T_J = 25 °C - enables <1.9 W conduction loss at 10 A, reducing heatsink requirements
Q_g typ.	59 nC - lowers gate drive power and allows use of standard 1–2 W gate drivers in high-frequency PFC
E_AS	127 mJ - withstands single-pulse inductive energy without failure in unclamped switching events
C_o(er)	52 pF - reduces capacitive switching losses during high-voltage transitions in ZVS/ZCS circuits
T_J range	–55 to +150 °C - qualified for industrial and telecom environments with extended thermal cycling life
R_thJC	3.6 °C/W - enables 35 W continuous dissipation with moderate heatsinking (e.g., 15 cm² aluminum fin)

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead-free, halogen-free); dimensions per Vishay Doc. #62649: D = 8.3–8.7 mm, d1 = 14.7–15.3 mm, L = 13.4–13.8 mm, mounting torque = 0.6 Nm.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path collector	Internally connected to metal tab - must be electrically isolated from heatsink unless referenced to system ground
Source (S)	Current return path & reference node	Low-inductance connection critical for gate drive stability; ties to power ground plane
Gate (G)	Control terminal	High-impedance input requiring low-ESR gate resistor (R_g = 9.1 Ω typical) to damp ringing

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	9.44 Ω·nC - improves trade-off between conduction and switching loss in 100–300 kHz PFC stages
Avalanche-rated (UIS)	127 mJ single-pulse rating - eliminates need for external snubbers in flyback or forward converter primary switches
Reduced C_o(er)	52 pF - cuts stored output energy (E_oss) by ~35 % vs. legacy 800 V MOSFETs, easing ZVS implementation
High dv/dt immunity	70 V/ns at T_J = 125 °C - suppresses false turn-on in high-noise, high-dV/dt bridge configurations
Body diode Q_rr	7.8 μC (typ.) - enables predictable reverse recovery timing for synchronous rectifier control in LLC half-bridge

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost PFC front-end operating at 640 V DC-link with 100–200 kHz switching frequency. IC Role / Device Role / Timing Role: Main switching device handling full AC-line input current and high-voltage DC bus switching. Use Value: Low R_DS(on) and C_o(er) reduce total losses by >12 % vs. comparable 800 V MOSFETs, improving efficiency from 96.2 % to 96.8 % at full load.	Use Scenario: Isolated DC/DC stage in 48 V telecom rectifier with 300–500 V input range. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology managing high-voltage transient stress. Use Value: 127 mJ E_AS rating and 70 V/ns dv/dt immunity ensure reliable operation during line surges and short-circuit events without derating.
Solar PV Inverter DC-Link Switch	Industrial Motor Drive Inverter Stage
Use Scenario: DC-link switching in string inverters with 800 V nominal bus voltage and partial shading-induced transients. IC Role / Device Role / Timing Role: High-side switch in three-level NPC or T-type inverter leg handling bidirectional energy flow. Use Value: Tight V_GS(th) distribution (2–4 V) and low IDSS (<1 μA at 800 V) prevent leakage-induced shoot-through in high-temperature outdoor deployment.	Use Scenario: Inverter output stage driving 3-phase induction motors in HVAC or pump systems at 400–690 V AC line. IC Role / Device Role / Timing Role: IGBT replacement in 15–30 kW drives where Si MOSFET switching speed improves dynamic response. Use Value: 51 A pulsed drain current (I_DM) and 21 A continuous diode current support peak motor startup currents without secondary protection.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC front-end operating at 640 V DC-link with 100–200 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device handling full AC-line input current and high-voltage DC bus switching.

Use Value: Low R_DS(on) and C_o(er) reduce total losses by >12 % vs. comparable 800 V MOSFETs, improving efficiency from 96.2 % to 96.8 % at full load.

Use Scenario: Isolated DC/DC stage in 48 V telecom rectifier with 300–500 V input range.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology managing high-voltage transient stress.

Use Value: 127 mJ E_AS rating and 70 V/ns dv/dt immunity ensure reliable operation during line surges and short-circuit events without derating.

Solar PV Inverter DC-Link Switch

Industrial Motor Drive Inverter Stage

Use Scenario: DC-link switching in string inverters with 800 V nominal bus voltage and partial shading-induced transients.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC or T-type inverter leg handling bidirectional energy flow.

Use Value: Tight V_GS(th) distribution (2–4 V) and low IDSS (<1 μA at 800 V) prevent leakage-induced shoot-through in high-temperature outdoor deployment.

Use Scenario: Inverter output stage driving 3-phase induction motors in HVAC or pump systems at 400–690 V AC line.

IC Role / Device Role / Timing Role: IGBT replacement in 15–30 kW drives where Si MOSFET switching speed improves dynamic response.

Use Value: 51 A pulsed drain current (I_DM) and 21 A continuous diode current support peak motor startup currents without secondary protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW80N80F5	R_DS(on) = 0.125 Ω (typ.), Q_g = 120 nC, TO-247 package	Higher conduction efficiency but larger footprint and higher gate drive loss; requires larger PCB area	Prefer when lowest R_DS(on) dominates over layout space and gate drive complexity
IXTH80N10L2	R_DS(on) = 0.095 Ω (typ.), V_DS = 1000 V, TO-247 package, no UIS rating	Higher voltage rating and lower on-resistance, but lacks avalanche ruggedness and has higher C_iss	Prefer only in non-inductive, tightly clamped topologies where E_AS is not required

Compared with STW80N80F5 and IXTH80N10L2, SIHA24N80AE-GE3 delivers optimal balance of compact TO-220 FULLPAK packaging, proven avalanche ruggedness, and low-loss switching - making it preferred for space-constrained, high-reliability PFC and telecom rectifier designs where layout density and transient immunity are critical.

Availability

SIHA24N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHA24N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing control and AEC-Q101 qualification capabilities.

The E Series Power MOSFET product line targets high-efficiency, high-reliability power conversion in telecom, server, industrial, and renewable energy systems - emphasizing ruggedness, low FOM, and consistent parametric performance across temperature and lot.

FAQ

What is the maximum continuous drain current rating for SIHA24N80AE-GE3 at 100 °C case temperature?

The SIHA24N80AE-GE3 has a continuous drain current rating of 5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 9 A rating at 25 °C, with a linear derating factor of 0.28 W/°C. Designers must verify junction temperature rise using R_thJC = 3.6 °C/W and actual power dissipation to ensure T_J ≤ 150 °C in the final layout.

Does SIHA24N80AE-GE3 have avalanche energy rating, and how is it tested?

Yes, SIHA24N80AE-GE3 is rated for single-pulse unclamped inductive switching (UIS) with E_AS = 127 mJ. Per Vishay Doc. #92371, testing uses V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3 A. The device is stressed until energy dissipation reaches the rated value, confirming robustness against inductive turn-off transients without parameter degradation.

What is the typical gate charge profile of SIHA24N80AE-GE3, and how does it affect drive design?

The SIHA24N80AE-GE3 has Q_g = 59 nC (typ.), Q_gs = 15 nC, and Q_gd = 30 nC at V_GS = 10 V. Its Miller plateau occurs near 4–5 V, requiring careful gate driver selection to minimize switching time in the high-dv/dt region. A 9.1 Ω gate resistor yields t_d(on) = 21 ns and t_f = 51 ns, balancing EMI and loss - critical for maintaining <70 V/ns immunity in bridge configurations.

How does the body diode performance of SIHA24N80AE-GE3 compare to standard 800 V MOSFETs?

The SIHA24N80AE-GE3 body diode features t_rr = 476 ns (typ.) and Q_rr = 7.8 μC at T_J = 25 °C, with I_SD = 21 A continuous and I_SM = 51 A pulsed. Compared to generic 800 V MOSFETs, its Q_rr is ~20 % lower and V_SD = 1.2 V (typ.) - enabling cleaner commutation in PFC and reducing reverse recovery losses in hard-switched topologies.

Is SIHA24N80AE-GE3 lead-free and RoHS compliant?

Yes, SIHA24N80AE-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and Vishay's material compliance standards per Doc. #99912. The "-GE3" suffix explicitly denotes lead-free, green (halogen-free) packaging with peak soldering temperature tolerance up to 260 °C for 10 seconds, verified per J-STD-020.

SIHA24N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 184mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1836 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA24N80AE-GE3 FAQ

1.How can I place an order for SIHA24N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA24N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA24N80AE-GE3 reliable?

The price and inventory of SIHA24N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA24N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA24N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA24N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA24N80AE-GE3?

SIHA24N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA24N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA24N80AE-GE3?

For technical support, including SIHA24N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA24N80AE-GE3 requirements.

6.How does Aetrix verify that SIHA24N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA24N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA24N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA24N80AE-GE3?

All SIHA24N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA24N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA24N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHA24N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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