Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA25N50E-E3

Name: SIHA25N50E-E3
Brand: Vishay Siliconix
SKU: SIHA25N50E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHA25N50E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA25N50E-E3.pdf

Description:: MOSFET N-CH 500V 26A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:800

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHA25N50E-E3 from Vishay Siliconix is a 500 V, 26 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring 0.145 Ω R_DS(on) at V_GS = 10 V, 86 nC total gate charge, and 273 mJ single-pulse avalanche energy. It is engineered for high-efficiency hard-switched PFC and SMPS stages in ATX power supplies and two-stage LED drivers.

For engineers reviewing the SIHA25N50E-E3 datasheet, SIHA25N50E-E3 pinout, SIHA25N50E-E3 application, or SIHA25N50E-E3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), robust dV/dt immunity (65 V/ns), and integrated body diode with 338 ns reverse recovery time - critical for reliable operation in high-frequency, high-voltage switching topologies.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for reduced conduction and switching losses in continuous conduction mode (CCM) PFC and primary-side switching in offline SMPS. Its 0.125 Ω typical R_DS(on) at 25 °C and 6.6 S forward transconductance support stable current regulation under thermal stress.

The device integrates an avalanche-rated body diode with 1.2 V forward voltage at 16.5 A and 29 A peak reverse recovery current, enabling self-commutated operation in resonant and quasi-resonant converters without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for line surges and ringing in offline power supplies
R_DS(on) max @ 10 V	0.145 Ω - enables ≤ 4.6 W conduction loss at 12 A continuous drain current (T_C = 100 °C)
Q_g max	86 nC - determines gate drive power requirement and switching speed in 100–300 kHz PFC stages
E_AS	273 mJ - ensures single-pulse unclamped inductive switching survivability in hard-switched flyback or LLC primary switches
C_iss typ	1980 pF - impacts Miller effect and gate drive stability; low C_iss/C_oss ratio improves voltage-dependent switching behavior
T_J range	−55 to +150 °C - qualified for industrial and computing power supply environments with full derating above 100 °C case temperature
R_thJC max	3.6 °C/W - allows 35 W power dissipation with ≤ 126 °C junction rise over 25 °C case, supporting compact heatsink designs

Pinout & Package

SIHA25N50E-E3 is housed in a Thin-Lead TO-220 FULLPAK package (JEDEC TO-220AB variant), with 3.6 mm maximum height, 8.5 mm width, and 15.0 mm length. The package features isolated drain tab for direct heatsinking and lead-free (Pb-free) terminations compliant with RoHS and Vishay's halogen-free standard.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to metal tab - must be insulated from chassis unless referenced to system ground; provides lowest thermal resistance path to heatsink
Source	Reference node for gate control and current return	Common connection point for gate driver return and sense resistor; ties directly to power ground in non-isolated topologies
Gate	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage current; sensitive to ESD - requires series gate resistor (9.1 Ω typical) and TVS protection in production designs

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	12.4 Ω·nC - reduces combined switching + conduction loss, enabling >95 % efficiency in 500 W PFC stages
Avalanche energy rating (E_AS)	273 mJ - eliminates need for external snubbers in clamp-free flyback or boost converters subjected to load dump or startup transients
Body diode reverse recovery (Q_rr)	5.3 μC - minimizes commutation loss and EMI during zero-current switching transitions in quasi-resonant topologies
dV/dt immunity	65 V/ns - prevents false turn-on in high dv/dt environments such as motor drives or fast-switching inverters without active Miller clamping
Thin-Lead TO-220 FULLPAK	3.6 mm profile - enables low-profile power supply designs with improved airflow and reduced mechanical interference in dense PCB layouts

Applications

ATX Power Supply PFC Stage	LED Driver Two-Stage Topology
Use Scenario: Active boost PFC front-end in 500–800 W PC silver box power supplies operating at 65–100 kHz. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter, synchronized to AC line frequency and PWM controller timing. Use Value: Low R_DS(on) and Q_g reduce thermal stress on heatsink while maintaining >0.99 PF and <10 % THD across universal input (90–264 VAC).	Use Scenario: Primary-side switch in isolated flyback or LLC resonant converter feeding constant-current LED strings. IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus, gated by isolated controller with precise dead-time control. Use Value: Avalanche rating and soft-recovery body diode suppress voltage spikes during demagnetization, eliminating need for external RCD clamp networks.
Industrial SMPS Primary Switch	Server PSU Hold-Up Circuit
Use Scenario: 1 kW telecom or server power supply using asymmetric half-bridge or phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-side or low-side switch in bridge leg, driven by isolated gate driver with programmable delay matching. Use Value: 150 °C T_J rating and 3.6 °C/W R_thJC allow sustained 26 A operation under forced-air cooling, supporting high-power density designs.	Use Scenario: Energy storage switch in hold-up capacitor discharge management circuit during AC loss events. IC Role / Device Role / Timing Role: Controlled discharge path for bulk capacitors, activated only during brownout or shutdown via logic-level gate signal. Use Value: Low gate threshold (2.0–4.0 V) and ±30 V V_GS rating enable direct interface with microcontroller GPIOs without level-shifting, reducing BOM count.

ATX Power Supply PFC Stage

LED Driver Two-Stage Topology

Use Scenario: Active boost PFC front-end in 500–800 W PC silver box power supplies operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter, synchronized to AC line frequency and PWM controller timing.

Use Value: Low R_DS(on) and Q_g reduce thermal stress on heatsink while maintaining >0.99 PF and <10 % THD across universal input (90–264 VAC).

Use Scenario: Primary-side switch in isolated flyback or LLC resonant converter feeding constant-current LED strings.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus, gated by isolated controller with precise dead-time control.

Use Value: Avalanche rating and soft-recovery body diode suppress voltage spikes during demagnetization, eliminating need for external RCD clamp networks.

Industrial SMPS Primary Switch

Server PSU Hold-Up Circuit

Use Scenario: 1 kW telecom or server power supply using asymmetric half-bridge or phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-side or low-side switch in bridge leg, driven by isolated gate driver with programmable delay matching.

Use Value: 150 °C T_J rating and 3.6 °C/W R_thJC allow sustained 26 A operation under forced-air cooling, supporting high-power density designs.

Use Scenario: Energy storage switch in hold-up capacitor discharge management circuit during AC loss events.

IC Role / Device Role / Timing Role: Controlled discharge path for bulk capacitors, activated only during brownout or shutdown via logic-level gate signal.

Use Value: Low gate threshold (2.0–4.0 V) and ±30 V V_GS rating enable direct interface with microcontroller GPIOs without level-shifting, reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP24NM50N	R_DS(on) = 0.18 Ω @ 10 V; Q_g = 72 nC; TO-220 package (standard leadform)	Higher conduction loss at 12 A (+0.5 W); lower avalanche rating (190 mJ); no thin-lead profile	Acceptable where board height is unconstrained and thermal margin exceeds 15 °C; not drop-in due to different lead pitch and tab isolation
IXTP26N50P	R_DS(on) = 0.19 Ω @ 10 V; Q_g = 65 nC; TO-220 package; 500 V rating	Lower gate charge but higher R_DS(on); no specified dV/dt rating; body diode Q_rr not characterized	Better for gate-drive-limited designs; unsuitable for high-dv/dt or avalanche-prone topologies without additional protection

Compared with STP24NM50N and IXTP26N50P, SIHA25N50E-E3 delivers superior FOM (12.4 vs. ≥13.7 Ω·nC), guaranteed avalanche ruggedness, and thinner mechanical profile - making it optimal for space-constrained, high-reliability PFC and SMPS primary switches where thermal and transient performance are prioritized.

Availability

SIHA25N50E-E3 is available at Aetrix Electronics and suitable for ATX power supplies, LED lighting drivers, and industrial SMPS requiring stable component supply, long-term lifecycle assurance, and traceable Pb-free sourcing.

Supply support for SIHA25N50E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.

The SIHA25N50E-E3 belongs to Vishay's E Series Power MOSFET family, designed specifically for high-voltage, high-efficiency switching in computing, lighting, and industrial power conversion systems where low FOM and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current rating for SIHA25N50E-E3 at 100 °C case temperature?

The SIHA25N50E-E3 supports 16 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This value reflects thermal derating from the 26 A rating at 25 °C, based on a linear derating factor of 0.2 W/°C and R_thJC = 3.6 °C/W. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full load.

Does SIHA25N50E-E3 have a fully characterized body diode for synchronous rectification?

No - the SIHA25N50E-E3 body diode is optimized for freewheeling and recovery in hard-switched topologies, not synchronous rectification. Its 1.2 V forward voltage at 16.5 A and 338 ns reverse recovery time are specified for unidirectional conduction; synchronous rectification requires dedicated low-V_F, fast-recovery MOSFETs with bidirectional gate control capability, which SIHA25N50E-E3 does not support.

Is SIHA25N50E-E3 pin-compatible with standard TO-220 packages?

SIHA25N50E-E3 uses the Thin-Lead TO-220 FULLPAK footprint, which shares the same 2.54 mm lead pitch and mounting hole pattern as standard TO-220 but features shorter leads and a thinner profile (3.6 mm height vs. 9.1 mm). While PCB pad layout is compatible, mechanical clearance and heatsink interface differ - direct replacement requires verification of tab isolation and thermal interface pressure.

What is the gate threshold voltage range for SIHA25N50E-E3, and how does it affect drive circuit design?

The SIHA25N50E-E3 has a V_GS(th) range of 2.0 V to 4.0 V at I_D = 250 μA. This wide threshold necessitates gate drive voltages ≥10 V for full enhancement and low R_DS(on). Logic-level drivers (e.g., 5 V) will yield significantly higher on-resistance and thermal risk; therefore, dedicated 12 V gate drivers with adequate peak current (>1 A) are recommended for reliable switching.

Can SIHA25N50E-E3 be used in avalanche mode for repetitive operation?

No - the 273 mJ E_AS rating applies only to single-pulse unclamped inductive switching (UIS). Repetitive avalanche operation is not characterized or guaranteed for SIHA25N50E-E3. For circuits requiring repeated energy absorption (e.g., active clamping), designers must implement external snubbers or select devices explicitly rated for repetitive avalanche, as exceeding UIS limits risks parametric shift or catastrophic failure.

SIHA25N50E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1980 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA25N50E-E3 FAQ

1.How can I place an order for SIHA25N50E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA25N50E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA25N50E-E3 reliable?

The price and inventory of SIHA25N50E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA25N50E-E3 is usually 5 days.

3.What payment methods are accepted for SIHA25N50E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA25N50E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA25N50E-E3?

SIHA25N50E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA25N50E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA25N50E-E3?

For technical support, including SIHA25N50E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA25N50E-E3 requirements.

6.How does Aetrix verify that SIHA25N50E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHA25N50E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA25N50E-E3 meets industry standards.

7.What is the process for return or replacement of SIHA25N50E-E3?

All SIHA25N50E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA25N50E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA25N50E-E3 part is unused and in its original packaging.

Return procedure for SIHA25N50E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …