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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA25N50E-GE3

Name: SIHA25N50E-GE3
Brand: Vishay Siliconix
SKU: SIHA25N50E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA25N50E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA25N50E-GE3.pdf

Description:: N-CHANNEL 500V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA25N50E-GE3 from Vishay Siliconix is a 500 V, 26 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring 0.145 Ω R_DS(on) at V_GS = 10 V, 86 nC total gate charge, and 273 mJ single-pulse avalanche energy - optimized for hard-switched PFC and SMPS stages in ATX power supplies and two-stage LED drivers.

For engineers reviewing the SIHA25N50E-GE3 datasheet, SIHA25N50E-GE3 pinout, SIHA25N50E-GE3 application, or SIHA25N50E-GE3 equivalent, key selection criteria include its low figure-of-merit (R_DS(on) × Q_g), reduced switching losses via 1980 pF C_iss and 25 nC Q_gd, and robust 150 °C junction rating for high-reliability industrial power conversion designs.

Technical Context

This MOSFET employs planar silicon technology with optimized gate oxide and drift region doping to achieve balanced conduction and switching performance. Its 500 V V_DS rating supports operation across universal AC input ranges (85–265 VAC) in boost PFC circuits, while the 0.125 Ω typical R_DS(on) minimizes conduction loss at 12 A continuous drain current (T_C = 25 °C).

The device integrates an intrinsic body diode with 1.2 V forward voltage at 16.5 A and 338 ns reverse recovery time, enabling reliable freewheeling in discontinuous conduction mode (DCM) topologies. Its 65 V/ns dV/dt rating and 100 A/μs diode dI/dt capability support stable operation under fast transient conditions without spurious turn-on.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	500 V - supports 400 V DC bus with 25 % margin for surge and ringing in PFC and SMPS outputs
R_DS(on) max @ 25 °C	0.145 Ω - limits I²R conduction loss to ≤ 21 W at 12 A, enabling compact thermal design
Q_g max	86 nC - determines gate drive power requirement and switching speed in 100–500 kHz applications
E_AS	273 mJ - enables unclamped inductive switching survival in flyback or LLC resonant converters
T_J Range	–55 to +150 °C - ensures functionality across industrial ambient temperatures and high-power density PCB layouts
C_iss	1980 pF - impacts Miller effect and gate driver stability; low enough for standard 10 V gate drive with <9.1 Ω R_g
Body Diode V_SD	1.2 V @ 16.5 A - reduces freewheeling loss compared to external Schottky solutions in cost-sensitive designs

Pinout & Package

SIHA25N50E-GE3 is housed in a Thin-Lead TO-220 FULLPAK package (JEDEC TO-220AB variant with shortened leads and enhanced thermal pad), offering improved thermal resistance (R_thJC = 3.6 °C/W) versus standard TO-220 and compatibility with automated through-hole assembly.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path from source to load	Internally connected to metal tab - must be electrically isolated from heatsink unless system ground referenced
Source (S)	Return path for load current and reference for gate drive	Low-inductance connection critical for minimizing shoot-through risk during switching transitions
Gate (G)	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage handling; sensitive to ESD and requires RC snubbing in high-dV/dt environments

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	12.4 Ω·nC - directly reduces combined conduction + switching loss in high-frequency PFC stages
Avalanche-rated (UIS)	273 mJ single-pulse - eliminates need for external clamping in inductive load switching without derating
Low C_iss and C_rss	1980 pF / 8 pF - improves gate drive efficiency and reduces Miller-induced false turn-on in half-bridge configurations
Enhanced body diode performance	338 ns t_rr, 5.3 μC Q_rr - lowers diode recovery loss and EMI in DCM boost converters
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B - suitable for green electronics manufacturing

Applications

PC ATX Power Supplies	Two-Stage LED Drivers
Use Scenario: Boost PFC stage in 500–800 W silver-box PSUs operating at 65–100 kHz with universal AC input. IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter, synchronized to controller IC timing. Use Value: 0.145 Ω R_DS(on) and 86 nC Q_g enable >96 % PFC efficiency at full load while maintaining thermal rise <45 °C on 2-layer 2 oz copper PCB.	Use Scenario: Primary-side switch in isolated flyback-based LED driver with 30–60 V output and 1–3 A constant current. IC Role / Device Role / Timing Role: High-voltage switching element driven by UC384x-family controller with 50–75 kHz PWM frequency. Use Value: 500 V V_DS rating and 273 mJ E_AS ensure reliable operation during output short-circuit and line surge events without secondary protection.
Industrial SMPS	Server Power Distribution
Use Scenario: Primary switch in 1 kW telecom rectifier using phase-shifted full-bridge topology with ZVS. IC Role / Device Role / Timing Role: High-side leg switch in bridge configuration, subject to 400 V DC bus and 100–200 kHz switching. Use Value: 65 V/ns dV/dt rating and low Q_gd/Q_gs ratio suppress gate oscillation during ZVS transitions, reducing driver stress and EMI.	Use Scenario: OR-ing FET in redundant 12 V intermediate bus architecture for rack-mounted servers. IC Role / Device Role / Timing Role: Low-loss bidirectional blocking switch controlled by dedicated OR-ing controller (e.g., LTC4359). Use Value: 12 A continuous ID at T_C = 100 °C and 1.2 V body diode drop allow efficient reverse-current blocking with <0.5 W conduction loss per FET.

PC ATX Power Supplies

Two-Stage LED Drivers

Use Scenario: Boost PFC stage in 500–800 W silver-box PSUs operating at 65–100 kHz with universal AC input.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter, synchronized to controller IC timing.

Use Value: 0.145 Ω R_DS(on) and 86 nC Q_g enable >96 % PFC efficiency at full load while maintaining thermal rise <45 °C on 2-layer 2 oz copper PCB.

Use Scenario: Primary-side switch in isolated flyback-based LED driver with 30–60 V output and 1–3 A constant current.

IC Role / Device Role / Timing Role: High-voltage switching element driven by UC384x-family controller with 50–75 kHz PWM frequency.

Use Value: 500 V V_DS rating and 273 mJ E_AS ensure reliable operation during output short-circuit and line surge events without secondary protection.

Industrial SMPS

Server Power Distribution

Use Scenario: Primary switch in 1 kW telecom rectifier using phase-shifted full-bridge topology with ZVS.

IC Role / Device Role / Timing Role: High-side leg switch in bridge configuration, subject to 400 V DC bus and 100–200 kHz switching.

Use Value: 65 V/ns dV/dt rating and low Q_gd/Q_gs ratio suppress gate oscillation during ZVS transitions, reducing driver stress and EMI.

Use Scenario: OR-ing FET in redundant 12 V intermediate bus architecture for rack-mounted servers.

IC Role / Device Role / Timing Role: Low-loss bidirectional blocking switch controlled by dedicated OR-ing controller (e.g., LTC4359).

Use Value: 12 A continuous ID at T_C = 100 °C and 1.2 V body diode drop allow efficient reverse-current blocking with <0.5 W conduction loss per FET.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP24NM50N	500 V, 22 A, R_DS(on) = 0.18 Ω, Q_g = 65 nC, TO-220FP package	Higher R_DS(on) increases conduction loss by ~24 % at 12 A; lower Q_g eases gate drive but sacrifices FOM	Prefer when gate drive capability is limited and thermal margin exists for higher R_DS(on)
IXTH24N50L	500 V, 24 A, R_DS(on) = 0.16 Ω, Q_g = 72 nC, TO-247 package	Larger TO-247 footprint and higher R_thJC (0.5 °C/W vs. 3.6 °C/W) require larger heatsink; superior avalanche rating (420 mJ)	Prefer when higher avalanche robustness is mandatory and board space allows TO-247 mounting

Compared with STP24NM50N and IXTH24N50L, SIHA25N50E-GE3 delivers the lowest R_DS(on) × Q_g FOM in TO-220 form factor, enabling highest power density in space-constrained PFC and SMPS designs without sacrificing avalanche ruggedness or thermal performance.

Availability

SIHA25N50E-GE3 is available at Aetrix Electronics and suitable for PC ATX power supplies, two-stage LED lighting, and industrial SMPS requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHA25N50E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing control and AEC-Q101 qualified processes.

The E Series Power MOSFETs, including SIHA25N50E-GE3, are engineered for high-efficiency, high-reliability power conversion in computing, lighting, and industrial systems - emphasizing low FOM, avalanche ruggedness, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current for SIHA25N50E-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHA25N50E-GE3 is 16 A when the case temperature (T_C) is 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 26 A rating at 25 °C and ensures safe operation within the 150 °C maximum junction temperature limit. SIHA25N50E-GE3 maintains stable R_DS(on) performance across this range due to its positive V_DS temperature coefficient.

Does SIHA25N50E-GE3 have avalanche energy rating, and what is its value?

Yes, SIHA25N50E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 273 mJ under standardized test conditions (V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 4.4 A). This rating is guaranteed and tested per JEDEC standards, allowing SIHA25N50E-GE3 to safely absorb inductive energy without external snubbers in flyback or boost converters.

What is the gate-source threshold voltage range for SIHA25N50E-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHA25N50E-GE3 is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while providing noise immunity against spurious triggering. SIHA25N50E-GE3 is not a logic-level MOSFET; it requires ≥8 V for full enhancement and minimal R_DS(on).

How does the body diode performance of SIHA25N50E-GE3 compare to external Schottky diodes in PFC applications?

SIHA25N50E-GE3 features an integrated body diode with 1.2 V forward voltage at 16.5 A and 338 ns reverse recovery time, which is slower and higher-drop than discrete Schottky diodes but eliminates component count and layout complexity in cost-sensitive PFC designs. Its Q_rr of 5.3 μC and soft recovery characteristics reduce EMI versus fast-recovery diodes. SIHA25N50E-GE3 is optimized for use in synchronous or quasi-resonant topologies where body diode conduction is brief and controlled.

Is SIHA25N50E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHA25N50E-GE3 is lead (Pb)-free and halogen-free, qualified for lead-free soldering with peak temperature up to 300 °C for 10 seconds, per the manufacturer's recommended soldering profile. The Thin-Lead TO-220 FULLPAK package is designed for compatibility with standard wave and selective soldering equipment used in high-volume manufacturing. SIHA25N50E-GE3 meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for surface-mount assembly.

SIHA25N50E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1980 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA25N50E-GE3 FAQ

1.How can I place an order for SIHA25N50E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA25N50E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA25N50E-GE3 reliable?

The price and inventory of SIHA25N50E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA25N50E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA25N50E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA25N50E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA25N50E-GE3?

SIHA25N50E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA25N50E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA25N50E-GE3?

For technical support, including SIHA25N50E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA25N50E-GE3 requirements.

6.How does Aetrix verify that SIHA25N50E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA25N50E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA25N50E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA25N50E-GE3?

All SIHA25N50E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA25N50E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA25N50E-GE3 part is unused and in its original packaging.

Return procedure for SIHA25N50E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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