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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA25N60EFL-E3

Name: SIHA25N60EFL-E3
Brand: Vishay Siliconix
SKU: SIHA25N60EFL-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA25N60EFL-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA25N60EFL-E3.pdf

Description:: MOSFET N-CHANNEL 600V 25A TO220

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Product details

Overview

SIHA25N60EFL-E3 from Vishay Siliconix is a 600 V, 25 A N-channel power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring 0.127 Ω R_DS(on) at V_GS = 10 V, 75 nC total gate charge, and fast body diode with 138 ns typical reverse recovery time (t_rr). It delivers low conduction and switching losses for high-efficiency hard-switched SMPS in telecom and industrial UPS systems.

For engineers reviewing the SIHA25N60EFL-E3 datasheet, SIHA25N60EFL-E3 pinout, SIHA25N60EFL-E3 application, or SIHA25N60EFL-E3 equivalent, key selection criteria include its 353 mJ single-pulse avalanche energy rating, 70 V/ns dV/dt capability, reduced Q_rr (0.8–1.6 μC), and thermal resistance of 3.2 °C/W (junction-to-case), critical for reliable operation in high-stress PFC and inverter stages.

Technical Context

This MOSFET employs Vishay's E-series technology to optimize the figure-of-merit (R_DS(on) × Q_g) while integrating a fast, low-Q_rr body diode-enabling robust synchronous rectification and reduced snubber losses. Its 600 V V_DS rating and 150 °C max junction temperature support operation in 400 V DC bus systems with margin.

The device exhibits low input capacitance (C_iss = 2274 pF) and tightly controlled dynamic parameters: C_oss = 137 pF, C_rss = 4 pF, and gate input resistance of 0.4–1.4 Ω. These values enable predictable turn-on/turn-off timing (t_d(on) = 25–50 ns, t_f = 21–42 ns) under 9.1 Ω gate drive.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus with 50 % safety margin in industrial and telecom power supplies
R_DS(on) typ	0.127 Ω at V_GS = 10 V - enables <1.6 W conduction loss at 12.5 A continuous drain current
Q_g max	75 nC - determines gate driver power requirement and switching speed in 100–300 kHz PFC stages
t_rr typ	138 ns - reduces diode recovery loss and EMI in hard-switched totem-pole PFC and LLC resonant converters
E_AS	353 mJ - provides unclamped inductive switching robustness without external snubbers in UPS and welding inverters
R_thJC	3.2 °C/W - allows direct heatsink mounting with ≤ 125 °C case temperature at full 39 W dissipation
V_SD max	1.2 V at I_S = 12.5 A - limits forward conduction loss during body diode conduction in half-bridge freewheeling

Pinout & Package

SIHA25N60EFL-E3 is housed in a Thin-Lead TO-220 FULLPAK package (JEDEC TO-220AB variant), with drain-connected tab for low-inductance heatsinking and optimized leadframe geometry for reduced parasitic inductance and improved thermal transfer. The package measures 15.3 mm × 10.3 mm × 4.7 mm (L × W × H) and features gull-wing leads compatible with standard through-hole reflow or wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side current path and thermal interface	Exposed copper tab electrically connected to drain; must be isolated from heatsink unless system ground-referenced
G (Gate)	Control terminal for channel modulation	High-impedance input requiring low-inductance gate loop; sensitive to ringing due to low C_rss (4 pF)
S (Source)	Reference node for gate drive and current return	Common source connection for internal body diode cathode; defines local ground reference for gate driver supply

Key Features

Feature	Design Value
Fast body diode with low Q_rr	Q_rr = 0.8–1.6 μC and t_rr = 138 ns - minimizes reverse recovery loss and voltage overshoot in bridge-leg commutation
Low R_DS(on) × Q_g FOM	~9.5 - balances conduction efficiency and switching speed for 100–200 kHz hard-switched topologies
Avalanche-rated (UIS)	E_AS = 353 mJ - eliminates need for external clamping in inductive load switching (e.g., motor drives, welders)
Low C_iss and C_rss	C_iss = 2274 pF, C_rss = 4 pF - improves Miller immunity and enables stable operation with moderate gate resistance (9.1 Ω)
Lead (Pb)-free and halogen-free	E3 suffix indicates RoHS-compliant termination and JEDEC-standard green packaging - meets IPC/JEDEC J-STD-020 moisture sensitivity level 1

Applications

Telecom Server Power Supply	Industrial UPS Inverter
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 1–3 kW to server racks. IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 400 V DC input with zero-voltage switching assistance. Use Value: Low Q_g and fast t_rr reduce dead-time losses and improve light-load efficiency by >1.2 % versus legacy 600 V MOSFETs.	Use Scenario: Output H-bridge switch in online double-conversion UPS converting 400 V DC battery bank to 230 V AC. IC Role / Device Role / Timing Role: Hard-switched inverter leg device operating at 16–20 kHz with bidirectional current flow via body diode. Use Value: 353 mJ E_AS withstands repeated inductive turn-off transients during grid-fail transitions without derating.
String PV Inverter DC-DC Stage	Induction Heating Half-Bridge
Use Scenario: Boost switch in MPPT stage stepping up 600–1000 V PV string voltage to 1200 V DC link. IC Role / Device Role / Timing Role: High-duty-cycle, high-V_DS switching device stressed by high dv/dt and partial shading-induced transients. Use Value: 70 V/ns dV/dt rating and low C_rss suppress false turn-on in high-noise solar farm environments.	Use Scenario: Switch in 20–50 kHz series-resonant half-bridge driving induction coil for metal heating. IC Role / Device Role / Timing Role: Fast-commutating switch managing high di/dt (>100 A/μs) and reverse recovery stress during zero-crossing. Use Value: Low Q_rr and soft recovery reduce electromagnetic interference and thermal stress on gate driver ICs.

Telecom Server Power Supply

Industrial UPS Inverter

Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 1–3 kW to server racks.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 400 V DC input with zero-voltage switching assistance.

Use Value: Low Q_g and fast t_rr reduce dead-time losses and improve light-load efficiency by >1.2 % versus legacy 600 V MOSFETs.

Use Scenario: Output H-bridge switch in online double-conversion UPS converting 400 V DC battery bank to 230 V AC.

IC Role / Device Role / Timing Role: Hard-switched inverter leg device operating at 16–20 kHz with bidirectional current flow via body diode.

Use Value: 353 mJ E_AS withstands repeated inductive turn-off transients during grid-fail transitions without derating.

String PV Inverter DC-DC Stage

Induction Heating Half-Bridge

Use Scenario: Boost switch in MPPT stage stepping up 600–1000 V PV string voltage to 1200 V DC link.

IC Role / Device Role / Timing Role: High-duty-cycle, high-V_DS switching device stressed by high dv/dt and partial shading-induced transients.

Use Value: 70 V/ns dV/dt rating and low C_rss suppress false turn-on in high-noise solar farm environments.

Use Scenario: Switch in 20–50 kHz series-resonant half-bridge driving induction coil for metal heating.

IC Role / Device Role / Timing Role: Fast-commutating switch managing high di/dt (>100 A/μs) and reverse recovery stress during zero-crossing.

Use Value: Low Q_rr and soft recovery reduce electromagnetic interference and thermal stress on gate driver ICs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NM60ND	600 V, 20 A, R_DS(on) = 0.22 Ω, Q_g = 45 nC, TO-247 package	Higher R_DS(on) increases conduction loss; larger TO-247 requires more PCB area and thermal mass	Prefer when higher avalanche ruggedness (E_AS = 520 mJ) outweighs efficiency and footprint constraints
IXFH24N60X3	600 V, 24 A, R_DS(on) = 0.135 Ω, Q_g = 42 nC, TO-247 package, ultra-low Q_rr (0.35 μC)	Lower Q_g and Q_rr, but TO-247 footprint incompatible with TO-220 FULLPAK layout	Choose for highest efficiency in new designs where board space and thermal design allow TO-247 mounting

Compared with STW20NM60ND and IXFH24N60X3, SIHA25N60EFL-E3 offers superior power density (TO-220 FULLPAK), balanced R_DS(on)/Q_g trade-off, and proven fast-body-diode performance-making it optimal for cost-sensitive, space-constrained telecom and industrial SMPS where layout reuse is critical.

Availability

SIHA25N60EFL-E3 is available at Aetrix Electronics and suitable for telecom server power supplies, industrial uninterruptible power supplies (UPS), and string photovoltaic (PV) inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHA25N60EFL-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The E Series Power MOSFET product line targets high-efficiency, high-reliability switching applications-including telecom, industrial, and renewable energy systems-where fast body diode behavior, low gate charge, and avalanche robustness are essential.

FAQ

What is the maximum continuous drain current rating for SIHA25N60EFL-E3 at 100 °C case temperature?

The SIHA25N60EFL-E3 is rated for 16 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within its 3.2 °C/W junction-to-case thermal resistance. At T_C = 25 °C, the rating rises to 25 A, and the device remains within safe SOA limits up to 61 A pulsed current.

Does SIHA25N60EFL-E3 have a fully characterized body diode suitable for synchronous rectification?

Yes, SIHA25N60EFL-E3 features a fast, low-Q_rr body diode with specified t_rr = 138 ns (typ), Q_rr = 0.8–1.6 μC, and V_SD = 0.9–1.2 V at 12.5 A. These parameters are fully characterized across temperature and are validated for use in hard-switched freewheeling and synchronous rectification roles-particularly in PFC boost and half-bridge inverter legs where diode recovery behavior directly impacts efficiency and EMI.

What is the gate threshold voltage range for SIHA25N60EFL-E3, and is it compatible with standard 10 V gate drivers?

The SIHA25N60EFL-E3 has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V at T_J = 25 °C, making it fully compatible with standard 10 V gate drivers. Its R_DS(on) is specified at V_GS = 10 V, and the device exhibits strong transconductance (g_fs = 11.3 S typ), ensuring robust enhancement and low on-resistance across manufacturing variation and temperature.

How does the Thin-Lead TO-220 FULLPAK package of SIHA25N60EFL-E3 differ from standard TO-220AB in thermal and electrical performance?

The Thin-Lead TO-220 FULLPAK package used by SIHA25N60EFL-E3 features shorter, narrower leads and an extended copper drain tab that improves thermal resistance to 3.2 °C/W (junction-to-case), ~15 % better than standard TO-220AB. Electrically, its optimized leadframe reduces source inductance and enhances high-frequency switching stability-critical for minimizing gate oscillation and improving t_rr-related EMI in high-dv/dt applications.

Is SIHA25N60EFL-E3 suitable for use in automotive-grade power supplies?

SIHA25N60EFL-E3 is not AEC-Q101 qualified and is not recommended for automotive powertrain or safety-critical applications. While its 150 °C max junction temperature and avalanche rating meet some environmental requirements, Vishay positions this device for industrial, telecom, and renewable energy systems-not automotive. For automotive use, designers should select Vishay's AEC-Q101-qualified SQ-series or equivalent qualified alternatives.

SIHA25N60EFL-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 146mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2274 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA25N60EFL-E3 FAQ

1.How can I place an order for SIHA25N60EFL-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA25N60EFL-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA25N60EFL-E3 reliable?

The price and inventory of SIHA25N60EFL-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA25N60EFL-E3 is usually 5 days.

3.What payment methods are accepted for SIHA25N60EFL-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA25N60EFL-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA25N60EFL-E3?

SIHA25N60EFL-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA25N60EFL-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA25N60EFL-E3?

For technical support, including SIHA25N60EFL-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA25N60EFL-E3 requirements.

6.How does Aetrix verify that SIHA25N60EFL-E3 is sourced from the original manufacturer or authorized distributors?

All SIHA25N60EFL-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA25N60EFL-E3 meets industry standards.

7.What is the process for return or replacement of SIHA25N60EFL-E3?

All SIHA25N60EFL-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA25N60EFL-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA25N60EFL-E3 part is unused and in its original packaging.

Return procedure for SIHA25N60EFL-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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