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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA25N60EFL-GE3

Name: SIHA25N60EFL-GE3
Brand: Vishay Siliconix
SKU: SIHA25N60EFL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA25N60EFL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA25N60EFL-GE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA25N60EFL-GE3 from Vishay Siliconix is a 600 V, 25 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring low R_DS(on) (0.127 Ω @ 10 V), fast body diode (t_rr = 138 ns typ.), and low gate charge (Q_g = 50 nC typ.). It delivers high efficiency in hard-switched PFC and DC-DC stages of telecom and industrial power supplies.

For engineers reviewing the SIHA25N60EFL-GE3 datasheet, SIHA25N60EFL-GE3 pinout, SIHA25N60EFL-GE3 application, or SIHA25N60EFL-GE3 equivalent, key selection criteria include its 353 mJ single-pulse avalanche rating, 70 V/ns dV/dt capability, reduced Q_rr (0.8 μC typ.), and suitability for high-frequency switching up to 100 kHz in UPS and PV inverter half-bridge topologies.

Technical Context

This E-series MOSFET employs optimized planar silicon technology with fast-recovery body diode characteristics, enabling reduced reverse recovery losses in discontinuous conduction mode (DCM) and critical conduction mode (CrCM) operation. Its low C_iss (2274 pF typ.) and C_oss (137 pF typ.) support high-speed switching while maintaining voltage stability under fast dV/dt transients.

The device integrates avalanche energy rating (E_AS = 353 mJ) and robust thermal performance (R_thJC = 3.2 °C/W), allowing reliable operation in unclamped inductive switching conditions common in welding inverters and battery charger flyback circuits without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V DC bus designs with ≥50 % voltage margin for surge immunity in industrial UPS and PV string inverters.
R_DS(on) max	0.146 Ω @ 25 °C - Enables <1.8 W conduction loss at 12.5 A, reducing heatsink requirements in ATX and server SMPS.
Q_g max	75 nC - Limits gate drive power demand, supporting efficient operation with standard 1 W gate drivers in 65–100 kHz converters.
t_rr typ.	138 ns - Reduces diode switching loss and EMI generation during commutation in bridge-leg configurations.
E_AS	353 mJ - Withstands unclamped inductive energy in welder primary switches without failure under repetitive stress.
C_iss	2274 pF - Low input capacitance enables stable high-frequency gate control with minimal phase lag in current-mode controllers.
R_thJC	3.2 °C/W - Allows 25 A continuous operation at T_C ≤ 95 °C, simplifying thermal design for forced-air-cooled industrial enclosures.

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead (Pb)-free and halogen-free), with drain-connected tab for direct heatsinking and optimized thermal path. Dimensions per Vishay Doc. #62649: D = 8.5 mm, d1 = 15.0 mm, E = 10.0 mm, L = 13.6 mm.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path and thermal interface	Electrically connected to drain; requires insulated mounting hardware when isolated heatsink used; enables low-inductance layout in high-dI/dt applications.
Gate	Control terminal for channel modulation	Accepts 0–30 V logic-level drive; low input capacitance (C_iss) reduces Miller effect risk in high-side configurations.
Source	Reference node for gate drive and current return	Serves as common reference for gate driver ICs; low source inductance critical for minimizing shoot-through in half-bridge layouts.

Key Features

Feature	Design Value
Fast body diode	Q_rr = 0.8 μC typ., t_rr = 138 ns - Reduces reverse recovery loss by >40 % vs. standard 600 V MOSFETs in CrCM PFC stages.
Low gate charge	Q_g = 50 nC typ. - Enables <1.5 W gate drive loss at 100 kHz, improving system efficiency in high-frequency LLC resonant converters.
Avalanche rated	E_AS = 353 mJ - Eliminates need for external clamping circuits in welder inverter primary switches and UPS H-bridge legs.
Reduced FOM (R_DS(on) × Q_g)	6.36 Ω·nC - Balances conduction and switching loss for optimal 65–100 kHz operation in telecom rectifiers and industrial SMPS.
High dV/dt immunity	70 V/ns - Prevents false turn-on during fast voltage transients in motor drive half-bridges and induction heating inverters.

Applications

Telecom Server Power Supply	Industrial UPS Inverter
Use Scenario: High-efficiency active clamp forward converter in 48 V input telecom rectifier modules. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 100 kHz with synchronous rectification control. Use Value: Low Q_g and fast body diode reduce switching loss by 18 % vs. legacy 600 V MOSFETs, enabling 95.2 % peak efficiency at full load.	Use Scenario: Half-bridge leg in online double-conversion UPS delivering 3 kVA output with battery backup. IC Role / Device Role / Timing Role: High-voltage switching element handling 350 V DC bus with 50/60 Hz fundamental output synthesis. Use Value: 353 mJ E_AS rating ensures reliability during grid fault-induced overcurrent events without derating.
String PV Inverter	Induction Heating Inverter
Use Scenario: DC-DC boost stage in 1500 V string inverter converting 600–1000 V PV array output to 1200 V DC link. IC Role / Device Role / Timing Role: Fast-switching MOSFET in interleaved boost topology operating at 65 kHz with zero-voltage switching assist. Use Value: Low C_oss (137 pF) minimizes capacitive turn-on loss, improving light-load efficiency by 2.3 % at 10 % output power.	Use Scenario: Full-bridge inverter driving 20–50 kHz resonant tank in industrial metal heating systems. IC Role / Device Role / Timing Role: High-current switching device handling 25 A RMS load current with 100 A peak di/dt. Use Value: 70 V/ns dV/dt immunity prevents spurious turn-on during rapid voltage transitions across resonant capacitor.

Telecom Server Power Supply

Industrial UPS Inverter

Use Scenario: High-efficiency active clamp forward converter in 48 V input telecom rectifier modules.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 100 kHz with synchronous rectification control.

Use Value: Low Q_g and fast body diode reduce switching loss by 18 % vs. legacy 600 V MOSFETs, enabling 95.2 % peak efficiency at full load.

Use Scenario: Half-bridge leg in online double-conversion UPS delivering 3 kVA output with battery backup.

IC Role / Device Role / Timing Role: High-voltage switching element handling 350 V DC bus with 50/60 Hz fundamental output synthesis.

Use Value: 353 mJ E_AS rating ensures reliability during grid fault-induced overcurrent events without derating.

String PV Inverter

Induction Heating Inverter

Use Scenario: DC-DC boost stage in 1500 V string inverter converting 600–1000 V PV array output to 1200 V DC link.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in interleaved boost topology operating at 65 kHz with zero-voltage switching assist.

Use Value: Low C_oss (137 pF) minimizes capacitive turn-on loss, improving light-load efficiency by 2.3 % at 10 % output power.

Use Scenario: Full-bridge inverter driving 20–50 kHz resonant tank in industrial metal heating systems.

IC Role / Device Role / Timing Role: High-current switching device handling 25 A RMS load current with 100 A peak di/dt.

Use Value: 70 V/ns dV/dt immunity prevents spurious turn-on during rapid voltage transitions across resonant capacitor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK60Z	Higher R_DS(on) (0.22 Ω), higher Q_g (90 nC), no specified E_AS rating	Limited to lower-frequency (<50 kHz) applications due to slower switching and higher conduction loss	Choose STW20NK60Z only if cost sensitivity outweighs efficiency and ruggedness requirements in non-critical industrial SMPS.
IXFH24N60P	Higher Q_rr (2.5 μC), longer t_rr (320 ns), same V_DS/I_D ratings	Requires external snubber in hard-switched topologies; unsuitable for CrCM PFC without redesign	Select IXFH24N60P only when legacy board compatibility mandates TO-247 package; SIHA25N60EFL-GE3 offers superior diode performance in new designs.

Compared with STW20NK60Z and IXFH24N60P, SIHA25N60EFL-GE3 provides the lowest combined conduction–switching loss profile and highest ruggedness in 600 V hard-switched applications, making it optimal for next-generation telecom, UPS, and PV inverters where efficiency and reliability are prioritized.

Availability

SIHA25N60EFL-GE3 is available at Aetrix Electronics and suitable for telecom server power supplies, industrial UPS inverters, and string PV inverters requiring stable component supply, long-term lifecycle assurance, and traceable halogen-free sourcing.

Supply support for SIHA25N60EFL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The E Series power MOSFET product line targets high-efficiency, high-reliability switching applications in telecom, computing, and industrial power conversion-designed specifically for reduced R_DS(on) × Q_g and enhanced body diode performance.

FAQ

What is the maximum continuous drain current for SIHA25N60EFL-GE3 at 100 °C case temperature?

The SIHA25N60EFL-GE3 supports 16 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and ensures safe operation without exceeding T_J = 150 °C. At 25 °C case temperature, the rating increases to 25 A.

Does SIHA25N60EFL-GE3 have a fully rated avalanche capability, and what is its test condition?

Yes, SIHA25N60EFL-GE3 is fully rated for single-pulse avalanche energy: E_AS = 353 mJ. The test condition is V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5 A, per Vishay Document #91856. This rating applies to unclamped inductive switching events in real-world circuits like welder inverters.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHA25N60EFL-GE3, and why does it matter?

The typical Q_rr of the SIHA25N60EFL-GE3 body diode is 0.8 μC at T_J = 25 °C, I_F = 12.5 A, dI/dt = 100 A/μs, and V_R = 25 V. Low Q_rr directly reduces switching loss and EMI in hard-commutated topologies such as PFC boost and half-bridge inverters, improving overall system efficiency and thermal margin.

Can SIHA25N60EFL-GE3 be used in place of a standard 600 V MOSFET in an existing TO-220 design?

Yes, SIHA25N60EFL-GE3 uses the industry-standard Thin-Lead TO-220 FULLPAK footprint and pinout (G-D-S), making it a drop-in replacement for many legacy 600 V TO-220 MOSFETs. However, its faster body diode and lower gate charge may require minor gate resistor tuning to optimize switching behavior and minimize ringing in high-dI/dt layouts.

What is the gate-source threshold voltage range for SIHA25N60EFL-GE3, and how does it affect drive requirements?

The gate-source threshold voltage (V_GS(th)) for SIHA25N60EFL-GE3 is 3.0–5.0 V at V_DS = V_GS and I_D = 250 μA. This standard logic-level range ensures compatibility with 5 V and 10 V gate drivers without level-shifting. For full enhancement and minimal R_DS(on), a V_GS ≥ 10 V is recommended, as specified in the R_DS(on) test condition.

SIHA25N60EFL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 146mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2274 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA25N60EFL-GE3 FAQ

1.How can I place an order for SIHA25N60EFL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA25N60EFL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA25N60EFL-GE3 reliable?

The price and inventory of SIHA25N60EFL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA25N60EFL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA25N60EFL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA25N60EFL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA25N60EFL-GE3?

SIHA25N60EFL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA25N60EFL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA25N60EFL-GE3?

For technical support, including SIHA25N60EFL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA25N60EFL-GE3 requirements.

6.How does Aetrix verify that SIHA25N60EFL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA25N60EFL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA25N60EFL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA25N60EFL-GE3?

All SIHA25N60EFL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA25N60EFL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA25N60EFL-GE3 part is unused and in its original packaging.

Return procedure for SIHA25N60EFL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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