Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA2N80E-GE3

Name: SIHA2N80E-GE3
Brand: Vishay Siliconix
SKU: SIHA2N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHA2N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA2N80E-GE3.pdf

Description:: MOSFET N-CH 800V 2.8A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHA2N80E-GE3 from Vishay Siliconix is an 800 V, 2.8 A N-channel enhancement-mode power MOSFET in a Thin-Lead TO-220 FULLPAK package, featuring 2.38 Ω R_DS(on) at V_GS = 10 V, 9.8 nC total gate charge, and 14 mJ single-pulse avalanche energy-designed for high-voltage PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHA2N80E-GE3 datasheet, SIHA2N80E-GE3 pinout, SIHA2N80E-GE3 application, or SIHA2N80E-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance (R_thJC = 4.3 °C/W), body diode recovery characteristics (t_rr = 278 ns), and validated alternative parts for high-reliability 800 V switching designs.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage hard-switching operation. Its low Q_g/Q_gd ratio (9.8 nC / 3.9 nC) and reduced C_iss (315 pF) enable fast turn-on with controlled dv/dt (70 V/ns at T_J = 125 °C), minimizing switching loss in continuous conduction mode (CCM) PFC boost stages.

The integrated body diode is rated for 2.8 A continuous source-drain current and exhibits 1.2 V forward voltage at 1 A and 25 °C. Its reverse recovery charge (Q_rr = 0.9 μC) and soft recovery behavior support reliable operation in bridge configurations without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports 650 V AC input rectified to ~920 V DC peak in universal-input PFC, with 15 % margin against transients
R_DS(on) typ.	2.38 Ω at V_GS = 10 V - enables <1.5 W conduction loss at 1.0 A RMS in 2 kW PFC stage at 100 °C case temperature
Q_g max.	19.6 nC - determines gate driver power requirement (~1.2 mW per MHz at 12 V drive) in 100–300 kHz SMPS
E_AS	14 mJ - ensures robustness against unclamped inductive switching events in motor drive H-bridge freewheel paths
t_rr	278 ns typical - limits diode reverse recovery current spike (I_RRM = 5 A) during hard commutation in LLC resonant converters
R_thJC	4.3 °C/W - allows 29 W dissipation with ≤125 °C junction rise above 25 °C heatsink, supporting compact thermal design

Pinout & Package

SIHA2N80E-GE3 uses a Thin-Lead TO-220 FULLPAK package with drain-connected tab for direct heatsink mounting and enhanced thermal performance. The leadframe design reduces parasitic inductance and improves power cycling reliability versus standard TO-220.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures clean turn-on with standard PWM controllers
D (Drain)	High-side power output	Internally connected to metal tab-must be electrically isolated from heatsink unless system ground referenced
S (Source)	Power return and reference node	Serves as local ground for gate drive; low-inductance layout critical to suppress ringing during fast dV/dt transitions

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	23.3 Ω·nC - directly reduces combined switching + conduction loss in high-frequency PFC, improving efficiency by ≥0.3 % at full load
Avalanche-rated (UIS)	14 mJ single-pulse - eliminates need for external clamping in flyback snubberless designs operating up to 200 kHz
Ultra-low Q_gd/Q_g ratio	3.9/9.8 nC = 0.4 - minimizes Miller plateau duration, enabling stable operation with minimal gate resistance (R_g = 9.1 Ω)
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - supports green manufacturing and end-of-life recycling requirements

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost converter in 3 kW front-end AC/DC supply handling universal 85–265 V AC input. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) PFC controller feedback loop. Use Value: 2.38 Ω R_DS(on) and 9.8 nC Q_g reduce total losses by 1.1 W vs. legacy 800 V MOSFETs, enabling >96 % efficiency at 230 V AC full load.	Use Scenario: Primary-side switch in 48 V/1500 W telecom rectifier with active OR-ing and hot-swap capability. IC Role / Device Role / Timing Role: Main switching element in phase-shifted full-bridge topology operating at 150 kHz. Use Value: 70 V/ns dv/dt rating and soft-recovery body diode prevent shoot-through during zero-voltage switching transitions, reducing EMI filter size by 30 %.
Solar PV Inverter DC Link	Industrial Battery Charger
Use Scenario: DC link switch in string-level 1000 V PV inverter with transformerless topology. IC Role / Device Role / Timing Role: High-voltage isolation switch controlling DC bus connection between MPPT stage and inverter bridge. Use Value: 800 V V_DS rating with 15 % margin over 900 V DC link ensures long-term reliability under solar array transient surges per IEC 61000-4-5.	Use Scenario: Primary switch in 800 V battery charging system for industrial forklifts and energy storage systems. IC Role / Device Role / Timing Role: Hard-switched MOSFET in resonant LLC half-bridge primary side. Use Value: 14 mJ E_AS withstands repeated inductive turn-off events during constant-current charging cycles, eliminating need for external avalanche protection.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost converter in 3 kW front-end AC/DC supply handling universal 85–265 V AC input.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) PFC controller feedback loop.

Use Value: 2.38 Ω R_DS(on) and 9.8 nC Q_g reduce total losses by 1.1 W vs. legacy 800 V MOSFETs, enabling >96 % efficiency at 230 V AC full load.

Use Scenario: Primary-side switch in 48 V/1500 W telecom rectifier with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Main switching element in phase-shifted full-bridge topology operating at 150 kHz.

Use Value: 70 V/ns dv/dt rating and soft-recovery body diode prevent shoot-through during zero-voltage switching transitions, reducing EMI filter size by 30 %.

Solar PV Inverter DC Link

Industrial Battery Charger

Use Scenario: DC link switch in string-level 1000 V PV inverter with transformerless topology.

IC Role / Device Role / Timing Role: High-voltage isolation switch controlling DC bus connection between MPPT stage and inverter bridge.

Use Value: 800 V V_DS rating with 15 % margin over 900 V DC link ensures long-term reliability under solar array transient surges per IEC 61000-4-5.

Use Scenario: Primary switch in 800 V battery charging system for industrial forklifts and energy storage systems.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in resonant LLC half-bridge primary side.

Use Value: 14 mJ E_AS withstands repeated inductive turn-off events during constant-current charging cycles, eliminating need for external avalanche protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.5 A, R_DS(on) = 1.2 Ω, Q_g = 60 nC, TO-220FP package	Higher current rating but 2.5× higher Q_g and no avalanche rating - requires larger gate driver and external clamping	Prefer when higher continuous current (>4 A) is needed and switching frequency <65 kHz; avoid in PFC where Q_g dominates loss
IXTH8N80L2	800 V, 8 A, R_DS(on) = 1.05 Ω, Q_g = 42 nC, TO-247 package	Lower R_DS(on) but 4.3× higher Q_g and larger footprint - thermal resistance R_thJC = 1.5 °C/W improves cooling but increases board area	Choose for high-power motor drives needing lower conduction loss; not optimal for space-constrained telecom SMPS due to TO-247 size

Compared with STP8NK80ZFP and IXTH8N80L2, SIHA2N80E-GE3 offers the lowest R_DS(on) × Q_g figure-of-merit (23.3 Ω·nC) among 800 V TO-220 devices, making it uniquely suited for high-frequency, thermally constrained PFC and telecom rectifier designs where both efficiency and board area matter.

Availability

SIHA2N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-lifecycle assurance, and traceable sourcing for industrial OEM programs.

Supply support for SIHA2N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The E Series power MOSFETs-including SIHA2N80E-GE3-are engineered for high-voltage, high-reliability switching in server, telecom, and renewable energy power conversion systems where low gate charge and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current for SIHA2N80E-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHA2N80E-GE3 is 1.8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 2.8 A rating at 25 °C, based on the linear derating factor of 0.23 W/°C and R_thJC = 4.3 °C/W. Designers must verify junction temperature using actual PCB layout and heatsink conditions before finalizing the SIHA2N80E-GE3 current rating.

Does SIHA2N80E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHA2N80E-GE3 is fully rated for single-pulse unclamped inductive switching (UIS) with E_AS = 14 mJ. Testing follows JEDEC standard JESD24-11 using V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 0.9 A, starting from T_J = 25 °C. This rating confirms robustness in real-world overcurrent fault conditions without requiring external clamping circuits in properly designed SIHA2N80E-GE3 applications.

What is the body diode forward voltage of SIHA2N80E-GE3, and how does it affect synchronous rectification?

The body diode forward voltage of SIHA2N80E-GE3 is 1.2 V at I_S = 1 A and T_J = 25 °C. While usable for freewheeling, its relatively high V_SD makes it unsuitable for primary synchronous rectification-designers should use dedicated low-V_F Schottky or MOSFETs in secondary-side rectification. In high-side switch configurations, this V_SD impacts dead-time selection to avoid cross-conduction in half-bridge topologies using SIHA2N80E-GE3.

Can SIHA2N80E-GE3 be driven directly by a 5 V microcontroller GPIO pin?

No-SIHA2N80E-GE3 requires V_GS = 10 V for full R_DS(on) specification (2.38 Ω); its gate threshold voltage range is 2.0–4.0 V, meaning a 5 V drive may partially turn on the device but will result in significantly higher R_DS(on) (>5 Ω) and excessive conduction loss. A dedicated gate driver IC (e.g., TC4420 or UCC27531) delivering 10–15 V is required for reliable SIHA2N80E-GE3 operation in production systems.

What is the thermal resistance from junction to case (R_thJC) for SIHA2N80E-GE3, and how is it measured?

The maximum junction-to-case thermal resistance (R_thJC) for SIHA2N80E-GE3 is 4.3 °C/W, measured from the silicon die to the drain metal tab surface (1.6 mm from case per note e). This value is derived from transient thermal impedance curves and validated per JEDEC JESD51-14. It enables accurate junction temperature estimation when mounted on a heatsink with known interface resistance-critical for lifetime prediction in SIHA2N80E-GE3-based power supplies operating at elevated ambient temperatures.

SIHA2N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.75Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19.6 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 315 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 29W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA2N80E-GE3 FAQ

1.How can I place an order for SIHA2N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA2N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA2N80E-GE3 reliable?

The price and inventory of SIHA2N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA2N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA2N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA2N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA2N80E-GE3?

SIHA2N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA2N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA2N80E-GE3?

For technical support, including SIHA2N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA2N80E-GE3 requirements.

6.How does Aetrix verify that SIHA2N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA2N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA2N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA2N80E-GE3?

All SIHA2N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA2N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA2N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHA2N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …