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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA30N60AEL-GE3

Name: SIHA30N60AEL-GE3
Brand: Vishay Siliconix
SKU: SIHA30N60AEL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA30N60AEL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA30N60AEL-GE3.pdf

Description:: MOSFET N-CH 600V 28A TO220

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Product details

Overview

SIHA30N60AEL-GE3 from Vishay Siliconix is a 600 V, 28 A N-channel power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.105 Ω (typ. at V_GS = 10 V), Q_g = 60 nC (typ.), and avalanche-rated E_AS = 353 mJ - designed for high-efficiency switching in telecom and server SMPS primary-side circuits.

For engineers reviewing the SIHA30N60AEL-GE3 datasheet, SIHA30N60AEL-GE3 pinout, SIHA30N60AEL-GE3 application, or SIHA30N60AEL-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, 600 V blocking capability, and robust UIS rating for hard-switched PFC and LLC resonant converters.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve low conduction loss and fast switching dynamics. Its C_iss = 2565 pF (typ.) and C_oss = 109 pF (typ.) support efficient operation in high-frequency hard-switched topologies up to 200 kHz.

The device integrates an intrinsic body diode with t_rr = 335 ns (typ.) and Q_rr = 5.4 μC (typ.), enabling reliable freewheeling in bridge configurations. Gate threshold voltage V_GS(th) = 2.0–4.0 V ensures stable turn-on under standard 10 V gate drive while maintaining noise immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports primary-side switching in universal-input 400 V DC bus and 380 V AC rectified systems
R_DS(on) typ.	0.105 Ω at V_GS = 10 V, I_D = 15 A - enables <1.6 W conduction loss at 15 A, critical for thermal management in compact PSUs
Q_g typ.	60 nC - reduces gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency designs
E_AS	353 mJ - provides unclamped inductive switching robustness without external snubbers in PFC boost stages
C_iss	2565 pF - balances input capacitance for stable gate control while minimizing Miller effect during dV/dt transitions
t_r/t_f	24/33 ns (typ.) - enables fast transition times essential for reducing switching losses in >100 kHz SMPS
R_thJC	3.2 °C/W - allows direct heatsink mounting for high-power density layouts with junction temperature control

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK - thermally enhanced variant with reduced leadframe thickness for improved solder joint reliability and lower thermal resistance vs. standard TO-220.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 10 V logic-level drive; low Q_gs = 14 nC minimizes Miller plateau duration
D	Drain	Main high-voltage current path; electrically connected to tab for low-inductance heatsink interface
S	Source	Power return and reference node for gate drive; tied to PCB ground plane for stable switching waveform integrity

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	6.3 Ω·nC - directly improves system efficiency by reducing combined conduction and switching loss trade-off
Avalanche energy rating	353 mJ single-pulse - eliminates need for external clamping in inductive load transients common in PFC chokes
Ultra-low Q_gd	19 nC - suppresses Miller-induced false turn-on during high dV/dt commutation, enhancing reliability in half-bridge operation
Body diode Q_rr	5.4 μC (typ.) - lowers reverse recovery loss and EMI generation compared to standard MOSFETs in synchronous rectification

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switch in 1 kW+ 80 PLUS Titanium server PSUs operating at 100–200 kHz with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 400 V DC bus with precise PWM-controlled on/off timing. Use Value: Low R_DS(on) and Q_g reduce total power loss by ≥8% versus legacy 600 V MOSFETs, improving thermal margin and PSU efficiency to >96%.	Use Scenario: Boost switch in -48 V telecom rectifier front-end delivering 3 kW output with PFC stage. IC Role / Device Role / Timing Role: Fast-turning main switch managing high di/dt currents during boost phase with tight dead-time control. Use Value: 353 mJ E_AS withstands repetitive line surges and inductor flyback without derating, extending field life in harsh telecom environments.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching device in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-reliability power switch in H-bridge or three-phase inverter leg, subject to repeated unclamped inductive stress. Use Value: Avalanche rating and low C_oss enable robust operation under partial shading and rapid MPPT transients without snubber circuitry.	Use Scenario: Inverter leg switch in 7.5 kW industrial VFD driving induction motors with regenerative braking. IC Role / Device Role / Timing Role: Bidirectional current-handling switch supporting both motoring and controlled regeneration via body diode conduction. Use Value: Body diode t_rr = 335 ns and Q_rr = 5.4 μC minimize reverse recovery loss and voltage overshoot during commutation, reducing IGBT-like stress on gate drivers.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in 1 kW+ 80 PLUS Titanium server PSUs operating at 100–200 kHz with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 400 V DC bus with precise PWM-controlled on/off timing.

Use Value: Low R_DS(on) and Q_g reduce total power loss by ≥8% versus legacy 600 V MOSFETs, improving thermal margin and PSU efficiency to >96%.

Use Scenario: Boost switch in -48 V telecom rectifier front-end delivering 3 kW output with PFC stage.

IC Role / Device Role / Timing Role: Fast-turning main switch managing high di/dt currents during boost phase with tight dead-time control.

Use Value: 353 mJ E_AS withstands repetitive line surges and inductor flyback without derating, extending field life in harsh telecom environments.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching device in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-reliability power switch in H-bridge or three-phase inverter leg, subject to repeated unclamped inductive stress.

Use Value: Avalanche rating and low C_oss enable robust operation under partial shading and rapid MPPT transients without snubber circuitry.

Use Scenario: Inverter leg switch in 7.5 kW industrial VFD driving induction motors with regenerative braking.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch supporting both motoring and controlled regeneration via body diode conduction.

Use Value: Body diode t_rr = 335 ns and Q_rr = 5.4 μC minimize reverse recovery loss and voltage overshoot during commutation, reducing IGBT-like stress on gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW30NM60ND	R_DS(on) = 0.12 Ω (typ.), Q_g = 65 nC, E_AS = 290 mJ, TO-247 package	Higher thermal resistance (R_thJC = 0.5 °C/W) requires larger heatsink; not drop-in due to different footprint	Preferred where higher avalanche margin is acceptable and board space allows TO-247 mounting
IXFH30N60P	R_DS(on) = 0.135 Ω (typ.), Q_g = 85 nC, no UIS rating, TO-247 package	Lacks avalanche qualification; higher switching loss limits usable frequency to ≤120 kHz	Selected only when cost sensitivity outweighs efficiency and ruggedness requirements in non-critical industrial supplies

Compared with STW30NM60ND and IXFH30N60P, SIHA30N60AEL-GE3 delivers superior FOM (6.3 vs. 7.8 and 11.5 Ω·nC), lower thermal resistance in FULLPAK, and certified UIS performance - making it optimal for space-constrained, high-reliability telecom and server power designs requiring minimal layout change.

Availability

SIHA30N60AEL-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIHA30N60AEL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The EL Series power MOSFETs, including SIHA30N60AEL-GE3, were engineered for high-frequency, high-efficiency switching in demanding power conversion applications such as telecom rectifiers and server PSUs.

FAQ

What is the maximum continuous drain current rating for SIHA30N60AEL-GE3 at 100 °C case temperature?

The SIHA30N60AEL-GE3 has a continuous drain current rating of 18 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 28 A rating at 25 °C case temperature and must be applied in thermal design calculations to ensure safe operation within the 150 °C maximum junction temperature limit. The SIHA30N60AEL-GE3's R_thJC = 3.2 °C/W supports this rating with appropriate heatsinking.

Does SIHA30N60AEL-GE3 have avalanche capability, and how is it rated?

Yes, SIHA30N60AEL-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy E_AS of 353 mJ, tested per JEDEC standard JESD24-1. This rating was measured at V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5 A. The SIHA30N60AEL-GE3's avalanche robustness eliminates the need for external clamping in PFC and flyback designs where inductive energy must be safely dissipated.

What is the typical gate charge profile of SIHA30N60AEL-GE3, and how does it impact driver selection?

The SIHA30N60AEL-GE3 has Q_g = 60 nC (typ.), Q_gs = 14 nC, and Q_gd = 19 nC at V_GS = 10 V. Its low Q_gd minimizes Miller plateau duration, allowing use of medium-drive gate drivers like the UCC27531 or TC4427 without excessive power dissipation. The SIHA30N60AEL-GE3's total gate charge enables efficient 200 kHz operation with <1 W gate drive loss using a 10 Ω series resistor.

How does the body diode performance of SIHA30N60AEL-GE3 compare to standard 600 V MOSFETs?

The SIHA30N60AEL-GE3 features a fast, soft-recovery body diode with t_rr = 335 ns (typ.) and Q_rr = 5.4 μC (typ.) at T_J = 25 °C, IF = 15 A, di/dt = 100 A/μs, and V_R = 400 V. This outperforms many standard 600 V MOSFETs (t_rr > 500 ns) and reduces reverse recovery loss and EMI in bridge configurations. The SIHA30N60AEL-GE3's diode V_SD = 1.2 V further lowers conduction loss during freewheeling.

Is SIHA30N60AEL-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHA30N60AEL-GE3 is qualified for lead-free reflow soldering with a peak temperature of 260 °C for 10 seconds, as stated in the Soldering Recommendations section. Its Thin-Lead TO-220 FULLPAK package uses matte tin-plated leads compliant with RoHS and halogen-free standards. The SIHA30N60AEL-GE3's thermal design supports reliable attachment to PCBs using standard IPC-J-STD-020-compliant profiles without risk of delamination or voiding.

SIHA30N60AEL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EL

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 120mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2565 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA30N60AEL-GE3 FAQ

1.How can I place an order for SIHA30N60AEL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA30N60AEL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA30N60AEL-GE3 reliable?

The price and inventory of SIHA30N60AEL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA30N60AEL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA30N60AEL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA30N60AEL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA30N60AEL-GE3?

SIHA30N60AEL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA30N60AEL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA30N60AEL-GE3?

For technical support, including SIHA30N60AEL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA30N60AEL-GE3 requirements.

6.How does Aetrix verify that SIHA30N60AEL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA30N60AEL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA30N60AEL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA30N60AEL-GE3?

All SIHA30N60AEL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA30N60AEL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA30N60AEL-GE3 part is unused and in its original packaging.

Return procedure for SIHA30N60AEL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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