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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA4N80E-GE3

Name: SIHA4N80E-GE3
Brand: Vishay Siliconix
SKU: SIHA4N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA4N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA4N80E-GE3.pdf

Description:: MOSFET N-CH 800V 4.3A TO220

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Product details

Overview

SIHA4N80E-GE3 from Vishay Siliconix is an 800 V, 4.3 A N-channel enhancement-mode power MOSFET in a Thin-Lead TO-220 FULLPAK package, featuring 1.1 Ω R_DS(on) at V_GS = 10 V, 32 nC total gate charge, and 56 mJ single-pulse avalanche energy - optimized for high-voltage switching in telecom PFC stages and solar PV inverters.

For engineers reviewing the SIHA4N80E-GE3 datasheet, SIHA4N80E-GE3 pinout, SIHA4N80E-GE3 application, or SIHA4N80E-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJC = 4.1 °C/W), body diode recovery characteristics (t_rr = 248 ns), and validated alternative parts for high-reliability industrial power conversion design.

Technical Context

The SIHA4N80E-GE3 employs planar vertical DMOS technology with optimized gate oxide and drift region doping to achieve low figure-of-merit (R_DS(on) × Q_g = 35.2 Ω·nC). Its 800 V V_DS rating supports operation across 400–800 V DC bus architectures without derating under transient overvoltage conditions.

Designed for hard-switched topologies, it delivers 70 V/ns dv/dt immunity at T_J = 125 °C and integrates a fast-recovery body diode (Q_rr = 1.4 μC, I_RRM = 9.2 A) suitable for synchronous rectification and freewheeling in continuous conduction mode (CCM) PFC boost stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 700 V DC bus designs with 15 % margin for line surges in telecom and solar inverters
R_DS(on) typ	1.1 Ω at V_GS = 10 V - enables <1.1 W conduction loss at 3.3 A RMS in 25 °C ambient PFC applications
Q_g max	32 nC - reduces gate drive power requirement and enables use with low-current 10 V gate drivers
E_AS	56 mJ - withstands unclamped inductive switching events in motor drives and welding equipment
t_rr	248 ns - minimizes reverse recovery losses during hard commutation in boost and LLC resonant converters
R_thJC	4.1 °C/W - allows 69 W dissipation with ≤ 28 °C case-to-heatsink ΔT using standard mounting torque (0.6 Nm)
I_D cont @ T_C=100 °C	2.7 A - defines usable current limit in enclosed industrial enclosures with limited airflow

Pinout & Package

Thin-Lead TO-220 FULLPAK package with isolated drain tab (D), source (S), and gate (G) terminals; 3-pin through-hole mounting; 14.7 mm × 10.3 mm footprint; 13.6 mm height; lead (Pb)-free and halogen-free per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side power terminal	Electrically connected to metal tab - must be mounted to heatsink with thermal interface material and insulated if chassis-ground referenced
S (Source)	Power return and reference node	Common connection point for gate driver return, current sense resistor, and low-side switch source in half-bridge configurations
G (Gate)	Control input	High-impedance MOSFET control terminal requiring <32 nC charge for full enhancement; sensitive to ESD and ringing

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	35.2 Ω·nC - improves efficiency in high-frequency (>100 kHz) PFC and SMPS by balancing conduction and switching losses
Avalanche-rated (UIS)	56 mJ single-pulse - eliminates need for external snubbers in inductive load switching circuits like welder output stages
Fast body diode recovery	t_rr = 248 ns, Q_rr = 1.4 μC - reduces cross-conduction losses and EMI in synchronous rectifier and bidirectional DC/DC designs
High dv/dt immunity	70 V/ns at T_J = 125 °C - prevents false turn-on during high-slew-rate voltage transients in high-density power modules
TO-220 FULLPAK isolation	Drain tab electrically isolated from leads - enables direct heatsink mounting without insulating washers in floating-drain topologies

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: High-efficiency active clamp forward or LLC resonant converter in 48 V intermediate bus systems. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC input with 100–300 kHz switching frequency. Use Value: 1.1 Ω R_DS(on) and 32 nC Q_g reduce combined conduction + switching losses below 2.5 W at 3 A load, enabling >95 % efficiency at full load.	Use Scenario: Boost stage in string-level solar microinverters operating at 600–800 V DC input. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in non-isolated boost converter topology. Use Value: 800 V V_DS rating and 56 mJ E_AS ensure robustness against PV string voltage spikes during partial shading or lightning-induced surges.
Industrial Motor Drive	Fluorescent Ballast Lighting
Use Scenario: Inverter leg switch in 3-phase 230 V AC input variable frequency drives for HVAC compressors. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter stage with 10–20 kHz PWM. Use Value: Fast body diode (t_rr = 248 ns) minimizes shoot-through risk during dead-time transitions and reduces heat generation in freewheeling paths.	Use Scenario: Resonant half-bridge switch in electronic fluorescent lamp ballasts driving 40–60 W lamps. IC Role / Device Role / Timing Role: High-frequency (25–65 kHz) switching device in series-resonant tank circuit. Use Value: Low C_iss (622 pF) and C_oss (34 pF) enable clean zero-voltage switching (ZVS) initiation and reduce capacitive switching losses at high frequency.

Server Power Supply

Solar PV Inverter

Use Scenario: High-efficiency active clamp forward or LLC resonant converter in 48 V intermediate bus systems.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC input with 100–300 kHz switching frequency.

Use Value: 1.1 Ω R_DS(on) and 32 nC Q_g reduce combined conduction + switching losses below 2.5 W at 3 A load, enabling >95 % efficiency at full load.

Use Scenario: Boost stage in string-level solar microinverters operating at 600–800 V DC input.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in non-isolated boost converter topology.

Use Value: 800 V V_DS rating and 56 mJ E_AS ensure robustness against PV string voltage spikes during partial shading or lightning-induced surges.

Industrial Motor Drive

Fluorescent Ballast Lighting

Use Scenario: Inverter leg switch in 3-phase 230 V AC input variable frequency drives for HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter stage with 10–20 kHz PWM.

Use Value: Fast body diode (t_rr = 248 ns) minimizes shoot-through risk during dead-time transitions and reduces heat generation in freewheeling paths.

Use Scenario: Resonant half-bridge switch in electronic fluorescent lamp ballasts driving 40–60 W lamps.

IC Role / Device Role / Timing Role: High-frequency (25–65 kHz) switching device in series-resonant tank circuit.

Use Value: Low C_iss (622 pF) and C_oss (34 pF) enable clean zero-voltage switching (ZVS) initiation and reduce capacitive switching losses at high frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK80ZFP	800 V, 3.7 A, R_DS(on) = 1.4 Ω, Q_g = 24 nC, TO-220FP package (non-isolated drain)	Lacks drain-isolation; requires insulating pad for heatsink mounting; lower current rating limits use in >3 A PFC stages	Select when cost sensitivity outweighs need for isolated drain and higher current capability
IXTH4N80L	800 V, 4.0 A, R_DS(on) = 1.2 Ω, Q_g = 28 nC, TO-247AC package	Larger TO-247 footprint; higher R_thJC (0.83 °C/W) but superior thermal mass; no FULLPAK isolation	Prefer for high-power, forced-air-cooled designs where PCB space permits larger package and isolation is not required

Compared with STP4NK80ZFP and IXTH4N80L, the SIHA4N80E-GE3 offers superior drain isolation, lower R_DS(on), and better FOM for compact, heatsink-mounted PFC and inverter designs - making it optimal for space-constrained industrial and renewable energy systems where thermal management and layout simplicity are critical.

Availability

SIHA4N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for SIHA4N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHA4N80E-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in telecom, industrial, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current for SIHA4N80E-GE3 at 100 °C case temperature?

The SIHA4N80E-GE3 supports a continuous drain current of 2.7 A at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This value reflects thermal derating due to junction-to-case thermal resistance (R_thJC = 4.1 °C/W) and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full-load conditions.

Does SIHA4N80E-GE3 have an isolated drain tab in its TO-220 FULLPAK package?

Yes, the SIHA4N80E-GE3 features an electrically isolated drain tab in its Thin-Lead TO-220 FULLPAK package. Unlike standard TO-220 variants, the drain is internally insulated from the mounting surface, allowing direct attachment to a grounded heatsink without additional insulating hardware - a key advantage for high-density power supply layouts and simplified thermal design.

What is the typical reverse recovery time (t_rr) of the body diode in SIHA4N80E-GE3?

The SIHA4N80E-GE3 body diode has a typical reverse recovery time (t_rr) of 248 ns under test conditions of T_J = 25 °C, I_F = 2 A, di/dt = 100 A/μs, and V_R = 25 V. This fast recovery characteristic reduces switching losses and EMI in hard-switched topologies such as boost PFC and resonant converters where the intrinsic diode conducts during dead time.

Can SIHA4N80E-GE3 be used in avalanche mode, and what is its rated energy?

Yes, the SIHA4N80E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 56 mJ. This rating is measured under standardized conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 2.0 A) and confirms robustness against transient overcurrent events in motor drive and welding applications without external protection.

What gate-source voltage range is safe for continuous operation of SIHA4N80E-GE3?

The SIHA4N80E-GE3 supports a continuous gate-source voltage range of ±30 V, as defined in its Absolute Maximum Ratings. For reliable enhancement-mode operation, V_GS should be maintained between 2.0 V (minimum threshold) and 10 V (typical drive level for full R_DS(on) specification); exceeding +20 V risks gate oxide degradation, while negative V_GS beyond –10 V may induce parasitic turn-on in high-dv/dt environments.

SIHA4N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.27Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 622 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA4N80E-GE3 FAQ

1.How can I place an order for SIHA4N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA4N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA4N80E-GE3 reliable?

The price and inventory of SIHA4N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA4N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA4N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA4N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA4N80E-GE3?

SIHA4N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA4N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA4N80E-GE3?

For technical support, including SIHA4N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA4N80E-GE3 requirements.

6.How does Aetrix verify that SIHA4N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA4N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA4N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA4N80E-GE3?

All SIHA4N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA4N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA4N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHA4N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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