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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA5N80AE-GE3

Name: SIHA5N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHA5N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA5N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA5N80AE-GE3.pdf

Description:: E SERIES POWER MOSFET THIN-LEAD

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Product details

Overview

SIHA5N80AE-GE3 from Vishay Siliconix is an 800 V, 3.0 A N-channel enhancement-mode power MOSFET in a Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 1.17 Ω (typ. at V_GS = 10 V), Q_g = 11 nC (typ.), and avalanche-rated (E_AS = 17 mJ). It delivers low conduction and switching losses for high-voltage PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHA5N80AE-GE3 datasheet, SIHA5N80AE-GE3 pinout, SIHA5N80AE-GE3 application, or SIHA5N80AE-GE3 equivalent, this page provides verified electrical parameters, thermal resistance (R_thJC = 4.3 °C/W), body diode recovery characteristics (t_rr = 267 ns typ.), and validated alternatives for high-reliability 800 V power switching designs.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage hard-switching applications. Its low C_iss (321 pF) and ultra-low Q_gd/Q_g ratio (6/11 nC) reduce Miller-induced turn-off delay and improve dv/dt immunity (70 V/ns at T_J = 125 °C).

The integrated body diode supports unclamped inductive switching with t_rr = 267 ns (typ.) and Q_rr = 1.2 μC (typ.) at 25 °C, enabling robust operation in flyback and resonant topologies where diode recovery stress is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - Supports primary-side switching in 400 V DC bus PFC and offline SMPS with ≥2× safety margin
R_DS(on) typ.	1.17 Ω at V_GS = 10 V - Enables <1.8 W conduction loss at 1.5 A continuous drain current
Q_g max	16.5 nC - Reduces gate drive power requirement and enables use of low-current drivers (e.g., 100 mA peak)
E_AS	17 mJ - Rated for single-pulse unclamped inductive energy, supporting reliable overcurrent protection without external snubbers
R_thJC	4.3 °C/W - Allows 29 W dissipation with ≤125 °C junction rise above 25 °C case temperature under heatsink mounting
t_rr	267 ns typ. - Limits reverse recovery overshoot and EMI in discontinuous conduction mode (DCM) PFC boost stages
V_GS(th)	2–4 V - Ensures clean turn-on with standard 10 V gate drivers while avoiding spurious conduction from noise

Pinout & Package

SIHA5N80AE-GE3 uses the Thin-Lead TO-220 FULLPAK package (JEDEC TO-220AB variant), with drain-connected tab for direct heatsinking and lead-free/halogen-free construction per Vishay's material compliance standards.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; low Q_gs (3 nC) enables fast voltage ramp and reduced Miller plateau time
D (Drain)	High-voltage power output	Internally connected to metal tab; requires insulated mounting when heatsink is grounded
S (Source)	Power return and reference node	Provides common return path for gate drive and load current; low-inductance layout critical for dv/dt stability

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	12.9 Ω·nC - Balances conduction efficiency and switching speed for 65–100 kHz PFC designs
Avalanche energy rating	17 mJ single-pulse - Eliminates need for external clamping in transient overload conditions
Integrated Zener ESD protection	±30 V gate rating - Withstands HBM >2 kV without external gate protection components
Reduced C_oss (20 pF)	Minimizes capacitive turn-off loss and improves light-load efficiency in flyback converters
Thin-Lead TO-220 FULLPAK	Lower thermal resistance vs. standard TO-220 (R_thJC = 4.3 °C/W vs. typical 5.0–6.0 °C/W)

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost converter operating at 65–100 kHz with 400 V DC bus and 3 kW output. IC Role / Device Role / Timing Role: High-voltage switch controlling energy transfer into output capacitor; handles repetitive 800 V blocking and 3 A peak current. Use Value: Low Q_g and C_iss reduce gate drive loss and EMI generation, while 17 mJ E_AS ensures reliability during line surges.	Use Scenario: Front-end AC/DC conversion in 48 V telecom rectifiers with active PFC and hold-up time requirements. IC Role / Device Role / Timing Role: Primary-side switching element in continuous conduction mode (CCM) boost topology. Use Value: 1.17 Ω R_DS(on) limits conduction loss to <1.8 W at full load, supporting >95% efficiency targets.
Industrial Motor Drive Inverter	Renewable Energy Solar Inverter
Use Scenario: Three-phase IGBT/MOSFET inverter stage for 1–3 kW brushless DC motor control with regenerative braking. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge configuration handling 600–800 V DC link voltage. Use Value: Body diode t_rr = 267 ns enables controlled freewheeling during PWM dead-time, reducing shoot-through risk.	Use Scenario: DC/AC stage in string inverters converting 600–1000 V PV array output to grid-synchronized 230 V AC. IC Role / Device Role / Timing Role: High-side switch in two-level or three-level NPC inverter topology. Use Value: Avalanche rating and 800 V V_DS support safe operation under lightning-induced transients and DC-link overvoltage events.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost converter operating at 65–100 kHz with 400 V DC bus and 3 kW output.

IC Role / Device Role / Timing Role: High-voltage switch controlling energy transfer into output capacitor; handles repetitive 800 V blocking and 3 A peak current.

Use Value: Low Q_g and C_iss reduce gate drive loss and EMI generation, while 17 mJ E_AS ensures reliability during line surges.

Use Scenario: Front-end AC/DC conversion in 48 V telecom rectifiers with active PFC and hold-up time requirements.

IC Role / Device Role / Timing Role: Primary-side switching element in continuous conduction mode (CCM) boost topology.

Use Value: 1.17 Ω R_DS(on) limits conduction loss to <1.8 W at full load, supporting >95% efficiency targets.

Industrial Motor Drive Inverter

Renewable Energy Solar Inverter

Use Scenario: Three-phase IGBT/MOSFET inverter stage for 1–3 kW brushless DC motor control with regenerative braking.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge configuration handling 600–800 V DC link voltage.

Use Value: Body diode t_rr = 267 ns enables controlled freewheeling during PWM dead-time, reducing shoot-through risk.

Use Scenario: DC/AC stage in string inverters converting 600–1000 V PV array output to grid-synchronized 230 V AC.

IC Role / Device Role / Timing Role: High-side switch in two-level or three-level NPC inverter topology.

Use Value: Avalanche rating and 800 V V_DS support safe operation under lightning-induced transients and DC-link overvoltage events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK80ZFP	800 V, 4.5 A, R_DS(on) = 1.4 Ω, Q_g = 25 nC, TO-220FP package	Higher current rating but higher Q_g and R_DS(on); no avalanche rating specified	Preferred where higher ID is needed and gate drive capability allows higher Q_g
IXTH5N80L	800 V, 5.0 A, R_DS(on) = 1.2 Ω, Q_g = 22 nC, TO-247 package	Larger TO-247 package, higher thermal mass, no integrated Zener ESD protection	Chosen when board space permits larger footprint and higher peak current is required

Compared with STP5NK80ZFP and IXTH5N80L, SIHA5N80AE-GE3 offers lower gate charge and certified avalanche ruggedness in a compact Thin-Lead TO-220 FULLPAK, making it optimal for space-constrained, high-efficiency 800 V PFC and SMPS designs where EMI and thermal management are critical.

Availability

SIHA5N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIHA5N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHA5N80AE-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage, high-efficiency switching in server, telecom, and industrial power conversion systems where low FOM and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for SIHA5N80AE-GE3 at 100 °C case temperature?

The SIHA5N80AE-GE3 has a continuous drain current rating of 1.9 A at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within its 150 °C maximum junction temperature limit. The SIHA5N80AE-GE3 must be mounted on an appropriately sized heatsink to maintain case temperature below 100 °C under full load.

Does SIHA5N80AE-GE3 include integrated ESD protection on the gate terminal?

Yes, SIHA5N80AE-GE3 features an integrated Zener diode for gate-source ESD protection, rated for ±30 V gate-source voltage. This eliminates the need for external gate protection components in most applications and supports robust handling during assembly and operation. The SIHA5N80AE-GE3 complies with JEDEC JS-001 HBM standards, providing >2 kV ESD immunity without additional circuitry.

What is the typical reverse recovery time (t_rr) of the body diode in SIHA5N80AE-GE3?

The typical reverse recovery time (t_rr) of the intrinsic body diode in SIHA5N80AE-GE3 is 267 ns at T_J = 25 °C, I_F = 2 A, di/dt = 100 A/μs, and V_R = 25 V. This parameter is critical for minimizing voltage overshoot and EMI in hard-switched topologies. The SIHA5N80AE-GE3's t_rr is confirmed in the device's official datasheet (Document Number: 92373, Rev. A).

Can SIHA5N80AE-GE3 be used in avalanche mode for overvoltage protection?

Yes, SIHA5N80AE-GE3 is explicitly rated for single-pulse avalanche energy (E_AS) of 17 mJ under defined test conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 1.1 A). This rating allows controlled energy absorption during transient overvoltage events. However, repeated avalanche operation is not recommended, and the SIHA5N80AE-GE3 should be applied within its specified absolute maximum ratings for long-term reliability.

What is the thermal resistance from junction to case (R_thJC) for SIHA5N80AE-GE3?

The maximum junction-to-case (drain) thermal resistance (R_thJC) for SIHA5N80AE-GE3 is 4.3 °C/W, measured from the silicon die to the metal drain tab. This value enables efficient heat transfer to an external heatsink and supports up to 29 W of power dissipation at T_C = 25 °C. The SIHA5N80AE-GE3's Thin-Lead TO-220 FULLPAK construction contributes to this low thermal resistance relative to standard TO-220 packages.

SIHA5N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.35Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 321 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 29W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA5N80AE-GE3 FAQ

1.How can I place an order for SIHA5N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA5N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA5N80AE-GE3 reliable?

The price and inventory of SIHA5N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA5N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA5N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA5N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA5N80AE-GE3?

SIHA5N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA5N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA5N80AE-GE3?

For technical support, including SIHA5N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA5N80AE-GE3 requirements.

6.How does Aetrix verify that SIHA5N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA5N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA5N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA5N80AE-GE3?

All SIHA5N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA5N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA5N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHA5N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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