Vishay Siliconix SIHA690N60E-GE3

Overview

SIHA690N60E-GE3 from Vishay Siliconix is a 600 V, 4.3 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring 0.60 Ω R_DS(on) at V_GS = 10 V, 12 nC total gate charge, and 9 mJ single-pulse avalanche energy - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server power systems.

For engineers reviewing the SIHA690N60E-GE3 datasheet, SIHA690N60E-GE3 pinout, SIHA690N60E-GE3 application, or SIHA690N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced C_oss(er) of 17 pF, 70 V/ns dv/dt rating at T_J = 125 °C, and integrated body diode with 146 ns typical reverse recovery time - all critical for hard-switched 480 V DC bus designs.

Technical Context

This E-series MOSFET employs 4th-generation superjunction technology to minimize conduction and switching losses simultaneously. Its low effective output capacitance (C_oss(er) = 17 pF) enables faster voltage transitions under high dv/dt stress, while the 0.73 V/°C V_DS temperature coefficient ensures stable breakdown behavior across -55 to +150 °C junction range.

The device integrates a robust body diode rated for 6.4 A continuous source-drain current and 11 A pulsed current, with controlled reverse recovery (Q_rr = 1.0–2.0 μC, t_rr = 146–292 ns) to reduce switching noise and cross-conduction risk in bridge topologies. Gate threshold voltage (3.0–5.0 V) and ±30 V V_GS rating support standard 10 V gate drivers without level-shifting.

Key Specifications

Pinout & Package

SIHA690N60E-GE3 uses a Thin-Lead TO-220 FULLPAK package (8.3–8.7 mm width, 14.7–15.3 mm length, 13.4–13.8 mm height) with drain-connected tab for direct heatsinking and lead-free/halogen-free construction per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.

Compared with STP6NK60ZFP and IXFH12N60P, SIHA690N60E-GE3 delivers superior FOM (7.2 vs. 10.5 and 14.3 Ω·nC), smaller TO-220 FULLPAK footprint, and verified 9 mJ UIS rating - making it the preferred choice for compact, high-reliability 4–5 A 600 V switching stages.

Availability

SIHA690N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHA690N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and ruggedness.

The E Series Power MOSFET product line targets high-frequency, high-efficiency power conversion in telecom, computing, and industrial systems - engineered for low FOM, enhanced dv/dt immunity, and robust avalanche capability.

FAQ

What is the maximum continuous drain current rating for SIHA690N60E-GE3 at 100 °C case temperature?

The SIHA690N60E-GE3 has a continuous drain current rating of 2.7 A at T_C = 100 °C, derated linearly from 4.3 A at 25 °C using a 0.23 W/°C factor. This value reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and must be validated against actual board-level thermal resistance in the target application layout.

Does SIHA690N60E-GE3 support logic-level gate drive?

No, SIHA690N60E-GE3 is not a logic-level MOSFET. Its gate threshold voltage ranges from 3.0 V to 5.0 V, and it is specified for R_DS(on) at V_GS = 10 V. Reliable enhancement-mode operation requires ≥10 V gate drive; 5 V logic signals will not fully turn on the device and may cause excessive conduction loss or thermal runaway.

What is the significance of the "-GE3" suffix in SIHA690N60E-GE3?

"-GE3" denotes Vishay's lead (Pb)-free and halogen-free packaging per JEDEC J-STD-020, with matte tin-plated leads and RoHS-compliant materials. It confirms compliance with environmental regulations and specifies the moisture sensitivity level (MSL) and reflow profile required for surface-mount assembly - though SIHA690N60E-GE3 remains through-hole mounted in TO-220 FULLPAK form.

How does the body diode performance of SIHA690N60E-GE3 compare to discrete ultrafast diodes in PFC applications?

The SIHA690N60E-GE3 body diode has a typical reverse recovery time of 146 ns and Q_rr of 1.0–2.0 μC at 25 °C, which is slower than dedicated ultrafast diodes (<50 ns), but sufficient for CCM PFC operation at ≤100 kHz. Its integrated nature eliminates layout parasitics and reduces component count, though discrete diodes remain preferable for critical high-frequency or zero-crossing-sensitive designs.

Can SIHA690N60E-GE3 be used in parallel configurations for higher current handling?

Yes, SIHA690N60E-GE3 supports paralleling due to its positive R_DS(on) temperature coefficient (0.73 V/°C V_DS shift implies increasing on-resistance with temperature), promoting current sharing. However, matched gate drive layout, individual gate resistors, and thermal coupling between devices are essential to prevent current imbalance and ensure reliability in parallel operation.