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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA6N65E-E3

Name: SIHA6N65E-E3
Brand: Vishay Siliconix
SKU: SIHA6N65E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA6N65E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA6N65E-E3.pdf

Description:: MOSFET N-CHANNEL 650V 7A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA6N65E-E3 from Vishay Siliconix is a 650 V, 7 A N-channel power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring 0.6 Ω R_DS(on) at V_GS = 10 V, 48 nC total gate charge, and 56 mJ single-pulse avalanche energy. It serves as a high-voltage switching element in PFC and SMPS primary-side power stages.

For engineers reviewing the SIHA6N65E-E3 datasheet, SIHA6N65E-E3 pinout, SIHA6N65E-E3 application, or SIHA6N65E-E3 equivalent, key selection criteria include its low Q_g × R_DS(on) figure-of-merit, robust UIS rating, and thermal performance with R_thJC = 4.0 °C/W for high-efficiency, high-reliability power conversion designs.

Technical Context

This MOSFET employs planar silicon technology optimized for hard-switched 650 V applications, with a gate threshold voltage (V_GS(th)) of 2–4 V and specified dV/dt immunity of 37 V/ns at T_J = 125 °C. Its body diode exhibits t_rr = 118–474 ns and Q_rr = 2.2 μC under standardized 100 A/μs recovery conditions.

The device is characterized for linear derating above 25 °C case temperature (0.63 W/°C), supports repetitive ID up to 5 A at T_C = 100 °C, and maintains V_DS breakdown ≥650 V across –55 to +150 °C junction range with positive temperature coefficient for current sharing in parallel configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Supports 400 V AC input rectified systems with ≥20 % margin for surge and ringing
R_DS(on) max	0.6 Ω at V_GS = 10 V - Enables <1.8 W conduction loss at 3 A DC, suitable for continuous PFC operation
Q_g max	48 nC - Reduces gate drive power and enables efficient 100–300 kHz switching in hard-switched topologies
E_AS	56 mJ - Withstands unclamped inductive energy during fault events without failure in SMPS primary circuits
I_D cont. (T_C = 25 °C)	7 A - Delivers full rated current with standard heatsinking and forced-air cooling
R_thJC max	4.0 °C/W - Allows precise junction temperature estimation and thermal design with direct case mounting
C_iss typ.	820 pF - Low input capacitance reduces Miller effect and improves turn-on control stability

Pinout & Package

Thin-Lead TO-220 FULLPAK package with isolated drain tab, 3-pin configuration, and 14.7–15.3 mm lead length (d1). Mounting torque: 0.6 Nm for M3 screw.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-voltage power output / heat sink interface	Electrically connected to package backside; requires insulating washer if mounted to grounded heatsink
Source	Power return / reference node for gate drive	Serves as common source for internal channel and body diode; defines local ground for gate driver supply
Gate	Control input for channel conduction	High-impedance MOS gate requiring <100 nA leakage current; sensitive to ESD and overvoltage beyond ±30 V

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	0.6 Ω × 48 nC = 28.8 Ω·nC - Minimizes combined switching and conduction losses in high-frequency PFC stages
Avalanche-rated (UIS)	56 mJ single-pulse rating - Eliminates need for external snubbers in inductive load switching and fault transients
Ultra-low Q_gd/Q_g ratio	11/48 ≈ 23 % - Reduces Miller plateau duration and improves controllability during hard switching
Body diode Q_rr	2.2 μC - Enables reliable synchronous rectification or freewheeling in LLC and phase-shifted topologies
Lead (Pb)-free & halogen-free	E3 suffix indicates RoHS-compliant termination - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for reflow assembly

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Active clamp forward or two-transistor forward converter in 1U server PSU with 3.3/5/12 V outputs. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 380 V DC bus with 100–200 kHz switching. Use Value: 650 V rating and 56 mJ E_AS ensure robustness against reflected spikes during transformer reset and short-circuit events.	Use Scenario: Boost stage in string-level solar microinverters converting 30–60 V DC to 400 V DC bus. IC Role / Device Role / Timing Role: High-efficiency boost switch operating at 150 kHz with zero-voltage switching assistance. Use Value: Low Q_g (48 nC) and C_iss (820 pF typ.) reduce gate drive losses and improve ZVS soft-start reliability.
Industrial Motor Drive	Fluorescent Ballast
Use Scenario: Inverter leg switch in 0.75 kW HVAC blower drive using 3-phase IGBT/MOSFET hybrid topology. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge configuration controlling motor phase voltage with 10–20 kHz PWM. Use Value: R_thJC = 4.0 °C/W enables direct heatsink mounting and stable thermal management under continuous 5 A load at 100 °C case.	Use Scenario: Resonant half-bridge switch in electronic fluorescent ballast driving 36–40 W lamps at 40–60 kHz. IC Role / Device Role / Timing Role: High-frequency switching element sustaining repeated 650 V blocking and fast turn-off transitions. Use Value: 37 V/ns dV/dt rating prevents false triggering during rapid voltage transitions across lamp ignition pulses.

Server Power Supply

Solar PV Inverter

Use Scenario: Active clamp forward or two-transistor forward converter in 1U server PSU with 3.3/5/12 V outputs.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 380 V DC bus with 100–200 kHz switching.

Use Value: 650 V rating and 56 mJ E_AS ensure robustness against reflected spikes during transformer reset and short-circuit events.

Use Scenario: Boost stage in string-level solar microinverters converting 30–60 V DC to 400 V DC bus.

IC Role / Device Role / Timing Role: High-efficiency boost switch operating at 150 kHz with zero-voltage switching assistance.

Use Value: Low Q_g (48 nC) and C_iss (820 pF typ.) reduce gate drive losses and improve ZVS soft-start reliability.

Industrial Motor Drive

Fluorescent Ballast

Use Scenario: Inverter leg switch in 0.75 kW HVAC blower drive using 3-phase IGBT/MOSFET hybrid topology.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge configuration controlling motor phase voltage with 10–20 kHz PWM.

Use Value: R_thJC = 4.0 °C/W enables direct heatsink mounting and stable thermal management under continuous 5 A load at 100 °C case.

Use Scenario: Resonant half-bridge switch in electronic fluorescent ballast driving 36–40 W lamps at 40–60 kHz.

IC Role / Device Role / Timing Role: High-frequency switching element sustaining repeated 650 V blocking and fast turn-off transitions.

Use Value: 37 V/ns dV/dt rating prevents false triggering during rapid voltage transitions across lamp ignition pulses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 6 A, R_DS(on) = 0.75 Ω, Q_g = 32 nC, TO-220FP package	Lower voltage rating and higher R_DS(on); lower gate charge but reduced avalanche capability (E_AS = 25 mJ)	Acceptable for 230 V AC-input SMPS where 600 V margin suffices and lower Q_g prioritizes switching efficiency over ruggedness
IXTH6N65X2	650 V, 6.2 A, R_DS(on) = 0.65 Ω, Q_g = 29 nC, TO-247 package	Higher package thermal resistance (R_thJC = 1.2 °C/W), larger footprint, no integrated avalanche rating	Better for ultra-high-frequency designs needing minimal Q_g, but requires larger heatsink and lacks UIS certification for industrial fault tolerance

Compared with STP6NK60ZFP and IXTH6N65X2, SIHA6N65E-E3 delivers superior avalanche ruggedness and thermal efficiency in compact TO-220 FULLPAK, making it optimal for space-constrained, high-reliability 650 V PFC and SMPS where both conduction loss and fault survival are critical.

Availability

SIHA6N65E-E3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHA6N65E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The E Series power MOSFETs, including SIHA6N65E-E3, are engineered for high-voltage, high-efficiency switching in telecom, server, and renewable energy power conversion systems where low FOM and avalanche robustness are essential.

FAQ

What is the maximum continuous drain current for SIHA6N65E-E3 at 100 °C case temperature?

The SIHA6N65E-E3 supports a continuous drain current of 5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within its 31 W maximum power dissipation envelope when properly heatsinked.

Does SIHA6N65E-E3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHA6N65E-E3 is fully rated for single-pulse unclamped inductive switching (UIS) with E_AS = 56 mJ. Testing follows standard JEDEC conditions: V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2 A. This rating is validated per Vishay's qualification standards and documented in datasheet revision C.

What is the gate-source threshold voltage range for SIHA6N65E-E3, and why does it matter in circuit design?

The gate-source threshold voltage (V_GS(th)) for SIHA6N65E-E3 is 2–4 V at T_J = 25 °C. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise or leakage. Designers must maintain V_GS > 4 V to guarantee full enhancement and avoid linear-mode operation that increases power dissipation.

Can SIHA6N65E-E3 be used in place of a logic-level MOSFET in 5 V gate drive applications?

No, SIHA6N65E-E3 is not a logic-level MOSFET. Its V_GS(th) minimum is 2 V, but R_DS(on) is only guaranteed at V_GS = 10 V. At 5 V gate drive, the device operates in weak inversion with significantly elevated R_DS(on) (>2 Ω), leading to excessive conduction loss and thermal runaway. A dedicated logic-level part like SiHF6N60E is required for 5 V drive.

What is the reverse recovery charge (Q_rr) of the body diode in SIHA6N65E-E3, and how does it affect hard-switched topologies?

The body diode Q_rr of SIHA6N65E-E3 is 2.2 μC under standard test conditions (T_J = 25 °C, I_F = 3 A, dI/dt = 100 A/μs, V_R = 25 V). In hard-switched converters, this value directly contributes to switching loss and EMI during commutation; designers must account for it in snubber sizing and layout to minimize voltage overshoot and oscillation during diode turn-off.

SIHA6N65E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1640 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA6N65E-E3 FAQ

1.How can I place an order for SIHA6N65E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA6N65E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA6N65E-E3 reliable?

The price and inventory of SIHA6N65E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA6N65E-E3 is usually 5 days.

3.What payment methods are accepted for SIHA6N65E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA6N65E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA6N65E-E3?

SIHA6N65E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA6N65E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA6N65E-E3?

For technical support, including SIHA6N65E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA6N65E-E3 requirements.

6.How does Aetrix verify that SIHA6N65E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHA6N65E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA6N65E-E3 meets industry standards.

7.What is the process for return or replacement of SIHA6N65E-E3?

All SIHA6N65E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA6N65E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA6N65E-E3 part is unused and in its original packaging.

Return procedure for SIHA6N65E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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