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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA6N65E-GE3

Name: SIHA6N65E-GE3
Brand: Vishay Siliconix
SKU: SIHA6N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA6N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA6N65E-GE3.pdf

Description:: N-CHANNEL 650V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA6N65E-GE3 from Vishay Siliconix is a 650 V, 7 A N-channel power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.6 Ω at V_GS = 10 V, Q_g = 48 nC, and avalanche-rated E_AS = 56 mJ - optimized for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHA6N65E-GE3 datasheet, SIHA6N65E-GE3 pinout, SIHA6N65E-GE3 application, or SIHA6N65E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, 650 V blocking capability, and robust UIS performance - critical for hard-switched industrial and renewable energy inverters.

Technical Context

This device employs planar stripe silicon technology with optimized gate oxide and body diode design to achieve balanced conduction and switching losses. Its C_iss = 820 pF (typ), C_oss = 40 pF (typ), and Cr_ss = 4 pF (typ) support fast, low-noise turn-on/turn-off in continuous conduction mode (CCM) PFC circuits.

The integral body diode delivers t_rr = 237 ns (typ) and Q_rr = 2.2 μC (typ) at T_J = 25 °C, enabling reliable operation in bridge-leg configurations without external anti-parallel diodes in moderate-frequency (<100 kHz) applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus designs with ≥30 % voltage margin for surge and ringing
R_DS(on) max	0.6 Ω at V_GS = 10 V - enables ≤2.7 W conduction loss at 3 A RMS in PFC boost stage
Q_g max	48 nC - reduces gate drive power and allows use of low-power drivers like UCC27531
E_AS	56 mJ - withstands unclamped inductive switching events in motor drive H-bridges
T_J range	–55 °C to +150 °C - qualified for industrial ambient environments up to 85 °C with derated current
R_thJC max	4.0 °C/W - supports 31 W dissipation with ≤120 °C case temperature using standard heatsink
V_GS(th)	2–4 V - ensures clean turn-on with 5 V logic-level gate drivers without risk of partial enhancement

Pinout & Package

Thin-Lead TO-220 FULLPAK package: isolated drain tab (D), through-hole mounting, 13.6 mm height, 8.5 mm width, 10.0 mm depth; thermal pad soldered to PCB copper for enhanced heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-side power switch node	Electrically connected to metal tab - must be thermally and electrically tied to heatsink or ground plane
Source	Return path for load current	Low-impedance source terminal; referenced to driver ground; carries full load current
Gate	Control input	High-impedance MOS control node; requires <100 nF local decoupling and series R_g ≈ 9.1 Ω for optimal dV/dt control

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	28.8 Ω·nC - minimizes combined conduction + switching loss in 65–100 kHz PFC stages
Avalanche energy rating	56 mJ single-pulse - eliminates need for external clamping in flyback or resonant LLC primary switches
Ultra-low Q_gd/Q_g ratio	22.9 % (11/48 nC) - improves Miller immunity and enables stable operation with high dV/dt (>30 V/ns)
Body diode softness factor	t_rr/Q_rr = 108 ns/μC - reduces EMI and voltage overshoot during commutation in half-bridge topologies
Pb-free & halogen-free	Complies with JEDEC J-STD-609 Class 1A and RoHS Directive 2011/65/EU - suitable for green manufacturing

Applications

Server Power Supply PFC Stage	Solar PV Inverter DC-DC Boost
Use Scenario: Active PFC front-end in 1–3 kW rack-mounted server PSUs operating at 65–100 kHz. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter. Use Value: 0.6 Ω R_DS(on) and 48 nC Q_g enable >98.2 % efficiency at full load while maintaining thermal margin below 110 °C junction.	Use Scenario: DC-DC boost stage in string inverters converting 300–1000 V PV array output to 1200 V DC link. IC Role / Device Role / Timing Role: Main switching element in interleaved boost converter with 50 kHz switching frequency. Use Value: 650 V V_DS rating and 56 mJ E_AS ensure reliability under lightning-induced transients and rapid MPPT voltage changes.
Induction Heating Half-Bridge	Industrial Battery Charger Output Stage
Use Scenario: Resonant half-bridge in 20–50 kHz induction cooktops and heating systems. IC Role / Device Role / Timing Role: Low-side switch with synchronous rectification via body diode commutation. Use Value: 237 ns t_rr and soft recovery reduce dv/dt stress on gate driver and minimize EMI filter size by 35 %.	Use Scenario: Primary-side switch in 3–10 kW off-board EV battery chargers with dual-phase interleaved topology. IC Role / Device Role / Timing Role: Hard-switched MOSFET in phase-shifted full-bridge configuration. Use Value: R_thJC = 4.0 °C/W and 31 W P_D allow direct-mount heatsinking without thermal interface material, simplifying mechanical design.

Server Power Supply PFC Stage

Solar PV Inverter DC-DC Boost

Use Scenario: Active PFC front-end in 1–3 kW rack-mounted server PSUs operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter.

Use Value: 0.6 Ω R_DS(on) and 48 nC Q_g enable >98.2 % efficiency at full load while maintaining thermal margin below 110 °C junction.

Use Scenario: DC-DC boost stage in string inverters converting 300–1000 V PV array output to 1200 V DC link.

IC Role / Device Role / Timing Role: Main switching element in interleaved boost converter with 50 kHz switching frequency.

Use Value: 650 V V_DS rating and 56 mJ E_AS ensure reliability under lightning-induced transients and rapid MPPT voltage changes.

Induction Heating Half-Bridge

Industrial Battery Charger Output Stage

Use Scenario: Resonant half-bridge in 20–50 kHz induction cooktops and heating systems.

IC Role / Device Role / Timing Role: Low-side switch with synchronous rectification via body diode commutation.

Use Value: 237 ns t_rr and soft recovery reduce dv/dt stress on gate driver and minimize EMI filter size by 35 %.

Use Scenario: Primary-side switch in 3–10 kW off-board EV battery chargers with dual-phase interleaved topology.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in phase-shifted full-bridge configuration.

Use Value: R_thJC = 4.0 °C/W and 31 W P_D allow direct-mount heatsinking without thermal interface material, simplifying mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, R_DS(on) = 0.75 Ω, Q_g = 34 nC, TO-220FP package	Lower voltage rating limits use to ≤380 V AC-input PFC; lower Q_g favors higher-frequency operation	Prefer when cost sensitivity outweighs 650 V margin requirement and layout allows TO-220FP footprint
IXTH6N65X2	650 V, R_DS(on) = 0.65 Ω, Q_g = 27 nC, TO-247AC package	Higher thermal resistance (R_thJC = 1.2 °C/W) but larger die area improves ruggedness; TO-247 requires more board space	Choose when higher avalanche robustness and lower gate drive loss are prioritized over compact packaging

Compared with STP6NK60ZFP and IXTH6N65X2, SIHA6N65E-GE3 offers the best balance of 650 V rating, low-profile TO-220 FULLPAK packaging, and FOM-optimized switching for space-constrained industrial power modules requiring ≤13.8 mm height.

Availability

SIHA6N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHA6N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching in telecom, industrial, and renewable energy systems - emphasizing low FOM, avalanche ruggedness, and thermally efficient packaging.

FAQ

What is the maximum continuous drain current for SIHA6N65E-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHA6N65E-GE3 is 5 A at T_C = 100 °C, per the Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within R_thJC = 4.0 °C/W and T_J(max) = 150 °C. At T_C = 25 °C, the rating rises to 7 A. SIHA6N65E-GE3 must be mounted on a heatsink or copper pour meeting minimum thermal requirements.

Does SIHA6N65E-GE3 have a fully rated avalanche capability, and what is its test condition?

Yes, SIHA6N65E-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 56 mJ, tested per conditions: V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, I_AS = 2 A. This rating is validated per JEDEC JESD24-11 and qualifies SIHA6N65E-GE3 for unclamped inductive switching in motor drives and flyback converters without external snubbers.

What is the gate-source threshold voltage range for SIHA6N65E-GE3, and how does it affect drive compatibility?

The gate-source threshold voltage (V_GS(th)) for SIHA6N65E-GE3 is specified from 2 V to 4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental conduction from noise or leakage. SIHA6N65E-GE3 is not a logic-level device; it requires ≥8 V V_GS for full R_DS(on) specification, making it compatible with UC384x, UCC27531, and IR2110-based drivers.

How does the body diode performance of SIHA6N65E-GE3 compare to standard FRDs in PFC applications?

SIHA6N65E-GE3's body diode exhibits t_rr = 237 ns (typ) and Q_rr = 2.2 μC (typ) at T_J = 25 °C, with soft recovery (IRRM = 16 A). While slower than dedicated fast recovery diodes, its integrated nature eliminates layout parasitics and reduces component count in interleaved PFC. For critical high-frequency designs (>150 kHz), an external SiC Schottky may be preferred - but SIHA6N65E-GE3 remains viable for 65–100 kHz CCM PFC.

Is SIHA6N65E-GE3 suitable for use in automotive-grade power supplies?

SIHA6N65E-GE3 is not AEC-Q101 qualified and is not recommended for automotive powertrain or safety-critical applications. It is designed and tested for industrial, telecom, and renewable energy use cases per JEDEC standards. For automotive auxiliary power supplies (e.g., infotainment DC-DC), qualification testing per AEC-Q101 would be required. SIHA6N65E-GE3 remains appropriate for non-automotive EV charging infrastructure and grid-tied inverters.

SIHA6N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1640 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA6N65E-GE3 FAQ

1.How can I place an order for SIHA6N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA6N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA6N65E-GE3 reliable?

The price and inventory of SIHA6N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA6N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA6N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA6N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA6N65E-GE3?

SIHA6N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA6N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA6N65E-GE3?

For technical support, including SIHA6N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA6N65E-GE3 requirements.

6.How does Aetrix verify that SIHA6N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA6N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA6N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA6N65E-GE3?

All SIHA6N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA6N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA6N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHA6N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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