Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA6N80AE-GE3

Name: SIHA6N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHA6N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHA6N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA6N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 5A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:816

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHA6N80AE-GE3 from Vishay Siliconix is an 800 V, 5 A N-channel power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.826 Ω (typ) at V_GS = 10 V, Q_g = 15 nC (typ), and E_AS = 20.3 mJ - optimized for high-voltage switching in telecom PFC stages and industrial motor drives.

For engineers reviewing the SIHA6N80AE-GE3 datasheet, SIHA6N80AE-GE3 pinout, SIHA6N80AE-GE3 application, or SIHA6N80AE-GE3 equivalent, this device delivers low conduction loss with ultra-low gate charge and avalanche-rated ruggedness - critical for reliable operation in 400–800 V DC-link SMPS and induction heating inverters.

Technical Context

This MOSFET employs planar vertical DMOS technology with integrated Zener-protected gate, enabling robust ±30 V gate drive tolerance and 100 V/ns dv/dt immunity at T_J = 125 °C. Its low C_iss (422 pF) and C_oss (24 pF) reduce switching losses in hard-switched topologies.

The device supports unclamped inductive switching (UIS) up to 20.3 mJ and features a body diode with t_rr = 285 ns (typ) and Q_rr = 1.7 μC - suitable for synchronous rectification and freewheeling in high-frequency PFC and welding power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports 640 V DC-link operation with 25 % margin for voltage transients in telecom and industrial SMPS
R_DS(on) (typ)	0.826 Ω at V_GS = 10 V, I_D = 2 A - enables <1.7 W conduction loss at 5 A continuous drain current
Q_g (typ)	15 nC - reduces gate drive power and allows use of lower-cost 1–2 W gate drivers in 100–300 kHz designs
E_AS	20.3 mJ - ensures single-pulse avalanche survivability during overvoltage events without external snubbers
C_iss	422 pF - lowers Miller-induced turn-on risk and improves noise immunity in high-dv/dt environments
t_r/t_f	10/20 ns (typ) - supports fast switching with minimal overlap loss in hard-switched converters
T_J range	–55 to +150 °C - qualified for under-hood industrial and server PSU applications with thermal cycling stress

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead-free/halogen-free); dimensions per Vishay Doc. #62649: D = 8.3–8.7 mm, d1 = 14.7–15.3 mm, L = 13.4–13.8 mm, mounting torque = 0.6 N·m.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side power terminal	Internally connected to metal tab - requires electrically isolated heatsink mounting; handles full 800 V blocking and 5 A conduction
Source (S)	Power return and reference node	Low-inductance source path for gate drive loop; ties to PCB ground plane to minimize switching noise coupling
Gate (G)	Control input	Zener-protected MOSFET gate; accepts 10 V logic-level drive; sensitive to ESD - requires series gate resistor (R_g = 9.1 Ω typical)

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	12.4 Ω·nC (0.826 Ω × 15 nC) - balances conduction and switching loss for optimal efficiency in 100–250 kHz PFC stages
Avalanche energy rating	20.3 mJ single-pulse - eliminates need for external clamping in inductive load switching (e.g., welder primary side)
Integrated Zener ESD protection	±30 V gate rating - prevents gate oxide failure during handling and board assembly without external TVS
Low effective output capacitance	C_oss(tr) = 92 pF - reduces turn-off energy loss and improves light-load efficiency in resonant LLC topologies
Body diode performance	t_rr = 285 ns, Q_rr = 1.7 μC - minimizes reverse recovery loss and EMI in freewheeling paths of motor drives

Applications

Server Power Factor Correction	Industrial Induction Heating
Use Scenario: Active PFC boost stage in 1–3 kW telecom/server PSUs operating at 100–250 kHz with 400 V DC-link. IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost converter. Use Value: Low Q_g and R_DS(on) reduce total losses by ~12 % vs. legacy 800 V MOSFETs, improving system efficiency to >96 % at full load.	Use Scenario: Half-bridge inverter driving 20–100 kHz resonant tank for metal heating in industrial furnaces. IC Role / Device Role / Timing Role: Main switching device handling repetitive 800 V blocking and 5 A peak current. Use Value: Avalanche rating and 150 °C T_J rating enable reliable operation under short-circuit and thermal overload conditions without derating.
Fluorescent Ballast Lighting	Battery Charger Output Stage
Use Scenario: Resonant inverter in electronic ballasts for high-intensity discharge (HID) lamps. IC Role / Device Role / Timing Role: Switching transistor in series-resonant topology with soft-start and dimming control. Use Value: Low C_iss and fast t_r/t_f support stable zero-voltage switching (ZVS) across wide dimming range.	Use Scenario: Primary-side switch in 600–800 V DC-output battery chargers for EV infrastructure and industrial traction. IC Role / Device Role / Timing Role: Hard-switched flyback or forward converter switch with 640 V nominal bus. Use Value: 20.3 mJ E_AS withstands repeated output short-circuits and line surges, extending field reliability beyond 10 years.

Server Power Factor Correction

Industrial Induction Heating

Use Scenario: Active PFC boost stage in 1–3 kW telecom/server PSUs operating at 100–250 kHz with 400 V DC-link.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost converter.

Use Value: Low Q_g and R_DS(on) reduce total losses by ~12 % vs. legacy 800 V MOSFETs, improving system efficiency to >96 % at full load.

Use Scenario: Half-bridge inverter driving 20–100 kHz resonant tank for metal heating in industrial furnaces.

IC Role / Device Role / Timing Role: Main switching device handling repetitive 800 V blocking and 5 A peak current.

Use Value: Avalanche rating and 150 °C T_J rating enable reliable operation under short-circuit and thermal overload conditions without derating.

Fluorescent Ballast Lighting

Battery Charger Output Stage

Use Scenario: Resonant inverter in electronic ballasts for high-intensity discharge (HID) lamps.

IC Role / Device Role / Timing Role: Switching transistor in series-resonant topology with soft-start and dimming control.

Use Value: Low C_iss and fast t_r/t_f support stable zero-voltage switching (ZVS) across wide dimming range.

Use Scenario: Primary-side switch in 600–800 V DC-output battery chargers for EV infrastructure and industrial traction.

IC Role / Device Role / Timing Role: Hard-switched flyback or forward converter switch with 640 V nominal bus.

Use Value: 20.3 mJ E_AS withstands repeated output short-circuits and line surges, extending field reliability beyond 10 years.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	R_DS(on) = 0.95 Ω (max), Q_g = 24 nC, TO-220FP package (shorter leads, no FULLPAK thermal enhancement)	Higher conduction loss and slower switching; less suitable for high-frequency PFC above 150 kHz	Lower cost alternative where thermal margin is available and switching frequency ≤ 120 kHz
IXTH6N80L2	R_DS(on) = 0.85 Ω (typ), Q_g = 18 nC, TO-247 package with higher R_thJC (0.8 °C/W vs. 4.2 °C/W)	Superior R_DS(on) but larger footprint and inferior thermal resistance - requires larger heatsink	Better for high-current, low-frequency (<80 kHz) applications where board space permits TO-247 mounting

Compared with STP8NK80ZFP and IXTH6N80L2, SIHA6N80AE-GE3 offers the best balance of low gate charge, enhanced thermal performance via FULLPAK construction, and proven avalanche ruggedness - making it optimal for compact, high-efficiency 200–300 kHz industrial and telecom power supplies.

Availability

SIHA6N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, industrial induction heating systems, and fluorescent ballast lighting requiring stable component supply and long-term lifecycle assurance.

Supply support for SIHA6N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and computing applications.

The SIHA6N80AE-GE3 belongs to Vishay's E Series high-voltage MOSFET family, engineered specifically for efficiency-critical, high-reliability switching in 600–800 V power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHA6N80AE-GE3 at 100 °C case temperature?

The SIHA6N80AE-GE3 has a continuous drain current rating of 3.2 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 5 A rating at T_C = 25 °C, with a linear derating factor of 0.24 W/°C. Designers must ensure heatsink design maintains case temperature ≤ 100 °C for sustained 3.2 A operation.

Does SIHA6N80AE-GE3 include integrated ESD protection on the gate terminal?

Yes, the SIHA6N80AE-GE3 integrates a Zener diode for gate-source ESD protection, enabling a ±30 V gate-source voltage rating. This eliminates the need for external gate protection components in most applications and enhances robustness during PCB assembly and system integration - confirmed in the Features section and Absolute Maximum Ratings table of Vishay Document #92298.

What is the typical reverse recovery time (t_rr) of the body diode in SIHA6N80AE-GE3?

The typical reverse recovery time (t_rr) of the integral body diode in SIHA6N80AE-GE3 is 285 ns, measured at T_J = 25 °C, I_F = I_S = 3 A, di/dt = 100 A/μs, and V_R = 25 V. This value is specified in the "Drain-Source Body Diode Characteristics" section and supports efficient freewheeling in high-frequency motor drives and SMPS.

Can SIHA6N80AE-GE3 be used in avalanche-mode operation, and what is its rated single-pulse energy?

Yes, SIHA6N80AE-GE3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) capability of 20.3 mJ, tested under V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 1.2 A. This rating is explicitly stated in the Absolute Maximum Ratings table and enables safe operation during transient overvoltage events without external snubbers.

What is the thermal resistance from junction to case (R_thJC) for SIHA6N80AE-GE3?

The maximum junction-to-case (drain) thermal resistance (R_thJC) for SIHA6N80AE-GE3 is 4.2 °C/W, as listed in the Thermal Resistance Ratings table. This low value is enabled by the Thin-Lead TO-220 FULLPAK package's enhanced thermal path from die to metal tab, supporting higher power density than standard TO-220 variants.

SIHA6N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Cut Tape (CT)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 422 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA6N80AE-GE3 FAQ

1.How can I place an order for SIHA6N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA6N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA6N80AE-GE3 reliable?

The price and inventory of SIHA6N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA6N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA6N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA6N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA6N80AE-GE3?

SIHA6N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA6N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA6N80AE-GE3?

For technical support, including SIHA6N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA6N80AE-GE3 requirements.

6.How does Aetrix verify that SIHA6N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA6N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA6N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA6N80AE-GE3?

All SIHA6N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA6N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA6N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHA6N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …