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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA6N80E-GE3

Name: SIHA6N80E-GE3
Brand: Vishay Siliconix
SKU: SIHA6N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA6N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA6N80E-GE3.pdf

Description:: MOSFET N-CH 800V 5.4A TO220

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Product details

Overview

SIHA6N80E-GE3 from Vishay Siliconix is an 800 V, 5.4 A N-channel enhancement-mode power MOSFET in a thin-lead TO-220 FULLPAK package, featuring 0.82 Ω R_DS(on) at V_GS = 10 V, 44 nC total gate charge, and 95 mJ single-pulse avalanche energy - optimized for high-voltage switching in telecom PFC and solar PV inverters.

For engineers reviewing the SIHA6N80E-GE3 datasheet, SIHA6N80E-GE3 pinout, SIHA6N80E-GE3 application, or SIHA6N80E-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance (R_thJC = 4.0 °C/W), body diode recovery characteristics (t_rr = 282 ns), and real-world design implications for hard-switched SMPS topologies.

Technical Context

This MOSFET employs planar silicon technology with optimized charge distribution to achieve low figure-of-merit (R_DS(on) × Q_g = 36.2 Ω·nC), reduced C_iss (827 pF) and ultra-low Q_gd (8 nC), enabling fast switching with minimized Miller-induced turn-on risk in flyback and LLC resonant converters.

Its avalanche-rated construction supports unclamped inductive switching up to 95 mJ at T_J = 25 °C, and the integral body diode exhibits controlled reverse recovery (Q_rr = 2.0–4.0 μC, I_RRM = 11 A), making it suitable for synchronous rectification and bidirectional energy transfer circuits where diode conduction occurs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports primary-side switching in 400 V DC bus systems with 20 % voltage margin for transient spikes
R_DS(on) max	0.94 Ω at 25 °C, V_GS = 10 V - determines conduction loss of ≤ 2.7 W at 3 A continuous drain current
Q_g max	44 nC - defines gate drive power requirement and switching speed limit in 100–300 kHz SMPS designs
E_AS	95 mJ - enables robust operation under inductive load switching without external snubbers in PFC boost stages
t_r/t_f	9–18 ns / 18–36 ns - supports <500 kHz hard-switching with minimal overlap loss when paired with 9.1 Ω gate resistor
C_oss	37 pF - contributes to low capacitive turn-off loss and stable dv/dt immunity up to 70 V/ns at T_J = 125 °C
I_D cont.	5.4 A at T_C = 25 °C - sets heatsink sizing baseline for 31 W power dissipation with R_thJC = 4.0 °C/W

Pinout & Package

Package: Thin-lead TO-220 FULLPAK - thermally enhanced variant with exposed drain tab on underside, 4.0 °C/W junction-to-case thermal resistance, and lead (Pb)-free/halogen-free construction per Vishay specification S17-1186-Rev. A.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires low-impedance path (<10 Ω) to minimize ringing during 22–44 nC charge/discharge
D (Drain)	High-side power terminal	Connected to HV DC bus (up to 800 V); electrically tied to metal tab - must be isolated from heatsink unless referenced to system ground
S (Source)	Power return and reference node	Serves as local ground for gate driver; carries full load current and reverse diode conduction; critical for Kelvin sensing in precision current monitoring

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	36.2 Ω·nC - reduces combined conduction + switching losses by ≥15 % vs. standard 800 V MOSFETs in 200 kHz PFC stages
Avalanche energy rating	95 mJ single-pulse - eliminates need for external clamping in 28.2 mH inductive test circuit with I_AS = 2.6 A
Ultra-low Q_gd	8 nC - suppresses false turn-on during high dv/dt commutation (70 V/ns), improving reliability in half-bridge configurations
Controlled body diode recovery	t_rr = 282–564 ns, Q_rr = 2.0–4.0 μC - enables soft-recovery behavior in flyback snubberless designs and reduces EMI generation
Thin-lead TO-220 FULLPAK	Reduced lead inductance and improved thermal coupling - achieves 31 W power dissipation with 4.0 °C/W R_thJC, outperforming standard TO-220 by ~1.2 °C/W

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: High-efficiency active clamp forward converter in 48 V/12 V intermediate bus conversion for AI accelerator racks. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 380–400 V DC input, operating at 250 kHz with zero-voltage switching assist. Use Value: Low Q_gd and 70 V/ns dv/dt rating prevent spurious turn-on during clamp node oscillation, improving system efficiency by 0.8 % at full load.	Use Scenario: Boost stage in string-level microinverters converting 30–60 V PV input to 400 V DC link for H-bridge inversion. IC Role / Device Role / Timing Role: Unidirectional power switch in discontinuous conduction mode (DCM) boost, conducting 5.4 A peak current with 100 ns dead-time margins. Use Value: 95 mJ E_AS withstands inductive kick during rapid MPPT transients without failure, extending field lifetime beyond 25 years.
Industrial Motor Drive	Fluorescent Ballast Lighting
Use Scenario: Brake chopper circuit in 3 kW servo drive dissipating regenerative energy into dynamic braking resistor. IC Role / Device Role / Timing Role: Fast-turning switch triggered by overvoltage comparator, cycling at ≤10 Hz with 15 A pulsed current capability. Use Value: Avalanche ruggedness ensures reliable energy clamping across 100,000+ brake cycles without parameter drift or degradation.	Use Scenario: Resonant half-bridge switch in electronic ballasts driving 40–60 W fluorescent lamps at 25–50 kHz. IC Role / Device Role / Timing Role: High-side switch in self-oscillating topology, subject to repetitive 600 V voltage reversal and body-diode conduction during zero-crossing. Use Value: Controlled t_rr and low Q_rr reduce audible noise and lamp flicker while maintaining >92 % ballast efficiency at 25 °C ambient.

Server Power Supply

Solar PV Inverter

Use Scenario: High-efficiency active clamp forward converter in 48 V/12 V intermediate bus conversion for AI accelerator racks.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 380–400 V DC input, operating at 250 kHz with zero-voltage switching assist.

Use Value: Low Q_gd and 70 V/ns dv/dt rating prevent spurious turn-on during clamp node oscillation, improving system efficiency by 0.8 % at full load.

Use Scenario: Boost stage in string-level microinverters converting 30–60 V PV input to 400 V DC link for H-bridge inversion.

IC Role / Device Role / Timing Role: Unidirectional power switch in discontinuous conduction mode (DCM) boost, conducting 5.4 A peak current with 100 ns dead-time margins.

Use Value: 95 mJ E_AS withstands inductive kick during rapid MPPT transients without failure, extending field lifetime beyond 25 years.

Industrial Motor Drive

Fluorescent Ballast Lighting

Use Scenario: Brake chopper circuit in 3 kW servo drive dissipating regenerative energy into dynamic braking resistor.

IC Role / Device Role / Timing Role: Fast-turning switch triggered by overvoltage comparator, cycling at ≤10 Hz with 15 A pulsed current capability.

Use Value: Avalanche ruggedness ensures reliable energy clamping across 100,000+ brake cycles without parameter drift or degradation.

Use Scenario: Resonant half-bridge switch in electronic ballasts driving 40–60 W fluorescent lamps at 25–50 kHz.

IC Role / Device Role / Timing Role: High-side switch in self-oscillating topology, subject to repetitive 600 V voltage reversal and body-diode conduction during zero-crossing.

Use Value: Controlled t_rr and low Q_rr reduce audible noise and lamp flicker while maintaining >92 % ballast efficiency at 25 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N80K5	800 V, 62 A, R_DS(on) = 0.065 Ω, Q_g = 120 nC, TO-247 package	Higher current rating but 2.7× higher Q_g; suited for high-power (>1 kW) continuous conduction mode PFC	Select when system requires >10 A average current and can accommodate larger heatsink and gate drive strength
IXTH6N80L	800 V, 6 A, R_DS(on) = 0.95 Ω, Q_g = 32 nC, TO-247 package, logic-level (V_GS(th) = 2.5–4.5 V)	Lower gate charge but higher R_DS(on); lacks avalanche rating; uses standard TO-247 instead of FULLPAK	Prefer for low-cost, low-frequency (<100 kHz) industrial controls where avalanche stress is absent and gate drive voltage is limited to 5 V

Compared with STW62N80K5 and IXTH6N80L, SIHA6N80E-GE3 delivers optimal balance of ruggedness (95 mJ E_AS), thermal performance (4.0 °C/W), and switching efficiency (low Q_gd/C_oss) in compact 5.4 A, 800 V applications - especially where board space, dv/dt immunity, and unclamped inductive robustness are prioritized over raw current capacity.

Availability

SIHA6N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for SIHA6N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal conditioning applications.

The SIHA6N80E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-voltage, medium-current switching in energy-efficient AC/DC and DC/DC conversion systems where avalanche capability and thermal performance are critical.

FAQ

What is the maximum continuous drain current rating for SIHA6N80E-GE3 at 100 °C case temperature?

The SIHA6N80E-GE3 supports 3.4 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the thin-lead TO-220 FULLPAK package and must be validated against actual PCB layout, heatsink interface, and ambient airflow conditions before final design sign-off. The SIHA6N80E-GE3 datasheet confirms linear derating begins at 0.25 W/°C above 100 °C case temperature.

Does SIHA6N80E-GE3 have avalanche capability, and how is it tested?

Yes, SIHA6N80E-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 95 mJ, tested per JEDEC JESD24-11 using V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.6 A starting at T_J = 25 °C. This rating ensures survivability during unclamped inductive switching events common in PFC and motor drive fault conditions. The SIHA6N80E-GE3 specification sheet explicitly lists E_AS in both Absolute Maximum Ratings and Product Summary sections.

What is the gate threshold voltage range for SIHA6N80E-GE3, and is it compatible with 5 V logic?

The SIHA6N80E-GE3 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C, making it compatible with 5 V logic-level gate drivers. However, full enhancement (R_DS(on) ≤ 0.94 Ω) requires V_GS ≥ 10 V per the datasheet's Static Characteristics table. While the SIHA6N80E-GE3 will turn on with 5 V, its on-resistance increases significantly - confirming that 10 V drive is required for nominal conduction performance.

How does the body diode performance of SIHA6N80E-GE3 compare to standard 800 V MOSFETs?

The SIHA6N80E-GE3 features a tailored body diode with t_rr = 282–564 ns and Q_rr = 2.0–4.0 μC at I_F = 3 A, di/dt = 100 A/μs, and T_J = 25 °C - significantly faster and lower-charge than typical 800 V MOSFETs. This improves efficiency in quasi-resonant and flyback topologies where body diode conduction occurs. The SIHA6N80E-GE3 datasheet provides measured trr and Qrr values in the Drain-Source Body Diode Characteristics table, confirming its optimized recovery behavior.

What is the thermal resistance from junction to case (R_thJC) for SIHA6N80E-GE3, and how is it measured?

The SIHA6N80E-GE3 has a maximum junction-to-case (drain) thermal resistance (R_thJC) of 4.0 °C/W, measured per JEDEC JESD51-14 with the device mounted on a cold plate using standard thermal interface material. This value is confirmed in the Thermal Resistance Ratings table of the official Vishay datasheet (Document Number: 92016). The SIHA6N80E-GE3's thin-lead TO-220 FULLPAK construction enables this low R_thJC, supporting 31 W power dissipation at T_C = 25 °C.

SIHA6N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 940mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 827 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA6N80E-GE3 FAQ

1.How can I place an order for SIHA6N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA6N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA6N80E-GE3 reliable?

The price and inventory of SIHA6N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA6N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA6N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA6N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA6N80E-GE3?

SIHA6N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA6N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA6N80E-GE3?

For technical support, including SIHA6N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA6N80E-GE3 requirements.

6.How does Aetrix verify that SIHA6N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA6N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA6N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA6N80E-GE3?

All SIHA6N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA6N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA6N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHA6N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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