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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB053N60E-GE3

Name: SIHB053N60E-GE3
Brand: Vishay Siliconix
SKU: SIHB053N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB053N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB053N60E-GE3.pdf

Description:: E SERIES POWER MOSFET D2PAK (TO-

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Product details

Overview

SIHB053N60E-GE3 from Vishay Siliconix is a 600 V, 47 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 0.047 Ω R_DS(on) at V_GS = 10 V, 92 nC total gate charge, and 286 mJ single-pulse avalanche energy - optimized for high-efficiency server power supplies and PFC stages.

For engineers reviewing the SIHB053N60E-GE3 datasheet, SIHB053N60E-GE3 pinout, SIHB053N60E-GE3 application, or SIHB053N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), Co(er) of 105 pF, and rated operation up to 150 °C junction temperature in hard-switched SMPS topologies.

Technical Context

This E-series MOSFET employs Vishay's 4th-generation superjunction technology, delivering reduced switching losses via low Q_gd/Q_g ratio (13/92 nC) and minimized output capacitance energy (E_oss = 0.5 × C_o(er) × V²). Its dV/dt rating of 100 V/ns at T_J = 125 °C supports robust operation in fast-rising voltage environments.

The integrated body diode exhibits 516 ns typical reverse recovery time (T_J = 25 °C, I_F = 26.5 A) and 7.5 μC Q_rr, enabling reliable performance in synchronous rectification and bidirectional current paths without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % voltage margin for transient clamping in telecom and server PSUs
R_DS(on) typ @ 25 °C	0.047 Ω - enables ≤2.5 W conduction loss at 26.5 A continuous drain current, reducing thermal load in compact layouts
Q_g max	92 nC - determines gate driver power requirement; compatible with standard 1–2 A peak drivers for <100 kHz switching
E_AS	286 mJ - ensures ruggedness against unclamped inductive switching events in motor drives and welding inverters
C_o(er)	105 pF - energy-related effective output capacitance directly impacts turn-off loss (E_off ∝ C_o(er) × V²)
T_J range	−55 to +150 °C - qualified for industrial ambient conditions and high-power density enclosures without derating below 100 °C case temp
R_thJC max	0.45 °C/W - enables >200 W power dissipation with moderate heatsinking, critical for high-current PFC boost stages

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated thermal pad on drain side; 3-pin configuration (G, D, S) supporting high-current PCB routing and efficient heat transfer to copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; threshold voltage 3–5 V ensures compatibility with standard PWM controllers
D (Drain)	High-side power terminal	Connected to DC bus or transformer primary; electrically tied to thermal pad for low-inductance, high-current return path
S (Source)	Reference and current return	Serves as local ground reference for gate drive; requires Kelvin connection in high-di/dt applications to minimize shoot-through risk

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	4.3 nC·Ω - reduces combined conduction and switching loss, improving full-load efficiency in 1–3 kW SMPS
Avalanche-rated (UIS)	286 mJ single-pulse - eliminates need for external snubbers in flyback or LLC resonant converters under overload
Reduced C_o(er)	105 pF - cuts turn-off energy by ~30 % vs. prior-gen 600 V MOSFETs, enabling higher frequency operation without efficiency penalty
Enhanced body diode Q_rr	7.5 μC typical - lowers reverse recovery loss in synchronous rectification, improving light-load efficiency in LLC half-bridge outputs
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc# 99912 - suitable for green industrial and telecom deployments

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 80+ Titanium-certified 3 kW AC-DC front-end with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage, high-current main switching device operating at 100–200 kHz with zero-voltage switching assistance. Use Value: 0.047 Ω R_DS(on) and 92 nC Q_g enable >96 % efficiency at 50 % load while maintaining thermal margin below 125 °C junction.	Use Scenario: Boost PFC stage in 48 V telecom rectifier handling 2.5 kW input with universal AC line (90–264 VAC). IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch managing 40 A peak inductor current. Use Value: 286 mJ E_AS withstands line surges and inrush transients; low C_o(er) minimizes dead-time losses during soft-switching transitions.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching device in string inverter DC-DC stage converting 600–1000 V PV array output to 400 V bus. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in interleaved boost converter with 50 kHz switching frequency. Use Value: 600 V V_DS rating provides safety margin above 1000 V PV open-circuit voltage; 150 °C T_J rating supports outdoor enclosure operation.	Use Scenario: Inverter leg switch in 7.5 kW variable-frequency drive powering HVAC compressors and pumps. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-phase bridge delivering 30 A RMS output current. Use Value: Avalanche ruggedness (286 mJ) handles motor inductive kickback; low Q_gd/Q_g ratio improves gate control stability during fast dv/dt commutation.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 80+ Titanium-certified 3 kW AC-DC front-end with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage, high-current main switching device operating at 100–200 kHz with zero-voltage switching assistance.

Use Value: 0.047 Ω R_DS(on) and 92 nC Q_g enable >96 % efficiency at 50 % load while maintaining thermal margin below 125 °C junction.

Use Scenario: Boost PFC stage in 48 V telecom rectifier handling 2.5 kW input with universal AC line (90–264 VAC).

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch managing 40 A peak inductor current.

Use Value: 286 mJ E_AS withstands line surges and inrush transients; low C_o(er) minimizes dead-time losses during soft-switching transitions.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching device in string inverter DC-DC stage converting 600–1000 V PV array output to 400 V bus.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in interleaved boost converter with 50 kHz switching frequency.

Use Value: 600 V V_DS rating provides safety margin above 1000 V PV open-circuit voltage; 150 °C T_J rating supports outdoor enclosure operation.

Use Scenario: Inverter leg switch in 7.5 kW variable-frequency drive powering HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-phase bridge delivering 30 A RMS output current.

Use Value: Avalanche ruggedness (286 mJ) handles motor inductive kickback; low Q_gd/Q_g ratio improves gate control stability during fast dv/dt commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.055 Ω, Q_g = 85 nC, TO-247 package, no specified E_AS	Higher conduction loss; larger footprint; lacks avalanche rating documentation	Preferred where layout space allows TO-247 and avalanche stress is absent
IXFH50N60P	R_DS(on) = 0.065 Ω, Q_g = 110 nC, TO-247 package, E_AS = 220 mJ	Higher switching and conduction losses; lower avalanche capability; incompatible pinout	Consider only if legacy TO-247 socket reuse is mandatory and efficiency targets permit 0.5–1 % penalty

Compared with STW62N60M2 and IXFH50N60P, SIHB053N60E-GE3 delivers superior FOM (4.3 vs. ≥4.7 nC·Ω), documented 286 mJ avalanche rating, and D2PAK surface-mount compatibility - making it optimal for space-constrained, high-reliability 600 V power conversion where thermal and ruggedness margins are critical.

Availability

SIHB053N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHB053N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The E Series Power MOSFET product line targets high-frequency, high-efficiency power conversion in datacenter, telecom, and renewable energy systems - engineered for low FOM, rugged avalanche behavior, and thermally robust packaging.

FAQ

What is the maximum continuous drain current rating for SIHB053N60E-GE3 at 100 °C case temperature?

The SIHB053N60E-GE3 supports 29 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 47 A rating at 25 °C case temperature, based on a linear derating factor of 2.2 W/°C and R_thJC = 0.45 °C/W. Engineers must verify PCB copper area and heatsinking to sustain this current in actual SIHB053N60E-GE3 deployments.

Does SIHB053N60E-GE3 have a fully rated avalanche energy specification?

Yes, SIHB053N60E-GE3 is fully rated for unclamped inductive switching with a single-pulse avalanche energy (E_AS) of 286 mJ, tested per JEDEC JESD24-11 at V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.5 A. This validated ruggedness eliminates reliance on external protection circuits in flyback, forward, and resonant converters where inductive energy must be safely absorbed.

What is the gate-source threshold voltage range for SIHB053N60E-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHB053N60E-GE3 is specified from 3 V to 5 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction near system ground noise margins. The typical value is centered at 4 V, supporting robust noise immunity in high-dv/dt power stages using SIHB053N60E-GE3.

How does the effective output capacitance (Co(er)) of SIHB053N60E-GE3 impact switching loss?

The Co(er) of SIHB053N60E-GE3 is 105 pF - a fixed capacitance calibrated to match the stored energy in C_oss across 0–480 V. Since turn-off loss scales with 0.5 × Co(er) × V², this low value directly reduces E_off by ~25 % versus comparable 600 V MOSFETs with Co(er) > 140 pF, enabling higher frequency operation in SIHB053N60E-GE3-based PFC and DC-DC converters without efficiency degradation.

Is SIHB053N60E-GE3 suitable for use in synchronous rectification topologies?

Yes, SIHB053N60E-GE3 is suitable for synchronous rectification due to its characterized body diode parameters: V_SD = 1.2 V at I_S = 26.5 A and T_J = 25 °C, t_rr = 516 ns, and Q_rr = 7.5 μC. These values allow precise timing control of gate drive signals to minimize reverse recovery loss and cross-conduction risk - especially in LLC resonant and phase-shifted full-bridge converters using SIHB053N60E-GE3 as secondary-side switches.

SIHB053N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 54mOhm @ 26.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 92 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3722 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB053N60E-GE3 FAQ

1.How can I place an order for SIHB053N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB053N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB053N60E-GE3 reliable?

The price and inventory of SIHB053N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB053N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB053N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB053N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB053N60E-GE3?

SIHB053N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB053N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB053N60E-GE3?

For technical support, including SIHB053N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB053N60E-GE3 requirements.

6.How does Aetrix verify that SIHB053N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB053N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB053N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB053N60E-GE3?

All SIHB053N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB053N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB053N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHB053N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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