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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB055N60EF-GE3

Name: SIHB055N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHB055N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB055N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB055N60EF-GE3.pdf

Description:: EF SERIES POWER MOSFET WITH FAST

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Product details

Overview

SIHB055N60EF-GE3 from Vishay Siliconix is a 600 V, 46 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 0.048 Ω R_DS(on) at V_GS = 10 V, 95 nC total gate charge, and fast body diode with 156 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHB055N60EF-GE3 datasheet, SIHB055N60EF-GE3 pinout, SIHB055N60EF-GE3 application, or SIHB055N60EF-GE3 equivalent, this device is selected for high-voltage, high-current hard-switched topologies requiring avalanche-rated ruggedness, low Co(er) capacitance, and tight thermal resistance (R_thJC = 0.45 °C/W).

Technical Context

This 4th-generation EF-series MOSFET employs optimized trench-gate silicon technology to achieve a low figure-of-merit (R_DS(on) × Q_g = 4.56 Ω·nC), reduced effective output capacitance (Co(er) = 110 pF), and enhanced unclamped inductive switching capability (E_AS = 286 mJ). Its fast intrinsic body diode supports ZVS-assisted transitions and reduces snubber losses in bridge-leg configurations.

The device operates across -55 °C to +150 °C junction temperature range with ±30 V gate-source voltage rating, 100 V/ns dV/dt immunity, and 150 V/ns reverse diode dV/dt rating - enabling robust performance in noisy industrial and high-density power converter environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in telecom rectifiers and solar inverters.
R_DS(on) typ @ 10 V	0.048 Ω - Enables <1.3 W conduction loss at 16 A RMS in continuous conduction mode PFC boost stages.
Q_g max	95 nC - Determines gate drive power requirement (~1.9 mW per MHz at 10 V swing) and influences switching speed control.
E_AS	286 mJ - Guarantees single-pulse avalanche survivability under worst-case inductive turn-off faults without derating.
R_thJC	0.45 °C/W - Allows >200 W power dissipation with moderate heatsinking (e.g., 15 °C/W sink), critical for compact 3 kW+ PSUs.
t_rr	156 ns - Limits diode reverse recovery current overshoot (<13 A I_RRM) and associated voltage spikes in half-bridge LLC resonant converters.
I_D cont @ T_C = 100 °C	29 A - Defines maximum sustainable drain current under real-world PCB-mounted thermal conditions with forced air cooling.

Pinout & Package

D2PAK (TO-263) package with exposed drain tab for low-inductance, high-current PCB mounting and direct thermal coupling to heatsink. Standard 3-lead configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Controls channel conduction; requires ≤±30 V drive; 0.4–1.6 Ω gate input resistance affects RC timing and EMI filtering design.
D	Drain terminal / thermal pad	Main high-side current path and primary thermal interface; electrically connected to metal tab - must be isolated from heatsink unless referenced to system ground.
S	Source terminal	Return path for load current and reference node for gate drive; low-inductance layout essential to minimize shoot-through risk in bridge configurations.

Key Features

Feature	Design Value
Fast body diode	156 ns t_rr, 1.1 μC Q_rr - Reduces dead-time losses and enables synchronous rectification emulation in flyback and forward converters.
Avalanche energy rated	286 mJ E_AS - Eliminates need for external clamping circuits in inductive load switching and improves system-level fault tolerance.
Low Co(er)	110 pF - Minimizes stored output capacitance energy (E_oss), directly lowering turn-on switching loss in hard-switched topologies.
High dV/dt immunity	100 V/ns (drain), 150 V/ns (diode) - Prevents false turn-on during fast voltage transients in multi-kW phase-shifted full-bridge designs.
4th-gen EF process	R_DS(on) × Q_g = 4.56 Ω·nC - Balances conduction and switching loss trade-offs for optimal efficiency across 50–500 kHz operating range.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1U/2U 3 kW AC-DC front-end modules. IC Role / Device Role / Timing Role: High-side main switching element handling 400 V DC bus, switching at 200–300 kHz with zero-voltage switching assistance. Use Value: Low R_DS(on) and fast body diode reduce conduction loss and improve light-load efficiency by minimizing dead-time conduction loss.	Use Scenario: Boost PFC stage in -48 V telecom rectifier systems with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch operating at 65–100 kHz with high duty-cycle variation. Use Value: 29 A continuous current rating at 100 °C case temperature ensures stable operation under sustained 2.5 kW load with natural convection cooling.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching device in string-level MPPT converters feeding central or string inverters. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in buck-boost or SEPIC topology managing up to 1000 V DC input. Use Value: 600 V V_DS rating with 286 mJ E_AS withstands lightning-induced surges and DC bus transients common in outdoor PV installations.	Use Scenario: Inverter leg switch in 7.5 kW variable frequency drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 2-level inverter topology operating at 4–8 kHz carrier frequency. Use Value: 0.45 °C/W R_thJC enables direct heatsink mounting without thermal interface pads, reducing thermal resistance by ~0.3 °C/W versus standard TO-247 packages.

Server Power Supply

Telecom Rectifier

Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1U/2U 3 kW AC-DC front-end modules.

IC Role / Device Role / Timing Role: High-side main switching element handling 400 V DC bus, switching at 200–300 kHz with zero-voltage switching assistance.

Use Value: Low R_DS(on) and fast body diode reduce conduction loss and improve light-load efficiency by minimizing dead-time conduction loss.

Use Scenario: Boost PFC stage in -48 V telecom rectifier systems with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch operating at 65–100 kHz with high duty-cycle variation.

Use Value: 29 A continuous current rating at 100 °C case temperature ensures stable operation under sustained 2.5 kW load with natural convection cooling.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching device in string-level MPPT converters feeding central or string inverters.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in buck-boost or SEPIC topology managing up to 1000 V DC input.

Use Value: 600 V V_DS rating with 286 mJ E_AS withstands lightning-induced surges and DC bus transients common in outdoor PV installations.

Use Scenario: Inverter leg switch in 7.5 kW variable frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 2-level inverter topology operating at 4–8 kHz carrier frequency.

Use Value: 0.45 °C/W R_thJC enables direct heatsink mounting without thermal interface pads, reducing thermal resistance by ~0.3 °C/W versus standard TO-247 packages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.055 Ω, Q_g = 110 nC, TO-247 package, no specified E_AS rating	Higher gate charge increases driver loss; larger TO-247 footprint requires PCB redesign; lacks avalanche qualification	Prefer SIHB055N60EF-GE3 where board space, avalanche robustness, or thermal performance are critical.
IXFH50N60X3	R_DS(on) = 0.052 Ω, Q_g = 85 nC, TO-247 package, E_AS = 220 mJ	Lower Q_g improves switching efficiency but lower E_AS limits fault margin; same thermal resistance limitation due to TO-247 mounting	Choose SIHB055N60EF-GE3 when higher avalanche energy and superior thermal interface (D2PAK tab) are required for long-term reliability.

Compared with STW62N60M2 and IXFH50N60X3, SIHB055N60EF-GE3 offers the lowest R_DS(on) × Q_g FOM, highest E_AS, and most thermally efficient package - making it optimal for space-constrained, high-reliability 600 V power conversion where thermal management and fault resilience are prioritized.

Availability

SIHB055N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, lead-free compliance, and long-lifecycle support.

Supply support for SIHB055N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The EF Series Power MOSFETs, including SIHB055N60EF-GE3, were engineered for high-frequency, high-efficiency switching in enterprise and industrial power conversion - targeting reduced system size, improved thermal behavior, and enhanced avalanche survivability.

FAQ

What is the maximum continuous drain current for SIHB055N60EF-GE3 at 100 °C case temperature?

The SIHB055N60EF-GE3 supports 29 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This value reflects real-world thermal limits under typical PCB-mounted conditions with moderate airflow, and must be used - not the 46 A rating at 25 °C - for thermal design validation of SIHB055N60EF-GE3 in production systems.

Does SIHB055N60EF-GE3 have an avalanche-rated specification?

Yes, SIHB055N60EF-GE3 is fully avalanche-rated with a single-pulse unclamped inductive switching (UIS) energy rating of 286 mJ. This parameter is measured under defined test conditions (V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 4.5 A) and guarantees ruggedness against inductive turn-off faults without external protection circuitry in SIHB055N60EF-GE3-based designs.

What is the gate threshold voltage range for SIHB055N60EF-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHB055N60EF-GE3 is specified from 3 V to 5 V at T_J = 25 °C, with I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity - critical for stable operation of SIHB055N60EF-GE3 in high-dV/dt power converter environments.

How does the fast body diode of SIHB055N60EF-GE3 improve system efficiency?

The SIHB055N60EF-GE3 body diode achieves 156 ns typical reverse recovery time (t_rr) and 1.1 μC reverse recovery charge (Q_rr). These values reduce diode conduction loss and associated voltage spikes during commutation, directly improving efficiency in hard-switched topologies like PFC boost and half-bridge converters using SIHB055N60EF-GE3 as the main switch.

What package type is used for SIHB055N60EF-GE3, and why is it advantageous?

SIHB055N60EF-GE3 uses the D2PAK (TO-263) package with an exposed drain tab. This configuration provides 0.45 °C/W junction-to-case thermal resistance and enables low-inductance, high-current PCB routing. Compared to TO-247, the D2PAK's surface-mount form factor saves board space and improves thermal coupling to heatsinks - key advantages for dense, high-power SIHB055N60EF-GE3 implementations.

SIHB055N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 26.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3707 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB055N60EF-GE3 FAQ

1.How can I place an order for SIHB055N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB055N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB055N60EF-GE3 reliable?

The price and inventory of SIHB055N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB055N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB055N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB055N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB055N60EF-GE3?

SIHB055N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB055N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB055N60EF-GE3?

For technical support, including SIHB055N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB055N60EF-GE3 requirements.

6.How does Aetrix verify that SIHB055N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB055N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB055N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB055N60EF-GE3?

All SIHB055N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB055N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB055N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHB055N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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