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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB065N60E-GE3

Name: SIHB065N60E-GE3
Brand: Vishay Siliconix
SKU: SIHB065N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB065N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB065N60E-GE3.pdf

Description:: MOSFET N-CH 600V 40A D2PAK

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Product details

Overview

SIHB065N60E-GE3 from Vishay Siliconix is a 600 V, 40 A, N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 0.057 Ω R_DS(on) at V_GS = 10 V, 74 nC total gate charge, and 226 mJ single-pulse avalanche energy-designed for high-efficiency switching in telecom power supplies and PFC stages.

For engineers reviewing the SIHB065N60E-GE3 datasheet, SIHB065N60E-GE3 pinout, SIHB065N60E-GE3 application, or SIHB065N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), Co(er) of 93 pF, dV/dt rating of 100 V/ns at T_J = 125 °C, and robust UIS capability-critical for hard-switched industrial and solar inverter designs.

Technical Context

This E-series MOSFET employs 4th-generation superjunction technology optimized for reduced conduction and switching losses in continuous conduction mode (CCM) PFC and LLC resonant converters. Its low C_oss(er) (93 pF) and C_rss/C_iss ratio (5/2700 pF) support fast, low-loss turn-off and improved voltage transition control under high dV/dt stress.

The device integrates an avalanche-rated body diode with t_rr = 382 ns (typ.) and Q_rr = 7.1 μC at T_J = 25 °C, enabling reliable operation in synchronous rectification and bidirectional topologies without external snubbing-while maintaining R_thJC = 0.5 °C/W for thermal management in high-power-density layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input PFC stages with 50 % safety margin and withstands 1.2× line surges in telecom rectifiers.
R_DS(on) typ	0.057 Ω at V_GS = 10 V - enables ≤2.3 W conduction loss at 16 A DC, critical for <95 % efficiency targets in 3–5 kW server PSUs.
Q_g max	74 nC - determines gate driver current requirement (~1.5 A peak for 50 ns turn-on with 9.1 Ω R_g) and switching loss contribution.
E_AS	226 mJ - guarantees single-pulse unclamped inductive switching survival in motor drive H-bridge shoot-through events.
C_oss(er)	93 pF - defines stored output capacitance energy (E_oss ≈ 10.7 μJ at 480 V), directly impacting turn-off loss in hard-switched SMPS.
T_J range	–55 to +150 °C - qualifies for industrial ambient environments and enables derated operation up to 100 °C case temperature at full 25 A load.
R_thJC	0.5 °C/W - allows 250 W dissipation with ≤125 K rise above heatsink, supporting compact thermal design in D2PAK-mounting applications.

Pinout & Package

D2PAK (TO-263) package with exposed drain pad on underside for low-inductance, high-current PCB mounting and direct thermal coupling to heatsink. Standard 3-lead configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Accepts 10 V logic-level drive; V_GS(th) = 3–5 V ensures reliable turn-on with standard PWM controllers; R_g = 0.3–1.4 Ω limits ringing in high-dV/dt environments.
D	Drain (high-side switch node)	Connected to internal superjunction die and exposed copper pad; carries full load current and must be routed with minimal loop area to suppress EMI in >100 kHz converters.
S	Source (power ground reference)	Serves as return path for load current and gate drive return; requires low-impedance Kelvin connection to controller ground to maintain accurate current sensing and prevent false overcurrent trips.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	4.2 nC·Ω - reduces combined conduction + switching loss by ≥15 % vs. prior-gen 600 V MOSFETs in 100–300 kHz PFC stages.
Avalanche-rated (UIS)	226 mJ single-pulse - eliminates need for external clamping in inductive load switching, simplifying protection circuitry in welding inverters.
Low C_oss(er)	93 pF - cuts turn-off energy loss by ~30 % compared to standard 600 V MOSFETs with similar R_DS(on), improving efficiency in LLC resonant tanks.
Body diode t_rr	382 ns (typ.) - enables clean commutation in synchronous rectifier configurations without excessive reverse recovery spikes in PV inverters.
Lead (Pb)-free & halogen-free	RoHS-compliant construction - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) and supports lead-free reflow profiles up to 260 °C peak.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Active clamp forward or phase-shifted full-bridge primary switch in 3 kW redundant PSU modules. IC Role / Device Role / Timing Role: High-voltage, high-current main switching element operating at 100–200 kHz with ZVS-assisted turn-on. Use Value: 0.057 Ω R_DS(on) and 74 nC Q_g enable >94.5 % efficiency at full load while maintaining <110 °C junction temperature under forced air cooling.	Use Scenario: Boost PFC stage in 48 V telecom rectifier handling 30 A input current from 200–240 V AC mains. IC Role / Device Role / Timing Role: Fast-switching boost switch in continuous conduction mode (CCM), driven by UCC28070 or similar controller. Use Value: Low C_oss(er) (93 pF) minimizes turn-off loss during high-line operation, reducing thermal stress and enabling smaller heatsinks.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters with 600–1000 V DC input and transformerless topology. IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage, subject to repetitive 600 V blocking and 16 A RMS current. Use Value: 600 V V_DS rating with 226 mJ E_AS ensures reliability during grid fault transients and anti-islanding shutdown sequences.	Use Scenario: Inverter leg switch in 5–7.5 kW variable frequency drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 2–8 kHz PWM inverters, leveraging low R_DS(on) and fast body diode. Use Value: 382 ns t_rr and 7.1 μC Q_rr reduce cross-conduction loss and EMI generation during freewheeling, improving EMC compliance.

Server Power Supply

Telecom Rectifier

Use Scenario: Active clamp forward or phase-shifted full-bridge primary switch in 3 kW redundant PSU modules.

IC Role / Device Role / Timing Role: High-voltage, high-current main switching element operating at 100–200 kHz with ZVS-assisted turn-on.

Use Value: 0.057 Ω R_DS(on) and 74 nC Q_g enable >94.5 % efficiency at full load while maintaining <110 °C junction temperature under forced air cooling.

Use Scenario: Boost PFC stage in 48 V telecom rectifier handling 30 A input current from 200–240 V AC mains.

IC Role / Device Role / Timing Role: Fast-switching boost switch in continuous conduction mode (CCM), driven by UCC28070 or similar controller.

Use Value: Low C_oss(er) (93 pF) minimizes turn-off loss during high-line operation, reducing thermal stress and enabling smaller heatsinks.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters with 600–1000 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage, subject to repetitive 600 V blocking and 16 A RMS current.

Use Value: 600 V V_DS rating with 226 mJ E_AS ensures reliability during grid fault transients and anti-islanding shutdown sequences.

Use Scenario: Inverter leg switch in 5–7.5 kW variable frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 2–8 kHz PWM inverters, leveraging low R_DS(on) and fast body diode.

Use Value: 382 ns t_rr and 7.1 μC Q_rr reduce cross-conduction loss and EMI generation during freewheeling, improving EMC compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.055 Ω, Q_g = 85 nC, TO-247 package, no specified E_AS rating	Higher gate charge increases driver loss; larger TO-247 footprint requires PCB redesign; lacks avalanche qualification data	Prefer SIHB065N60E-GE3 where board space, avalanche robustness, or thermal resistance (0.5 °C/W vs. ~0.8 °C/W) are critical.
IXFH60N60X	R_DS(on) = 0.065 Ω, Q_g = 105 nC, TO-247, specified E_AS = 200 mJ	Higher conduction loss (+14 % at 16 A) and gate drive demand; same voltage rating but lower avalanche margin	Choose SIHB065N60E-GE3 when optimizing for FOM-driven efficiency in compact, thermally constrained PFC modules.

Compared with STW62N60M2 and IXFH60N60X, SIHB065N60E-GE3 delivers superior figure-of-merit (R_DS(on) × Q_g = 4.2), lower thermal resistance, and verified 226 mJ avalanche capability-making it optimal for space-constrained, high-reliability 600 V switching where both efficiency and ruggedness are prioritized.

Availability

SIHB065N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHB065N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIHB065N60E-GE3 belongs to Vishay's E Series Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching in industrial, telecom, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current for SIHB065N60E-GE3 at 100 °C case temperature?

The SIHB065N60E-GE3 supports 25 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature, provided R_thJC = 0.5 °C/W path is maintained to the heatsink.

Does SIHB065N60E-GE3 have avalanche capability, and how is it rated?

Yes, SIHB065N60E-GE3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) capability of 226 mJ, tested per conditions in Note b: V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 4 A, starting T_J = 25 °C. This rating validates ruggedness against transient overvoltage events in motor drive and welding applications.

What is the gate threshold voltage range for SIHB065N60E-GE3, and why does it matter?

The gate-source threshold voltage (V_GS(th)) for SIHB065N60E-GE3 is 3–5 V at V_DS = V_GS and I_D = 250 μA. This range ensures compatibility with standard 10 V gate drivers while preventing accidental turn-on from noise-critical for stable operation in high-noise industrial environments where gate drive margins must exceed 2× V_GS(th).

How does the body diode performance of SIHB065N60E-GE3 compare to standard 600 V MOSFETs?

The SIHB065N60E-GE3 features a fast, soft-recovery body diode with t_rr = 382 ns (typ.) and Q_rr = 7.1 μC at T_J = 25 °C-significantly lower than typical 600 V superjunction MOSFETs (t_rr > 500 ns). This reduces reverse recovery loss and EMI in bidirectional and synchronous rectifier topologies used in PV inverters and UPS systems.

Is SIHB065N60E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHB065N60E-GE3 is lead (Pb)-free and halogen-free, qualified for lead-free reflow with a peak temperature of 260 °C for 10 seconds, per JEDEC J-STD-020. Its D2PAK package meets MSL-1 classification, eliminating bake requirements and supporting high-yield automated assembly in modern electronics manufacturing lines.

SIHB065N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB065N60E-GE3 FAQ

1.How can I place an order for SIHB065N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB065N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB065N60E-GE3 reliable?

The price and inventory of SIHB065N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB065N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB065N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB065N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB065N60E-GE3?

SIHB065N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB065N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB065N60E-GE3?

For technical support, including SIHB065N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB065N60E-GE3 requirements.

6.How does Aetrix verify that SIHB065N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB065N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB065N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB065N60E-GE3?

All SIHB065N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB065N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB065N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHB065N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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