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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB080N60E-GE3

Name: SIHB080N60E-GE3
Brand: Vishay Siliconix
SKU: SIHB080N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB080N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB080N60E-GE3.pdf

Description:: E SERIES POWER MOSFET D2PAK (TO-

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Product details

Overview

SIHB080N60E-GE3 from Vishay Siliconix is a 600 V, 35 A (T_C = 25 °C), N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.070 Ω at V_GS = 10 V and Q_g = 42 nC (typ.), optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.

For engineers reviewing the SIHB080N60E-GE3 datasheet, SIHB080N60E-GE3 pinout, SIHB080N60E-GE3 application, or SIHB080N60E-GE3 equivalent, key selection criteria include avalanche-rated ruggedness (E_AS = 226 mJ), low Co(er) = 79 pF for reduced switching loss, and 100 V/ns dv/dt capability under TJ = 125 °C conditions.

Technical Context

This 4th-generation E-series MOSFET employs planar stripe cell architecture with optimized gate charge distribution to achieve low figure-of-merit (R_DS(on) × Q_g = 2.94 Ω·nC). Its body diode exhibits t_rr = 441 ns (typ.) and Q_rr = 5.2 μC at T_J = 25 °C, supporting ZVS operation in resonant topologies.

The device supports hard-switched operation up to 600 V DC bus with guaranteed UIS rating and operates across -55 °C to +150 °C junction range. Thermal resistance R_thJC = 0.55 °C/W enables high-power density designs when mounted on copper-clad PCBs with thermal pad soldering.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 400 V AC input rectified systems with 50 % safety margin
R_DS(on) typ	0.070 Ω @ V_GS = 10 V - Enables <1.2 W conduction loss at 17 A continuous current
Q_g typ	42 nC - Reduces gate drive power requirement in 100–300 kHz SMPS designs
E_AS	226 mJ - Withstands unclamped inductive switching events without failure
C_o(er)	79 pF - Low energy-related output capacitance minimizes turn-off loss
t_r/t_f	96/31 ns (typ.) - Fast switching supports high-frequency operation with controlled EMI
R_thJC	0.55 °C/W - Allows >200 W dissipation with 100 °C case-to-ambient delta

Pinout & Package

D2PAK (TO-263) package with exposed drain thermal pad; 3-pin configuration (G, D, S); lead (Pb)-free and halogen-free per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; ±30 V absolute max rating prevents gate oxide damage
D (Drain)	Main power terminal	Connected to high-side switching node; electrically tied to thermal pad for low-inductance heat path
S (Source)	Reference and return path	Serves as common reference for gate drive and current sensing; low-inductance layout critical for dV/dt immunity

Key Features

Feature	Design Value
4th-gen E-series technology	Optimized cell pitch and gate oxide thickness reduce R_DS(on) × Q_g by 22 % vs. prior generation
Avalanche energy rated (UIS)	226 mJ single-pulse rating enables robustness in inductive load switching without snubbers
Low C_o(er)	79 pF reduces turn-off switching loss by ~35 % compared to standard 600 V MOSFETs
High dv/dt immunity	100 V/ns at T_J = 125 °C ensures reliable operation in fast-switching PFC and LLC converters
Body diode Q_rr	5.2 μC (typ.) supports soft-recovery in bridge-leg configurations with minimal voltage overshoot

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW 48 V output telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 600 V DC bus and 25 A peak current at 200 kHz. Use Value: Low R_DS(on) and Q_g reduce conduction and gate drive losses, improving full-load efficiency to >96 %.	Use Scenario: Boost PFC stage in 1U 1.5 kW server PSU operating at 65 kHz with digital control. IC Role / Device Role / Timing Role: Fast-switching boost switch with critical conduction mode (CrM) and valley switching. Use Value: Low C_o(er) and fast t_r/t_f minimize switching loss and enable stable CrM operation across line range.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz hard-switched inverter leg with 1000 V DC bus derating. Use Value: Avalanche rating and 600 V V_DS support safe operation during grid fault transients and DC overvoltage events.	Use Scenario: Inverter output stage in 7.5 kW HVAC compressor drive using space-vector PWM at 8 kHz. IC Role / Device Role / Timing Role: Low-side switching device with integrated body diode conducting freewheeling current. Use Value: Low Q_rr and soft recovery reduce diode reverse recovery stress and EMI in motor winding circuits.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW 48 V output telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 600 V DC bus and 25 A peak current at 200 kHz.

Use Value: Low R_DS(on) and Q_g reduce conduction and gate drive losses, improving full-load efficiency to >96 %.

Use Scenario: Boost PFC stage in 1U 1.5 kW server PSU operating at 65 kHz with digital control.

IC Role / Device Role / Timing Role: Fast-switching boost switch with critical conduction mode (CrM) and valley switching.

Use Value: Low C_o(er) and fast t_r/t_f minimize switching loss and enable stable CrM operation across line range.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz hard-switched inverter leg with 1000 V DC bus derating.

Use Value: Avalanche rating and 600 V V_DS support safe operation during grid fault transients and DC overvoltage events.

Use Scenario: Inverter output stage in 7.5 kW HVAC compressor drive using space-vector PWM at 8 kHz.

IC Role / Device Role / Timing Role: Low-side switching device with integrated body diode conducting freewheeling current.

Use Value: Low Q_rr and soft recovery reduce diode reverse recovery stress and EMI in motor winding circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.065 Ω (typ.), Q_g = 55 nC, TO-247 package, no avalanche rating specified	Higher gate charge increases driver loss; lacks UIS qualification for inductive loads	Prefer SIHB080N60E-GE3 where avalanche ruggedness and D2PAK thermal performance are required
IXFH50N60X	R_DS(on) = 0.085 Ω (typ.), Q_g = 38 nC, TO-247 package, E_AS = 190 mJ	Higher R_DS(on) increases conduction loss; lower E_AS limits unclamped inductive energy handling	Choose SIHB080N60E-GE3 for higher current density and superior avalanche capability in compact layouts

Compared with STW62N60M2 and IXFH50N60X, SIHB080N60E-GE3 delivers best-in-class R_DS(on) × Q_g FOM (2.94 Ω·nC), highest E_AS, and D2PAK thermal advantage-making it optimal for space-constrained, high-reliability 600 V SMPS and PFC designs.

Availability

SIHB080N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHB080N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.

The E Series Power MOSFET product line targets high-efficiency, high-power-density switch-mode power conversion in datacenter, telecom, and renewable energy systems-designed for low-loss, rugged, and thermally efficient operation.

FAQ

What is the maximum continuous drain current rating for SIHB080N60E-GE3 at 100 °C case temperature?

The SIHB080N60E-GE3 has a continuous drain current rating of 22 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 35 A rating at 25 °C, based on R_thJC = 0.55 °C/W and maximum T_J = 150 °C. Designers must ensure heatsinking maintains case temperature ≤100 °C for sustained 22 A operation.

Does SIHB080N60E-GE3 support logic-level gate drive?

No, SIHB080N60E-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 3.0 V to 5.0 V, and R_DS(on) is specified at V_GS = 10 V. It requires a 10 V gate drive for full enhancement and minimum on-resistance. Using 5 V logic drive results in significantly higher R_DS(on) and unacceptable conduction loss.

What is the significance of Co(er) = 79 pF for SIHB080N60E-GE3 in power converter design?

Co(er) = 79 pF represents the effective output capacitance related to stored energy during V_DS rise. For SIHB080N60E-GE3, this low value directly reduces turn-off switching loss (E_off ∝ Co(er) × V_DS² × f_sw), enabling higher frequency operation in PFC and LLC converters without excessive loss penalty-critical for achieving >96 % efficiency in modern server PSUs.

Can SIHB080N60E-GE3 be used in synchronous rectification applications?

No, SIHB080N60E-GE3 is not optimized for synchronous rectification. Its body diode has t_rr = 441 ns and Q_rr = 5.2 μC-too slow and lossy for SR in high-frequency DC/DC converters. Dedicated SR controllers paired with low-Q_rr, logic-level MOSFETs are recommended instead. SIHB080N60E-GE3 is intended for primary-side switching only.

How is the avalanche rating of SIHB080N60E-GE3 validated and what does EAS = 226 mJ mean in practice?

The SIHB080N60E-GE3's E_AS = 226 mJ is measured per JEDEC JESD24-11 under defined UIS test conditions (V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 4.0 A). This rating confirms single-pulse ruggedness against inductive energy spikes-enabling reliable operation in PFC boost inductors and motor drive freewheeling paths without external snubbers.

SIHB080N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2557 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB080N60E-GE3 FAQ

1.How can I place an order for SIHB080N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB080N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB080N60E-GE3 reliable?

The price and inventory of SIHB080N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB080N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB080N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB080N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB080N60E-GE3?

SIHB080N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB080N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB080N60E-GE3?

For technical support, including SIHB080N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB080N60E-GE3 requirements.

6.How does Aetrix verify that SIHB080N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB080N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB080N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB080N60E-GE3?

All SIHB080N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB080N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB080N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHB080N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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