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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB085N60EF-GE3

Name: SIHB085N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHB085N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB085N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB085N60EF-GE3.pdf

Description:: E SERIES POWER MOSFET WITH FAST

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Inventory:2,000

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Product details

Overview

SIHB085N60EF-GE3 from Vishay Siliconix is a 600 V, 34 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.073 Ω @ 10 V, Q_g = 42 nC (typ), and fast body diode with t_rr = 109 ns - optimized for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHB085N60EF-GE3 datasheet, SIHB085N60EF-GE3 pinout, SIHB085N60EF-GE3 application, or SIHB085N60EF-GE3 equivalent, key selection criteria include avalanche-rated UIS performance (173 mJ), low Co(er) = 107 pF for reduced switching loss, and thermal resistance R_thJC = 0.55 °C/W enabling high-power-density designs without forced airflow.

Technical Context

This EF-series MOSFET employs 4th-generation E-series silicon technology to achieve low figure-of-merit (R_DS(on) × Q_g = 3.07 Ω·nC) and reduced effective output capacitance (Co(er) = 107 pF, Co(tr) = 645 pF). Its gate threshold voltage V_GS(th) ranges 3.0–5.0 V, supporting standard 10 V gate drive while maintaining robust noise immunity.

The integrated fast-recovery body diode delivers t_rr = 109 ns (typ), Q_rr = 0.6 μC, and I_RRM = 11 A - enabling hard-switched topologies without external diode supplementation. dv/dt ruggedness is rated at 100 V/ns (drain-source) and 50 V/ns (reverse diode), critical for ZVS/ZCS resonant converter stability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in telecom rectifiers and PFC stages
R_DS(on) typ @ 10 V	0.073 Ω - enables <1.2 W conduction loss at 34 A continuous drain current, reducing heatsink requirements
Q_g typ	42 nC - lowers gate drive power and allows use of lower-current drivers in high-frequency (>100 kHz) SMPS
t_rr typ	109 ns - minimizes reverse recovery loss and EMI in bridge-leg commutation, especially in continuous conduction mode (CCM) PFC
E_AS	173 mJ - provides single-pulse unclamped inductive switching robustness for motor drive and welding inverter fault conditions
R_thJC	0.55 °C/W - permits >150 W power dissipation with modest heatsinking, supporting compact 1U server PSU form factors
I_D cont @ T_C = 100 °C	21 A - defines usable current envelope under real-world PCB thermal constraints without derating penalties

Pinout & Package

D2PAK (TO-263) package with exposed drain pad on bottom side for optimal thermal transfer; 3-pin surface-mount configuration with G-D-S terminal layout matching JEDEC MO-211 standard.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 2733 pF requires careful gate resistor selection (R_g = 9.1 Ω typical) to balance switching speed vs. ringing
D (Drain)	High-side power node	Connected to exposed copper thermal pad; carries full load current and must be routed over large copper pour for thermal and current handling
S (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; low-inductance Kelvin source connection recommended for accurate R_DS(on)-based current monitoring

Key Features

Feature	Design Value
Fast body diode	t_rr = 109 ns (typ), Q_rr = 0.6 μC - reduces dead-time loss and voltage overshoot in synchronous rectification and half-bridge configurations
Avalanche energy rating	E_AS = 173 mJ - eliminates need for external snubbers in inductive load switching, simplifying board layout in battery charger inverters
Low Co(er)	107 pF - cuts turn-off energy loss by ~30 % versus comparable 600 V MOSFETs, directly improving efficiency in 100–300 kHz PFC stages
High dv/dt immunity	100 V/ns - prevents false turn-on during high-slew-rate switching events in multi-kW industrial motor drives
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc#99912 - supports green manufacturing and export compliance

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1–3 kW rack-mounted PSUs. IC Role / Device Role / Timing Role: High-voltage, high-current main switching device operating at 100–250 kHz with zero-voltage switching (ZVS) capability. Use Value: Low Q_g and Co(er) reduce switching losses by ≥15 % versus prior-gen 600 V MOSFETs, enabling 96 %+ efficiency at full load without liquid cooling.	Use Scenario: Boost PFC stage in -48 V telecom rectifier systems with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) PFC switch handling 20–30 A RMS input current. Use Value: Fast body diode and low R_DS(on) minimize conduction + recovery losses, meeting 80 PLUS Titanium efficiency targets across line voltage range.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-DC boost stage in string inverters converting 600–1000 V DC PV array output to intermediate bus voltage. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in interleaved boost converters operating at 50–100 kHz. Use Value: Avalanche rating ensures reliability during lightning-induced transients on outdoor PV arrays; R_thJC = 0.55 °C/W sustains operation at 65 °C ambient without derating.	Use Scenario: Inverter leg switch in 3–7.5 kW variable frequency drives for HVAC and pump control. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 6–12 kHz PWM inverters driving three-phase induction motors. Use Value: 100 V/ns dv/dt immunity prevents spurious turn-on during high-di/dt motor phase commutation, eliminating gate driver protection complexity.

Server Power Supply

Telecom Rectifier

Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1–3 kW rack-mounted PSUs.

IC Role / Device Role / Timing Role: High-voltage, high-current main switching device operating at 100–250 kHz with zero-voltage switching (ZVS) capability.

Use Value: Low Q_g and Co(er) reduce switching losses by ≥15 % versus prior-gen 600 V MOSFETs, enabling 96 %+ efficiency at full load without liquid cooling.

Use Scenario: Boost PFC stage in -48 V telecom rectifier systems with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) PFC switch handling 20–30 A RMS input current.

Use Value: Fast body diode and low R_DS(on) minimize conduction + recovery losses, meeting 80 PLUS Titanium efficiency targets across line voltage range.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-DC boost stage in string inverters converting 600–1000 V DC PV array output to intermediate bus voltage.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in interleaved boost converters operating at 50–100 kHz.

Use Value: Avalanche rating ensures reliability during lightning-induced transients on outdoor PV arrays; R_thJC = 0.55 °C/W sustains operation at 65 °C ambient without derating.

Use Scenario: Inverter leg switch in 3–7.5 kW variable frequency drives for HVAC and pump control.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 6–12 kHz PWM inverters driving three-phase induction motors.

Use Value: 100 V/ns dv/dt immunity prevents spurious turn-on during high-di/dt motor phase commutation, eliminating gate driver protection complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.065 Ω (lower), Q_g = 52 nC (higher), TO-247 package, no specified E_AS rating	Higher conduction efficiency but increased gate drive loss; larger footprint limits board density	Prefer when minimizing I²R loss dominates over switching loss and space is not constrained
IXFH60N60X	R_DS(on) = 0.075 Ω (similar), Q_g = 48 nC (higher), t_rr = 130 ns (slower), TO-247 package	Slower body diode increases recovery loss in CCM PFC; higher Q_g demands stronger gate driver	Acceptable where cost sensitivity outweighs 2–3 % efficiency penalty and thermal margin exists

Compared with STW62N60M2 and IXFH60N60X, SIHB085N60EF-GE3 offers superior switching efficiency per unit area due to its D2PAK thermal performance and lowest Co(er), making it optimal for space-constrained, air-cooled high-power-density designs where both conduction and switching losses must be minimized simultaneously.

Availability

SIHB085N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHB085N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability across industrial, computing, and telecom markets.

The EF Series - including SIHB085N60EF-GE3 - was engineered specifically for high-frequency, high-efficiency switch-mode power conversion, targeting next-generation PFC, LLC, and isolated DC-DC topologies demanding low R_DS(on), fast switching, and robust avalanche capability.

FAQ

What is the maximum continuous drain current for SIHB085N60EF-GE3 at 100 °C case temperature?

The SIHB085N60EF-GE3 supports 21 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects real-world thermal limits under PCB-mounted conditions and must be used - not the 34 A rating at T_C = 25 °C - for thermal design validation. Derating curves in Figure 10 confirm linear reduction beyond 100 °C.

Does SIHB085N60EF-GE3 have a qualified avalanche rating, and how is it tested?

Yes, SIHB085N60EF-GE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 173 mJ (single pulse). Testing follows JEDEC standard JESD24-1 using L = 28.2 mH, R_g = 25 Ω, V_DD = 120 V, and I_AS = 3.5 A, starting from T_J = 25 °C. This rating is validated across production lots and applies to all units bearing the SIHB085N60EF-GE3 marking.

What is the gate threshold voltage range for SIHB085N60EF-GE3, and why does it matter for drive circuit design?

The gate threshold voltage V_GS(th) for SIHB085N60EF-GE3 is 3.0–5.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing margin against noise-induced false triggering. Designers must verify that gate drive voltage exceeds 5 V minimum under worst-case conditions (e.g., driver drop, PCB trace resistance) to guarantee full enhancement.

How does the body diode performance of SIHB085N60EF-GE3 compare to standard MOSFETs in hard-switched applications?

The SIHB085N60EF-GE3 features an optimized fast body diode with t_rr = 109 ns (typ), Q_rr = 0.6 μC, and I_RRM = 11 A - significantly faster than standard 600 V MOSFETs (typically t_rr > 200 ns). This reduces reverse recovery loss and associated voltage spikes in hard-switched bridge legs, directly improving system efficiency and EMI profile without requiring external SiC Schottky catch diodes.

Is SIHB085N60EF-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHB085N60EF-GE3 is qualified for lead-free reflow per JEDEC J-STD-020 Rev. E, with peak temperature tolerance up to 260 °C for 30 seconds. The D2PAK package uses matte tin-plated leads and Pb-free terminations compliant with RoHS Directive 2011/65/EU. Reflow profiles must maintain thermal gradient ≤ 3 °C/s to prevent die attach voiding.

SIHB085N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 84mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2733 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 184W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB085N60EF-GE3 FAQ

1.How can I place an order for SIHB085N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB085N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB085N60EF-GE3 reliable?

The price and inventory of SIHB085N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB085N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB085N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB085N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB085N60EF-GE3?

SIHB085N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB085N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB085N60EF-GE3?

For technical support, including SIHB085N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB085N60EF-GE3 requirements.

6.How does Aetrix verify that SIHB085N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB085N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB085N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB085N60EF-GE3?

All SIHB085N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB085N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB085N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHB085N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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