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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB100N60E-GE3

Name: SIHB100N60E-GE3
Brand: Vishay Siliconix
SKU: SIHB100N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB100N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB100N60E-GE3.pdf

Description:: MOSFET N-CH 600V 30A D2PAK

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Product details

Overview

SIHB100N60E-GE3 from Vishay Siliconix is a 600 V, 30 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 0.086 Ω R_DS(on) at V_GS = 10 V, 33 nC total gate charge, and avalanche-rated ruggedness for high-efficiency switch-mode power supplies in telecom and server applications.

For engineers reviewing the SIHB100N60E-GE3 datasheet, SIHB100N60E-GE3 pinout, SIHB100N60E-GE3 application, or SIHB100N60E-GE3 equivalent, key selection criteria include its 600 V blocking voltage, low FOM (R_DS(on) × Q_g), Co(er) = 64 pF for reduced switching loss, UIS-rated avalanche energy of 226 mJ, and thermal resistance R_thJC = 0.6 °C/W for high-power density designs.

Technical Context

This E-series MOSFET employs 4th-generation superjunction technology optimized for hard-switched PFC and main-switch topologies. Its low effective output capacitance (Co(er) = 64 pF) and fast switching (t_d(off) ≤ 66 ns, t_f ≤ 40 ns) enable high-frequency operation up to 100 kHz while maintaining low conduction and switching losses.

The device integrates a robust body diode with t_rr = 358–716 ns and Q_rr = 5.1–10.2 μC, supporting ZVS-capable resonant converters and reducing diode-related losses in bridge configurations. Its ±30 V gate rating and 5.0 V maximum V_GS(th) ensure compatibility with standard 12 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for telecom/server SMPS
R_DS(on) typ @ 25 °C	0.086 Ω - enables <1.5 W conduction loss at 13 A continuous drain current
Q_g max	50 nC - determines gate drive power requirement and influences switching speed control
E_AS	226 mJ - ensures reliable unclamped inductive switching in PFC and motor drive fault conditions
R_thJC	0.6 °C/W - allows >200 W power dissipation with moderate heatsinking in D2PAK footprint
C_o(er)	64 pF - reduces turn-off energy loss and improves efficiency in high-voltage hard-switching
I_D cont @ T_C = 100 °C	19 A - defines usable current capability under real-world PCB thermal constraints

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated thermal pad; 3-terminal configuration (G, D, S); drain-connected tab enables direct thermal coupling to heatsink or copper pour.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–10 V logic-level gate drive; 0.7 Ω typical gate input resistance minimizes ringing risk
D (Drain)	High-side power terminal	Connected to internal die backside; electrically and thermally tied to exposed metal tab
S (Source)	Reference node / return path	Common connection point for gate driver return, current sensing, and source degeneration resistors

Key Features

Feature	Design Value
4th-generation E-series superjunction architecture	Delivers 30 % lower R_DS(on) × Q_g FOM vs. prior generation, enabling higher efficiency at 100 kHz
Avalanche energy rating (E_AS)	226 mJ single-pulse - eliminates need for external snubbers in inductive load switching
Low effective output capacitance (Co(er))	64 pF - reduces turn-off loss by ~40 % compared to legacy 600 V MOSFETs with similar R_DS(on)
Body diode reverse recovery performance	Q_rr = 5.1–10.2 μC - enables stable operation in synchronous rectification and LLC half-bridge topologies
Lead (Pb)-free and halogen-free construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for D2PAK

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 1 kW+ 48 V output telecom rectifier modules operating at 75–100 kHz. IC Role / Device Role / Timing Role: High-voltage main switch in active clamp forward or phase-shifted full-bridge topology. Use Value: 0.086 Ω R_DS(on) and 33 nC Q_g reduce combined conduction + switching loss to <2.1 W at 13 A/480 V, improving system efficiency by 0.8 % over predecessor devices.	Use Scenario: Boost PFC stage in 3 kW distributed power architecture (DPA) systems with universal AC input. IC Role / Device Role / Timing Role: Critical conduction mode (CrM) or continuous conduction mode (CCM) PFC switch handling 20 A RMS input current. Use Value: 226 mJ E_AS withstands line surges and inrush transients without failure; Co(er) = 64 pF lowers boost diode stress during zero-current switching transitions.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string inverters converting 600–1000 V DC to 230 V AC at 16–20 kHz. IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET hybrid inverter leg with active short-circuit protection. Use Value: 600 V V_DS rating accommodates 1000 V DC bus with margin; t_r/t_f ≤ 68/40 ns ensures clean PWM edge fidelity and minimal shoot-through risk.	Use Scenario: Inverter output stage in 5–10 HP variable frequency drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Low-loss switching element in 3-phase bridge delivering 15–25 A RMS motor current at 4 kHz carrier frequency. Use Value: R_thJC = 0.6 °C/W enables 19 A continuous current at 100 °C case temperature without derating; body diode t_rr < 716 ns prevents cross-conduction in 6-step commutation.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 1 kW+ 48 V output telecom rectifier modules operating at 75–100 kHz.

IC Role / Device Role / Timing Role: High-voltage main switch in active clamp forward or phase-shifted full-bridge topology.

Use Value: 0.086 Ω R_DS(on) and 33 nC Q_g reduce combined conduction + switching loss to <2.1 W at 13 A/480 V, improving system efficiency by 0.8 % over predecessor devices.

Use Scenario: Boost PFC stage in 3 kW distributed power architecture (DPA) systems with universal AC input.

IC Role / Device Role / Timing Role: Critical conduction mode (CrM) or continuous conduction mode (CCM) PFC switch handling 20 A RMS input current.

Use Value: 226 mJ E_AS withstands line surges and inrush transients without failure; Co(er) = 64 pF lowers boost diode stress during zero-current switching transitions.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string inverters converting 600–1000 V DC to 230 V AC at 16–20 kHz.

IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET hybrid inverter leg with active short-circuit protection.

Use Value: 600 V V_DS rating accommodates 1000 V DC bus with margin; t_r/t_f ≤ 68/40 ns ensures clean PWM edge fidelity and minimal shoot-through risk.

Use Scenario: Inverter output stage in 5–10 HP variable frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Low-loss switching element in 3-phase bridge delivering 15–25 A RMS motor current at 4 kHz carrier frequency.

Use Value: R_thJC = 0.6 °C/W enables 19 A continuous current at 100 °C case temperature without derating; body diode t_rr < 716 ns prevents cross-conduction in 6-step commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 57 A, R_DS(on) = 0.065 Ω, Q_g = 62 nC, D²PAK package	Higher current rating but 24 % higher Q_g; requires stronger gate driver	Preferred where peak current >25 A is needed and gate drive capability supports 62 nC
IXFH50N60P	600 V, 50 A, R_DS(on) = 0.085 Ω, Q_g = 120 nC, TO-247 package	Same R_DS(on) but 2.4× higher Q_g; TO-247 offers better thermal performance but larger footprint	Chosen when board space permits TO-247 and thermal budget exceeds 200 W

Compared with STW62N60M2 and IXFH50N60P, SIHB100N60E-GE3 delivers optimal balance of low gate charge (33 nC), compact D2PAK footprint, and proven avalanche ruggedness-making it ideal for space-constrained, high-frequency PFC and SMPS designs where driver strength and layout area are constrained.

Availability

SIHB100N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial production programs.

Supply support for SIHB100N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SIHB100N60E-GE3 belongs to Vishay's E-series superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability switch-mode power conversion in telecom, computing, and renewable energy infrastructure.

FAQ

What is the maximum continuous drain current for SIHB100N60E-GE3 at 100 °C case temperature?

The SIHB100N60E-GE3 supports 19 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects real-world thermal limits under PCB-mounted conditions with adequate copper area and airflow, and must be verified against actual board-level thermal measurements in the final design. The SIHB100N60E-GE3 datasheet confirms this rating applies with V_GS = 10 V and junction temperature not exceeding 150 °C.

Does SIHB100N60E-GE3 have avalanche capability, and how is it rated?

Yes, SIHB100N60E-GE3 is fully avalanche-rated with a single-pulse unclamped inductive switching (UIS) energy rating of 226 mJ, tested per JEDEC standard JESD24-1. This rating was measured at V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.0 A. The SIHB100N60E-GE3 uses rugged superjunction cell design to sustain repetitive avalanche events without parameter degradation, making it suitable for PFC and motor drive fault conditions.

What is the gate threshold voltage range for SIHB100N60E-GE3, and why does it matter?

The SIHB100N60E-GE3 has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental conduction from noise or leakage currents. Because the SIHB100N60E-GE3 is not a logic-level device, using 5 V drive will result in incomplete enhancement and excessive R_DS(on); full specification compliance requires V_GS ≥ 10 V as stated in the SIHB100N60E-GE3 datasheet.

How does the effective output capacitance (Co(er)) of SIHB100N60E-GE3 impact switching performance?

The SIHB100N60E-GE3 features Co(er) = 64 pF - an energy-equivalent capacitance derived from C_oss during V_DS rise from 0 % to 80 % of V_DSS. This low value directly reduces turn-off switching loss (E_off ∝ ½ × Co(er) × V_DS²), enabling higher frequency operation with lower heat generation. Compared to legacy 600 V MOSFETs with similar R_DS(on), the SIHB100N60E-GE3 achieves up to 40 % lower E_off, a key advantage confirmed in Vishay's application note AN826 for high-efficiency SMPS designs using the SIHB100N60E-GE3.

Is SIHB100N60E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHB100N60E-GE3 is qualified for lead-free reflow soldering with a peak temperature of 260 °C for 10 seconds, per JEDEC J-STD-020. Its D2PAK (TO-263) package meets IPC/JEDEC standards for moisture sensitivity level (MSL) 1 and supports standard Pb-free assembly lines. The "-GE3" suffix explicitly denotes lead (Pb)-free and halogen-free construction, and the SIHB100N60E-GE3 datasheet specifies full compliance with RoHS Directive 2011/65/EU and Vishay's material declaration document 99912.

SIHB100N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1851 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB100N60E-GE3 FAQ

1.How can I place an order for SIHB100N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB100N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB100N60E-GE3 reliable?

The price and inventory of SIHB100N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB100N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB100N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB100N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB100N60E-GE3?

SIHB100N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB100N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB100N60E-GE3?

For technical support, including SIHB100N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB100N60E-GE3 requirements.

6.How does Aetrix verify that SIHB100N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB100N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB100N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB100N60E-GE3?

All SIHB100N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB100N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB100N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHB100N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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