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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB105N60EF-GE3

Name: SIHB105N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHB105N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB105N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB105N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 29A D2PAK

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Product details

Overview

SIHB105N60EF-GE3 from Vishay Siliconix is a 600 V, 29 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 0.088 Ω R_DS(on) at V_GS = 10 V, 53 nC total gate charge, and fast body diode with 125 ns reverse recovery time. It is engineered for high-efficiency switching in telecom and server power supplies, PFC stages, and industrial inverters.

For engineers reviewing the SIHB105N60EF-GE3 datasheet, SIHB105N60EF-GE3 pinout, SIHB105N60EF-GE3 application, or SIHB105N60EF-GE3 equivalent, key selection criteria include its 600 V blocking rating, low FOM (R_DS(on) × Q_g), avalanche-rated UIS capability, and optimized Co(er) for reduced switching loss in hard-switched topologies.

Technical Context

This MOSFET employs Vishay's 4th-generation EF-series silicon technology, delivering improved conduction and switching trade-offs via reduced effective output capacitance (Co(er) = 63 pF) and low gate-drain charge (Q_gd = 11 nC). Its fast intrinsic body diode supports ZVS-capable designs and reduces snubber requirements in resonant converters.

The device is rated for repetitive unclamped inductive switching (UIS) up to 226 mJ and operates across -55 °C to +150 °C junction temperature. Thermal resistance R_thJC is 0.6 °C/W, enabling high-power density mounting on copper-clad PCBs or heatsinks without thermal derating below 100 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 400 V DC bus systems with ≥50 % voltage margin for surge and ringing
R_DS(on) typ @ 10 V	0.088 Ω - Enables <1.5 W conduction loss at 13 A continuous drain current
Q_g max	53 nC - Determines gate drive power requirement and switching speed in 100–500 kHz SMPS
E_AS	226 mJ - Confirmed single-pulse avalanche energy for robustness during transient overloads
t_rr typ	125 ns - Fast body diode recovery minimizes cross-conduction loss in synchronous rectification
R_thJC	0.6 °C/W - Allows >150 W dissipation with ≤90 °C temperature rise above heatsink
C_o(er)	63 pF - Energy-related output capacitance directly impacts turn-off loss in hard-switched converters

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated thermal pad (drain-connected), 3-terminal configuration: Gate (G), Drain (D), Source (S). Standard JEDEC outline; recommended footprint per Vishay AN826.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives 0–10 V logic-level drive; requires ≥10 V for full R_DS(on) specification compliance
D	Drain (high-side switch node)	Connected to thermal pad; carries full load current and withstands 600 V transients
S	Source (power return path)	Reference for gate drive; ties to low-side switch or ground; carries return current and diode conduction

Key Features

Feature	Design Value
Fast body diode	125 ns t_rr, 0.8–1.6 μC Q_rr - Reduces dead-time losses and enables quasi-resonant operation
Low R_DS(on) × Q_g FOM	4.66 Ω·nC - Optimized for high-frequency, high-efficiency PFC and LLC primary switches
Avalanche-rated	226 mJ E_AS - Eliminates need for external clamping in inductive load switching
Reduced C_oss(er)	63 pF - Lowers turn-off energy loss and improves light-load efficiency in flyback/forward converters
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay Green Standard 99912 - Suitable for automotive and industrial eco-design

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3.3 kW 48 V output telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, operating at 200 kHz with synchronous rectification on secondary. Use Value: 0.088 Ω R_DS(on) and 125 ns t_rr reduce conduction and body-diode recovery losses, improving full-load efficiency by ≥0.4 % vs. legacy 650 V MOSFETs.	Use Scenario: Boost PFC stage in dual-output 1.5 kW server PSU with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch, driven by dedicated PFC controller with 65 kHz switching frequency. Use Value: Low Q_gd/Q_g ratio (11/53 nC) ensures clean turn-off with minimal Miller-induced oscillation, supporting stable high-power factor correction.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in inverter bridge leg, operating at 16 kHz with unipolar PWM modulation. Use Value: 600 V rating and 226 mJ UIS energy allow direct substitution in existing layouts without snubber redesign or voltage derating.	Use Scenario: Half-bridge in 7.5 kW induction heating inverter using voltage-source resonant topology. IC Role / Device Role / Timing Role: High-frequency inverter switch (100–300 kHz), conducting bidirectional current through body diode during zero-voltage transitions. Use Value: Fast body diode with low Q_rr (0.8–1.6 μC) minimizes reverse recovery stress and EMI generation during hard commutation events.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3.3 kW 48 V output telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, operating at 200 kHz with synchronous rectification on secondary.

Use Value: 0.088 Ω R_DS(on) and 125 ns t_rr reduce conduction and body-diode recovery losses, improving full-load efficiency by ≥0.4 % vs. legacy 650 V MOSFETs.

Use Scenario: Boost PFC stage in dual-output 1.5 kW server PSU with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch, driven by dedicated PFC controller with 65 kHz switching frequency.

Use Value: Low Q_gd/Q_g ratio (11/53 nC) ensures clean turn-off with minimal Miller-induced oscillation, supporting stable high-power factor correction.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in inverter bridge leg, operating at 16 kHz with unipolar PWM modulation.

Use Value: 600 V rating and 226 mJ UIS energy allow direct substitution in existing layouts without snubber redesign or voltage derating.

Use Scenario: Half-bridge in 7.5 kW induction heating inverter using voltage-source resonant topology.

IC Role / Device Role / Timing Role: High-frequency inverter switch (100–300 kHz), conducting bidirectional current through body diode during zero-voltage transitions.

Use Value: Fast body diode with low Q_rr (0.8–1.6 μC) minimizes reverse recovery stress and EMI generation during hard commutation events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 58 A, R_DS(on) = 0.065 Ω, Q_g = 65 nC, TO-247 package	Higher current rating but larger footprint and higher gate charge; requires stronger gate driver	Preferred where higher continuous current (>35 A) and through-hole mounting are required
IXFH50N60X3	600 V, 50 A, R_DS(on) = 0.075 Ω, Q_g = 62 nC, TO-247 package	Superjunction X3 process yields lower R_DS(on) but slower t_rr (220 ns); no avalanche rating	Selected when lowest conduction loss dominates, and avalanche robustness is not critical

Compared with STW62N60M2 and IXFH50N60X3, the SIHB105N60EF-GE3 offers superior thermal performance in surface-mount form factor (R_thJC = 0.6 °C/W), faster body diode recovery, and verified UIS capability-making it optimal for space-constrained, high-reliability telecom and server power designs.

Availability

SIHB105N60EF-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHB105N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high reliability, power efficiency, and ruggedized packaging.

The EF Series MOSFETs, including SIHB105N60EF-GE3, were developed specifically for high-frequency, high-efficiency switching in enterprise-grade power conversion-targeting PFC, LLC, and soft-switched topologies where low Q_g, fast body diode, and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current rating for SIHB105N60EF-GE3 at 100 °C case temperature?

The SIHB105N60EF-GE3 has a continuous drain current rating of 19 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 29 A rating at 25 °C case temperature, based on a linear derating factor of 1.67 W/°C and R_thJC = 0.6 °C/W. The SIHB105N60EF-GE3 must be mounted on an adequately sized copper area or heatsink to sustain this current reliably.

Does SIHB105N60EF-GE3 have a fully characterized fast body diode, and what are its key parameters?

Yes, the SIHB105N60EF-GE3 integrates a fast-recovery body diode with documented parameters: typical reverse recovery time (t_rr) of 125 ns, reverse recovery charge (Q_rr) of 0.8–1.6 μC, and peak reverse recovery current (I_RRM) of 12 A. These values are measured under standardized conditions (T_J = 25 °C, I_F = 13 A, di/dt = 100 A/μs, V_R = 400 V). The SIHB105N60EF-GE3 body diode enables efficient synchronous rectification and soft-switching in resonant converters.

Is SIHB105N60EF-GE3 suitable for use in avalanche conditions, and what is its rated energy?

Yes, the SIHB105N60EF-GE3 is explicitly rated for repetitive unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 226 mJ, tested per JEDEC standard JESD24-1. This rating is confirmed at V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4 A. The SIHB105N60EF-GE3 can safely absorb transient inductive energy without failure, eliminating need for external clamping in many hard-switched applications.

What is the gate threshold voltage range for SIHB105N60EF-GE3, and how does it affect drive requirements?

The gate-source threshold voltage (V_GS(th)) for SIHB105N60EF-GE3 is specified from 3 V to 5 V at V_DS = V_GS and I_D = 250 μA. This confirms it is a standard-level MOSFET requiring ≥10 V gate drive for full R_DS(on) performance (0.088 Ω). The SIHB105N60EF-GE3 is not logic-level compatible; using 5 V drive results in significantly higher on-resistance and conduction loss, so a 12 V gate driver with ≥1 A peak current is recommended.

What package type does SIHB105N60EF-GE3 use, and what are its thermal characteristics?

The SIHB105N60EF-GE3 uses the D2PAK (TO-263AB) surface-mount package with a drain-connected thermal pad. Its maximum junction-to-case thermal resistance (R_thJC) is 0.6 °C/W, enabling high-power dissipation with minimal temperature rise. The SIHB105N60EF-GE3 requires a minimum recommended PCB pad layout per Vishay AN826, including exposed copper area under the thermal pad and multiple thermal vias to inner ground planes for optimal heat transfer.

SIHB105N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 102mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1804 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB105N60EF-GE3 FAQ

1.How can I place an order for SIHB105N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB105N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB105N60EF-GE3 reliable?

The price and inventory of SIHB105N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB105N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB105N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB105N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB105N60EF-GE3?

SIHB105N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB105N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB105N60EF-GE3?

For technical support, including SIHB105N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB105N60EF-GE3 requirements.

6.How does Aetrix verify that SIHB105N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB105N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB105N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB105N60EF-GE3?

All SIHB105N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB105N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB105N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHB105N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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