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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB10N40D-GE3

Name: SIHB10N40D-GE3
Brand: Vishay Siliconix
SKU: SIHB10N40D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB10N40D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB10N40D-GE3.pdf

Description:: MOSFET N-CH 400V 10A TO263

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Product details

Overview

SIHB10N40D-GE3 from Vishay Siliconix is a 400 V, 10 A N-channel D2PAK (TO-263) Power MOSFET with R_DS(on) = 0.6 Ω @ V_GS = 10 V, Q_g = 30 nC, and avalanche-rated (E_AS = 194 mJ). It serves as a high-voltage switching element in SMPS primary-side circuits, motor drive half-bridges, and induction heating inverters.

For engineers reviewing the SIHB10N40D-GE3 datasheet, SIHB10N40D-GE3 pinout, SIHB10N40D-GE3 application, or SIHB10N40D-GE3 equivalent, key selection criteria include its 400 V V_DS, low 0.6 Ω on-resistance at 10 V gate drive, 30 nC total gate charge, rugged body diode (t_rr = 230 ns, Q_rr = 1.6 μC), and D2PAK thermal performance (R_thJC = 0.85 °C/W).

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage switching with low capacitive losses: C_iss = 526 pF, C_oss = 59 pF, and C_rss = 9 pF at V_DS = 100 V. Its gate threshold voltage (V_GS(th) = 3–5 V) ensures reliable turn-on with standard 10 V logic-level drivers.

The device features an integral fast-recovery body diode rated for 10 A continuous source-drain current and 40 A pulsed operation, with t_rr = 230 ns and Q_rr = 1.6 μC under defined conditions (T_J = 25 °C, I_F = 5 A, dI/dt = 100 A/μs). It is fully avalanche-rated (E_AS = 194 mJ) and specified for operation from –55 °C to +150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Maximum blocking voltage in off-state; supports 380 V AC rectified bus designs with margin.
R_DS(on) max	0.6 Ω @ V_GS = 10 V - Defines conduction loss at 10 A: P_cond ≈ 60 W; requires heatsinking per R_thJC = 0.85 °C/W.
Q_g max	30 nC - Total gate charge determines driver power requirement and switching speed; enables <24 ns turn-off delay with 9.1 Ω gate resistor.
E_AS	194 mJ - Single-pulse unclamped inductive switching energy rating; validates robustness in hard-switched flyback or resonant converters.
t_rr / Q_rr	230 ns / 1.6 μC - Body diode recovery metrics critical for ZVS/ZCS soft-switching topologies and synchronous rectification stress analysis.
R_thJC	0.85 °C/W - Junction-to-case thermal resistance enables direct mounting to heatsink; supports 147 W continuous dissipation at T_C = 25 °C.

Pinout & Package

D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection; surface-mount, single-channel N-channel MOSFET.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V gate drive signal; input capacitance C_iss = 526 pF dictates driver strength requirements.
D (Drain)	High-side power output	Connected to high-voltage DC bus (up to 400 V); electrically and thermally tied to exposed backside metal pad.
S (Source)	Power return / reference	Common node for load current return and gate drive reference; defines V_GS control loop path.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	18 Ω·nC - Enables high-efficiency, high-frequency switching in 100–500 kHz SMPS without excessive gate drive loss.
Avalanche energy rating	194 mJ - Guarantees safe operation during transient overloads or inductive kickback without failure.
Fast body diode	t_rr = 230 ns, Q_rr = 1.6 μC - Reduces switching loss and EMI in freewheeling paths of half-bridge and LLC resonant converters.
High dV/dt immunity	24 V/ns (T_J = 125 °C) - Resists false turn-on in high-noise, high-dV/dt environments such as motor drives and welding inverters.
Lead (Pb)-free & Halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc. 99912.

Applications

Server SMPS Primary Switch	Induction Heating Inverter
Use Scenario: High-efficiency 1–3 kW server power supply operating at 100–300 kHz with active clamp or LLC topology. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC bus and 10 A peak current; operates in hard- or soft-switched mode. Use Value: Low R_DS(on) minimizes conduction loss; low Q_g and fast switching reduce driver loss and enable higher frequency operation.	Use Scenario: 2–5 kW resonant inverter driving series-LC tank in domestic or industrial induction cooktops. IC Role / Device Role / Timing Role: Half-bridge upper-leg switch subjected to repetitive 20–100 kHz switching and high di/dt body diode commutation. Use Value: Rugged body diode (Q_rr = 1.6 μC, t_rr = 230 ns) reduces reverse recovery loss and EMI; avalanche rating handles LC ringing transients.
Industrial Motor Drive	Battery Charger Output Stage
Use Scenario: 3-phase inverter stage in 5–15 HP variable frequency drives for pumps and compressors. IC Role / Device Role / Timing Role: Phase-leg high-side switch in IGBT/MOSFET hybrid or all-MOSFET inverter; conducts up to 10 A RMS with PWM gating. Use Value: 150 °C max junction temperature and 0.85 °C/W R_thJC support sustained operation under high ambient and load cycling.	Use Scenario: Isolated DC–DC stage in 1–3 kW EV or industrial battery chargers with 400 V output bus. IC Role / Device Role / Timing Role: Synchronous rectifier or active clamp switch in secondary-side regulation or primary-side ZVS flyback. Use Value: Fast, low-loss body diode enables efficient freewheeling; 400 V V_DS accommodates reflected voltage spikes in transformer-coupled topologies.

Server SMPS Primary Switch

Induction Heating Inverter

Use Scenario: High-efficiency 1–3 kW server power supply operating at 100–300 kHz with active clamp or LLC topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC bus and 10 A peak current; operates in hard- or soft-switched mode.

Use Value: Low R_DS(on) minimizes conduction loss; low Q_g and fast switching reduce driver loss and enable higher frequency operation.

Use Scenario: 2–5 kW resonant inverter driving series-LC tank in domestic or industrial induction cooktops.

IC Role / Device Role / Timing Role: Half-bridge upper-leg switch subjected to repetitive 20–100 kHz switching and high di/dt body diode commutation.

Use Value: Rugged body diode (Q_rr = 1.6 μC, t_rr = 230 ns) reduces reverse recovery loss and EMI; avalanche rating handles LC ringing transients.

Industrial Motor Drive

Battery Charger Output Stage

Use Scenario: 3-phase inverter stage in 5–15 HP variable frequency drives for pumps and compressors.

IC Role / Device Role / Timing Role: Phase-leg high-side switch in IGBT/MOSFET hybrid or all-MOSFET inverter; conducts up to 10 A RMS with PWM gating.

Use Value: 150 °C max junction temperature and 0.85 °C/W R_thJC support sustained operation under high ambient and load cycling.

Use Scenario: Isolated DC–DC stage in 1–3 kW EV or industrial battery chargers with 400 V output bus.

IC Role / Device Role / Timing Role: Synchronous rectifier or active clamp switch in secondary-side regulation or primary-side ZVS flyback.

Use Value: Fast, low-loss body diode enables efficient freewheeling; 400 V V_DS accommodates reflected voltage spikes in transformer-coupled topologies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK40ZFP	400 V, 10 A, R_DS(on) = 0.65 Ω, Q_g = 32 nC, TO-220FP package (lower thermal performance: R_thJC = 1.25 °C/W)	Limited to lower-power (<1 kW) or forced-air-cooled applications due to higher thermal resistance and no exposed drain pad	Choose STP10NK40ZFP only when board space constraints prohibit D2PAK or when legacy TO-220FP footprint is required.
IXTH10N40L2	400 V, 10 A, R_DS(on) = 0.55 Ω, Q_g = 35 nC, TO-247 package (R_thJC = 0.55 °C/W), enhanced body diode (t_rr = 180 ns)	Better thermal and switching performance but larger footprint; suited for >2 kW designs with aggressive cooling	Select IXTH10N40L2 where higher power density, lower conduction loss, or faster body diode recovery is prioritized over cost and compactness.

Compared with STP10NK40ZFP and IXTH10N40L2, SIHB10N40D-GE3 delivers optimal balance of D2PAK compactness, 0.85 °C/W thermal resistance, and 194 mJ avalanche robustness-making it ideal for space-constrained 1–2 kW industrial and telecom power stages where reliability under transient stress is critical.

Availability

SIHB10N40D-GE3 is available at Aetrix Electronics and suitable for server SMPS, induction heating inverters, industrial motor drives, battery charger output stages, and welding power modules requiring stable component supply across production lifecycles.

Supply support for SIHB10N40D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on efficiency, ruggedness, and reliability.

The SIHB10N40D-GE3 belongs to Vishay's D Series Power MOSFET family, engineered for high-voltage switching in demanding industrial, telecom, and consumer power conversion systems where low R_DS(on) × Q_g, avalanche capability, and fast body diode recovery are essential.

FAQ

What is the maximum continuous drain current rating for SIHB10N40D-GE3 at 100 °C case temperature?

The SIHB10N40D-GE3 has a continuous drain current rating of 6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and must be verified against actual board layout, heatsink interface, and ambient conditions. The full 10 A rating applies only at T_C = 25 °C.

Does SIHB10N40D-GE3 support logic-level gate drive?

No, SIHB10N40D-GE3 is not a logic-level MOSFET. Its gate threshold voltage range is 3–5 V, but it is characterized and optimized for 10 V gate drive (R_DS(on), Q_g, and switching times are all specified at V_GS = 10 V). Driving it with 5 V may result in incomplete turn-on and excessive conduction loss.

What is the significance of the 194 mJ E_AS rating for SIHB10N40D-GE3?

The 194 mJ single-pulse avalanche energy rating (E_AS) means SIHB10N40D-GE3 can safely absorb inductive energy during unclamped inductive switching events-such as transformer leakage spikes or short-circuit faults-without destructive failure. This is validated per test condition: V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, I_AS = 13 A.

How does the body diode performance of SIHB10N40D-GE3 compare to standard MOSFETs?

The SIHB10N40D-GE3 features an optimized body diode with t_rr = 230 ns and Q_rr = 1.6 μC at T_J = 25 °C, significantly faster than typical high-voltage MOSFETs. This reduces reverse recovery loss and associated EMI in hard- and soft-switched topologies where the body diode conducts during dead-time intervals.

Is SIHB10N40D-GE3 suitable for use in automotive applications?

SIHB10N40D-GE3 is not qualified to AEC-Q101 and is not recommended for automotive safety-critical systems. While its operating temperature range (–55 °C to +150 °C) meets automotive ambient requirements, Vishay documentation explicitly states that its products are not designed for medical, life-saving, or life-sustaining applications-including automotive systems where failure could result in personal injury or death.

SIHB10N40D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 526 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB10N40D-GE3 FAQ

1.How can I place an order for SIHB10N40D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB10N40D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB10N40D-GE3 reliable?

The price and inventory of SIHB10N40D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB10N40D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB10N40D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB10N40D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB10N40D-GE3?

SIHB10N40D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB10N40D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB10N40D-GE3?

For technical support, including SIHB10N40D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB10N40D-GE3 requirements.

6.How does Aetrix verify that SIHB10N40D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB10N40D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB10N40D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB10N40D-GE3?

All SIHB10N40D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB10N40D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB10N40D-GE3 part is unused and in its original packaging.

Return procedure for SIHB10N40D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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