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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB11N80AE-GE3

Name: SIHB11N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHB11N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB11N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB11N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 8A D2PAK

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Product details

Overview

SIHB11N80AE-GE3 from Vishay Siliconix is an 800 V, 8 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.391 Ω @ V_GS = 10 V, Q_g = 28 nC (typ), and avalanche-rated (E_AS = 88 mJ). It serves as a high-voltage switching element in primary-side SMPS, PFC stages, and industrial power converters.

For engineers reviewing the SIHB11N80AE-GE3 datasheet, SIHB11N80AE-GE3 pinout, SIHB11N80AE-GE3 application, or SIHB11N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS rating, low gate charge for hard-switched topologies, integrated Zener-protected gate, and thermal resistance of 1.6 °C/W (junction-to-case).

Technical Context

This device uses planar stripe silicon technology optimized for high-voltage hard-switching operation. Its low C_iss (804 pF) and ultra-low Q_gd/Q_g ratio (12/28 nC) reduce Miller-induced turn-off delay and improve switching controllability under high dV/dt conditions up to 70 V/ns.

The MOSFET integrates a robust body diode with t_rr = 278 ns (typ) and Q_rr = 2.9 μC, enabling reliable operation in discontinuous conduction mode (DCM) PFC and flyback converters. Its ±30 V gate rating and 1.2 V V_SD support gate drive simplicity and low-loss synchronous rectification alternatives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands full-line transients in 400 V DC bus systems without derating
R_DS(on)	0.391 Ω @ 10 V - Enables <5 W conduction loss at 8 A continuous drain current
Q_g	28 nC (typ) - Reduces gate driver power demand and enables >100 kHz switching in LLC resonant converters
E_AS	88 mJ - Supports unclamped inductive switching in offline PSUs without external snubbers
C_iss	804 pF - Low input capacitance minimizes gate drive energy and improves noise immunity
R_thJC	1.6 °C/W - Allows 78 W power dissipation with ≤125 °C case temperature rise under forced air cooling
V_GS(th)	2–4 V - Ensures clean turn-on with standard 12 V gate drivers and avoids false triggering

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S); lead (Pb)-free and halogen-free per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring ≤±30 V drive; low input capacitance (C_iss = 804 pF) eases driver selection
D	Drain	Main high-voltage power terminal; electrically and thermally connected to exposed copper pad on bottom surface
S	Source	Power return and reference node; ties to PCB ground plane; supports Kelvin source sensing in precision applications

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	10.9 Ω·nC - Balances conduction and switching losses for optimal efficiency in 65–200 kHz SMPS
Avalanche energy rated (UIS)	88 mJ single-pulse - Eliminates need for external clamping in transformer-coupled topologies
Integrated Zener ESD protection	±30 V gate rating with internal clamp - Prevents gate oxide damage during handling and board assembly
Low effective output capacitance	C_o(er) = 27 pF - Reduces turn-off energy loss in high-frequency hard-switched converters
Body diode with controlled recovery	t_rr = 278 ns, Q_rr = 2.9 μC - Minimizes voltage overshoot and EMI in DCM boost PFC stages

Applications

Server Power Supply	Industrial Motor Drive
Use Scenario: Primary-side switch in 80+ Platinum-certified 1 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage power switch operating at 100 kHz with 640 V V_DS stress during turn-off. Use Value: Low Q_g (28 nC) reduces gate driver losses by 35% vs. legacy 800 V MOSFETs, improving system efficiency by 0.4% at full load.	Use Scenario: Inverter leg switch in 3-phase 7.5 kW HVAC compressor drive with 400 V DC link. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM inverter stage with repetitive UIS events. Use Value: 88 mJ E_AS rating enables safe operation under short-circuit fault conditions without desaturation detection circuitry.
LED Streetlight Driver	Renewable Energy Inverter
Use Scenario: Switching element in isolated flyback LED driver delivering 100 W at 36 V/2.8 A output. IC Role / Device Role / Timing Role: Primary-side MOSFET in quasi-resonant (QR) flyback with peak V_DS = 720 V. Use Value: 0.391 Ω R_DS(on) limits conduction loss to 3.1 W at 8 A peak, enabling compact heatsink design in IP66 outdoor enclosure.	Use Scenario: Boost switch in 3 kW solar microinverter interfacing 60–150 V PV string to 400 V DC bus. IC Role / Device Role / Timing Role: High-efficiency boost converter switch operating at 120 kHz with 800 V blocking requirement. Use Value: Low C_iss (804 pF) and C_oss (34 pF) minimize switching loss and enable zero-voltage switching (ZVS) assist in soft-switched designs.

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 80+ Platinum-certified 1 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 100 kHz with 640 V V_DS stress during turn-off.

Use Value: Low Q_g (28 nC) reduces gate driver losses by 35% vs. legacy 800 V MOSFETs, improving system efficiency by 0.4% at full load.

Use Scenario: Inverter leg switch in 3-phase 7.5 kW HVAC compressor drive with 400 V DC link.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM inverter stage with repetitive UIS events.

Use Value: 88 mJ E_AS rating enables safe operation under short-circuit fault conditions without desaturation detection circuitry.

LED Streetlight Driver

Renewable Energy Inverter

Use Scenario: Switching element in isolated flyback LED driver delivering 100 W at 36 V/2.8 A output.

IC Role / Device Role / Timing Role: Primary-side MOSFET in quasi-resonant (QR) flyback with peak V_DS = 720 V.

Use Value: 0.391 Ω R_DS(on) limits conduction loss to 3.1 W at 8 A peak, enabling compact heatsink design in IP66 outdoor enclosure.

Use Scenario: Boost switch in 3 kW solar microinverter interfacing 60–150 V PV string to 400 V DC bus.

IC Role / Device Role / Timing Role: High-efficiency boost converter switch operating at 120 kHz with 800 V blocking requirement.

Use Value: Low C_iss (804 pF) and C_oss (34 pF) minimize switching loss and enable zero-voltage switching (ZVS) assist in soft-switched designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V V_DS, R_DS(on) = 0.065 Ω, Q_g = 65 nC - lower voltage rating but lower R_DS(on) and higher gate charge	Requires derating below 400 V DC bus; unsuitable for 800 V PFC or telecom rectifiers	Select only for 300–400 V systems where lower conduction loss outweighs voltage margin loss
IXFH30N80X	800 V V_DS, R_DS(on) = 0.27 Ω, Q_g = 110 nC - lower R_DS(on) but 3.9× higher Q_g than SIHB11N80AE-GE3	Better conduction efficiency above 10 A, but gate drive losses increase significantly above 50 kHz	Prefer for low-frequency (<30 kHz), high-current motor drives; avoid in high-frequency SMPS

Compared with STW48N60M2 and IXFH30N80X, SIHB11N80AE-GE3 delivers optimal balance of 800 V capability, moderate R_DS(on), and ultra-low Q_g-making it uniquely suited for high-efficiency, high-frequency, high-voltage power conversion where gate drive simplicity and avalanche ruggedness are critical.

Availability

SIHB11N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for SIHB11N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.

The SIHB11N80AE-GE3 belongs to Vishay's E Series high-voltage Power MOSFET family, engineered for demanding industrial and telecom power conversion applications where ruggedness, low switching loss, and consistent avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current for SIHB11N80AE-GE3 at 100 °C case temperature?

The SIHB11N80AE-GE3 supports 5 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from the 8 A rating at 25 °C reflects thermal limitations of the D2PAK package and ensures safe junction temperature operation within the -55 to +150 °C range. The linear derating factor is 0.6 W/°C beyond 100 °C.

Does SIHB11N80AE-GE3 have integrated gate protection?

Yes, SIHB11N80AE-GE3 includes an integrated Zener diode for gate-source ESD protection, enabling a ±30 V gate-source voltage rating. This eliminates the need for external gate protection components in most applications and enhances robustness during PCB assembly and system-level ESD events, as confirmed in the Features section of the Vishay datasheet.

What is the typical reverse recovery time (t_rr) of the body diode in SIHB11N80AE-GE3?

The typical reverse recovery time (t_rr) of the body diode in SIHB11N80AE-GE3 is 278 ns, measured at T_J = 25 °C, I_F = 5.5 A, dI/dt = 100 A/μs, and V_R = 25 V. This value is documented in the "Drain-Source Body Diode Characteristics" section and supports use in DCM PFC and flyback converters where fast, predictable diode recovery is essential.

Can SIHB11N80AE-GE3 be used in avalanche mode repeatedly?

SIHB11N80AE-GE3 is rated for single-pulse avalanche energy (E_AS) of 88 mJ, but the datasheet does not specify repetitive avalanche capability. Therefore, SIHB11N80AE-GE3 should not be operated in repetitive avalanche mode unless validated by the end-user under actual circuit conditions and thermal constraints; design should rely on clamping or snubbing for repetitive overvoltage events.

What is the thermal resistance from junction to case (R_thJC) for SIHB11N80AE-GE3?

The maximum junction-to-case (drain) thermal resistance (R_thJC) for SIHB11N80AE-GE3 is 1.6 °C/W, as stated in the Thermal Resistance Ratings table. This low value is enabled by the D2PAK package's exposed drain pad and allows efficient heat transfer to the PCB copper area or heatsink, supporting 78 W maximum power dissipation at T_C = 25 °C.

SIHB11N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 804 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB11N80AE-GE3 FAQ

1.How can I place an order for SIHB11N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB11N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB11N80AE-GE3 reliable?

The price and inventory of SIHB11N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB11N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB11N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB11N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB11N80AE-GE3?

SIHB11N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB11N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB11N80AE-GE3?

For technical support, including SIHB11N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB11N80AE-GE3 requirements.

6.How does Aetrix verify that SIHB11N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB11N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB11N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB11N80AE-GE3?

All SIHB11N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB11N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB11N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHB11N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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