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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB11N80E-GE3

Name: SIHB11N80E-GE3
Brand: Vishay Siliconix
SKU: SIHB11N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB11N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB11N80E-GE3.pdf

Description:: MOSFET N-CH 800V 12A D2PAK

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Product details

Overview

SIHB11N80E-GE3 from Vishay Siliconix is an 800 V, 12 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 0.38 Ω R_DS(on) at V_GS = 10 V, 88 nC total gate charge, and 226 mJ single-pulse avalanche energy - designed for high-voltage switching in telecom power supplies and solar PV inverters.

For engineers reviewing the SIHB11N80E-GE3 datasheet, SIHB11N80E-GE3 pinout, SIHB11N80E-GE3 application, or SIHB11N80E-GE3 equivalent, key selection criteria include its 800 V V_DS rating, low Q_g/R_DS(on) figure-of-merit, avalanche ruggedness, and D2PAK thermal performance for high-efficiency SMPS and PFC stages.

Technical Context

This device employs a planar high-voltage trench-gated structure optimized for reduced conduction and switching losses in hard-switched topologies. Its 0.7 °C/W junction-to-case thermal resistance enables high-power operation with minimal heatsinking in industrial DC-DC converters and motor drive half-bridges.

The MOSFET integrates a fast-recovery body diode (t_rr = 345 ns typ., Q_rr = 4.2 μC) and supports dV/dt immunity up to 70 V/ns at T_J = 125 °C - critical for reliable operation in noisy high-frequency PFC and inverter circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports primary-side switching in 400 V DC bus systems with 100 % margin against transients
R_DS(on) typ.	0.38 Ω at V_GS = 10 V - enables <1.2 W conduction loss at 5.5 A continuous drain current
Q_g max	88 nC - determines gate driver power requirement and switching speed in 100–300 kHz SMPS designs
E_AS	226 mJ - ensures robustness against unclamped inductive switching events in motor drives and welders
C_iss typ.	1670 pF - impacts Miller effect and gate drive stability in high-dV/dt applications
R_thJC	0.7 °C/W - allows 179 W power dissipation with ≤125 °C case temperature rise under forced-air cooling
t_rr typ.	345 ns - minimizes reverse recovery losses and EMI generation during diode commutation

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for enhanced thermal conduction and mechanical robustness in high-power PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V logic-level drive; 0.4–1.8 Ω gate input resistance affects RC time constant and noise immunity
D (Drain)	High-voltage power output	Connected to exposed copper pad on bottom of package; carries full load current and dissipates heat directly to PCB
S (Source)	Reference node / return path	Provides common reference for gate drive and current sensing; ties to power ground in half-bridge configurations

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	33.4 Ω·nC - improves efficiency trade-off between conduction and switching losses in 100–200 kHz PFC stages
Avalanche-rated (UIS)	226 mJ single-pulse - eliminates need for external snubbers in inductive load switching
Fast body diode recovery	t_rr = 345 ns, Q_rr = 4.2 μC - reduces cross-conduction loss and voltage overshoot in synchronous rectification
High dV/dt immunity	70 V/ns at T_J = 125 °C - prevents false turn-on in high-noise bridge-leg environments
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization standard 99912

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 48 V–12 V intermediate bus converters and 380 V DC-link inverters. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in active clamp forward or LLC resonant topology. Use Value: 800 V rating and 226 mJ avalanche capability ensure reliability during line surges and startup transients.	Use Scenario: DC-AC inversion stage in string inverters handling up to 1000 V DC input. IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter legs. Use Value: 0.38 Ω R_DS(on) and 1670 pF C_iss enable high efficiency (>98.5 %) at 16 kHz switching frequency.
Industrial Motor Drive	Telecom Rectifier
Use Scenario: Brake chopper and auxiliary supply switching in 400 V AC-fed variable frequency drives. IC Role / Device Role / Timing Role: Energy-dissipating switch activated during regenerative braking. Use Value: 179 W power dissipation and 0.7 °C/W R_thJC allow compact heatsink design without derating at 70 °C ambient.	Use Scenario: Active OR-ing and hold-up capacitor charging in -48 V telecom rectifier modules. IC Role / Device Role / Timing Role: Hot-swap and redundancy control MOSFET in front-end power distribution. Use Value: 32 A pulsed drain current and 1.2 V V_SD support high-current inrush management with low forward drop.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 48 V–12 V intermediate bus converters and 380 V DC-link inverters.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET in active clamp forward or LLC resonant topology.

Use Value: 800 V rating and 226 mJ avalanche capability ensure reliability during line surges and startup transients.

Use Scenario: DC-AC inversion stage in string inverters handling up to 1000 V DC input.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter legs.

Use Value: 0.38 Ω R_DS(on) and 1670 pF C_iss enable high efficiency (>98.5 %) at 16 kHz switching frequency.

Industrial Motor Drive

Telecom Rectifier

Use Scenario: Brake chopper and auxiliary supply switching in 400 V AC-fed variable frequency drives.

IC Role / Device Role / Timing Role: Energy-dissipating switch activated during regenerative braking.

Use Value: 179 W power dissipation and 0.7 °C/W R_thJC allow compact heatsink design without derating at 70 °C ambient.

Use Scenario: Active OR-ing and hold-up capacitor charging in -48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Hot-swap and redundancy control MOSFET in front-end power distribution.

Use Value: 32 A pulsed drain current and 1.2 V V_SD support high-current inrush management with low forward drop.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V V_DS, 48 A I_D, 0.065 Ω R_DS(on), TO-247 package	Limited to ≤600 V DC bus; higher current but lower voltage rating than SIHB11N80E-GE3	Prefer for 400 V systems requiring higher current density; not suitable for 800 V PFC or PV string inputs
IXFH30N80X	800 V V_DS, 30 A I_D, 0.24 Ω R_DS(on), TO-247 package, no avalanche rating	Higher current and lower R_DS(on), but lacks UIS qualification and has larger footprint	Choose when peak current exceeds 12 A and avalanche stress is managed externally; requires layout redesign

Compared with STW48N60M2 and IXFH30N80X, SIHB11N80E-GE3 offers optimal balance of 800 V rating, proven avalanche ruggedness, and D2PAK thermal efficiency for space-constrained 1–3 kW industrial and renewable energy converters.

Availability

SIHB11N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHB11N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHB11N80E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-voltage switching in telecom, industrial, and renewable energy systems where ruggedness and thermal performance are critical.

FAQ

What is the maximum continuous drain current for SIHB11N80E-GE3 at 100 °C case temperature?

The SIHB11N80E-GE3 supports 8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation without exceeding 150 °C junction temperature under typical PCB copper area conditions.

Does SIHB11N80E-GE3 have avalanche energy rating, and what is its value?

Yes, SIHB11N80E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 226 mJ, measured per test condition V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.0 A - confirming ruggedness for inductive load switching without external protection.

What is the gate-source threshold voltage range for SIHB11N80E-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHB11N80E-GE3 is specified from 2 V to 4 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity in high-dV/dt environments.

Can SIHB11N80E-GE3 be used in synchronous rectification applications?

SIHB11N80E-GE3 can be used in synchronous rectification, but its body diode characteristics (t_rr = 345 ns typ., Q_rr = 4.2 μC) are optimized for hard-switching rather than ultra-fast freewheeling. For dedicated SR, consider devices with lower Q_rr and tighter t_rr distribution - though SIHB11N80E-GE3 remains viable in moderate-frequency flyback or LLC secondary-side designs.

What is the thermal resistance from junction to case for SIHB11N80E-GE3?

The maximum junction-to-case (drain) thermal resistance (R_thJC) for SIHB11N80E-GE3 is 0.7 °C/W, enabling efficient heat transfer from the die to the PCB copper pour. This value is critical for calculating allowable power dissipation and heatsink requirements in high-power SMPS and motor drive applications using the SIHB11N80E-GE3.

SIHB11N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 440mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1670 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB11N80E-GE3 FAQ

1.How can I place an order for SIHB11N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB11N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB11N80E-GE3 reliable?

The price and inventory of SIHB11N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB11N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB11N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB11N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB11N80E-GE3?

SIHB11N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB11N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB11N80E-GE3?

For technical support, including SIHB11N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB11N80E-GE3 requirements.

6.How does Aetrix verify that SIHB11N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB11N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB11N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB11N80E-GE3?

All SIHB11N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB11N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB11N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHB11N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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