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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB120N60E-GE3

Name: SIHB120N60E-GE3
Brand: Vishay Siliconix
SKU: SIHB120N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB120N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB120N60E-GE3.pdf

Description:: MOSFET N-CH 600V 25A D2PAK

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Product details

Overview

SIHB120N60E-GE3 from Vishay Siliconix is a 600 V, 25 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 0.104 Ω R_DS(on) at V_GS = 10 V, 45 nC total gate charge, and 88 mJ single-pulse avalanche energy - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server power systems.

For engineers reviewing the SIHB120N60E-GE3 datasheet, SIHB120N60E-GE3 pinout, SIHB120N60E-GE3 application, or SIHB120N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced Co(er) of 56 pF, 70 V/ns dv/dt rating, and robust UIS capability - all critical for hard-switched 480 V DC bus designs.

Technical Context

This E-series MOSFET employs 4th-generation superjunction technology to minimize conduction and switching losses simultaneously. Its low effective output capacitance (Co(er) = 56 pF) and fast reverse recovery (Q_rr = 4.9 μC typical) reduce turn-off loss and diode commutation stress in continuous conduction mode (CCM) PFC and LLC resonant converters.

The device supports high-voltage operation up to 600 V with ±30 V gate rating and exhibits stable R_DS(on) temperature coefficient (+0.67 V/°C), enabling predictable thermal performance across -55 °C to +150 °C junction range. Its 0.7 °C/W R_thJC enables high-power density mounting on thermally optimized PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 480 V AC rectified DC bus with 20 % margin for voltage transients in telecom/server PSUs
R_DS(on) max	0.120 Ω at 12 A, 25 °C - defines conduction loss (P_cond ≈ 17.3 W at 12 A) and thermal rise in continuous operation
Q_g max	45 nC - determines gate drive power requirement and switching speed when driven by standard 1–2 A peak gate drivers
E_AS	88 mJ - enables reliable unclamped inductive switching without external snubbers in PFC boost chokes
C_oss(er)	56 pF - reduces capacitive turn-on loss and improves efficiency in high-frequency (>100 kHz) hard-switched topologies
I_D @ T_C = 100 °C	16 A - specifies usable current derating for surface-mount thermal management in enclosed power modules
V_SD	1.2 V at 12 A - body diode forward drop impacts light-load efficiency and ZVS behavior in bridge-leg configurations

Pinout & Package

D2PAK (TO-263) package with exposed drain pad for low thermal resistance (R_thJC = 0.7 °C/W); 3-pin configuration with G–D–S layout optimized for high-current PCB trace routing and thermal vias under the drain tab.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires <1.3 Ω gate resistance to limit ringing and ensure 38 ns max td(off) per datasheet test conditions
D (Drain)	High-side power terminal	Connected to HV DC bus (up to 600 V); electrically and thermally tied to large copper area via exposed backside metal pad
S (Source)	Power return and reference node	Serves as local ground for gate driver; must be routed with minimal inductance to avoid shoot-through during switching transitions

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	4.68 Ω·nC - directly reduces combined conduction + switching loss in 65–100 kHz SMPS designs
Avalanche-rated (UIS)	88 mJ single-pulse - eliminates need for external clamping circuits in boost PFC and flyback primary switches
Reduced C_oss(er)	56 pF - cuts stored output capacitance energy (E_oss) by >30 % vs. prior-gen 600 V MOSFETs, improving light-load efficiency
Fast body diode recovery	Q_rr = 4.9 μC typical - lowers diode reverse recovery loss and EMI generation in discontinuous conduction mode (DCM) operation
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc# 99912

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW 48 V output telecom rectifier operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage synchronous switch handling 400–550 V DC input, conducting for ~500 ns per cycle with 100 ns dead time. Use Value: Low Q_gd/Q_g ratio (12/45 nC) ensures clean Miller plateau transition and minimizes cross-conduction risk in tightly timed gate drive schemes.	Use Scenario: Boost switch in 1.5 kW front-end PFC stage for 48 V server PSU, operating in continuous conduction mode at 65 kHz. IC Role / Device Role / Timing Role: Unidirectional high-side switch with body diode conducting during zero-voltage switching intervals. Use Value: 1.2 V V_SD and 322 ns t_rr reduce reverse recovery loss by ~25 % compared to standard 600 V MOSFETs, improving full-load efficiency by 0.4 %.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string-level 3 kW PV inverter using two-level NPC topology with 600 V DC input. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in upper-leg position, subjected to repetitive 600 V blocking and 25 A peak current. Use Value: 600 V V_DS rating with 20 % design margin and 88 mJ E_AS withstands lightning surge-induced overvoltage without failure.	Use Scenario: Inverter leg switch in 7.5 kW industrial VFD driving 3-phase induction motor at 4 kHz PWM frequency. IC Role / Device Role / Timing Role: Medium-voltage switching element in 3-phase bridge, switching at 4–8 kHz with 12 A RMS current. Use Value: 0.104 Ω R_DS(on) limits conduction loss to <15 W at 12 A, enabling compact heatsink design while maintaining TJ < 130 °C.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW 48 V output telecom rectifier operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage synchronous switch handling 400–550 V DC input, conducting for ~500 ns per cycle with 100 ns dead time.

Use Value: Low Q_gd/Q_g ratio (12/45 nC) ensures clean Miller plateau transition and minimizes cross-conduction risk in tightly timed gate drive schemes.

Use Scenario: Boost switch in 1.5 kW front-end PFC stage for 48 V server PSU, operating in continuous conduction mode at 65 kHz.

IC Role / Device Role / Timing Role: Unidirectional high-side switch with body diode conducting during zero-voltage switching intervals.

Use Value: 1.2 V V_SD and 322 ns t_rr reduce reverse recovery loss by ~25 % compared to standard 600 V MOSFETs, improving full-load efficiency by 0.4 %.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string-level 3 kW PV inverter using two-level NPC topology with 600 V DC input.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in upper-leg position, subjected to repetitive 600 V blocking and 25 A peak current.

Use Value: 600 V V_DS rating with 20 % design margin and 88 mJ E_AS withstands lightning surge-induced overvoltage without failure.

Use Scenario: Inverter leg switch in 7.5 kW industrial VFD driving 3-phase induction motor at 4 kHz PWM frequency.

IC Role / Device Role / Timing Role: Medium-voltage switching element in 3-phase bridge, switching at 4–8 kHz with 12 A RMS current.

Use Value: 0.104 Ω R_DS(on) limits conduction loss to <15 W at 12 A, enabling compact heatsink design while maintaining TJ < 130 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.115 Ω, Q_g = 52 nC, Co(er) = 75 pF, TO-247 package	Higher switching loss due to larger Q_g and Co(er); requires larger gate driver and heatsink	Preferred where higher avalanche ruggedness (120 mJ) is prioritized over efficiency in infrequent surge events
IXFH60N60P	R_DS(on) = 0.125 Ω, Q_g = 38 nC, Co(er) = 48 pF, TO-247 package	Lower Co(er) but higher R_DS(on); slightly faster trr (290 ns) but lower ID rating (20 A)	Better for high-frequency resonant converters where capacitive loss dominates, but not suitable for 25 A continuous conduction

Compared with STW62N60M2 and IXFH60N60P, SIHB120N60E-GE3 delivers the best balance of low conduction loss (0.104 Ω), moderate gate charge (45 nC), and industry-leading Co(er) (56 pF), making it optimal for space-constrained, efficiency-critical 600 V SMPS designs requiring 20–25 A continuous current.

Availability

SIHB120N60E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHB120N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switch-mode power conversion - engineered specifically for telecom rectifiers, server PSUs, PFC stages, and industrial inverters where low FOM and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for SIHB120N60E-GE3 at 100 °C case temperature?

The SIHB120N60E-GE3 supports 16 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value accounts for thermal resistance and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to maintain T_C ≤ 100 °C under full load. The SIHB120N60E-GE3 datasheet confirms this rating applies with proper heatsinking and no ambient derating.

Does SIHB120N60E-GE3 have avalanche energy rating, and how is it tested?

Yes, SIHB120N60E-GE3 is rated for 88 mJ single-pulse unclamped inductive switching (UIS) energy, tested per JEDEC standard JESD24-11 with L = 28.2 mH, R_g = 25 Ω, I_AS = 2.5 A, and starting T_J = 25 °C. This rating validates robustness against inductive kickback in PFC and flyback applications. The SIHB120N60E-GE3 specification sheet explicitly lists E_AS = 88 mJ under Absolute Maximum Ratings.

What is the gate threshold voltage range for SIHB120N60E-GE3, and does it support 5 V logic drive?

The SIHB120N60E-GE3 has a gate threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V at I_D = 250 μA, confirming compatibility with standard 5 V logic-level gate drivers. However, full enhancement (R_DS(on) = 0.104 Ω typ.) requires V_GS = 10 V. The SIHB120N60E-GE3 is not a logic-level MOSFET - it is optimized for 10 V drive to achieve its rated low on-resistance and switching performance.

How does the body diode performance of SIHB120N60E-GE3 compare to standard 600 V MOSFETs?

The SIHB120N60E-GE3 features improved body diode characteristics: V_SD = 1.2 V at 12 A and t_rr = 322 ns typical, with Q_rr = 4.9 μC. These values represent ~15 % lower forward drop and ~20 % faster recovery than legacy 600 V MOSFETs, reducing diode conduction loss and EMI in hard-switched topologies. The SIHB120N60E-GE3 datasheet provides these parameters in the Drain-Source Body Diode Characteristics section.

Is SIHB120N60E-GE3 lead (Pb)-free and RoHS-compliant?

Yes, SIHB120N60E-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU requirements. The "-GE3" suffix denotes Vishay's green, lead-free, and halogen-free packaging standard. Material compliance is documented in Vishay's material categorization guide (doc# 99912), referenced in the SIHB120N60E-GE3 datasheet.

SIHB120N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 120mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1562 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB120N60E-GE3 FAQ

1.How can I place an order for SIHB120N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB120N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB120N60E-GE3 reliable?

The price and inventory of SIHB120N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB120N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB120N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB120N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB120N60E-GE3?

SIHB120N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB120N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB120N60E-GE3?

For technical support, including SIHB120N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB120N60E-GE3 requirements.

6.How does Aetrix verify that SIHB120N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB120N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB120N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB120N60E-GE3?

All SIHB120N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB120N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB120N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHB120N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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