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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB120N60E-T1-GE3

Name: SIHB120N60E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHB120N60E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB120N60E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB120N60E-T1-GE3.pdf

Description:: N-CHANNEL 600V

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Product details

Overview

SIHB120N60E-T1-GE3 from Vishay Siliconix is a 600 V, 25 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 0.104 Ω R_DS(on) at V_GS = 10 V, 45 nC total gate charge, and 88 mJ single-pulse avalanche energy - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server power systems.

For engineers reviewing the SIHB120N60E-T1-GE3 datasheet, SIHB120N60E-T1-GE3 pinout, SIHB120N60E-T1-GE3 application, or SIHB120N60E-T1-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced Co(er) of 56 pF, 70 V/ns dv/dt rating, and robust UIS capability - all critical for hard-switched, high-voltage industrial and renewable energy inverters.

Technical Context

This E-series MOSFET employs 4th-generation superjunction technology to minimize conduction and switching losses simultaneously. Its low effective output capacitance (Co(er) = 56 pF) and fast reverse recovery (Q_rr = 4.9–18.4 μC, t_rr = 322–870 ns) support high-frequency operation up to 100 kHz in continuous conduction mode PFC and resonant LLC topologies.

The device integrates an optimized body diode with 1.2 V forward voltage at 12 A and 25 A continuous source-drain current rating. Thermal resistance R_thJC = 0.7 °C/W enables high-power density designs when mounted on copper-clad PCBs with thermal vias or heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified to ~565 V DC bus with 5% margin for surge and ripple
R_DS(on) typ	0.104 Ω at V_GS = 10 V - delivers ≤ 15.2 W conduction loss at 12 A, enabling >98% efficiency in 3.3 kW PFC stages
Q_g max	45 nC - determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers (e.g., UCC27531)
E_AS	88 mJ - ensures reliable unclamped inductive switching in flyback or forward converters without external snubbers
C_o(er)	56 pF - reduces turn-off energy loss and improves hard-switching efficiency vs. legacy 600 V MOSFETs
t_r/t_f	65/33 ns typical - enables clean 100+ kHz switching with minimal overlap loss in half-bridge configurations
T_J range	−55 °C to +150 °C - qualified for industrial and outdoor solar inverter ambient conditions

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for enhanced thermal performance; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; requires <1.3 Ω series gate resistor to damp ringing and limit dV/dt-induced turn-on
D (Drain)	High-side power node	Connected to HV DC bus; drain tab must be soldered to ≥ 4 cm² 2-oz copper pour for R_thJC = 0.7 °C/W
S (Source)	Reference node / return path	Common return for gate drive and load current; layout must minimize inductance to avoid shoot-through during switching

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	4.69 Ω·nC - directly reduces combined conduction + switching loss, enabling smaller heatsinks in 1U server PSUs
Avalanche-rated (UIS)	88 mJ single-pulse - eliminates need for external clamping circuits in inductive load switching applications
Optimized body diode	Q_rr = 4.9 μC typ - cuts diode recovery loss by >30% vs. standard 600 V MOSFETs, improving light-load efficiency
High dv/dt immunity	70 V/ns at T_J = 125 °C - prevents false turn-on in high-noise motor drive and welding inverter environments
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc# 99912

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3.3 kW active clamp forward or phase-shifted full-bridge converter. IC Role / Device Role / Timing Role: High-voltage synchronous rectifier switch handling 400–600 V DC bus with 12–25 A RMS current. Use Value: 0.104 Ω R_DS(on) and 45 nC Q_g enable >96% full-load efficiency while maintaining <85 °C case temperature under forced air cooling.	Use Scenario: Boost PFC stage in 48 V telecom rectifier operating at 65 kHz with 230 V AC input. IC Role / Device Role / Timing Role: Fast-switching boost switch managing 10–15 A peak current and 565 V DC link voltage. Use Value: Low Co(er) (56 pF) and fast t_r/t_f reduce switching loss by 22% versus prior-gen 600 V MOSFETs, improving power density by 18%.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverter H-bridge stage converting 600–1000 V DC to 230 V AC. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 10–20 kW inverters requiring high dv/dt immunity and low conduction loss. Use Value: 70 V/ns dv/dt rating and 88 mJ E_AS ensure reliable operation during grid fault transients without desaturation protection.	Use Scenario: Inverter leg switch in 7.5 kW induction motor drive with 400 V DC bus and 3-phase sinusoidal PWM. IC Role / Device Role / Timing Role: Main power switch handling 25 A continuous current and repetitive 66 A pulsed loads during acceleration. Use Value: 150 °C T_J rating and 0.7 °C/W R_thJC allow sustained 100% torque output without derating in enclosed cabinet environments.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3.3 kW active clamp forward or phase-shifted full-bridge converter.

IC Role / Device Role / Timing Role: High-voltage synchronous rectifier switch handling 400–600 V DC bus with 12–25 A RMS current.

Use Value: 0.104 Ω R_DS(on) and 45 nC Q_g enable >96% full-load efficiency while maintaining <85 °C case temperature under forced air cooling.

Use Scenario: Boost PFC stage in 48 V telecom rectifier operating at 65 kHz with 230 V AC input.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 10–15 A peak current and 565 V DC link voltage.

Use Value: Low Co(er) (56 pF) and fast t_r/t_f reduce switching loss by 22% versus prior-gen 600 V MOSFETs, improving power density by 18%.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverter H-bridge stage converting 600–1000 V DC to 230 V AC.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 10–20 kW inverters requiring high dv/dt immunity and low conduction loss.

Use Value: 70 V/ns dv/dt rating and 88 mJ E_AS ensure reliable operation during grid fault transients without desaturation protection.

Use Scenario: Inverter leg switch in 7.5 kW induction motor drive with 400 V DC bus and 3-phase sinusoidal PWM.

IC Role / Device Role / Timing Role: Main power switch handling 25 A continuous current and repetitive 66 A pulsed loads during acceleration.

Use Value: 150 °C T_J rating and 0.7 °C/W R_thJC allow sustained 100% torque output without derating in enclosed cabinet environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.115 Ω, Q_g = 52 nC, C_o(er) = 72 pF - higher switching loss and lower dv/dt immunity (50 V/ns)	Better suited for lower-frequency (<50 kHz) SMPS where conduction loss dominates	Prefer SIHB120N60E-T1-GE3 for >65 kHz PFC or high-dv/dt motor drives
IXFH32N60P	R_DS(on) = 0.135 Ω, Q_g = 65 nC, no specified E_AS - higher conduction loss and untested avalanche capability	Used in legacy industrial UPS where ruggedness is less critical than cost	Choose SIHB120N60E-T1-GE3 when UIS reliability and low FOM are mandatory for new designs

Compared with STW62N60M2 and IXFH32N60P, SIHB120N60E-T1-GE3 delivers superior high-frequency efficiency via lower R_DS(on) × Q_g, verified avalanche robustness, and higher dv/dt immunity - making it the preferred choice for next-generation server PSUs, telecom rectifiers, and solar inverters demanding both power density and field reliability.

Availability

SIHB120N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for SIHB120N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The E Series Power MOSFET product line targets high-efficiency, high-reliability switch-mode power conversion in server, telecom, industrial, and renewable energy systems - engineered for low FOM, high avalanche energy, and robust thermal performance.

FAQ

What is the maximum continuous drain current rating for SIHB120N60E-T1-GE3 at 100 °C case temperature?

The SIHB120N60E-T1-GE3 has a continuous drain current rating of 16 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 25 A rating at 25 °C, based on a linear derating factor of 1.4 W/°C and R_thJC = 0.7 °C/W. Designers must verify PCB copper area and airflow to sustain this current in actual SIHB120N60E-T1-GE3 implementations.

Does SIHB120N60E-T1-GE3 support logic-level gate drive?

No, SIHB120N60E-T1-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 3.0 V to 5.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. It requires a 10 V gate drive for full enhancement and optimal conduction loss. Using 5 V logic-level drive results in significantly higher R_DS(on) and unacceptable power dissipation - always use a dedicated 10–15 V gate driver for SIHB120N60E-T1-GE3.

What is the significance of the "-T1-GE3" suffix in SIHB120N60E-T1-GE3?

The "-T1" denotes tape-and-reel packaging per EIA-481 standard, optimized for automated SMT placement, while "-GE3" indicates lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2011/65/EU and Vishay's material categorization (doc# 99912). This suffix confirms SIHB120N60E-T1-GE3 meets environmental requirements for industrial and telecom equipment without compromising electrical or thermal performance.

How does the body diode performance of SIHB120N60E-T1-GE3 compare to standard 600 V MOSFETs?

The SIHB120N60E-T1-GE3 features an optimized body diode with V_SD = 1.2 V at 12 A and Q_rr = 4.9–18.4 μC, delivering faster recovery and lower reverse recovery loss than standard 600 V MOSFETs. Its t_rr of 322–870 ns and low I_RRM of 29 A reduce diode-induced voltage spikes and EMI - critical for high-frequency PFC and ZVS circuits where SIHB120N60E-T1-GE3 is commonly deployed.

Can SIHB120N60E-T1-GE3 be used in avalanche mode repeatedly?

SIHB120N60E-T1-GE3 is rated for single-pulse avalanche energy (E_AS) of 88 mJ, but it is not characterized for repetitive avalanche operation. The datasheet specifies only a single-pulse test condition (L = 28.2 mH, I_AS = 2.5 A). For designs requiring repeated inductive turn-off stress, additional clamping circuitry or alternative devices with documented repetitive UIS capability should be considered - SIHB120N60E-T1-GE3 is intended for controlled hard-switching, not unclamped repetitive avalanche.

SIHB120N60E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 120mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1562 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB120N60E-T1-GE3 FAQ

1.How can I place an order for SIHB120N60E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB120N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB120N60E-T1-GE3 reliable?

The price and inventory of SIHB120N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB120N60E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB120N60E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB120N60E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB120N60E-T1-GE3?

SIHB120N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB120N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB120N60E-T1-GE3?

For technical support, including SIHB120N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB120N60E-T1-GE3 requirements.

6.How does Aetrix verify that SIHB120N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB120N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB120N60E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB120N60E-T1-GE3?

All SIHB120N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB120N60E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB120N60E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHB120N60E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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