Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB120N60E-T5-GE3

Name: SIHB120N60E-T5-GE3
Brand: Vishay Siliconix
SKU: SIHB120N60E-T5-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHB120N60E-T5-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB120N60E-T5-GE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:795

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHB120N60E-T5-GE3 from Vishay Siliconix is a 600 V, 25 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 0.104 Ω R_DS(on) at V_GS = 10 V, 45 nC total gate charge, and 88 mJ single-pulse avalanche energy - designed for high-efficiency switch-mode power supplies in telecom and server applications.

For engineers reviewing the SIHB120N60E-T5-GE3 datasheet, SIHB120N60E-T5-GE3 pinout, SIHB120N60E-T5-GE3 application, or SIHB120N60E-T5-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced switching losses, UIS-rated ruggedness, and compatibility with high-voltage PFC and ZVS topologies.

Technical Context

This E-series MOSFET employs 4th-generation superjunction technology optimized for hard-switched and resonant converters. Its low C_oss(er) (56 pF) and C_iss (1562 pF) enable fast switching with minimized capacitive losses, while the 70 V/ns dv/dt rating supports stable operation under high di/dt conditions.

The device integrates a robust body diode with 322 ns typical reverse recovery time and 4.9 μC Q_rr, enabling reliable operation in bridge configurations without external anti-parallel diodes in many PFC and inverter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in telecom/server PSUs
R_DS(on) typ	0.104 Ω @ V_GS = 10 V - enables <1.3 W conduction loss at 12 A continuous drain current
Q_g max	45 nC - determines gate drive power requirement and switching speed in 100–500 kHz SMPS designs
E_AS	88 mJ - ensures single-pulse unclamped inductive switching survivability without snubbers in motor drives or welders
C_oss(er)	56 pF - reduces turn-off energy loss and improves ZVS initiation in LLC resonant converters
T_J range	−55 °C to +150 °C - supports operation in sealed industrial enclosures and high-ambient telecom rectifiers
R_thJC	0.7 °C/W - allows 179 W power dissipation with ≤ 105 °C case-to-ambient ΔT using standard heatsinking

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; requires 30 nC minimum Q_gs + Q_gd to fully enhance; sensitive to ESD (±30 V rating)
D (Drain)	High-side power output	Connected to exposed metal tab; carries full load current and must be soldered to ≥ 200 mm² 2-oz copper for thermal performance
S (Source)	Power return / reference node	Serves as local ground for gate driver; voltage drop here directly impacts V_GS accuracy in high-di/dt switching

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	4.7 nC·Ω - reduces combined conduction and switching losses better than prior-gen 600 V MOSFETs in 200–300 kHz PFC stages
Avalanche-rated (UIS)	88 mJ single-pulse - eliminates need for external clamping in flyback or forward converter primary switches
Low C_oss(er)	56 pF - cuts turn-off energy by ~30 % vs. comparable 600 V devices, improving efficiency in high-frequency LLC
Enhanced body diode	322 ns t_rr, 4.9 μC Q_rr - enables synchronous rectification replacement in half-bridge inverters without added diode stress
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc# 99912 - suitable for automotive-qualified supply chains

Applications

Server Primary Switch	Telecom Rectifier
Use Scenario: High-density 3 kW front-end AC/DC converter operating at 100–300 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switching transistor handling 400 V DC bus and 20 A peak primary current; switched by isolated gate driver with 9.1 Ω series resistance. Use Value: Low Q_g and R_DS(on) reduce total losses to <2.1 W at full load, enabling >95 % efficiency without forced air cooling.	Use Scenario: -48 V telecom rectifier module with dual-phase interleaved PFC followed by phase-shifted full-bridge DC/DC stage. IC Role / Device Role / Timing Role: PFC boost switch operating at 120 kHz with 12 A RMS current; driven by dedicated PFC controller with adaptive dead-time control. Use Value: 0.104 Ω R_DS(on) limits conduction loss to 1.5 W, while low C_oss(er) minimizes switching loss contribution below 0.8 W.
Solar PV Inverter	Industrial Welder
Use Scenario: 5 kW string inverter with three-level NPC topology converting 600–1000 V DC input to 230 V AC grid output. IC Role / Device Role / Timing Role: High-side switch in NPC leg; subjected to repetitive 600 V blocking and 15 A switching current at 16 kHz PWM frequency. Use Value: 600 V V_DS rating with 150 °C T_J capability ensures safe operation during grid faults; avalanche rating handles inductive kickback during fault clearing.	Use Scenario: IGBT gate-drive auxiliary supply in 200 A inverter-based arc welder with rapid current slew rates (>500 A/ms). IC Role / Device Role / Timing Role: High-side switch in isolated flyback controller powering gate drivers; operates at 250 kHz with 100 % duty cycle capability during arc initiation. Use Value: Robust body diode with low V_SD (1.2 V) and controlled Q_rr prevents latch-up and thermal runaway during repeated short-circuit events.

Server Primary Switch

Telecom Rectifier

Use Scenario: High-density 3 kW front-end AC/DC converter operating at 100–300 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switching transistor handling 400 V DC bus and 20 A peak primary current; switched by isolated gate driver with 9.1 Ω series resistance.

Use Value: Low Q_g and R_DS(on) reduce total losses to <2.1 W at full load, enabling >95 % efficiency without forced air cooling.

Use Scenario: -48 V telecom rectifier module with dual-phase interleaved PFC followed by phase-shifted full-bridge DC/DC stage.

IC Role / Device Role / Timing Role: PFC boost switch operating at 120 kHz with 12 A RMS current; driven by dedicated PFC controller with adaptive dead-time control.

Use Value: 0.104 Ω R_DS(on) limits conduction loss to 1.5 W, while low C_oss(er) minimizes switching loss contribution below 0.8 W.

Solar PV Inverter

Industrial Welder

Use Scenario: 5 kW string inverter with three-level NPC topology converting 600–1000 V DC input to 230 V AC grid output.

IC Role / Device Role / Timing Role: High-side switch in NPC leg; subjected to repetitive 600 V blocking and 15 A switching current at 16 kHz PWM frequency.

Use Value: 600 V V_DS rating with 150 °C T_J capability ensures safe operation during grid faults; avalanche rating handles inductive kickback during fault clearing.

Use Scenario: IGBT gate-drive auxiliary supply in 200 A inverter-based arc welder with rapid current slew rates (>500 A/ms).

IC Role / Device Role / Timing Role: High-side switch in isolated flyback controller powering gate drivers; operates at 250 kHz with 100 % duty cycle capability during arc initiation.

Use Value: Robust body diode with low V_SD (1.2 V) and controlled Q_rr prevents latch-up and thermal runaway during repeated short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 62 A, R_DS(on) = 0.085 Ω, Q_g = 65 nC, TO-247 package	Higher current rating but larger footprint and higher gate drive demand; lacks specified E_AS rating	Preferred where higher continuous current and lower R_DS(on) outweigh layout space and drive complexity constraints
IXFH50N60P	600 V, 50 A, R_DS(on) = 0.125 Ω, Q_g = 120 nC, TO-247 package	Higher Q_g increases gate loss and slows switching; rated for 100 % UIS but with higher R_DS(on)	Selected when ruggedness under extreme avalanche stress is prioritized over efficiency in compact designs

Compared with STW62N60M2 and IXFH50N60P, SIHB120N60E-T5-GE3 delivers optimal balance of low-loss switching, surface-mount integration, and verified avalanche capability - making it preferred for space-constrained, high-frequency telecom and server power stages where thermal management and layout density are critical.

Availability

SIHB120N60E-T5-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial welding equipment requiring stable component supply across multi-year production cycles.

Supply support for SIHB120N60E-T5-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and computing applications.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching in server, telecom, and renewable energy systems - emphasizing low FOM, avalanche ruggedness, and surface-mount thermal performance.

FAQ

What is the maximum continuous drain current rating for SIHB120N60E-T5-GE3 at 100 °C case temperature?

The SIHB120N60E-T5-GE3 has a continuous drain current rating of 16 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package; at T_C = 25 °C, the rating increases to 25 A. Designers must ensure heatsinking maintains case temperature within this limit to avoid exceeding junction temperature limits.

Does SIHB120N60E-T5-GE3 support logic-level gate drive?

No, SIHB120N60E-T5-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 3.0 V to 5.0 V, and it is characterized for full enhancement at V_GS = 10 V. Driving it with only 5 V risks incomplete turn-on and excessive R_DS(on); a 10–15 V gate drive with adequate current sourcing (>1 A peak) is required for optimal performance in the SIHB120N60E-T5-GE3.

What is the significance of the "-T5-GE3" suffix in SIHB120N60E-T5-GE3?

The "-T5" denotes tape-and-reel packaging with 800 units per reel, while "-GE3" indicates lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc# 99912). This suffix confirms the SIHB120N60E-T5-GE3 meets environmental requirements for industrial and telecom end-equipment without compromising electrical specifications.

How does the body diode performance of SIHB120N60E-T5-GE3 compare to standard 600 V MOSFETs?

The SIHB120N60E-T5-GE3 features an optimized body diode with t_rr = 322 ns (typical) and Q_rr = 4.9 μC at T_J = 25 °C - significantly faster and lower-charge than legacy 600 V MOSFETs. This reduces diode-induced switching loss and EMI in bridge topologies, and enables reliable operation in hard-commutated circuits where the SIHB120N60E-T5-GE3 body diode replaces discrete ultrafast diodes.

Can SIHB120N60E-T5-GE3 be used in zero-voltage switching (ZVS) circuits?

Yes, the SIHB120N60E-T5-GE3 is well-suited for ZVS applications due to its low C_oss(er) (56 pF) and C_iss (1562 pF), which facilitate resonant turn-on with minimal voltage overshoot. Its 70 V/ns dv/dt rating and controlled body diode recovery support stable ZVS operation in LLC and phase-shifted full-bridge converters - confirmed by Vishay's typical characteristics curves for C_oss vs. V_DS in the SIHB120N60E-T5-GE3 datasheet.

SIHB120N60E-T5-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 120mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1562 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB120N60E-T5-GE3 FAQ

1.How can I place an order for SIHB120N60E-T5-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB120N60E-T5-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB120N60E-T5-GE3 reliable?

The price and inventory of SIHB120N60E-T5-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB120N60E-T5-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB120N60E-T5-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB120N60E-T5-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB120N60E-T5-GE3?

SIHB120N60E-T5-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB120N60E-T5-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB120N60E-T5-GE3?

For technical support, including SIHB120N60E-T5-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB120N60E-T5-GE3 requirements.

6.How does Aetrix verify that SIHB120N60E-T5-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB120N60E-T5-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB120N60E-T5-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB120N60E-T5-GE3?

All SIHB120N60E-T5-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB120N60E-T5-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB120N60E-T5-GE3 part is unused and in its original packaging.

Return procedure for SIHB120N60E-T5-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …