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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB125N60EF-GE3

Name: SIHB125N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHB125N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB125N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB125N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 25A D2PAK

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Product details

Overview

SIHB125N60EF-GE3 from Vishay Siliconix is a 600 V, 25 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.109 Ω at V_GS = 10 V, Q_g = 31 nC (typ), and fast body diode with t_rr = 117 ns - optimized for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHB125N60EF-GE3 datasheet, SIHB125N60EF-GE3 pinout, SIHB125N60EF-GE3 application, or SIHB125N60EF-GE3 equivalent, key selection criteria include avalanche-rated UIS capability (88 mJ), low Co(er) = 54 pF for reduced switching loss, and validated fast-recovery body diode performance under di/dt = 100 A/μs conditions.

Technical Context

This EF-series MOSFET employs Vishay's 4th-generation E-series silicon technology, delivering low figure-of-merit (R_DS(on) × Q_g = 3.39 Ω·nC) and reduced effective output capacitance (Co(er) = 54 pF) to minimize both conduction and hard-switching losses. Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) ensures robust noise immunity in high-noise power-conversion environments.

The device integrates an avalanche-energy-rated body diode (E_AS = 88 mJ) and supports dv/dt ruggedness up to 70 V/ns at T_J = 125 °C. Thermal resistance R_thJC = 0.7 °C/W enables high-power operation with minimal heatsink requirements in compact industrial and solar inverter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % safety margin for transient overvoltage in PFC and inverter stages.
R_DS(on) typ @ 10 V	0.109 Ω - enables ≤1.6 W conduction loss at 12 A continuous drain current, critical for thermal management in sealed enclosures.
Q_g max	47 nC - determines gate drive power requirement; low value reduces driver IC stress and improves efficiency in 100–300 kHz SMPS.
t_rr typ	117 ns - fast body diode recovery minimizes commutation loss and ringing in synchronous rectification and bidirectional topologies.
E_AS	88 mJ - rated single-pulse avalanche energy allows safe operation during inductive turn-off faults without external snubbers.
R_thJC	0.7 °C/W - enables >150 W dissipation with modest heatsinking, supporting high-density 1U server PSU designs.
I_D cont @ T_C = 100 °C	16 A - defines real-world current capability under typical PCB-mounted thermal conditions, not just ideal heatsink specs.

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated thermal pad (drain-connected), 3-pin configuration, and JEDEC-compliant outline per document 91364. Package dimensions: 10.67 mm × 9.65 mm × 4.83 mm (max), with 2.54 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires 10 V drive for full enhancement; input capacitance C_iss = 1533 pF affects gate driver sizing.
D	Drain	Main high-side power terminal; electrically connected to thermal pad; must be routed with low-inductance layout for dv/dt stability.
S	Source	Power return and reference node for gate drive; ties to PCB ground plane; source inductance directly impacts switching speed and ringing.

Key Features

Feature	Design Value
Fast body diode	t_rr = 117 ns and Q_rr = 0.7 μC enable zero-voltage switching (ZVS) in LLC resonant converters without external diodes.
Low R_DS(on) × Q_g	3.39 Ω·nC - balances switching and conduction loss for optimal efficiency across 100–500 kHz operating range.
Avalanche-rated	E_AS = 88 mJ - eliminates need for external clamping circuits in flyback and forward converter primary switches.
High dv/dt ruggedness	70 V/ns at T_J = 125 °C - prevents false turn-on in high-speed half-bridge configurations with steep voltage transients.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc. 99912).

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switch in active clamp forward or asymmetric half-bridge PFC stage of 1–3 kW rack-mounted server PSUs. IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 400 V DC bus with 100–200 kHz switching frequency. Use Value: Low R_DS(on) and fast body diode reduce total losses by ≥8 % vs. legacy 650 V MOSFETs, enabling higher power density and lower fan noise.	Use Scenario: Main switch in 48 V input, 3 kW telecom rectifier front-end with interleaved PFC and phase-shifted full-bridge DC/DC. IC Role / Device Role / Timing Role: High-reliability power switch subjected to frequent line surges and partial-load cycling. Use Value: Avalanche rating and 70 V/ns dv/dt immunity ensure stable operation under grid instability and lightning-induced transients.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switch in string-level MPPT boost stage of residential solar inverters (600–1000 V DC input). IC Role / Device Role / Timing Role: Fast-switching, high-voltage MOSFET managing variable PV array voltage with tight thermal constraints. Use Value: Co(er) = 54 pF lowers switching energy loss during partial-load MPPT sweeps, improving weighted efficiency (EU, CEC standards).	Use Scenario: Inverter leg switch in 3–7.5 kW HVAC and pump drives using space-vector PWM at 8–16 kHz carrier frequency. IC Role / Device Role / Timing Role: Robust power switch handling repetitive short-circuit events and motor regeneration currents. Use Value: Body diode reverse recovery charge Q_rr = 0.7 μC limits shoot-through risk and reduces snubber losses in 3-phase bridge topology.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in active clamp forward or asymmetric half-bridge PFC stage of 1–3 kW rack-mounted server PSUs.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 400 V DC bus with 100–200 kHz switching frequency.

Use Value: Low R_DS(on) and fast body diode reduce total losses by ≥8 % vs. legacy 650 V MOSFETs, enabling higher power density and lower fan noise.

Use Scenario: Main switch in 48 V input, 3 kW telecom rectifier front-end with interleaved PFC and phase-shifted full-bridge DC/DC.

IC Role / Device Role / Timing Role: High-reliability power switch subjected to frequent line surges and partial-load cycling.

Use Value: Avalanche rating and 70 V/ns dv/dt immunity ensure stable operation under grid instability and lightning-induced transients.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switch in string-level MPPT boost stage of residential solar inverters (600–1000 V DC input).

IC Role / Device Role / Timing Role: Fast-switching, high-voltage MOSFET managing variable PV array voltage with tight thermal constraints.

Use Value: Co(er) = 54 pF lowers switching energy loss during partial-load MPPT sweeps, improving weighted efficiency (EU, CEC standards).

Use Scenario: Inverter leg switch in 3–7.5 kW HVAC and pump drives using space-vector PWM at 8–16 kHz carrier frequency.

IC Role / Device Role / Timing Role: Robust power switch handling repetitive short-circuit events and motor regeneration currents.

Use Value: Body diode reverse recovery charge Q_rr = 0.7 μC limits shoot-through risk and reduces snubber losses in 3-phase bridge topology.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.115 Ω, Q_g = 52 nC, t_rr = 160 ns, TO-247 package	Higher gate charge increases driver loss; slower diode limits ZVS range in resonant converters.	Preferred where higher surge current rating (I_DM = 120 A) outweighs efficiency trade-offs in industrial UPS.
IXFH32N60P	R_DS(on) = 0.135 Ω, Q_g = 58 nC, no avalanche rating, TO-247 package	Lacks UIS rating; requires external clamping; higher conduction loss reduces thermal headroom.	Suitable for cost-sensitive, non-safety-critical SMPS where board space permits larger heatsink and layout accommodates snubbers.

Compared with STW62N60M2 and IXFH32N60P, SIHB125N60EF-GE3 delivers superior switching efficiency due to lower Q_g and faster body diode, while its integrated avalanche rating and D2PAK footprint simplify thermal design and reduce BOM count in space-constrained telecom and server platforms.

Availability

SIHB125N60EF-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHB125N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and power efficiency.

The EF Series - including SIHB125N60EF-GE3 - was engineered for high-frequency, high-efficiency AC/DC and DC/DC conversion in demanding infrastructure applications such as data center power and renewable energy systems.

FAQ

What is the maximum continuous drain current for SIHB125N60EF-GE3 at 100 °C case temperature?

The SIHB125N60EF-GE3 supports 16 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects real-world thermal performance on a standard 2 oz copper PCB with 1 in² thermal pad area, and must be derated linearly above 100 °C using the 1.4 W/°C derating factor. The SIHB125N60EF-GE3 datasheet confirms this rating applies under V_GS = 10 V and ambient airflow conditions typical of enclosed power supplies.

Does SIHB125N60EF-GE3 have avalanche capability, and how is it rated?

Yes, SIHB125N60EF-GE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 88 mJ at T_J = 25 °C, tested per condition: V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 2.5 A. This avalanche rating is built into the silicon process and validated per JEDEC JESD24-11, allowing the SIHB125N60EF-GE3 to safely absorb inductive energy without external protection in PFC and flyback topologies.

What is the body diode forward voltage of SIHB125N60EF-GE3, and under what conditions is it measured?

The body diode forward voltage (V_SD) of SIHB125N60EF-GE3 is 1.2 V maximum at T_J = 25 °C, I_S = 12 A, and V_GS = 0 V. This parameter is critical for evaluating conduction loss during freewheeling intervals in half-bridge and synchronous rectifier configurations. The SIHB125N60EF-GE3 datasheet specifies that V_SD increases to ~1.5 V at T_J = 150 °C, confirming stable diode behavior across full operating temperature range.

Is SIHB125N60EF-GE3 compatible with standard D2PAK footprints and reflow profiles?

Yes, SIHB125N60EF-GE3 uses the JEDEC-standard TO-263AB (D2PAK) outline with documented pad dimensions (document 73397), and is qualified for lead-free reflow per IPC/JEDEC J-STD-020. Peak solder temperature is rated at 260 °C for 10 s, matching industry-standard Pb-free assembly processes. The SIHB125N60EF-GE3 thermal pad is drain-connected and requires appropriate stencil design and solder paste volume to ensure mechanical integrity and thermal performance.

How does the effective output capacitance (Co(er)) of SIHB125N60EF-GE3 impact switching loss?

The SIHB125N60EF-GE3 features Co(er) = 54 pF - an energy-related effective capacitance derived from C_oss integral over 0–480 V - which directly determines turn-off switching energy loss (E_off ≈ ½ × Co(er) × V_DS²). At 480 V bus voltage, this yields ~6.2 μJ per switching cycle, significantly lower than conventional 600 V MOSFETs (typically >10 μJ). This reduction in SIHB125N60EF-GE3's Co(er) enables higher frequency operation without proportional efficiency penalty.

SIHB125N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1533 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB125N60EF-GE3 FAQ

1.How can I place an order for SIHB125N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB125N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB125N60EF-GE3 reliable?

The price and inventory of SIHB125N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB125N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB125N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB125N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB125N60EF-GE3?

SIHB125N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB125N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB125N60EF-GE3?

For technical support, including SIHB125N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB125N60EF-GE3 requirements.

6.How does Aetrix verify that SIHB125N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB125N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB125N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB125N60EF-GE3?

All SIHB125N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB125N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB125N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHB125N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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