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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB12N50E-GE3

Name: SIHB12N50E-GE3
Brand: Vishay Siliconix
SKU: SIHB12N50E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB12N50E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB12N50E-GE3.pdf

Description:: MOSFET N-CH 500V 10.5A D2PAK

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Product details

Overview

SIHB12N50E-GE3 from Vishay Siliconix is a 500 V, 10.5 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.330 Ω (typ) at V_GS = 10 V, Q_g = 25 nC (typ), and avalanche-rated E_AS = 103 mJ - designed for high-efficiency PFC and flyback converters in ATX power supplies and LED lighting.

For engineers reviewing the SIHB12N50E-GE3 datasheet, SIHB12N50E-GE3 pinout, SIHB12N50E-GE3 application, or SIHB12N50E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), robust dV/dt immunity (70 V/ns), and rated operation up to T_J = 150 °C in hard-switched topologies.

Technical Context

This device employs planar stripe silicon technology optimized for high-voltage switching with low gate charge and reduced output capacitance (C_oss = 52 pF typ). Its body diode exhibits t_rr = 244 ns and Q_rr = 2.5 μC under standardized conditions (I_F = 6 A, dI/dt = 100 A/μs), supporting moderate-frequency synchronous rectification and unclamped inductive switching.

The MOSFET operates with V_GS(th) = 2.0–4.0 V, enabling standard 10 V gate drive compatibility while maintaining tight threshold control across temperature. Its R_thJC = 1.1 °C/W enables high-power dissipation in thermally constrained layouts when mounted on copper-clad PCBs with thermal pads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for voltage transients in PFC stages
R_DS(on) max @ 25 °C	0.380 Ω - limits conduction loss to ≤ 4.3 W at 10.5 A continuous drain current
Q_g max	50 nC - determines gate driver power requirement and switching speed in 100–300 kHz SMPS
E_AS	103 mJ - enables reliable operation under unclamped inductive load faults without external snubbers
C_iss	886 pF - impacts gate drive loop stability and Miller-induced turn-on risk in high-dV/dt environments
t_r/t_f	16–32 ns / 12–24 ns - defines minimum achievable dead time and EMI profile in half-bridge configurations
T_J range	−55 to +150 °C - validated for industrial ambient operation with derated current above 100 °C case temperature

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring. Standard 3-pin configuration: Gate (G), Drain (D), Source (S), where Drain connects directly to the metal tab for low-inductance heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Accepts 10 V logic-level drive; requires ≥ 0.92 Ω gate resistance to damp ringing per typical test circuit
D	Drain (high-side switch node)	Connected to internal die backside and external thermal pad; carries full switched current and must be routed with low inductance
S	Source (return path)	Reference for gate drive and current sensing; forms common node with body diode cathode in freewheeling paths

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	13.25 Ω·nC (0.330 Ω × 40 nC avg) - improves efficiency trade-off between conduction and switching losses in 100–250 kHz converters
Avalanche energy rating	103 mJ single-pulse - eliminates need for external clamping in PFC boost inductor fault scenarios
High dV/dt immunity	70 V/ns - suppresses false turn-on during fast voltage transitions in bridge-leg configurations
Body diode Q_rr	2.5 μC - enables predictable reverse recovery behavior in flyback snubberless designs
Thermal resistance R_thJC	1.1 °C/W - allows >100 W power dissipation with 100 °C ΔT to heatsink in properly mounted D2PAK layout

Applications

ATX Power Supply PFC Stage	Two-Stage LED Driver
Use Scenario: Boost converter operating at 65–100 kHz with 380–400 V DC output from universal AC input. IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) PFC controller stage. Use Value: Low Q_g and C_iss reduce gate drive losses and improve light-load efficiency; avalanche rating handles line surge events.	Use Scenario: Secondary-side synchronous rectifier or primary-side switch in isolated LED driver with 24–48 V output. IC Role / Device Role / Timing Role: High-voltage switch in flyback topology with 50–150 kHz switching frequency. Use Value: 500 V rating accommodates reflected output voltage plus leakage spikes; low R_DS(on) minimizes conduction loss in compact form factor.
Industrial SMPS	Hard-Switched Forward Converter
Use Scenario: 200–500 W open-frame power supply for PLCs or motor drives with wide ambient temperature range. IC Role / Device Role / Timing Role: Primary-side switch in dual-transistor forward or half-bridge topology. Use Value: −55 to +150 °C junction rating ensures reliability in unventilated enclosures; R_thJC = 1.1 °C/W supports direct heatsink mounting.	Use Scenario: Two-switch forward converter operating at 100–200 kHz with 400 V input and 12–24 V output. IC Role / Device Role / Timing Role: High-side switch managing main energy transfer pulse. Use Value: Low C_oss (52 pF) reduces capacitive turn-off loss; dV/dt immunity prevents spurious turn-on during transformer reset.

ATX Power Supply PFC Stage

Two-Stage LED Driver

Use Scenario: Boost converter operating at 65–100 kHz with 380–400 V DC output from universal AC input.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) PFC controller stage.

Use Value: Low Q_g and C_iss reduce gate drive losses and improve light-load efficiency; avalanche rating handles line surge events.

Use Scenario: Secondary-side synchronous rectifier or primary-side switch in isolated LED driver with 24–48 V output.

IC Role / Device Role / Timing Role: High-voltage switch in flyback topology with 50–150 kHz switching frequency.

Use Value: 500 V rating accommodates reflected output voltage plus leakage spikes; low R_DS(on) minimizes conduction loss in compact form factor.

Industrial SMPS

Hard-Switched Forward Converter

Use Scenario: 200–500 W open-frame power supply for PLCs or motor drives with wide ambient temperature range.

IC Role / Device Role / Timing Role: Primary-side switch in dual-transistor forward or half-bridge topology.

Use Value: −55 to +150 °C junction rating ensures reliability in unventilated enclosures; R_thJC = 1.1 °C/W supports direct heatsink mounting.

Use Scenario: Two-switch forward converter operating at 100–200 kHz with 400 V input and 12–24 V output.

IC Role / Device Role / Timing Role: High-side switch managing main energy transfer pulse.

Use Value: Low C_oss (52 pF) reduces capacitive turn-off loss; dV/dt immunity prevents spurious turn-on during transformer reset.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	500 V, 12 A, R_DS(on) = 0.38 Ω, Q_g = 35 nC, TO-220FP package	Higher Q_g, through-hole mounting, lower thermal performance (R_thJC ≈ 2.5 °C/W)	Preferred where board space permits through-hole assembly and lower switching frequency (<80 kHz) is acceptable
IXFH12N50P	500 V, 12 A, R_DS(on) = 0.36 Ω, Q_g = 42 nC, TO-247 package	Larger footprint, higher gate charge, superior heatsinking via screw mount	Selected when >150 W continuous dissipation or forced-air cooling is required

Compared with STP12NK50ZFP and IXFH12N50P, SIHB12N50E-GE3 delivers best-in-class FOM for surface-mount, medium-power SMPS where PCB area, thermal pad integration, and 100+ kHz operation are critical.

Availability

SIHB12N50E-GE3 is available at Aetrix Electronics and suitable for ATX power supplies, LED lighting drivers, and industrial SMPS requiring stable component supply with lead (Pb)-free and halogen-free compliance.

Supply support for SIHB12N50E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The E Series Power MOSFET product line targets high-voltage, medium-current switching applications demanding low FOM, avalanche robustness, and thermal reliability - especially in computing, lighting, and industrial power conversion.

FAQ

What is the maximum continuous drain current rating for SIHB12N50E-GE3 at 100 °C case temperature?

The SIHB12N50E-GE3 has a continuous drain current rating of 6.6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature limit. The SIHB12N50E-GE3 maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does SIHB12N50E-GE3 support logic-level gate drive?

No, SIHB12N50E-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, but it is characterized and optimized for 10 V gate drive - R_DS(on) and Q_g values are specified at V_GS = 10 V. Using 5 V drive results in significantly higher R_DS(on) and unreliable switching; the SIHB12N50E-GE3 requires a dedicated 10 V gate driver stage.

What is the avalanche energy rating of SIHB12N50E-GE3 and how is it tested?

The SIHB12N50E-GE3 is rated for single-pulse unclamped inductive switching (UIS) with E_AS = 103 mJ, measured per JEDEC standard JESD24-1 using L = 28.2 mH, R_g = 25 Ω, I_AS = 2.7 A, and starting T_J = 25 °C. This rating confirms ruggedness against transient overcurrent events in PFC and flyback circuits without external protection. The SIHB12N50E-GE3 datasheet specifies this as a repetitive capability limited by junction temperature.

How does the body diode performance of SIHB12N50E-GE3 compare to standard FRDs?

The SIHB12N50E-GE3 body diode has V_SD = 1.2 V at I_S = 7.5 A and T_J = 25 °C, with t_rr = 244 ns and Q_rr = 2.5 μC under standardized conditions. While slower and higher-V_F than dedicated fast recovery diodes, its parameters are fully characterized and usable in self-commutated flyback snubberless designs. The SIHB12N50E-GE3 body diode is not intended for high-frequency synchronous rectification but supports reliable freewheeling in <200 kHz topologies.

Is SIHB12N50E-GE3 RoHS-compliant and what does the "-GE3" suffix indicate?

Yes, SIHB12N50E-GE3 is RoHS-compliant and halogen-free, as confirmed in the Ordering Information section. The "-GE3" suffix denotes Vishay's standard green, lead (Pb)-free, and halogen-free packaging - specifically, matte tin-plated leads and halogen-free molding compound meeting IEC 61249-2-21. This marking applies to the D2PAK package variant and ensures compatibility with modern reflow profiles and environmental requirements. The SIHB12N50E-GE3 meets all applicable material declarations per Vishay document 99912.

SIHB12N50E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 10.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 886 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB12N50E-GE3 FAQ

1.How can I place an order for SIHB12N50E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB12N50E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB12N50E-GE3 reliable?

The price and inventory of SIHB12N50E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB12N50E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB12N50E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB12N50E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB12N50E-GE3?

SIHB12N50E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB12N50E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB12N50E-GE3?

For technical support, including SIHB12N50E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB12N50E-GE3 requirements.

6.How does Aetrix verify that SIHB12N50E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB12N50E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB12N50E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB12N50E-GE3?

All SIHB12N50E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB12N50E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB12N50E-GE3 part is unused and in its original packaging.

Return procedure for SIHB12N50E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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