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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB12N60E-GE3

Name: SIHB12N60E-GE3
Brand: Vishay Siliconix
SKU: SIHB12N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB12N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB12N60E-GE3.pdf

Description:: MOSFET N-CH 600V 12A D2PAK

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Product details

Overview

SIHB12N60E-GE3 from Vishay Siliconix is a 600 V, 12 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.38 Ω @ V_GS = 10 V, Q_g = 58 nC, and avalanche-rated operation. It serves as a high-voltage switching element in primary-side SMPS, PFC stages, and solar inverter DC-link circuits.

For engineers reviewing the SIHB12N60E-GE3 datasheet, SIHB12N60E-GE3 pinout, SIHB12N60E-GE3 application, or SIHB12N60E-GE3 equivalent, key selection criteria include its 600 V V_DS, low gate charge for hard-switched topologies, UIS-rated ruggedness, and thermal resistance of 0.85 °C/W (junction-to-case).

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage power conversion. Its gate threshold voltage (2–4 V) ensures reliable turn-on with standard 10 V gate drivers, while the low C_iss (937 pF) and ultra-low Q_gd/Q_g ratio (13/58 nC) minimize Miller-induced switching instability in fast-switching converters.

The integrated body diode supports synchronous rectification and freewheeling in bridge configurations, with t_rr = 350 ns and Q_rr = 4 μC at 25 °C - enabling moderate-frequency operation without excessive diode loss. The device is rated for repetitive unclamped inductive switching (UIS) up to 117 mJ, confirming robustness under transient overcurrent conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC input rectified rails with 50 % safety margin for surge handling in telecom/server PSUs
R_DS(on) max	0.38 Ω @ V_GS = 10 V - enables ≤ 5.5 W conduction loss at 12 A continuous drain current
Q_g max	58 nC - reduces gate drive power requirement and allows use of low-power gate drivers in 100–300 kHz PFC designs
E_AS	117 mJ - provides validated energy-handling capability during inductive turn-off transients without failure
R_thJC	0.85 °C/W - permits 147 W power dissipation with ≤ 125 °C junction rise above 25 °C case temperature
I_D cont @ T_C = 100 °C	7.8 A - defines usable current derating for thermally constrained PCB layouts in enclosed power supplies
C_iss	937 pF - limits capacitive loading on gate driver, supporting stable 200+ kHz switching with minimal overshoot

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Drain tab is electrically connected to pin 2 (Drain) and thermally coupled to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control terminal	Receives 10 V logic-level drive; requires <100 nA leakage current compliance at ±30 V bias
D (Pin 2 / Tab)	High-voltage drain node	Connected to main power rail; must be isolated from other layers except dedicated thermal pad; handles 600 V potential
S (Pin 3)	Source reference and return path	Serves as local ground reference for gate driver; carries full load current (12 A) and reverse diode current (12 A)

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	22.0 Ω·nC - balances conduction and switching losses for optimal efficiency in 65–300 kHz SMPS
Avalanche energy rating (UIS)	117 mJ - eliminates need for external snubbers in inductive load switching applications like motor drives
Ultra-low Q_gd	13 nC - suppresses Miller plateau duration, improving dV/dt immunity and reducing risk of false turn-on
Body diode t_rr	350 ns - enables reliable freewheeling in half-bridge topologies without external Schottky parallel devices
Pb-free & Halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile - suitable for lead-free assembly

Applications

Server & Telecom PSU	Photovoltaic Inverters
Use Scenario: Primary-side switching in LLC resonant converters for 48 V/12 V intermediate bus supplies in data center servers. IC Role / Device Role / Timing Role: High-voltage switch in half-bridge configuration operating at 200–300 kHz with zero-voltage switching (ZVS) assist. Use Value: Low Q_g and C_iss reduce gate drive loss and improve ZVS soft-switching margin, increasing system efficiency by ≥0.5 % at full load.	Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Main switching device in three-phase inverter leg, handling 600 V DC bus with 12 A RMS output current. Use Value: 600 V V_DS rating and 117 mJ UIS withstand capability ensure reliability during grid fault transients and lightning surge events.
Industrial Motor Drives	LED Lighting Ballasts
Use Scenario: Inverter stage in 0.75–2.2 kW variable frequency drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Upper-leg switch in IGBT/MOSFET hybrid inverter topology, commutating inductive motor current at ≤20 kHz. Use Value: Avalanche-rated ruggedness and 7.8 A continuous current at 100 °C case enable robust operation under motor stall and overload conditions.	Use Scenario: High-frequency buck-boost stage in constant-current LED drivers for street lighting (100–200 W). IC Role / Device Role / Timing Role: Primary-side switch regulating 400 V DC bus to deliver 350 mA constant current to LED strings. Use Value: Low R_DS(on) minimizes conduction loss in high-duty-cycle operation, maintaining >92 % efficiency across 10–100 % dimming range.

Server & Telecom PSU

Photovoltaic Inverters

Use Scenario: Primary-side switching in LLC resonant converters for 48 V/12 V intermediate bus supplies in data center servers.

IC Role / Device Role / Timing Role: High-voltage switch in half-bridge configuration operating at 200–300 kHz with zero-voltage switching (ZVS) assist.

Use Value: Low Q_g and C_iss reduce gate drive loss and improve ZVS soft-switching margin, increasing system efficiency by ≥0.5 % at full load.

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Main switching device in three-phase inverter leg, handling 600 V DC bus with 12 A RMS output current.

Use Value: 600 V V_DS rating and 117 mJ UIS withstand capability ensure reliability during grid fault transients and lightning surge events.

Industrial Motor Drives

LED Lighting Ballasts

Use Scenario: Inverter stage in 0.75–2.2 kW variable frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Upper-leg switch in IGBT/MOSFET hybrid inverter topology, commutating inductive motor current at ≤20 kHz.

Use Value: Avalanche-rated ruggedness and 7.8 A continuous current at 100 °C case enable robust operation under motor stall and overload conditions.

Use Scenario: High-frequency buck-boost stage in constant-current LED drivers for street lighting (100–200 W).

IC Role / Device Role / Timing Role: Primary-side switch regulating 400 V DC bus to deliver 350 mA constant current to LED strings.

Use Value: Low R_DS(on) minimizes conduction loss in high-duty-cycle operation, maintaining >92 % efficiency across 10–100 % dimming range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK60ZFP	600 V, 12 A, R_DS(on) = 0.45 Ω, Q_g = 45 nC, TO-220FP package	Higher R_DS(on) increases conduction loss; lower Q_g improves switching speed but lacks UIS rating	Preferred where compact through-hole mounting is required and avalanche stress is absent
IXFH12N60P	600 V, 12 A, R_DS(on) = 0.39 Ω, Q_g = 65 nC, TO-247 package	Higher Q_g demands stronger gate drive; larger TO-247 offers better thermal performance but higher parasitic inductance	Selected when board space allows larger package and junction temperature exceeds 130 °C

Compared with STP12NK60ZFP and IXFH12N60P, SIHB12N60E-GE3 delivers superior FOM (22.0 vs. 20.3 and 25.4 Ω·nC), certified UIS ruggedness, and surface-mount compatibility - making it optimal for high-density, high-reliability power modules.

Availability

SIHB12N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHB12N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The E Series Power MOSFETs, including SIHB12N60E-GE3, are engineered for high-voltage, medium-current switching in telecom, industrial, and renewable energy systems where low FOM and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for SIHB12N60E-GE3 at 100 °C case temperature?

The SIHB12N60E-GE3 supports 7.8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to maintain this case temperature under full load.

Does SIHB12N60E-GE3 have an avalanche-rated specification?

Yes, SIHB12N60E-GE3 is explicitly rated for repetitive unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 117 mJ. This rating is verified per test condition b (V_DD = 50 V, L = 11.6 mH, R_g = 25 Ω, I_AS = 4.5 A) and confirms ruggedness against transient overcurrent events common in motor drives and SMPS startup.

What is the gate threshold voltage range for SIHB12N60E-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHB12N60E-GE3 is specified from 2 V to 4 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise coupling, especially in high-dV/dt environments typical of high-frequency power converters.

Can SIHB12N60E-GE3 be used in synchronous rectification topologies?

SIHB12N60E-GE3 is not optimized for synchronous rectification due to its body diode's 350 ns reverse recovery time and 1.2 V forward voltage at 6 A. While functional in low-frequency freewheeling roles, its Q_rr = 4 μC and t_rr make it less efficient than dedicated SR MOSFETs. For synchronous rectification, consider Vishay's SiR626DP or similar low-Q_rr devices instead of SIHB12N60E-GE3.

What is the thermal resistance from junction to case for SIHB12N60E-GE3?

The maximum junction-to-case (drain) thermal resistance (R_thJC) for SIHB12N60E-GE3 is 0.85 °C/W. This value is measured from the silicon die to the exposed drain tab and is critical for calculating junction temperature rise in surface-mount applications. Effective thermal design requires low-impedance soldering of the drain pad to ≥200 mm² of 2 oz copper with thermal vias.

SIHB12N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 937 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB12N60E-GE3 FAQ

1.How can I place an order for SIHB12N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB12N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB12N60E-GE3 reliable?

The price and inventory of SIHB12N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB12N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB12N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB12N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB12N60E-GE3?

SIHB12N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB12N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB12N60E-GE3?

For technical support, including SIHB12N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB12N60E-GE3 requirements.

6.How does Aetrix verify that SIHB12N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB12N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB12N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB12N60E-GE3?

All SIHB12N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB12N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB12N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHB12N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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