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Vishay Siliconix SIHB12N60ET5-GE3
- Part No.:
- SIHB12N60ET5-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHB12N60ET5-GE3.pdf
- Description:
- MOSFET N-CH 600V 12A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:5,286
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Product details
Overview
SIHB12N60ET5-GE3 from Vishay Siliconix is a 600 V, 12 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring RDS(on) = 0.38 Ω at VGS = 10 V, Qg = 58 nC, and EAS = 117 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.
For engineers reviewing the SIHB12N60ET5-GE3 datasheet, SIHB12N60ET5-GE3 pinout, SIHB12N60ET5-GE3 application, or SIHB12N60ET5-GE3 equivalent, this device delivers verified avalanche ruggedness, low gate charge for reduced switching loss, and thermal performance validated to 150 °C junction temperature with RthJC = 0.85 °C/W.
Technical Context
This MOSFET employs planar stripe silicon technology with optimized cell pitch and gate oxide design to achieve low RDS(on) × Qg figure-of-merit (FOM), enabling high-frequency operation up to 250 kHz in hard-switched topologies. Its body diode exhibits trr = 350 ns and Qrr = 4 μC at TJ = 25 °C, supporting ZVS-capable resonant designs.
The device is rated for repetitive unclamped inductive switching (UIS) with EAS = 117 mJ and supports dV/dt immunity of 70 V/ns at TJ = 125 °C - critical for reliable operation in high-noise industrial motor drives and solar inverters where voltage transients exceed 400 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V DC bus designs with ≥50 % voltage margin for transient clamping in PFC and DC-DC converters |
| RDS(on) max | 0.38 Ω at VGS = 10 V, TJ = 25 °C - enables <1.5 W conduction loss at 6 A continuous drain current |
| Qg max | 58 nC - reduces gate drive power requirement and allows use of lower-cost 1–2 W gate drivers |
| EAS | 117 mJ - ensures single-pulse avalanche survivability without derating in inductive load switching |
| RthJC | 0.85 °C/W - enables 147 W power dissipation with ≤125 °C case-to-ambient ΔT using standard heatsinking |
| ID cont. | 12 A at TC = 25 °C - supports 7.8 A continuous operation at 100 °C case temperature for compact thermal designs |
| VGS(th) | 2–4 V - compatible with standard 10 V gate drivers and provides noise-immune turn-on margin above 1.5 V |
Pinout & Package
D2PAK (TO-263) surface-mount package with isolated thermal pad (pin 3 = Drain), 3-terminal configuration, and JEDEC-compliant outline per document 73397. Package dimensions: 10.67 mm × 9.65 mm × 4.83 mm (max), with 1.78 mm lead length and 0.100" pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | High-impedance control terminal requiring ≤58 nC charge for full enhancement; sensitive to ESD (±30 V rating) |
| 2 (S) | Source | Power return path and reference node for gate drive; tied to PCB ground plane for low-inductance switching |
| 3 (D) | Drain | Main power output terminal connected to thermal pad; requires soldered copper area ≥16.1 mm² for RthJC compliance |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg FOM | 22.0 Ω·nC - improves efficiency in 100–250 kHz SMPS by reducing combined conduction + switching losses |
| Avalanche-rated (UIS) | 117 mJ single-pulse energy - eliminates need for external snubbers in flyback and LLC primary switches |
| Ultra-low Ciss | 937 pF at VDS = 100 V - minimizes Miller effect and enables stable gate drive with 9.1 Ω resistor |
| Body diode trr | 350 ns - supports synchronous rectification in secondary-side designs without excessive reverse recovery loss |
| Pb-free & Halogen-free | Complies with RoHS 2011/65/EU and Vishay's material categorization per doc. 99912 |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
|
Use Scenario: Primary-side switching in 3 kW 48 V output telecom rectifiers operating at 150 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage power switch handling 600 V DC input, conducting 12 A peak during on-time with <28 ns rise time. Use Value: Low Qg and RDS(on) reduce total losses by 1.2 W vs. legacy 650 V MOSFETs, improving system efficiency from 94.1 % to 94.7 % at full load. |
Use Scenario: Boost PFC stage in dual-output 1.5 kW server PSU with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Fast-switching boost switch operating in CCM mode at 70 kHz, sustaining 480 V VDS stress during line peaks. Use Value: 70 V/ns dV/dt rating prevents false turn-on during high dv/dt transitions; EAS margin avoids failure during line surge events. |
| Solar PV Inverter | Industrial Motor Drive |
|
Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverters with 600 V DC bus and transformerless topology. IC Role / Device Role / Timing Role: Half-bridge high-side switch subjected to repetitive 600 V blocking and 10 A RMS current with 100 kHz PWM. Use Value: 150 °C TJ rating and 0.85 °C/W RthJC allow operation at 85 °C ambient without forced air, reducing system cooling cost. |
Use Scenario: Inverter leg switch in 7.5 kW HVAC variable-frequency drive with IGBT-like bus voltage (550 V) and 12 A motor phase current. IC Role / Device Role / Timing Role: Hard-switched power transistor in 3-phase bridge, turning off under inductive load with 100 A/μs dI/dt. Use Value: Body diode Qrr = 4 μC limits commutation loss to <0.35 mJ per cycle, preventing thermal runaway during regenerative braking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NK60ZFP | RDS(on) = 0.58 Ω, Qg = 45 nC, TO-220FP package, no UIS rating | Limited to lower-power (<1 kW) SMPS due to higher conduction loss and lack of avalanche ruggedness | Select when cost sensitivity outweighs efficiency and reliability requirements in non-critical consumer PSUs |
| IXFH12N60P | RDS(on) = 0.42 Ω, Qg = 62 nC, TO-247 package, EAS = 100 mJ | Requires larger PCB footprint and higher gate drive power; suitable for higher-current (>15 A) designs | Prefer for industrial systems needing >150 W dissipation headroom and mechanical robustness over surface-mount constraints |
Compared with STP12NK60ZFP and IXFH12N60P, SIHB12N60ET5-GE3 offers the lowest RDS(on) × Qg FOM among 600 V 12 A MOSFETs in D2PAK, delivering superior thermal efficiency in space-constrained telecom and server power modules while maintaining full avalanche capability.
Availability
SIHB12N60ET5-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for SIHB12N60ET5-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics with manufacturing across Asia and the Americas.
The E Series Power MOSFETs, including SIHB12N60ET5-GE3, are engineered for high-efficiency, high-voltage switching in mission-critical power conversion systems where thermal stability and avalanche ruggedness are mandatory.
FAQ
What is the maximum continuous drain current rating for SIHB12N60ET5-GE3 at 100 °C case temperature?
The SIHB12N60ET5-GE3 supports 7.8 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 12 A rating at 25 °C and must be applied with proper heatsinking to maintain junction temperature ≤150 °C. The linear derating factor is 1.2 W/°C beyond 100 °C case temperature.
Does SIHB12N60ET5-GE3 have avalanche energy rating, and what is its value?
Yes, SIHB12N60ET5-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (EAS) of 117 mJ, measured under conditions of VDD = 50 V, L = 11.6 mH, Rg = 25 Ω, and IAS = 4.5 A. This rating is guaranteed across the full operating temperature range and enables robust operation in flyback, resonant, and hard-switched topologies without external protection.
What is the gate threshold voltage range for SIHB12N60ET5-GE3, and how does it affect drive compatibility?
The gate-source threshold voltage (VGS(th)) for SIHB12N60ET5-GE3 is specified from 2 V to 4 V at ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing sufficient noise margin against spurious triggering. It is not a logic-level device (which would require VGS(th) < 2 V), so 5 V microcontroller outputs cannot directly drive it without level-shifting.
What package type is used for SIHB12N60ET5-GE3, and what are its key mechanical features?
SIHB12N60ET5-GE3 uses the D2PAK (TO-263AB) surface-mount package with three terminals (G, S, D) and an exposed drain thermal pad. Key features include JEDEC-compliant outline, 0.100" lead pitch, 10.67 mm × 9.65 mm footprint, and a thermal resistance RthJC of 0.85 °C/W when mounted to ≥16.1 mm² copper area. The package is Pb-free and halogen-free per Vishay specification 99912.
How does the body diode performance of SIHB12N60ET5-GE3 compare to standard recovery diodes in PFC applications?
The body diode of SIHB12N60ET5-GE3 has trr = 350 ns and Qrr = 4 μC at TJ = 25 °C, which is significantly faster than standard FRD-based solutions in boost PFC. This enables reduced reverse recovery loss and lower EMI generation during zero-current switching transitions. However, it is not optimized for synchronous rectification duty - dedicated SiC Schottky diodes remain preferred for secondary-side ultra-low-loss operation.
SIHB12N60ET5-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 380mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 58 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 937 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 147W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHB12N60ET5-GE3 FAQ
1.How can I place an order for SIHB12N60ET5-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHB12N60ET5-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHB12N60ET5-GE3 reliable?
The price and inventory of SIHB12N60ET5-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB12N60ET5-GE3 is usually 5 days.
3.What payment methods are accepted for SIHB12N60ET5-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB12N60ET5-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHB12N60ET5-GE3?
SIHB12N60ET5-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHB12N60ET5-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHB12N60ET5-GE3?
For technical support, including SIHB12N60ET5-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB12N60ET5-GE3 requirements.
6.How does Aetrix verify that SIHB12N60ET5-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHB12N60ET5-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB12N60ET5-GE3 meets industry standards.
7.What is the process for return or replacement of SIHB12N60ET5-GE3?
All SIHB12N60ET5-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB12N60ET5-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHB12N60ET5-GE3 part is unused and in its original packaging.
Return procedure for SIHB12N60ET5-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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